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    • 2. 发明专利
    • Microwave probe and thermotherapeutic apparatus
    • 微波探针和热疗仪
    • JP2011217960A
    • 2011-11-04
    • JP2010090599
    • 2010-04-09
    • Chiba UnivHoya CorpHoya株式会社国立大学法人 千葉大学
    • SAITO KAZUYUKIITO KOICHITSUYUKUCHI TOSHIOORITA MASAHIROWATABE ATSUSHI
    • A61N5/02A61F7/00A61F7/12
    • PROBLEM TO BE SOLVED: To reduce burdens on an operator and to mitigate influence on human body tissue during an operation.SOLUTION: A microwave probe is freely inserted and removed to/from the insertion channel of an endoscope. The microwave probe includes: an antenna part 5 which includes a microwave antenna provided with a warming part 5a for warming a lesion; a guide part 7 which is for guiding the warming part 5a in the antenna part 5 to the lesion and is freely moved relative to the antenna part 5; a direction stipulation part 8 which stipulates the moving direction of the antenna part 5 to a direction along the guide part 7; and an end part 9 which is provided on the end of the microwave probe. The end part 9 is in a tapered shape and is flexible.
    • 要解决的问题:减轻操作者的负担并减轻手术中对人体组织的影响。

      解决方案:微波探头可自由插入内窥镜插入通道或从内窥镜的插入通道中取出。 微波探测器包括:天线部分5,其包括设置有用于加热病变的加温部分5a的微波天线; 引导部7,其用于将天线部5中的加温部5a引导到病变部并相对于天线部5自由移动; 方向规定部8,其将天线部5的移动方向规定为沿着引导部7的方向; 以及设置在微波探头的端部上的端部9。 端部9呈锥形并且是柔性的。 版权所有(C)2012,JPO&INPIT

    • 10. 发明专利
    • Hole injection electrode and semiconductor device
    • 孔注射电极和半导体器件
    • JP2005294415A
    • 2005-10-20
    • JP2004105125
    • 2004-03-31
    • Hoya CorpHoya株式会社
    • HATSUDA MISAKIYANAGIDA HIROAKIORITA MASAHIRO
    • H01L21/28H01L29/861H01L31/04H01L31/10H01L33/28H01L33/40H01S5/02H01S5/347H01L33/00
    • Y02E10/50
    • PROBLEM TO BE SOLVED: To provide a hole injection electrode that is applicable for a material such as a ZnSe compound semiconductor wherein the upper end of a valence band is deeper from a vacuum order, and superior in the controllability of electric characteristic, adhesion with a semiconductor, and long-term stability. SOLUTION: The hole injection electrode 15 is formed with an electrode layer made of a material represented by a composition formula of (Pd x Pt y Ni z ) u ZnSe (u: real number of 4≤u≤6; x, y, z: real numbers of x+y+z=1, 1>x≥0, 1>y≥0, 1>z≥0). The semiconductor device may be formed with a p-type semiconductor layer 14 made of a material represented by a composition formula of (Zn 1-α-β Mg α Cd β )(Se 1-m-n S m Te n ) (mole ratios m, n and α, β: m+n≤1, 0≤m≤1, 0≤n≤0.2, 0≤α≤0.2, 0≤β≤0.2) and the hole injection electrode 15 formed so that the electrode layer is in contact with the p-type semiconductor layer 14. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了提供一种适用于诸如ZnSe化合物半导体的材料的空穴注入电极,其中价带的上端从真空次数越深,电特性的可控性越好, 与半导体粘合,长期稳定。 解决方案:空穴注入电极15形成有由以下组成式表示的材料制成的电极层:(Pd x Pt Y Ni < ZnSe(u:4≤u≤6的实数; x,y,z:x + y + z的实数,1>x≥0,1 >y≥0,1>z≥0)。 半导体器件可以形成有由以下组成式表示的材料制成的p型半导体层14:(Zn 1-α-βα Cd )(Se 1-mn )(摩尔比m,n和α,β:m +n≤1,0≤m≤1,0≤n≤0.2,0≤α≤0.2,0≤β≤0.2),空穴注入电极15形成为使得电极层与p型半导体 第14层。版权所有(C)2006年,JPO&NCIPI