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1. 发明申请

US20050172722A1 Pressure sensor and method for fabricating the same 有权
标题翻译：压力传感器及其制造方法
公开(公告)号：US20050172722A1
公开(公告)日：2005-08-11
申请号：US10507367
申请日：2003-03-27
申请人： Chiaki Kobayashi , Daisuke Sumi , Hiroshi Inamura , Togo Morifuji , Koji Yoshida , Masaki Endo , Sayaka Hiura , Takao Yamauchi , Syunsuke Yamaura , Kaoru Taketa , Kimihiko Nagami
发明人： Chiaki Kobayashi , Daisuke Sumi , Hiroshi Inamura , Togo Morifuji , Koji Yoshida , Masaki Endo , Sayaka Hiura , Takao Yamauchi , Syunsuke Yamaura , Kaoru Taketa , Kimihiko Nagami
IPC分类号： B81B3/00 , G01L1/14 , G01L1/20 , G01L5/22 , G06K9/00 , G01L9/00 , G01L9/16
CPC分类号： G01L5/228 , G01L1/14 , G01L1/205 , G06K9/0002
摘要： A pressure sensor comprising a plurality of sensor parts arranged in matrix. A first electrode being connected with first wiring and a second electrode being connected with second wiring are disposed oppositely through a cavity part in the sensor part. The second electrode bends to the first electrode side in response to a pressure from a specimen and touches the first electrode upon application of a pressure of a specified level or above. When the specimen is pressed against a pressure detecting region, both electrodes touch each other at a sensor part corresponding to a protrusions of the specimen and are separated at a sensor part corresponding to a recess. When a scanning signal is fed from a scanning circuit to one wiring and presence of a signal flowing through the second wiring is detected by a sensing circuit, a pressure being applied to each sensor part can be detected. Furthermore, the shape is detected by feeding the scanning signal from the scanning circuit to each first wiring sequentially and scanning the pressure detecting region generally.
摘要翻译：一种压力传感器，包括排列成矩阵的多个传感器部件。与第一布线连接的第一电极和与第二布线连接的第二电极相对设置在传感器部分中的空腔部分中。第二电极响应于来自试样的压力而弯曲到第一电极侧，并且在施加指定水平或更高的压力时接触第一电极。当样本被压在压力检测区域上时，两个电极在对应于样本的突起的传感器部分处彼此接触并且在与凹部对应的传感器部分处分离。当扫描信号从扫描电路馈送到一个布线并且通过感测电路检测到流过第二布线的信号的存在时，可以检测施加到每个传感器部分的压力。此外，通过将扫描电路的扫描信号顺序地馈送到每个第一布线来检测形状，并且一般扫描压力检测区域。

2. 发明授权

US07278326B2 Pressure sensor and method for fabricating the same 有权
标题翻译：压力传感器及其制造方法
公开(公告)号：US07278326B2
公开(公告)日：2007-10-09
申请号：US10507367
申请日：2003-03-27
申请人： Chiaki Kobayashi , Daisuke Sumi , Hiroshi Inamura , Togo Morifuji , Koji Yoshida , Masaki Endo , Sayaka Hiura , Takao Yamauchi , Syunsuke Yamaura , Kaoru Taketa , Kimihiko Nagami
发明人： Chiaki Kobayashi , Daisuke Sumi , Hiroshi Inamura , Togo Morifuji , Koji Yoshida , Masaki Endo , Sayaka Hiura , Takao Yamauchi , Syunsuke Yamaura , Kaoru Taketa , Kimihiko Nagami
IPC分类号： G01L9/00
CPC分类号： G01L5/228 , G01L1/14 , G01L1/205 , G06K9/0002
摘要： A pressure sensor comprising a plurality of sensor parts arranged in matrix. A first electrode being connected with first wiring and a second electrode being connected with second wiring are disposed oppositely through a cavity part in the sensor part. The second electrode bends to the first electrode side in response to a pressure from a specimen and touches the first electrode upon application of a pressure of a specified level or above. When the specimen is pressed against a pressure detecting region, both electrodes touch each other at a sensor part corresponding to a protrusions of the specimen and are separated at a sensor part corresponding to a recess. When a scanning signal is fed from a scanning circuit to one wiring and presence of a signal flowing through the second wiring is detected by a sensing circuit, a pressure being applied to each sensor part can be detected. Furthermore, the shape is detected by feeding the scanning signal from the scanning circuit to each first wiring sequentially and scanning the pressure detecting region generally.
摘要翻译：一种压力传感器，包括排列成矩阵的多个传感器部件。与第一布线连接的第一电极和与第二布线连接的第二电极相对设置在传感器部分中的空腔部分中。第二电极响应于来自试样的压力而弯曲到第一电极侧，并且在施加指定水平或更高的压力时接触第一电极。当样本被压在压力检测区域上时，两个电极在对应于样本的突起的传感器部分彼此接触并且在对应于凹部的传感器部分处分离。当扫描信号从扫描电路馈送到一个布线并且通过感测电路检测到流过第二布线的信号的存在时，可以检测施加到每个传感器部分的压力。此外，通过将扫描电路的扫描信号顺序地馈送到每个第一布线来检测形状，并且一般扫描压力检测区域。

