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    • 1. 发明申请
    • Organic light emitting display device and method of fabricating the same
    • 有机发光显示装置及其制造方法
    • US20070052352A1
    • 2007-03-08
    • US11517277
    • 2006-09-08
    • Choong-Youl ImKyung-Jin YooWoo-Sik JunDo-hyun KwonTae-Wook Kang
    • Choong-Youl ImKyung-Jin YooWoo-Sik JunDo-hyun KwonTae-Wook Kang
    • H01J1/62H01J63/04
    • H01L51/5203H01L27/3246H01L27/3258
    • An organic light emitting display device (OLED) and a method of fabricating the same. The OLED includes: a substrate; a thin film transistor on the substrate and including a source electrode and a drain electrode; a first insulating layer on the substrate having the source and drain electrodes; a second insulating layer on the first insulating layer and including a trench; a via hole formed in the trench over the first and second insulating layers and exposing a portion of the source electrode or the drain electrode; a first electrode in the trench and connected to one of the source electrode and the drain electrode through the via hole; a pixel defining layer on the first electrode and having an opening exposing the first electrode; an organic layer in the opening and having at least an organic emission layer; and a second electrode on an entire surface of the substrate having the organic layer.
    • 一种有机发光显示装置(OLED)及其制造方法。 OLED包括:基底; 薄膜晶体管,其包括源电极和漏电极; 在所述衬底上的具有所述源极和漏极的第一绝缘层; 在所述第一绝缘层上的第二绝缘层,并且包括沟槽; 通孔,形成在所述沟槽中,在所述第一绝缘层和所述第二绝缘层上并暴露所述源电极或所述漏电极的一部分; 沟槽中的第一电极,并通过通孔与源电极和漏极之一连接; 第一电极上的像素限定层,并具有暴露第一电极的开口; 所述开口中的有机层至少具有有机发光层; 以及在具有有机层的基板的整个表面上的第二电极。
    • 2. 发明授权
    • Organic light emitting display device and method of fabricating the same
    • 有机发光显示装置及其制造方法
    • US08692453B2
    • 2014-04-08
    • US13295016
    • 2011-11-11
    • Choong-Youl ImKyung-Jin YooWoo-Sik JunTae-Wook KangDo-hyun Kwon
    • Choong-Youl ImKyung-Jin YooWoo-Sik JunTae-Wook KangDo-hyun Kwon
    • H01L51/56H01L51/50
    • H01L51/5203H01L27/3246H01L27/3258
    • An organic light emitting display device (OLED) and a method of fabricating the same. The OLED includes: a substrate; a thin film transistor on the substrate and including a source electrode and a drain electrode; a first insulating layer on the substrate; a second insulating layer on the first insulating layer and including a trench; a via hole formed in the trench over the first and second insulating layers and exposing a portion of the source electrode or the drain electrode; a first electrode in the trench and connected to one of the source electrode and the drain electrode through the via hole; a pixel defining layer on the first electrode and having an opening exposing the first electrode; an organic layer in the opening and having at least an organic emission layer; and a second electrode on an entire surface of the substrate having the organic layer.
