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1. 发明授权

US06638871B2 Method for forming openings in low dielectric constant material layer 有权
标题翻译：低介电常数材料层开口形成方法
公开(公告)号：US06638871B2
公开(公告)日：2003-10-28
申请号：US10044322
申请日：2002-01-10
申请人： Chin-Jung Wang , Tong-Yu Chen
发明人： Chin-Jung Wang , Tong-Yu Chen
IPC分类号： H01L21311
CPC分类号： H01L21/76811 , H01L21/0276 , H01L21/31144 , H01L21/76813
摘要： The invention is directed towards a method for forming openings in low-k dielectric layers. A cap layer, a low-k dielectric layer, a metal hard mask layer and a hard mask layer are formed in sequence on a provided substrate with metal wires. After patterning the metal hard mask layer and the hard mask layer to form a first opening, a fluid filling material layer is formed on the hard mask layer and fills the first opening. Using a patterned photoresist layer as a mask to define the filling material layer and the low-k dielectric layer, a second opening is obtained. After removing the photoresist layer along with the filling material layer, a damascene opening is formed by using the metal hard mask and the hard mask layers as a mask and the cap layer as an etching stop layer.
摘要翻译：本发明涉及一种用于在低k电介质层中形成开口的方法。在金属线的所提供的基板上依次形成盖层，低k电介质层，金属硬掩模层和硬掩模层。在图案化金属硬掩模层和硬掩模层以形成第一开口之后，在硬掩模层上形成流体填充材料层并填充第一开口。使用图案化的光致抗蚀剂层作为掩模来限定填充材料层和低k电介质层，获得第二个开口。在与填充材料层一起去除光致抗蚀剂层之后，通过使用金属硬掩模和硬掩模层作为掩模和盖层作为蚀刻停止层来形成镶嵌开口。

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