专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08071890B2 Electrically conductive structure of circuit board and circuit board using the same 有权
标题翻译：导电结构的电路板和电路板使用相同
公开(公告)号：US08071890B2
公开(公告)日：2011-12-06
申请号：US12181330
申请日：2008-07-29
申请人： Chien-Min Hsu , Shih-Hsien Wu , Shinn-Juh Lai , Min-Lin Lee
发明人： Chien-Min Hsu , Shih-Hsien Wu , Shinn-Juh Lai , Min-Lin Lee
IPC分类号： H05K1/16
CPC分类号： H05K1/112 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H05K1/0228 , H05K1/0231 , H05K1/0263 , H05K1/162 , H05K1/185 , H05K3/429 , H05K3/4602 , H05K2201/09245 , H05K2201/09627 , H05K2201/09709 , H05K2201/10734 , H01L2224/05599
摘要： An electrically conductive structure includes a first conductive structure and a second conductive structure. Each has a conducting section at one end and a coupling section at the other end. The first and second conducting sections are electrically connected to a power and ground contact of an electronic device, respectively. The first and second coupling sections are respectively connected with power and ground layer of a circuit board. The first coupling sections are connected with the first conducting section through first extending sections and the second coupling sections are connected with the second conducting section through second extending sections. At least two coupling sections of the conductive structures are arranged in pairs. The first conductive structure and the second conductive structure are arranged in a staggered array to form two wiring loops having opposite current directions, thereby generating a magnetic flux cancellation effect.
摘要翻译：导电结构包括第一导电结构和第二导电结构。每个在一端具有导电部分，另一端具有耦合部分。第一和第二导电部分分别电连接到电子设备的电源和接地触点。第一和第二耦合部分分别与电路板的电源层和接地层连接。第一耦合部分通过第一延伸部分与第一导电部分连接，第二耦合部分通过第二延伸部分与第二导电部分连接。导电结构的至少两个耦合部分成对布置。第一导电结构和第二导电结构以交错阵列布置以形成具有相反电流方向的两个布线环，从而产生磁通消除效果。

2. 发明授权

US07742276B2 Wiring structure of laminated capacitors 有权
标题翻译：层压电容器的接线结构
公开(公告)号：US07742276B2
公开(公告)日：2010-06-22
申请号：US11950381
申请日：2007-12-04
申请人： Chien-Min Hsu , Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lai
发明人： Chien-Min Hsu , Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lai
IPC分类号： H01G4/228
CPC分类号： H05K1/162 , H01L2224/16225 , H01L2924/00011 , H01L2924/00014 , H05K1/112 , H05K3/429 , H05K3/4688 , H05K2201/0792 , H05K2201/09309 , H05K2201/09536 , H05K2201/09636 , H05K2201/10734 , H01L2224/0401
摘要： The present invention relates to a wiring structure for reducing the equivalent series inductance (ESL) of a laminated capacitor. The laminated capacitor comprises a number of conductive layers, a power via extending along a thickness direction of the laminated capacitor and arranged to extend from the top conductive layer to the bottom conductive layer, and a ground via extending along the thickness direction of the laminated capacitor and arranged to extend from the top conductive layer to the bottom conductive layer. The conductive layers include a set of first conductive layers and a set of second conductive layers. The power via is electrically coupled to the first conductive layers and the ground via is electrically coupled to the second conductive layers. The laminated capacitor further comprises a supplemental via between the power via and the ground via. The supplemental via is shorter in length than the power via and the ground via. The supplemental via is electrically coupled to one of the first conductive layers and the second conductive layer.
摘要翻译：本发明涉及一种用于降低层叠电容器的等效串联电感（ESL）的布线结构。层叠电容器包括多个导电层，沿层叠电容器的厚度方向延伸的电力通孔，并且从顶部导电层延伸至底部导电层，沿着层叠电容器的厚度方向延伸的接地通孔并布置成从顶部导电层延伸到底部导电层。导电层包括一组第一导电层和一组第二导电层。电源通孔电耦合到第一导电层，并且接地通孔电耦合到第二导电层。层叠电容器还包括电源通孔和接地通孔之间的补充通路。补充通孔的长度要短于电源通孔和接地通孔。辅助通孔电耦合到第一导电层和第二导电层之一。