3. 发明授权

US07353719B2 Pressure sensor and method for fabricating the same 有权
标题翻译：压力传感器及其制造方法
公开(公告)号：US07353719B2
公开(公告)日：2008-04-08
申请号：US10507687
申请日：2003-03-27
申请人： Sayaka Hiura , Takao Yamauchi , Kaoru Taketa , Koji Yoshida , Masaki Endo
发明人： Sayaka Hiura , Takao Yamauchi , Kaoru Taketa , Koji Yoshida , Masaki Endo
IPC分类号： G01L1/00
CPC分类号： G01L5/228 , G01L1/14 , G01L1/205 , G01L9/0042 , G06K9/0002 , Y10T29/43
摘要： A pressure sensor comprising a plurality of sensor parts arranged in matrix. A first electrode being connected with first wiring and a second electrode being connected with second wiring are disposed oppositely through a cavity part in the sensor part. The second electrode bends to the first electrode side in response to a pressure from a specimen and touches the first electrode upon application of a pressure of a specified level or above. When the specimen is pressed against a pressure detecting region, both electrodes touch each other at a sensor part corresponding to a protrusion of the specimen and are separated at a sensor part corresponding to a recess. When a scanning signal is fed from a scanning circuit to one wiring and presence of a signal flowing through the second wiring is detected by a sensing circuit, a pressure being applied to each sensor part can be detected. Furthermore, the shape is detected by feeding the scanning signal from the scanning circuit to each first wiring sequentially and scanning the pressure detecting region generally.
摘要翻译：一种压力传感器，包括排列成矩阵的多个传感器部件。与第一布线连接的第一电极和与第二布线连接的第二电极相对设置在传感器部分中的空腔部分中。第二电极响应于来自试样的压力而弯曲到第一电极侧，并且在施加指定水平或更高的压力时接触第一电极。当样本被压在压力检测区域上时，两个电极在对应于样本的突起的传感器部分处彼此接触并且在对应于凹部的传感器部分分离。当扫描信号从扫描电路馈送到一个布线并且通过感测电路检测到流过第二布线的信号的存在时，可以检测施加到每个传感器部分的压力。此外，通过将扫描电路的扫描信号顺序地馈送到每个第一布线来检测形状，并且一般扫描压力检测区域。

