专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100288348A1 SOLAR CELL DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：太阳能电池装置及其制造方法
公开(公告)号：US20100288348A1
公开(公告)日：2010-11-18
申请号：US12545769
申请日：2009-08-21
申请人： Chin-Ching Lin , Mei-Ching Chiang , Hsiang-Chuan Chen , Chao-Jen Ho , Kuo-Chuang Chiu
发明人： Chin-Ching Lin , Mei-Ching Chiang , Hsiang-Chuan Chen , Chao-Jen Ho , Kuo-Chuang Chiu
IPC分类号： H01L31/0376 , H01L31/18 , H01L31/105
CPC分类号： H01L31/1884 , H01L31/022466 , Y02E10/50
摘要： A solar cell device is provided, including a transparent substrate, a composite transparent conductive layer disposed over the transparent substrate, a photovoltaic element formed over the composite transparent conductive layer, and an electrode layer disposed over the photovoltaic element. In one embodiment, the composite transparent conductive layer includes a first transparent conductive layer and a second transparent conductive layer sequentially stacked over the transparent substrate, and the first transparent conductive layer is made of lithium and fluorine-codoped tin oxide and the second transparent conductive layer is made of a material selected from a group consisting of zinc oxide and titanium dioxide.
摘要翻译：提供一种太阳能电池装置，包括透明基板，设置在透明基板上的复合透明导电层，形成在复合透明导电层上的光电元件以及设置在光电元件上的电极层。在一个实施例中，复合透明导电层包括顺序层叠在透明基板上的第一透明导电层和第二透明导电层，第一透明导电层由锂和氟共掺杂的氧化锡制成，第二透明导电层由选自氧化锌和二氧化钛的材料制成。

2. 发明申请

US20060062675A1 Ceramic blades and fabrication methods thereof 有权
标题翻译：陶瓷刀片及其制造方法
公开(公告)号：US20060062675A1
公开(公告)日：2006-03-23
申请号：US11149316
申请日：2005-06-10
申请人： Kuo-Chuang Chiu , Ren-Der Jean , Chuan-Lung Lu
发明人： Kuo-Chuang Chiu , Ren-Der Jean , Chuan-Lung Lu
IPC分类号： F03B3/12
CPC分类号： B26B9/00 , B26B21/58 , B26B21/60
摘要： Ceramic blades and fabrication methods thereof. A ceramic blade comprises a ceramic body having two sides and an edge. A coating layer is applied on the two sides and the edge, wherein the ceramic body is formed using a scraper to create substantially flat surface and to prevent residual stress damage.
摘要翻译：陶瓷刀片及其制造方法。陶瓷刀片包括具有两侧和边缘的陶瓷体。在两侧和边缘上施加涂层，其中使用刮刀形成陶瓷体以形成基本平坦的表面并防止残余应力损伤。

3. 发明申请

US20050247561A1 Ceramic gas sensor 审中-公开
标题翻译：陶瓷气体传感器
公开(公告)号：US20050247561A1
公开(公告)日：2005-11-10
申请号：US10928208
申请日：2004-08-30
申请人： Kuo-Chuang Chiu , Ren-Der Jean
发明人： Kuo-Chuang Chiu , Ren-Der Jean
IPC分类号： G01N27/26 , G01N27/407
CPC分类号： G01N27/4074
摘要： A ceramic gad sensor comprises an upper electrode, a reaction layer, a lower electrode, and a ceramic cavity layer. The reaction layer is a ceramic substrate with one end provided with a reaction region that has a plurality of duct holes penetrating through the upper and lower surfaces of the substrate and a reaction film covering the upper surface of the reaction region. The reaction film is made of a detecting material and connected to the duct holes. There is also the detecting material provided inside the duct holes. The upper electrode is attached on the reaction film. The lower electrode is attached on the lower surface of the substrate and connected to the duct holes. The ceramic cavity layer is provided on the lower surface of the reaction layer with the lower electrode in between.
摘要翻译：陶瓷小型传感器包括上电极，反应层，下电极和陶瓷腔层。反应层是陶瓷基体，其一端设有反应区域，该反应区域具有贯穿基材的上表面和下表面的多个导管孔，以及覆盖反应区域的上表面的反应膜。反应膜由检测材料制成并连接到管道孔。还有在导管孔内设置检测材料。上电极附着在反应膜上。下部电极安装在基板的下表面上并与管道孔连接。陶瓷腔层设置在反应层的下表面上，下电极介于其间。