3. 发明授权

US08227894B2 Stepwise capacitor structure and substrate employing the same 有权
标题翻译：逐步电容器结构和使用它的衬底
公开(公告)号：US08227894B2
公开(公告)日：2012-07-24
申请号：US12410466
申请日：2009-03-25
申请人： Min-Lin Lee , Shih-Hsien Wu , Shinn-Juh Lai , Shur-Fen Liu
发明人： Min-Lin Lee , Shih-Hsien Wu , Shinn-Juh Lai , Shur-Fen Liu
IPC分类号： H01L29/423
CPC分类号： H01G4/30 , H01G4/012 , H01G4/232 , H01L23/50 , H01L23/642 , H01L28/40 , H01L2224/16225 , H01L2924/09701 , H01L2924/3011
摘要： A stepwise capacitor structure includes at least one stepwise conductive layer. The stepwise capacitor represents a feature of multiple capacitors. When currents flow through the stepwise capacitor, different current paths are presented in between an upper conductor and a bottom conductor of the stepwise capacitor in response to different current frequency; different inductor is induced in each path and decoupled by a stepwise capacitor structure as disclosed herein.
摘要翻译：逐步电容器结构包括至少一个逐步导电层。逐步电容器表示多个电容器的特征。当电流流过逐级电容器时，响应于不同的电流频率，在逐层电容器的上导体和底导体之间存在不同的电流路径; 在每个路径中感应不同的电感器，并通过如本文所公开的逐步电容器结构去耦合。

4. 发明申请

US20090097175A1 ESD PROTECTION SUBSTRATE AND INTEGRATED CIRCUIT UTILIZING THE SAME 有权
标题翻译： ESD保护基板和整合电路
公开(公告)号：US20090097175A1
公开(公告)日：2009-04-16
申请号：US12047283
申请日：2008-03-12
申请人： Chen-Hsuan Chiu , Min-Lin Lee , Shinn-Juh Lai , Shih-Hsien Wu , Chi-Liang Pan
发明人： Chen-Hsuan Chiu , Min-Lin Lee , Shinn-Juh Lai , Shih-Hsien Wu , Chi-Liang Pan
IPC分类号： H02H9/00 , H01L27/02
CPC分类号： H01L23/60 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/49171 , H01L2924/00014 , H01L2924/3011 , H01L2224/05599
摘要： An ESD protection substrate is disclosed. The ESD protection substrate includes a first conductor, a second conductor, a pointed structure, and an ESD protection material. The pointed structure is electrically connected to the first or the second conductor. The ESD protection material is disposed between the first and the second conductors.
摘要翻译：公开了ESD保护衬底。 ESD保护衬底包括第一导体，第二导体，尖锐结构和ESD保护材料。尖的结构电连接到第一或第二导体。 ESD保护材料设置在第一和第二导体之间。

5. 发明授权

US08488299B2 Capacitor structure 有权
标题翻译：电容结构
公开(公告)号：US08488299B2
公开(公告)日：2013-07-16
申请号：US12841456
申请日：2010-07-22
申请人： Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lai , Shur-Fen Liu , Meng-Hua Chen , Chin-Hsien Hung
发明人： Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lai , Shur-Fen Liu , Meng-Hua Chen , Chin-Hsien Hung
IPC分类号： H01G4/005 , H01G5/06
CPC分类号： H01G4/005
摘要： The disclosure provides a capacitor structure. A first dielectric layer is disposed over the first electrode layer. A second electrode layer is disposed over the first dielectric layer. At least one of the first electrode layer and the second electrode layer has a peak-valley like structure to create at least two different gap distances therebetween, thereby providing parallel combinations of at least two different capacitances.
摘要翻译：本公开提供一种电容器结构。第一电介质层设置在第一电极层上。第二电极层设置在第一介电层上。第一电极层和第二电极层中的至少一个具有峰谷状结构，以在它们之间产生至少两个不同的间隙距离，从而提供至少两个不同电容的并联组合。

