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1. 发明申请

US20100075526A1 ELECTRONIC DEVICE ASSEMBLY 审中-公开
标题翻译：电子装置总成
公开(公告)号：US20100075526A1
公开(公告)日：2010-03-25
申请号：US12323481
申请日：2008-11-26
申请人： Chih-Chung Chiu , Huang-Lin Lee , Hung-yuan Lai , Chung-Kuan Wang
发明人： Chih-Chung Chiu , Huang-Lin Lee , Hung-yuan Lai , Chung-Kuan Wang
IPC分类号： H01R13/625
CPC分类号： H01R13/64
摘要： An electronic device assembly includes an electronic device and a mini connector. The electronic device includes a first housing. The first housing includes an assembling opening, a first positioning portion located adjacent to the assembling opening, and a first connecting terminal set located in the assembling opening. The mini connector includes a second housing, a connecting wire, and a second connecting terminal set. The second housing includes a second positioning portion having a shape complementary to that of the first positioning portion. The connecting wire passing through the second housing is electrically connected to the second connecting terminal set located in the second housing. The second positioning portion is located at one side of the second connecting terminal set. With the complementary relationship between the shapes of the second positioning portion and the first positioning portion, the mini connector is configured to be connected only to the electronic device.
摘要翻译：电子设备组件包括电子设备和迷你连接器。电子设备包括第一壳体。第一壳体包括组装开口，邻近组装开口定位的第一定位部分和位于组装开口中的第一连接端子组。迷你连接器包括第二壳体，连接线和第二连接端子组。第二壳体包括具有与第一定位部分的形状互补的形状的第二定位部分。穿过第二壳体的连接线电连接到位于第二壳体中的第二连接端子组。第二定位部位于第二连接端子组的一侧。利用第二定位部分和第一定位部分的形状之间的互补关系，微型连接器被构造成仅连接到电子设备。

2. 发明申请

US20090231793A1 EXPANSION UNIT FOR AN ELECTRONIC DEVICE 有权
标题翻译：电子设备扩展单元
公开(公告)号：US20090231793A1
公开(公告)日：2009-09-17
申请号：US12191308
申请日：2008-08-14
申请人： Chih-Chung Chiu , Huang-Lin Lee
发明人： Chih-Chung Chiu , Huang-Lin Lee
IPC分类号： H05K7/00 , H01R13/60
CPC分类号： H01R35/025 , H05K5/0247
摘要： An expansion unit detachably assembled to an electronic device is provided. The electronic device has a device connector on one side thereof. The expansion unit for the electronic device includes a base, a pivoting mechanism, and an expansion unit connector. The pivoting mechanism is located on one side of the base, and includes a shaft and a bearing fitting therewith. The expansion unit connector is disposed in the shaft and rotated along with the shaft in the bearing, and is detachably and electrically connected to the device connector. When the expansion unit connector is connected to the device connector, the position of the electronic device relative to the base may be adjusted by the pivoting mechanism.
摘要翻译：提供了可拆卸地组装到电子设备上的扩展单元。该电子设备在其一侧具有一个设备连接器。电子设备的扩展单元包括基座，枢转机构和扩展单元连接器。枢转机构位于基座的一侧，并且包括轴和与其配合的轴承。膨胀单元连接器设置在轴中并与轴一起在轴承中旋转，并且可拆卸地并且电连接到装置连接器。当扩展单元连接器连接到设备连接器时，电子设备相对于基座的位置可以通过枢转机构来调节。

3. 发明授权

US07933118B2 Expansion unit for an electronic device 有权
标题翻译：电子设备扩展单元
公开(公告)号：US07933118B2
公开(公告)日：2011-04-26
申请号：US12191308
申请日：2008-08-14
申请人： Chih-Chung Chiu , Huang-Lin Lee
发明人： Chih-Chung Chiu , Huang-Lin Lee
IPC分类号： G06F1/16
CPC分类号： H01R35/025 , H05K5/0247
摘要： An expansion unit detachably assembled to an electronic device is provided. The electronic device has a device connector on one side thereof. The expansion unit for the electronic device includes a base, a pivoting mechanism, and an expansion unit connector. The pivoting mechanism is located on one side of the base, and includes a shaft and a bearing fitting therewith. The expansion unit connector is disposed in the shaft and rotated along with the shaft in the bearing, and is detachably and electrically connected to the device connector. When the expansion unit connector is connected to the device connector, the position of the electronic device relative to the base may be adjusted by the pivoting mechanism.
摘要翻译：提供了可拆卸地组装到电子设备上的扩展单元。该电子设备在其一侧具有一个设备连接器。电子设备的扩展单元包括基座，枢转机构和扩展单元连接器。枢转机构位于基座的一侧，并且包括轴和与其配合的轴承。膨胀单元连接器设置在轴中并与轴一起在轴承中旋转，并且可拆卸地并且电连接到装置连接器。当扩展单元连接器连接到设备连接器时，电子设备相对于基座的位置可以通过枢转机构来调节。

