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1. 发明授权

US09511993B2 Semiconductor physical quantity detecting sensor 有权
标题翻译：半导体物理量检测传感器
公开(公告)号：US09511993B2
公开(公告)日：2016-12-06
申请号：US13983775
申请日：2012-01-18
申请人： Kiyoko Yamanaka , Heewon Jeong , Chisaki Takubo
发明人： Kiyoko Yamanaka , Heewon Jeong , Chisaki Takubo
IPC分类号： B81B7/02 , G01C19/5747 , G01C19/5769 , G01P15/125 , G01P15/18 , G01P15/08
CPC分类号： B81B7/02 , G01C19/5747 , G01C19/5769 , G01P15/125 , G01P15/18 , G01P2015/0822
摘要： A semiconductor physical quantity detection sensor includes (1) a first electrostatic capacitance formed by the movable electrode, and a first fixed electrode formed in a first conductive layer shared with the movable electrode, (2) a second electrostatic capacitance that is formed by the movable electrode, and a second fixed electrode formed in a second conductive layer different in a height from a substrate surface from the movable electrode, and (3) an arithmetic circuit that calculates the physical quantity on the basis of a change in the first and second electrostatic capacitances generated when the physical quantity is applied. In this configuration, an electric signal from the first electrostatic capacitance, and an electric signal from the second electrostatic capacitance are input to the arithmetic circuit.
摘要翻译：半导体物理量检测传感器包括（1）由可动电极形成的第一静电电容和形成在与可动电极共用的第一导电层中的第一固定电极，（2）由可动电极形成的第二静电电容电极和形成在与可动电极的基板表面不同高度的第二导电层中的第二固定电极，以及（3）基于第一和第二静电的变化来计算物理量的运算电路当施加物理量时产生的电容。在该结构中，来自第一静电电容的电信号和来自第二静电电容的电信号被输入到运算电路。

2. 发明授权

US08643927B2 MEMS device and method of manufacturing MEMS device 有权
标题翻译： MEMS器件及制造MEMS器件的方法
公开(公告)号：US08643927B2
公开(公告)日：2014-02-04
申请号：US13178480
申请日：2011-07-07
申请人： Chisaki Takubo , Heewon Jeong
发明人： Chisaki Takubo , Heewon Jeong
IPC分类号： G02B26/08
CPC分类号： G01P15/125 , B81B3/001 , G01C19/5747 , G01P15/0802 , G01P2015/0814 , G01P2015/0837 , G01P2015/0874 , G01P2015/088 , G02B26/0841 , G02B26/105 , H01G5/18 , H01L21/76898 , H01L21/84 , H01L23/481 , H01L27/13 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A protrusion formation hole is provided so as to pierce a support substrate. A polysilicon film as an electrical conducting material is embedded in the protrusion formation hole through an oxide silicon film. The polysilicon film partially bulges out of the protrusion formation hole toward a movable section to form a protruding section. In other words, the polysilicon film bulges out of the protrusion formation hole toward the movable section to form the protruding section. Thereby, a movable section included in MEMS can be prevented from sticking to other members.
摘要翻译：提供突起形成孔以刺穿支撑基板。作为导电材料的多晶硅膜通过氧化物硅膜被包埋在突起形成孔中。多晶硅膜从突出形成孔朝向可移动部分部分地凸出以形成突出部分。换句话说，多晶硅膜从突起形成孔朝向可动部凸出，形成突出部。由此，能够防止包含在MEMS中的可动部附着在其他部件上。

3. 发明申请

US20130346015A1 Semiconductor Physical Quantity Detecting Sensor 有权
标题翻译：半导体物理量检测传感器
公开(公告)号：US20130346015A1
公开(公告)日：2013-12-26
申请号：US13983775
申请日：2012-01-18
申请人： Kiyoko Yamanaka , Heewon Jeong , Chisaki Takubo
发明人： Kiyoko Yamanaka , Heewon Jeong , Chisaki Takubo
IPC分类号： B81B7/02
CPC分类号： B81B7/02 , G01C19/5747 , G01C19/5769 , G01P15/125 , G01P15/18 , G01P2015/0822
摘要： A semiconductor physical quantity detection sensor includes (1) a first electrostatic capacitance formed by the movable electrode, and a first fixed electrode formed in a first conductive layer shared with the movable electrode, (2) a second electrostatic capacitance that is formed by the movable electrode, and a second fixed electrode formed in a second conductive layer different in a height from a substrate surface from the movable electrode, and (3) an arithmetic circuit that calculates the physical quantity on the basis of a change in the first and second electrostatic capacitances generated when the physical quantity is applied. In this configuration, an electric signal from the first electrostatic capacitance, and an electric signal from the second electrostatic capacitance are input to the arithmetic circuit.
摘要翻译：半导体物理量检测传感器包括（1）由可动电极形成的第一静电电容和形成在与可动电极共用的第一导电层中的第一固定电极，（2）由可动电极形成的第二静电电容电极和形成在与可动电极的基板表面不同高度的第二导电层中的第二固定电极，以及（3）基于第一和第二静电的变化来计算物理量的运算电路当施加物理量时产生的电容。在该结构中，来自第一静电电容的电信号和来自第二静电电容的电信号被输入到运算电路。