6. 发明申请

US20100321862A1 Capacitor devices 有权
标题翻译：电容器件
公开(公告)号：US20100321862A1
公开(公告)日：2010-12-23
申请号：US12805886
申请日：2010-08-23
申请人： Shih-Hsien Wu , Shinn-Juh Lai , Min-Lin Lee , Shur-Fen Liu
发明人： Shih-Hsien Wu , Shinn-Juh Lai , Min-Lin Lee , Shur-Fen Liu
IPC分类号： H01G4/06
CPC分类号： H01G4/06 , H01G4/12 , H01G4/1227 , H01G4/14 , H01G4/20 , H01G4/206 , H05K1/162 , H05K3/4611 , H05K2201/0187 , H05K2201/0195 , H05K2201/09672 , H05K2201/2036 , Y10T29/417
摘要： A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer.
摘要翻译：引入具有电容的电容器件。电容器装置包括至少一个电容元件。所述至少电容元件包括彼此相对的一对第一导电层，至少一个形成在所述第一导电层中的至少一个的表面上的第一电介质层，以及夹在所述第一导电层。第一介电层具有第一介电常数，第二介电层具有第二介电常数。电容器器件的电容取决于第一介电层和第二介电层的介电参数。介电参数包括第一介电常数和至少一个第一介电层的厚度和第二介电常数和第二介电层的厚度。

7. 发明申请

US20090180236A1 STEPWISE CAPACITOR STRUCTURE, FABRICATION METHOD THEREOF AND SUBSTRATE EMPLOYING THE SAME 有权
标题翻译：步骤电容器结构，其制造方法和使用其的基板
公开(公告)号：US20090180236A1
公开(公告)日：2009-07-16
申请号：US12410466
申请日：2009-03-25
申请人： Min-Lin Lee , Shih-Hsien Wu , Shinn-Juh Lai , Shur-Fen Liu
发明人： Min-Lin Lee , Shih-Hsien Wu , Shinn-Juh Lai , Shur-Fen Liu
IPC分类号： H01G4/30 , H01L21/34
CPC分类号： H01G4/30 , H01G4/012 , H01G4/232 , H01L23/50 , H01L23/642 , H01L28/40 , H01L2224/16225 , H01L2924/09701 , H01L2924/3011
摘要： A stepwise capacitor structure includes at least one stepwise conductive layer. The stepwise capacitor represents a feature of multiple capacitors. When currents flow through the stepwise capacitor, different current paths are presented in between an upper conductor and a bottom conductor of the stepwise capacitor in response to different current frequency; different inductor is induced in each path and decoupled by a stepwise capacitor structure as disclosed herein.
摘要翻译：逐步电容器结构包括至少一个逐步导电层。逐步电容器表示多个电容器的特征。当电流流过逐级电容器时，响应于不同的电流频率，在逐层电容器的上导体和底导体之间存在不同的电流路径; 在每个路径中感应不同的电感器，并通过如本文所公开的逐步电容器结构去耦合。