4. 发明授权

US08007694B2 P-type metal oxide semiconductor material and fabrication method thereof 有权
标题翻译： P型金属氧化物半导体材料及其制造方法
公开(公告)号：US08007694B2
公开(公告)日：2011-08-30
申请号：US12431408
申请日：2009-04-28
申请人： Kuo-Chuang Chiu , Yi-Wen Kao , Shan-Haw Chiou
发明人： Kuo-Chuang Chiu , Yi-Wen Kao , Shan-Haw Chiou
IPC分类号： H01B1/08 , H01B1/12
CPC分类号： H01B1/08 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/02628 , H01L29/24
摘要： A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein to the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LixZnx-1 O.
摘要翻译：公开了一种p型金属氧化物半导体材料的制造方法，其中包括提供要在溶液中混合的锂盐和锌盐，其中向该溶液中加入螯合剂以形成包含锂和锌的金属络合物。进行金属络合物形成p型金属氧化物半导体材料粉末的加热方法，其具有式LixZnx-1 O.

5. 发明授权

US07730808B2 Ceramic blades and fabrication methods thereof 有权
标题翻译：陶瓷刀片及其制造方法
公开(公告)号：US07730808B2
公开(公告)日：2010-06-08
申请号：US11149316
申请日：2005-06-10
申请人： Kuo-Chuang Chiu , Ren-Der Jean , Chuan-Lung Lu
发明人： Kuo-Chuang Chiu , Ren-Der Jean , Chuan-Lung Lu
IPC分类号： B21K11/00
CPC分类号： B26B9/00 , B26B21/58 , B26B21/60
摘要： Ceramic blades and fabrication methods thereof. A ceramic blade comprises a ceramic body having two sides and an edge. A coating layer is applied on the two sides and the edge, wherein the ceramic body is formed using a scraper to create substantially flat surface and to prevent residual stress damage.
摘要翻译：陶瓷刀片及其制造方法。陶瓷刀片包括具有两侧和边缘的陶瓷体。在两侧和边缘上施加涂层，其中使用刮刀形成陶瓷体以形成基本平坦的表面并防止残余应力损伤。

6. 发明申请

US20120107631A1 BONDING MATERIAL, METHOD, AND STRUCTURE 有权
标题翻译：粘结材料，方法和结构
公开(公告)号：US20120107631A1
公开(公告)日：2012-05-03
申请号：US13283490
申请日：2011-10-27
申请人： Kuo-Chuang Chiu
发明人： Kuo-Chuang Chiu
IPC分类号： B32B15/04 , B32B15/20 , C08L1/00 , B32B37/06 , B32B37/14 , C08K3/22 , B32B18/00 , B32B37/12
CPC分类号： C04B37/028 , B82Y30/00 , C04B35/63416 , C04B35/6342 , C04B35/6365 , C04B37/025 , C04B2235/3281 , C04B2235/5445 , C04B2235/5454 , C04B2235/9607 , C04B2237/06 , C04B2237/064 , C04B2237/068 , C04B2237/08 , C04B2237/343 , C04B2237/348 , C04B2237/366 , C04B2237/407 , C04B2237/592 , C04B2237/60 , C04B2237/708 , C04B2237/72 , H01L33/641 , H01L2924/0002 , Y10T428/12056 , H01L2924/00
摘要： Disclosed is a bonding structure, including a heat dissipation substrate, a eutectic layer on the heat dissipation substrate, and a copper layer on the eutectic layer. The thermal dissipation substrate includes aluminum oxide, aluminum nitride, or zirconium oxide. The eutectic layer includes aluminum oxide, aluminum nitride, or zirconium oxide doped with zinc, tin, indium, or combinations thereof.
摘要翻译：公开了一种接合结构，其包括散热基板，散热基板上的共晶层和共晶层上的铜层。散热基板包括氧化铝，氮化铝或氧化锆。共晶层包括掺杂有锌，锡，铟或其组合的氧化铝，氮化铝或氧化锆。