4. 发明申请

US20120038963A1 MEMS DEVICE AND METHOD OF MANUFACTURING MEMS DEVICE 有权
标题翻译： MEMS器件及制造MEMS器件的方法
公开(公告)号：US20120038963A1
公开(公告)日：2012-02-16
申请号：US13178480
申请日：2011-07-07
申请人： Chisaki TAKUBO , Heewon Jeong
发明人： Chisaki TAKUBO , Heewon Jeong
IPC分类号： G02B26/10 , H01L21/02 , H01L29/84 , G01P15/125
CPC分类号： G01P15/125 , B81B3/001 , G01C19/5747 , G01P15/0802 , G01P2015/0814 , G01P2015/0837 , G01P2015/0874 , G01P2015/088 , G02B26/0841 , G02B26/105 , H01G5/18 , H01L21/76898 , H01L21/84 , H01L23/481 , H01L27/13 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A protrusion formation hole is provided so as to pierce a support substrate. A polysilicon film as an electrical conducting material is embedded in the protrusion formation hole through an oxide silicon film. The polysilicon film partially bulges out of the protrusion formation hole toward a movable section to form a protruding section. In other words, the polysilicon film bulges out of the protrusion formation hole toward the movable section to form the protruding section. Thereby, a movable section included in MEMS can be prevented from sticking to other members.
摘要翻译：提供突起形成孔以刺穿支撑基板。作为导电材料的多晶硅膜通过氧化物硅膜被包埋在突起形成孔中。多晶硅膜从突出形成孔朝向可移动部分部分地凸出以形成突出部分。换句话说，多晶硅膜从突起形成孔朝向可动部凸出，形成突出部。由此，能够防止包含在MEMS中的可动部附着在其他部件上。

5. 发明授权

US09279827B2 Sensor module and sensor system 有权
标题翻译：传感器模块和传感器系统
公开(公告)号：US09279827B2
公开(公告)日：2016-03-08
申请号：US13976372
申请日：2011-11-24
申请人： Daisuke Maeda , Heewon Jeong , Masahide Hayashi
发明人： Daisuke Maeda , Heewon Jeong , Masahide Hayashi
IPC分类号： G01P21/00 , G01C19/5776 , G01C21/16
CPC分类号： G01P21/00 , G01C19/5776 , G01C21/16
摘要： Reliability and accuracy of a sensor are secured while adjustment cost of a sensor module is suppressed. A signal component analysis part 10 receives a signal output from a signal processing part 7 before passing through a low-pass filter 8, analyzes whether or not application of a fragile frequency with respect to a physical quantity is equal to or more than a threshold level, if the application of the fragile frequency is equal to or more than the threshold level, outputs output stop signals to output signal control parts 9, 16. The output signal control parts 9, 16 receive control signals output from the signal component analysis part 10, and outputs an acceleration signal and a physical quantity signal from which noise has been removed by the low-pass filters 8, 15 through the signal processing parts 7, 14.
摘要翻译：确保传感器模块的调整成本得到抑制，从而确保传感器的可靠性和精度。信号分量分析部分10在通过低通滤波器8之前接收从信号处理部分7输出的信号，分析相对于物理量的脆弱频率的施加是否等于或大于阈值水平如果脆弱频率的应用等于或大于阈值电平，则将输出停止信号输出到输出信号控制部9,16。输出信号控制部9,16接收从信号分量分析部10输出的控制信号并且通过信号处理部件7,14输出通过低通滤波器8,15除去噪声的加速度信号和物理量信号。

