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1. 发明申请

US20130256650A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130256650A1
公开(公告)日：2013-10-03
申请号：US13481856
申请日：2012-05-27
申请人： Chih-Chung Yang , Horng-Shyang Chen , Shao-Ying Ting , Che-Hao Liao , Chih-Yen Chen , Chieh Hsieh , Hao-Tsung Chen , Yu-Feng Yao , Dong-Ming Yeh
发明人： Chih-Chung Yang , Horng-Shyang Chen , Shao-Ying Ting , Che-Hao Liao , Chih-Yen Chen , Chieh Hsieh , Hao-Tsung Chen , Yu-Feng Yao , Dong-Ming Yeh
IPC分类号： H01L33/28 , H01L33/34 , H01L33/32 , H01L33/26
CPC分类号： H01L33/025 , H01L33/22 , H01L33/382 , H01L2933/0091
摘要： A semiconductor device and fabrication method thereof are provided, wherein the fabrication method of the semiconductor device includes the following steps. Forming a semiconductor layer on a substrate, wherein the semiconductor layer has a top surface and a bottom surface that is opposite to the top surface. The bottom surface is in contact with the substrate, and the top surface has a plurality of pits, the pits are extended from the top surface toward the bottom surface. Preparing a solution, wherein the solution includes a plurality of nanoparticles. Filling the nanoparticles into the pits. Forming a conducting layer on the semiconductor layer after filling the nanoparticles into the pits.
摘要翻译：提供了半导体器件及其制造方法，其中半导体器件的制造方法包括以下步骤。在基板上形成半导体层，其中半导体层具有与顶表面相对的顶表面和底表面。底表面与基底接触，并且顶表面具有多个凹坑，凹坑从顶表面向底表面延伸。制备溶液，其中溶液包括多个纳米颗粒。将纳米颗粒填充到凹坑中。在将纳米颗粒填充到凹坑中之后，在半导体层上形成导电层。

2. 发明申请

US20080035909A1 Method for controlling color contrast of a multi-wavelength light-emitting diode 失效
标题翻译：用于控制多波长发光二极管的色对比度的方法
公开(公告)号：US20080035909A1
公开(公告)日：2008-02-14
申请号：US11819175
申请日：2007-06-26
申请人： Chih-Feng Lu , Horng-Shyang Chen , Dong-Ming Yeh , Chi-Feng Huang , Tsung-Yi Tang , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang , Jeng-Jie Huang , Yung-Sheng Chen
发明人： Chih-Feng Lu , Horng-Shyang Chen , Dong-Ming Yeh , Chi-Feng Huang , Tsung-Yi Tang , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang , Jeng-Jie Huang , Yung-Sheng Chen
IPC分类号： H01L31/024 , H01L21/22 , H01L21/302
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.
摘要翻译：公开了一种用于控制根据本发明制造的多波长发光二极管（LED）的颜色对比度的方法。本发明至少包括提高多量子阱LED的结温的步骤，使得空穴分布在LED的较深量子阱层中以增加较深量子阱层的发光强度，由此控制由LED发射的多个波长的相对强度比。通过调节LED的p型电极层的厚度或通过改变台面面积尺寸来控制其相对的热辐射表面积来实现增加多量子阱LED的结温的步骤。

3. 发明授权

US07875478B2 Method for controlling color contrast of a multi-wavelength light-emitting diode 失效
标题翻译：用于控制多波长发光二极管的色对比度的方法
公开(公告)号：US07875478B2
公开(公告)日：2011-01-25
申请号：US11819175
申请日：2007-06-26
申请人： Dong-Ming Yeh , Horng-Shyang Chen , Chih-Feng Lu , Chi-Feng Huang , Tsung-Yi Tang , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang , Jeng-Jie Huang , Yung-Sheng Chen
发明人： Dong-Ming Yeh , Horng-Shyang Chen , Chih-Feng Lu , Chi-Feng Huang , Tsung-Yi Tang , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang , Jeng-Jie Huang , Yung-Sheng Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.
摘要翻译：公开了一种用于控制根据本发明制造的多波长发光二极管（LED）的颜色对比度的方法。本发明至少包括提高多量子阱LED的结温的步骤，使得空穴分布在LED的较深量子阱层中以增加较深量子阱层的发光强度，由此控制由LED发射的多个波长的相对强度比。通过调节LED的p型电极层的厚度或通过改变台面面积尺寸来控制其相对的热辐射表面积来实现增加多量子阱LED的结温的步骤。