8. 发明授权

US08035951B2 Capacitor devices 有权
标题翻译：电容器件
公开(公告)号：US08035951B2
公开(公告)日：2011-10-11
申请号：US12805886
申请日：2010-08-23
申请人： Shih-Hsien Wu , Shinn-Juh Lai , Min-Lin Lee , Shur-Fen Liu
发明人： Shih-Hsien Wu , Shinn-Juh Lai , Min-Lin Lee , Shur-Fen Liu
IPC分类号： H01G4/06
CPC分类号： H01G4/06 , H01G4/12 , H01G4/1227 , H01G4/14 , H01G4/20 , H01G4/206 , H05K1/162 , H05K3/4611 , H05K2201/0187 , H05K2201/0195 , H05K2201/09672 , H05K2201/2036 , Y10T29/417
摘要： A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer.
摘要翻译：引入具有电容的电容器件。电容器装置包括至少一个电容元件。所述至少电容元件包括彼此相对的一对第一导电层，至少一个形成在所述第一导电层中的至少一个的表面上的第一电介质层，以及夹在所述第一导电层。第一介电层具有第一介电常数，第二介电层具有第二介电常数。电容器器件的电容取决于第一介电层和第二介电层的介电参数。介电参数包括第一介电常数和至少一个第一介电层的厚度和第二介电常数和第二介电层的厚度。

9. 发明授权

US07649723B2 ESD protection substrate and integrated circuit utilizing the same 有权
标题翻译： ESD保护基板和利用其的集成电路
公开(公告)号：US07649723B2
公开(公告)日：2010-01-19
申请号：US12047283
申请日：2008-03-12
申请人： Chen-Hsuan Chiu , Min-Lin Lee , Shinn-Juh Lai , Shih-Hsien Wu , Chi-Liang Pan
发明人： Chen-Hsuan Chiu , Min-Lin Lee , Shinn-Juh Lai , Shih-Hsien Wu , Chi-Liang Pan
IPC分类号： H02H9/00 , H02H3/20 , H02H9/04 , H02H3/22 , H02H1/00 , H02H1/04 , H02H9/06
CPC分类号： H01L23/60 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/49171 , H01L2924/00014 , H01L2924/3011 , H01L2224/05599
摘要： An ESD protection substrate is disclosed. The ESD protection substrate includes a first conductor, a second conductor, a pointed structure, and an ESD protection material. The pointed structure is electrically connected to the first or the second conductor. The ESD protection material is disposed between the first and the second conductors.
摘要翻译：公开了ESD保护衬底。 ESD保护衬底包括第一导体，第二导体，尖锐结构和ESD保护材料。尖的结构电连接到第一或第二导体。 ESD保护材料设置在第一和第二导体之间。

10. 发明授权

US07894172B2 ESD protection structure 有权
标题翻译： ESD保护结构
公开(公告)号：US07894172B2
公开(公告)日：2011-02-22
申请号：US12191179
申请日：2008-08-13
申请人： Chi-Liang Pan , Min-Lin Lee , Shinn-Juh Lai , Shih-Hsien Wu , Chen-Hsuan Chiu
发明人： Chi-Liang Pan , Min-Lin Lee , Shinn-Juh Lai , Shih-Hsien Wu , Chen-Hsuan Chiu
IPC分类号： H05F3/00
CPC分类号： H01L23/60 , H01L2224/16225 , H01L2224/48091 , H01L2924/15311 , H01L2924/3011 , H05K1/0257 , H05K1/0259 , H05K1/0373 , H05K1/116 , H05K1/167 , H05K3/4688 , H05K2201/0738 , H05K2201/09718 , H01L2924/00014
摘要： An ESD protection structure is provided. A substrate includes a first voltage variable material and has a first surface, a second surface substantially paralleled to the first surface and a via connecting the first and second surfaces. A first metal layer is disposed in the substrate for coupling to a ground terminal. The first voltage variable material is in a conductive state when an ESD event occurs, such that the via is electrically connected with the first metal layer to form a discharge path, and the first voltage variable material is in an isolation state when the ESD event is absent, such that the via is electrically isolated from the first metal layer.
摘要翻译：提供ESD保护结构。衬底包括第一电压可变材料，并具有第一表面，与第一表面基本平行的第二表面和连接第一表面和第二表面的通孔。第一金属层设置在衬底中用于耦合到接地端子。当ESD事件发生时，第一电压可变材料处于导通状态，使得通孔与第一金属层电连接以形成放电路径，并且当ESD事件为ESD时，第一电压可变材料处于隔离状态不存在，使得通孔与第一金属层电隔离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式