    • 一种有机发光显示装置(OLED)及其制造方法。 OLED包括:基底; 薄膜晶体管,其包括源电极和漏电极; 基板上的第一绝缘层; 在所述第一绝缘层上的第二绝缘层,并且包括沟槽; 通孔,形成在所述沟槽中,在所述第一绝缘层和所述第二绝缘层上并暴露所述源电极或所述漏电极的一部分; 沟槽中的第一电极,并通过通孔与源电极和漏极之一连接; 第一电极上的像素限定层,并具有暴露第一电极的开口; 所述开口中的有机层至少具有有机发光层; 以及在具有有机层的基板的整个表面上的第二电极。
    • 5. 发明授权
    • Organic light emitting display device and method of fabricating the same
    • 有机发光显示装置及其制造方法
    • US08076837B2
    • 2011-12-13
    • US11517277
    • 2006-09-08
    • Choong-Youl ImKyung-Jin YooWoo-Sik JunDo-hyun KwonTae-Wook Kang
    • Choong-Youl ImKyung-Jin YooWoo-Sik JunDo-hyun KwonTae-Wook Kang
    • H01L51/00
    • H01L51/5203H01L27/3246H01L27/3258
    • An organic light emitting display device (OLED) and a method of fabricating the same. The OLED includes: a substrate; a thin film transistor on the substrate and including a source electrode and a drain electrode; a first insulating layer on the substrate having the source and drain electrodes; a second insulating layer on the first insulating layer and including a trench; a via hole formed in the trench over the first and second insulating layers and exposing a portion of the source electrode or the drain electrode; a first electrode in the trench and connected to one of the source electrode and the drain electrode through the via hole; a pixel defining layer on the first electrode and having an opening exposing the first electrode; an organic layer in the opening and having at least an organic emission layer; and a second electrode on an entire surface of the substrate having the organic layer.
    • 一种有机发光显示装置(OLED)及其制造方法。 OLED包括:基底; 薄膜晶体管,其包括源电极和漏电极; 在所述衬底上的具有所述源极和漏极的第一绝缘层; 在所述第一绝缘层上的第二绝缘层,并且包括沟槽; 通孔,形成在所述沟槽中,在所述第一绝缘层和所述第二绝缘层上并暴露所述源电极或所述漏电极的一部分; 沟槽中的第一电极,并通过通孔与源电极和漏极之一连接; 第一电极上的像素限定层,并具有暴露第一电极的开口; 所述开口中的有机层至少具有有机发光层; 以及在具有有机层的基板的整个表面上的第二电极。
    • 6. 发明申请
    • Thin film transistor panel, method of fabricating the same, and organic light emitting display device including the same
    • 薄膜晶体管面板及其制造方法以及包括该薄膜晶体管面板的有机发光显示装置
    • US20070238227A1
    • 2007-10-11
    • US11783097
    • 2007-04-05
    • Woo-Sik JunKyung-Jin YooChoong-Youl ImJong-Hyun ChoiDo-Hyun Kwon
    • Woo-Sik JunKyung-Jin YooChoong-Youl ImJong-Hyun ChoiDo-Hyun Kwon
    • H01L21/84H01L21/00
    • H01L27/1255
    • Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a capacitor region. A TFT is formed in the TFT region and a capacitor is formed in the capacitor region. The TFT includes an active layer that includes a source and a drain regions. A gate insulation layer is formed on the active layer, and a gate electrode is formed on the gate insulation layer over the active layer. A source and a drain electrodes are formed over the active layer, and connected to the source and drain regions, respectively. In the TFT region, an interlayer insulation layer is formed between the gate electrode and the source/drain electrodes. In the capacitor region, an interlayer insulation layer is formed between a capacitor lower electrode and a capacitor upper electrode to form a capacitor. The interlayer insulation layers of the TFT region and the capacitor region have different layer structures and have different dielectric constants. Therefore, the capacitor region can have higher capacitance while the TFT region can have lower capacitance to reduce parasitic capacitance.