6. 发明授权

US09151776B2 Combined sensor 有权
标题翻译：组合传感器
公开(公告)号：US09151776B2
公开(公告)日：2015-10-06
申请号：US13983828
申请日：2012-01-10
申请人： Heewon Jeong , Masahide Hayashi
发明人： Heewon Jeong , Masahide Hayashi
IPC分类号： G01C19/5719 , G01P15/125 , G01P15/08 , G01C19/5733 , G01C19/5726 , H01L29/84 , G01C19/5769
CPC分类号： G01P15/125 , G01C19/5719 , G01C19/5726 , G01C19/5733 , G01C19/5769 , G01P15/0802 , G01P2015/0814 , H01L29/84
摘要： An object of the invention is to provide a combined sensor capable of suppressing the influence of electrostatic force generated by a potential difference and preventing a reduction in the S/N ratio or a variation in the sensitivity of a sensor.A combined sensor according to the invention includes first and second movable portions and first and second dummy portions provided around the first and second movable portions, which are formed in a layer of a laminated substrate. The first dummy portion and the second dummy portion are electrically separated from each other. A first potential is applied to the first movable portion and the first dummy portion and a second potential is applied to the second movable portion and the second dummy portion (see FIG. 2).
摘要翻译：本发明的目的是提供一种组合传感器，其能够抑制由电位差产生的静电力的影响，并且防止S / N比的降低或传感器的灵敏度的变化。根据本发明的组合传感器包括第一和第二可移动部分以及设置在第一和第二可移动部分周围的第一和第二虚拟部分，其形成在层压基板的层中。第一虚拟部分和第二虚拟部分彼此电分离。第一电位施加到第一可动部和第一虚拟部，第二电位施加到第二可动部和第二虚拟部（参照图2）。

7. 发明授权

US08943890B2 Inertial sensor 有权
标题翻译：惯性传感器
公开(公告)号：US08943890B2
公开(公告)日：2015-02-03
申请号：US13563557
申请日：2012-07-31
申请人： Heewon Jeong , Hiroshi Fukuda
发明人： Heewon Jeong , Hiroshi Fukuda
IPC分类号： G01P15/097 , G01C19/5719 , G01P15/125
CPC分类号： G01P15/097 , G01C19/5719 , G01P15/125
摘要： One inertial sensor detects an acceleration in a driving direction as well as an angular rate about one axis and an acceleration in a detecting direction at the same time. A driving-direction acceleration detecting unit is provided to members vibrating in mass members on the left and right via an elastic body. In this manner, when an acceleration is applied in the driving direction, the mass members on the left and right normally vibrated with a same amplitude and in opposite phases have displacement amounts in a same phase, and the driving-direction acceleration detecting unit detects the displacement amounts in the same phase as a capacitance change, thereby detecting the acceleration in the driving direction.
摘要翻译：一个惯性传感器同时检测驱动方向上的加速度以及围绕一个轴的角速度和检测方向上的加速度。驱动方向加速度检测单元经由弹性体向左右的质量构件振动的构件设置。以这种方式，当在驱动方向上施加加速度时，左右的质量构件以相同的振幅和相反的相位正常地振动，具有相同相位的位移量，并且驱动方向加速度检测单元检测位移量与电容变化相同，从而检测驱动方向上的加速度。

8. 发明申请

US20110132089A1 Inertial Sensor 审中-公开
标题翻译：惯性传感器
公开(公告)号：US20110132089A1
公开(公告)日：2011-06-09
申请号：US13058571
申请日：2009-07-28
申请人： Heewon Jeong , Kiyoko Yamanaka
发明人： Heewon Jeong , Kiyoko Yamanaka
IPC分类号： G01P15/125 , G01P15/00
CPC分类号： G01P15/125 , G01P1/023 , G01P2015/0814
摘要： In order to provide an inertial sensor such as an acceleration sensor which can be downsized and in which a high SNR can be obtained as having a plurality of measurement ranges, an inertial sensor for detecting an inertial force of acceleration based on an electrostatic capacitance change of a detecting unit includes a plurality of detecting units D1 to D4 each having a different sensitivity defined by a ratio between an applied inertial force and physical quantity generated from each of the detecting units to provide the plurality of measurement ranges. Alternatively, when the inertial sensor includes N (a natural number of 2 or larger) pieces of movable units 6a to 6c, (N+1) or more types of measurement ranges are provided.
摘要翻译：为了提供惯性传感器，例如加速度传感器，其可以被小型化并且可以获得具有多个测量范围的高SNR，用于基于静电电容变化来检测加速度惯性力的惯性传感器检测单元包括多个检测单元D1至D4，每个检测单元具有由施加的惯性力与从每个检测单元产生的物理量之间的比率定义的不同灵敏度，以提供多个测量范围。或者，当惯性传感器包括N（自然数2以上）的可动单元6a〜6c，（N + 1）以上的测量范围。