7. 发明申请

US20090152113A1 Gas detection system 审中-公开
标题翻译：气体检测系统
公开(公告)号：US20090152113A1
公开(公告)日：2009-06-18
申请号：US12379089
申请日：2009-02-12
申请人： Kuo-Chuang Chiu , Ren-Der Jean
发明人： Kuo-Chuang Chiu , Ren-Der Jean
IPC分类号： G01N27/26
CPC分类号： G01N27/4074
摘要： A gas detection system used for detecting a concentration of a gas in a second environment based on a concentration of the gas in a first environment is provided. The gas detection system may include a gas detecting device having two detection module, a first dielectric layer a second dielectric layer and a programmed control module. The control module may detect the voltage outputted by the first detection module to obtain the concentration of the gas in the second environment, when the detected voltage is smaller than a predetermined value. The control module may output a voltage signal to the second detection module and may detect the steady state current corresponding to the voltage signal to obtain the concentration of the gas in the second environment corresponding to the steady state current.
摘要翻译：提供了一种用于在第一环境中基于气体浓度来检测第二环境中的气体浓度的气体检测系统。气体检测系统可以包括具有两个检测模块，第一介电层，第二介电层和编程控制模块的气体检测装置。当检测到的电压小于预定值时，控制模块可以检测由第一检测模块输出的电压以获得第二环境中的气体浓度。控制模块可以向第二检测模块输出电压信号，并且可以检测对应于电压信号的稳态电流，以获得对应于稳态电流的第二环境中的气体浓度。

8. 发明授权

US08808494B2 Bonding material, method, and structure 有权
标题翻译：粘合材料，方法和结构
公开(公告)号：US08808494B2
公开(公告)日：2014-08-19
申请号：US13283490
申请日：2011-10-27
申请人： Kuo-Chuang Chiu
发明人： Kuo-Chuang Chiu
IPC分类号： B32B15/04 , B32B15/20 , B32B37/06 , B32B37/14 , B32B18/00 , B32B37/12 , C08L1/00 , C08K3/22 , C04B35/636 , C04B37/02 , C04B35/634 , B82Y30/00 , H01L33/64
CPC分类号： C04B37/028 , B82Y30/00 , C04B35/63416 , C04B35/6342 , C04B35/6365 , C04B37/025 , C04B2235/3281 , C04B2235/5445 , C04B2235/5454 , C04B2235/9607 , C04B2237/06 , C04B2237/064 , C04B2237/068 , C04B2237/08 , C04B2237/343 , C04B2237/348 , C04B2237/366 , C04B2237/407 , C04B2237/592 , C04B2237/60 , C04B2237/708 , C04B2237/72 , H01L33/641 , H01L2924/0002 , Y10T428/12056 , H01L2924/00
摘要： Disclosed is a bonding structure, including a heat dissipation substrate, a eutectic layer on the heat dissipation substrate, and a copper layer on the eutectic layer. The thermal dissipation substrate includes aluminum oxide, aluminum nitride, or zirconium oxide. The eutectic layer includes aluminum oxide, aluminum nitride, or zirconium oxide doped with zinc, tin, indium, or combinations thereof.
摘要翻译：公开了一种接合结构，其包括散热基板，散热基板上的共晶层和共晶层上的铜层。散热基板包括氧化铝，氮化铝或氧化锆。共晶层包括掺杂有锌，锡，铟或其组合的氧化铝，氮化铝或氧化锆。

9. 发明申请

US20080277662A1 SEMICONDUCTOR STRUCTURES 有权
标题翻译：半导体结构
公开(公告)号：US20080277662A1
公开(公告)日：2008-11-13
申请号：US12118606
申请日：2008-05-09
申请人： Kuo-Chuang Chiu , Tzer-Shen Lin
发明人： Kuo-Chuang Chiu , Tzer-Shen Lin
IPC分类号： H01L29/04
CPC分类号： H01L21/187
摘要： A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.
摘要翻译：公开了半导体结构。半导体结构包括多晶基板，形成在其上的第一单晶层和形成在第一单晶层上的第二单晶层。第一单晶层和多晶基板之间的热膨胀系数（CTE）的变化小于25％。在第一单晶层和多晶基板之间不存在晶格失配。

10. 发明授权

US08026517B2 Semiconductor structures 有权
标题翻译：半导体结构
公开(公告)号：US08026517B2
公开(公告)日：2011-09-27
申请号：US12118606
申请日：2008-05-09
申请人： Kuo-Chuang Chiu , Tzer-Shen Lin
发明人： Kuo-Chuang Chiu , Tzer-Shen Lin
IPC分类号： H01L29/04
CPC分类号： H01L21/187
摘要： A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.
摘要翻译：公开了半导体结构。半导体结构包括多晶基板，形成在其上的第一单晶层和形成在第一单晶层上的第二单晶层。第一单晶层和多晶基板之间的热膨胀系数（CTE）的变化小于25％。在第一单晶层和多晶基板之间不存在晶格失配。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式