4. 发明申请

US20080157056A1 Manufacturing method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device therefor 审中-公开
标题翻译：利用纳米晶体的多波长发光二极管的制造方法及其发光装置
公开(公告)号：US20080157056A1
公开(公告)日：2008-07-03
申请号：US11819169
申请日：2007-06-26
申请人： Dong-Ming Yeh , Horng-Shyang Chen , Chih-Feng Lu , Chi-Feng Huang , Wen-Yu Shiao , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang
发明人： Dong-Ming Yeh , Horng-Shyang Chen , Chih-Feng Lu , Chi-Feng Huang , Wen-Yu Shiao , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/26 , H01L33/08 , H01L33/16
摘要： A producing method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device thereof includes growing and processing a multiple-quantum-well layer based on stacking the mixture of at least two kinds of quantum wells to produce a two-wavelength light-emitting diode. Then, attaching nano-crystals on the two-wavelength light-emitting diode to transfer one of the wavelengths of the two-wavelength light-emitting diode to produce a poly-wavelength light-emitting diode. The device of the present invention can emit blue, green and red lights to produce white light.
摘要翻译：利用纳米晶体的多波长发光二极管的制造方法及其发光装置包括：通过堆叠至少两种量子阱的混合物来生长和处理多量子阱层，以产生双波长发光二极管。然后，将纳米晶体附着在双波长发光二极管上，以传输双波长发光二极管的波长之一，以产生多波长发光二极管。本发明的装置可以发出蓝色，绿色和红色的光以产生白光。

5. 发明申请

US20090114940A1 Light-Emitting Device 审中-公开
标题翻译：发光装置
公开(公告)号：US20090114940A1
公开(公告)日：2009-05-07
申请号：US12055119
申请日：2008-03-25
申请人： Chih-Chung Yang , Dong-Ming Yeh , Cheng-Yen Chen , Yen-Cheng Lu , Kun-Ching Shen , Chi-Feng Huang
发明人： Chih-Chung Yang , Dong-Ming Yeh , Cheng-Yen Chen , Yen-Cheng Lu , Kun-Ching Shen , Chi-Feng Huang
IPC分类号： H01L33/00
CPC分类号： H01L33/44
摘要： The invention provides a light-emitting device, comprising a light-emitting element and a surface plasmon coupling element connected to the light-emitting element. In an embodiment of the invention, the surface plasmon coupling element comprises a dielectric layer connected to the light-emitting element and a metal layer on the dielectric layer. In another embodiment of the invention, the light-emitting device is a light-emitting diode, comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer, and a surface plasmon coupling element adjacent to the n-type semiconductor layer. In a further embodiment of the invention, a current spreading layer on a second type semiconductor layer of the light-emitting device includes a plurality of strip-shaped structures, and the surface plasmon coupling element is disposed on the current spreading layer and filled into the gap between the strip-shaped structures of the current spreading layer.
摘要翻译：本发明提供了一种发光装置，包括发光元件和连接到发光元件的表面等离子体激元耦合元件。在本发明的实施例中，表面等离子体激元耦合元件包括连接到发光元件的电介质层和介电层上的金属层。在本发明的另一个实施例中，发光装置是发光二极管，其包括n型半导体层和p型半导体层之间的有源层以及与n型半导体层相邻的表面等离子体耦合元件半导体层。在本发明的另一实施例中，发光器件的第二类型半导体层上的电流扩展层包括多个条形结构，并且表面等离子体激元耦合元件设置在电流扩展层上并被填充到电流扩展层的带状结构之间的间隙。

6. 发明授权

US08052883B2 Method for forming periodic structure 有权
标题翻译：形成周期性结构的方法
公开(公告)号：US08052883B2
公开(公告)日：2011-11-08
申请号：US12115998
申请日：2008-05-06
申请人： Chih-Chung Yang , Cheng-Yen Chen , Cheng-Hung Lin , Dong-Ming Yeh
发明人： Chih-Chung Yang , Cheng-Yen Chen , Cheng-Hung Lin , Dong-Ming Yeh
IPC分类号： B29D11/00
CPC分类号： H01L33/20 , H01L2933/0083
摘要： A method for forming a periodic structure is disclosed. A structural layer and an optical modulation element are provided. A light is emitted to pass through the optical modulation element to irradiate interference strips on the structural layer. A photoelectrochemical etching (PEC) is performed to form the periodic structure according the interference strips irradiated on the structural layer.
摘要翻译：公开了形成周期性结构的方法。提供结构层和光调制元件。发射光以通过光调制元件以照射结构层上的干涉条。根据照射在结构层上的干涉条进行光电化学蚀刻（PEC）以形成周期性结构。

7. 发明申请

US20090227109A1 METHOD FOR FORMING PERIODIC STRUCTURE 有权
标题翻译：形成周期性结构的方法
公开(公告)号：US20090227109A1
公开(公告)日：2009-09-10
申请号：US12115998
申请日：2008-05-06
申请人： Chih-Chung Yang , Cheng-Yen Chen , Cheng-Hung Lin , Dong-Ming Yeh
发明人： Chih-Chung Yang , Cheng-Yen Chen , Cheng-Hung Lin , Dong-Ming Yeh
IPC分类号： H01L21/02
CPC分类号： H01L33/20 , H01L2933/0083
摘要： A method for forming a periodic structure is disclosed. A structural layer and an optical modulation element are provided. A light is emitted to pass through the optical modulation element to irradiate interference strips on the structural layer. A photoelectrochemical etching (PEC) is performed to form the periodic structure according the interference strips irradiated on the structural layer.
摘要翻译：公开了形成周期性结构的方法。提供结构层和光调制元件。发射光以通过光调制元件以照射结构层上的干涉条。根据照射在结构层上的干涉条进行光电化学蚀刻（PEC）以形成周期性结构。

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