9. 发明授权

US09229025B2 Inertial sensor 有权
标题翻译：惯性传感器
公开(公告)号：US09229025B2
公开(公告)日：2016-01-05
申请号：US13811950
申请日：2011-08-08
申请人： Kiyoko Yamanaka , Heewon Jeong , Toshiaki Nakamura , Masahide Hayashi
发明人： Kiyoko Yamanaka , Heewon Jeong , Toshiaki Nakamura , Masahide Hayashi
IPC分类号： G01P5/08 , G01P3/44 , G01P15/125 , G01C19/5747 , G01P21/00 , G01P15/08
CPC分类号： G01P15/125 , G01C19/5747 , G01P15/0802 , G01P21/00 , G01P2015/0814
摘要： In order to provide an inertial sensor capable of suppressing a wrong diagnosis even in an adverse environment such that sudden noise occurs, an inertial sensor is provided with a movable part (105), a first detection unit (C1, C2) for detecting the amount of displacement of the movable part (105), a forced vibration means (503, C3, C4) for forcedly vibrating the movable part (105) by applying a diagnosis signal, a physical quantity calculation unit (502) for calculating the physical quantity from a detection signal from the first detection unit (C1, C2), and an abnormality determination unit (504) for determining the presence or absence of the abnormality for the physical quantity using the diagnosis signal obtained via the first detection unit (C1, C2), and is used within a vehicle, the inertial sensor further comprising a second sensor (510) mounted in the same vehicle and connected to the abnormality determination unit (504).
摘要翻译：为了提供一种惯性传感器，即使在出现突发噪声的不利环境下也能够抑制错误的诊断，惯性传感器设置有可动部（105），第一检测单元（C1，C2）通过施加诊断信号对可动部（105）进行强制振动的强制振动装置（503，C3，C4）;物理量计算部（502），用于计算物理量来自第一检测单元（C1，C2）的检测信号和用于通过经由第一检测单元（C1，C2）获得的诊断信号来确定物理量的异常的存在或不存在的异常确定单元（504），并且在车辆内使用，惯性传感器还包括安装在同一车辆中并连接到异常判定单元（504）的第二传感器（510）。

10. 发明申请

US20140260612A1 Composite Sensor and Method for Manufacturing The Same 审中-公开
标题翻译：复合传感器及其制造方法
公开(公告)号：US20140260612A1
公开(公告)日：2014-09-18
申请号：US14353635
申请日：2011-11-28
申请人： Takanori Aono , Kengo Suzuki , Masahide Hayashi , Heewon Jeong
发明人： Takanori Aono , Kengo Suzuki , Masahide Hayashi , Heewon Jeong
IPC分类号： G01C19/5705
CPC分类号： G01C19/5705 , B81B2201/0235 , B81B2201/0242 , B81C1/00285 , G01C19/5783 , G01P15/0802 , G01P2015/088
摘要： The disclosure provides a composite sensor with high reliability and a method for manufacturing the same. A moving body of an acceleration sensor and an oscillator of an angular velocity sensor are provided on the same sensor wafer, while being partitioned by a wall, and a cap wafer is formed to have a gap that corresponds to each of the sensors. A through hole and a bump are formed in a sensor sealing portion, the acceleration sensor is sealed in an air atmosphere in a first sealing process, and in a second sealing process, the angular velocity sensor is sealed by bringing the sensors and the cap into contact with each other and joining the sensors and the cap in a vacuum atmosphere. Thereafter, a composite sensor wafer is cut, a circuit board and a wiring board are mounted thereon, and a composite sensor is formed.
摘要翻译：本公开提供了具有高可靠性的复合传感器及其制造方法。加速度传感器的移动体和角速度传感器的振荡器设置在相同的传感器晶片上，同时由壁分隔，并且盖晶片形成为具有与每个传感器对应的间隙。在传感器密封部中形成有贯通孔和凸块，在第一密封工序中将加速度传感器密封在空气气氛中，在第二密封工序中，通过将传感器和盖体彼此接触并在真空环境中连接传感器和盖子。此后，将复合传感器晶片切割，电路板和布线板安装在其上，并且形成复合传感器。

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