    • 提供了一种薄膜晶体管(TFT)面板,其制造方法和包括该薄膜晶体管的有机发光显示装置(OLED)。 TFT面板具有TFT区域和电容器区域。 在TFT区域中形成TFT,在电容器区域形成电容器。 TFT包括有源层,其包括源区和漏区。 在有源层上形成栅极绝缘层,并且在有源层上的栅极绝缘层上形成栅电极。 源极和漏极形成在有源层上方,分别连接到源极和漏极区。 在TFT区域中,在栅极电极和源极/漏极之间形成层间绝缘层。 在电容器区域中,在电容器下电极和电容器上电极之间形成层间绝缘层,形成电容器。 TFT区域和电容器区域的层间绝缘层具有不同的层结构并具有不同的介电常数。 因此,电容器区域可以具有更高的电容,而TFT区域可以具有较低的电容以减小寄生电容。
    • 7. 发明授权
    • Thin film transistor panel, method of fabricating the same, and organic light emitting display device including the same
    • 薄膜晶体管面板及其制造方法以及包括该薄膜晶体管面板的有机发光显示装置
    • US08053779B2
    • 2011-11-08
    • US11783097
    • 2007-04-05
    • Woo-Sik JunKyung-Jin YooChoong-Youl ImJong-Hyun ChoiDo-Hyun Kwon
    • Woo-Sik JunKyung-Jin YooChoong-Youl ImJong-Hyun ChoiDo-Hyun Kwon
    • H01L29/12
    • H01L27/1255
    • Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a capacitor region. A TFT is formed in the TFT region and a capacitor is formed in the capacitor region. The TFT includes an active layer that includes a source and a drain regions. A gate insulation layer is formed on the active layer, and a gate electrode is formed on the gate insulation layer over the active layer. A source and a drain electrodes are formed over the active layer, and connected to the source and drain regions, respectively. In the TFT region, an interlayer insulation layer is formed between the gate electrode and the source/drain electrodes. In the capacitor region, an interlayer insulation layer is formed between a capacitor lower electrode and a capacitor upper electrode to form a capacitor. The interlayer insulation layers of the TFT region and the capacitor region have different layer structures and have different dielectric constants. Therefore, the capacitor region can have higher capacitance while the TFT region can have lower capacitance to reduce parasitic capacitance.
    • 提供了一种薄膜晶体管(TFT)面板,其制造方法和包括该薄膜晶体管的有机发光显示装置(OLED)。 TFT面板具有TFT区域和电容器区域。 在TFT区域中形成TFT,在电容器区域形成电容器。 TFT包括有源层,其包括源区和漏区。 在有源层上形成栅极绝缘层,并且在有源层上的栅极绝缘层上形成栅电极。 源极和漏极形成在有源层上方,分别连接到源极和漏极区。 在TFT区域中,在栅极电极和源极/漏极之间形成层间绝缘层。 在电容器区域中,在电容器下电极和电容器上电极之间形成层间绝缘层,形成电容器。 TFT区域和电容器区域的层间绝缘层具有不同的层结构并具有不同的介电常数。 因此,电容器区域可以具有更高的电容,而TFT区域可以具有较低的电容以减小寄生电容。
    • 10. 发明授权
    • Touch screen panel and fabricating method thereof
    • 触摸屏面板及其制造方法
    • US08804055B2
    • 2014-08-12
    • US12952671
    • 2010-11-23
    • Woo-Sik Jun
    • Woo-Sik Jun
    • G02F1/1335G02F1/1343
    • G06F3/044G06F3/0412
    • A fabricating method of a touch screen panel, a transparent electrode layer and an insulating layer which are sequentially formed on a same surface of a transparent substrate. The transparent electrode layer and the insulating layer are co-patterned using a halftone mask to form a plurality of first sensing patterns connected along a first direction, a plurality of second sensing patterns having separated patterns between the first sensing patterns, and the insulating layer positioned on the first and second sensing patterns to expose regions of the second sensing patterns. A conductive layer is formed on the transparent substrate on which the first and second sensing patterns and the insulating layer are formed. The conductive layer is patterned to form second connection patterns allowing the second sensing patterns to be connected along a second direction through the exposed regions of the second sensing patterns.
    • 触摸屏面板,透明电极层和绝缘层的制造方法依次形成在透明基板的同一表面上。 透明电极层和绝缘层使用半色调掩模进行共图案化,以形成沿着第一方向连接的多个第一感测图案,在第一感测图案之间具有分离图案的多个第二感测图案,并且将绝缘层定位 在第一和第二感测图案上暴露第二感测图案的区域。 在其上形成有第一和第二感测图案和绝缘层的透明基板上形成导电层。 导电层被图案化以形成第二连接图案,允许第二感测图案沿着第二方向连接通过第二感测图案的暴露区域。