4. 发明授权

US09123558B2 Bipolar junction transistor 有权
标题翻译：双极结晶体管
公开(公告)号：US09123558B2
公开(公告)日：2015-09-01
申请号：US13164744
申请日：2011-06-20
申请人： Sheng-Hung Fan , Chu-Wei Hu , Chien-Chih Lin , Chih-Chung Chiu , Zheng Zeng , Wei-Li Tsao
发明人： Sheng-Hung Fan , Chu-Wei Hu , Chien-Chih Lin , Chih-Chung Chiu , Zheng Zeng , Wei-Li Tsao
IPC分类号： H01L29/73 , H01L29/06 , H01L29/40 , H01L29/732
CPC分类号： H01L29/0692 , H01L29/0649 , H01L29/402 , H01L29/732
摘要： In accordance with one embodiment, the present invention provides a bipolar junction transistor including an emitter region; a base region; a first isolation between the emitter region and the base region; a gate on the first isolation region and overlapping at least a portion of a periphery of the emitter region; a collector region; and a second isolation between the base region and the collector region.
摘要翻译：根据一个实施例，本发明提供一种包括发射极区域的双极结型晶体管; 基地区在发射极区域和基极区域之间的第一隔离; 在所述第一隔离区域上的栅极并且与所述发射极区域的周边的至少一部分重叠; 收集区域以及在基极区域和集电极区域之间的第二隔离。

5. 发明授权

US06326290B1 Low resistance self aligned extended gate structure utilizing A T or Y shaped gate structure for high performance deep submicron FET 有权
标题翻译：低电阻自对准扩展栅极结构，利用高T或Y形栅极结构，用于高性能深亚微米FET
公开(公告)号：US06326290B1
公开(公告)日：2001-12-04
申请号：US09531782
申请日：2000-03-21
申请人： Chih-Chung Chiu
发明人： Chih-Chung Chiu
IPC分类号： H01L21336
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28114 , H01L21/31111 , H01L29/42376 , H01L29/4933 , H01L29/66545
摘要： Two alternate gate electrode structures are developed with expanded top portions of the gate electrode to maintain or reduce electrode effective sheet resistance improving high frequency performance and reducing gate delay in submicron FET ULSI devices. The method for producing these structures is presented. For one structure the top surface of the expanded portion of the electrode has an essentially flat surface such as would be represented in a T shaped gate element. With the alternative structure the top surface of the expanded portion of the electrode is inclined upward from near the center of the electrode. This surface angulation results in a Y shaped gate electrode element. Both structures effectively maintain or reduce electrode sheet resistance without increasing the underlying active channel length. The process is compatible with the self aligned gate process and is also compatible with salicidation methods. It provides the conventional LDD source drain regions as well as the vertical oxide gate electrode sidewall spacers.
摘要翻译：开发了两个交替的栅极电极结构，其具有扩展的栅电极的顶部，以维持或降低电极有效的薄层电阻，从而改善亚微米FET ULSI器件中的高频性能和减小栅极延迟。介绍了生产这些结构的方法。对于一种结构，电极的扩展部分的顶表面具有基本上平坦的表面，例如将被表示在T形门元件中。利用替代结构，电极的扩展部分的顶表面从电极的中心附近向上倾斜。该表面成角度形成Y形栅电极元件。两种结构都能有效地维持或降低电极片的电阻而不增加潜在的有源沟道长度。该过程与自对准的浇口工艺兼容，并且还与盐化方法兼容。它提供常规的LDD源极漏极区以及垂直氧化物栅电极侧壁间隔物。

6. 发明申请

US20120319243A1 BIPOLAR JUNCTION TRANSISTOR 有权
标题翻译：双极接头晶体管
公开(公告)号：US20120319243A1
公开(公告)日：2012-12-20
申请号：US13164744
申请日：2011-06-20
申请人： Sheng-Hung Fan , Chu-Wei Hu , Chien-Chih Lin , Chih-Chung Chiu , Zheng Zeng , Wei-Li Tsao
发明人： Sheng-Hung Fan , Chu-Wei Hu , Chien-Chih Lin , Chih-Chung Chiu , Zheng Zeng , Wei-Li Tsao
IPC分类号： H01L29/73
CPC分类号： H01L29/0692 , H01L29/0649 , H01L29/402 , H01L29/732
摘要： In accordance with one embodiment, the present invention provides a bipolar junction transistor including an emitter region; a base region; a first isolation between the emitter region and the base region; a gate on the first isolation region and overlapping at least a portion of a periphery of the emitter region; a collector region; and a second isolation between the base region and the collector region.
摘要翻译：根据一个实施例，本发明提供一种包括发射极区域的双极结型晶体管; 基地区在发射极区域和基极区域之间的第一隔离; 在所述第一隔离区域上的栅极并且与所述发射极区域的周边的至少一部分重叠; 收集区域以及在基极区域和集电极区域之间的第二隔离。

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