4. 发明申请

US20050284229A1 Pressure sensor and method for fabricating the same 有权
标题翻译：压力传感器及其制造方法
公开(公告)号：US20050284229A1
公开(公告)日：2005-12-29
申请号：US10507687
申请日：2003-03-27
申请人： Sayaka Hiura , Takao Yamauchi , Kaoru Taketa , Koji Yoshida , Masaki Endo
发明人： Sayaka Hiura , Takao Yamauchi , Kaoru Taketa , Koji Yoshida , Masaki Endo
IPC分类号： B81B3/00 , G01L1/14 , G01L1/20 , G01L5/22 , G01L9/00 , G06K9/00
CPC分类号： G01L5/228 , G01L1/14 , G01L1/205 , G01L9/0042 , G06K9/0002 , Y10T29/43
摘要： A pressure sensor comprising a plurality of sensor parts arranged in matrix. A first electrode being connected with first wiring and a second electrode being connected with second wiring are disposed oppositely through a cavity part in the sensor part. The second electrode bends to the first electrode side in response to a pressure from a specimen and touches the first electrode upon application of a pressure of a specified level or above. When the specimen is pressed against a pressure detecting region, both electrodes touch each other at a sensor part corresponding to a protrusion of the specimen and are separated at a sensor part corresponding to a recess. When a scanning signal is fed from a scanning circuit to one wiring and presence of a signal flowing through the second wiring is detected by a sensing circuit, a pressure being applied to each sensor part can be detected. Furthermore, the shape is detected by feeding the scanning signal from the scanning circuit to each first wiring sequentially and scanning the pressure detecting region generally.
摘要翻译：一种压力传感器，包括排列成矩阵的多个传感器部件。与第一布线连接的第一电极和与第二布线连接的第二电极相对设置在传感器部分中的空腔部分中。第二电极响应于来自试样的压力而弯曲到第一电极侧，并且在施加指定水平或更高的压力时接触第一电极。当样本被压在压力检测区域上时，两个电极在对应于样本的突起的传感器部分处彼此接触并且在对应于凹部的传感器部分分离。当扫描信号从扫描电路馈送到一个布线并且通过感测电路检测到流过第二布线的信号的存在时，可以检测施加到每个传感器部分的压力。此外，通过将扫描电路的扫描信号顺序地馈送到每个第一布线来检测形状，并且一般扫描压力检测区域。

5. 发明授权

US5939749A Split gate transistor array 失效
标题翻译：分流栅晶体管阵列
公开(公告)号：US5939749A
公开(公告)日：1999-08-17
申请号：US824213
申请日：1997-03-25
申请人： Kaoru Taketa , Takayuki Kaida
发明人： Kaoru Taketa , Takayuki Kaida
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H01L29/68 , H01L29/78
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324 , Y10S257/90
摘要： A split gate transistor having a semiconductor substrate, a source region and a drain region formed on the semiconductor substrate. A channel region is formed between the source region and the drain region. A floating gate electrode is formed substantially above the channel region. The floating gate electrode has an end surface. A control gate electrode is provided over the semiconductor substrate so as to overlap the floating gate electrode. The control gate electrode has an end surface formed level with the end surface of the floating gate electrode.
摘要翻译：一种分离栅极晶体管，其具有形成在半导体衬底上的半导体衬底，源极区和漏极区。在源极区域和漏极区域之间形成沟道区域。浮栅电极基本上形成在沟道区的上方。浮栅电极具有端面。控制栅电极设置在半导体衬底上，以与浮栅电极重叠。控制栅电极具有与浮栅电极的端面成一定水平的端面。

6. 发明授权

US5411911A Process for producing DRAM semiconductor devices 失效
标题翻译：用于制造DRAM半导体器件的工艺
公开(公告)号：US5411911A
公开(公告)日：1995-05-02
申请号：US143850
申请日：1993-10-25
申请人： Norihiro Ikeda , Kaoru Taketa
发明人： Norihiro Ikeda , Kaoru Taketa
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L21/70
CPC分类号： H01L27/10861 , H01L27/10835 , Y10S438/948
摘要： A process for producing a semiconductor device comprises the following steps 1 to 9. In step 1, a field oxide layer is formed on a first conductivity type semiconductor substrate to define an active region. In step 2, gate electrodes, second conductivity type source regions and drain regions are formed on the active region, word line are formed on the field oxide layer, and an insulating layer is formed over the substrate. In step 3, contact holes are formed through the insulating layer so as to partly expose the source regions. In step 4, a polysilicon layer is formed over the exposed source region and the entire surface of the insulating layer. In step 5, a photoresist pattern is formed on the polysilicon layer. In step 6, the polysilicon layer is etched under etching conditions where selectivity to the insulating layer is high using the photoresist pattern as an etching mask to simultaneously form a storage pattern and trenches in the semiconductor substrate at the source regions. In step 7, the semiconductor substrate is doped along the storage electrode pattern and the inner surface of the trenches with a second conductivity type impurity. In step 8, a dielectric layer is formed on the doped storage electrode pattern and the doped inner wall surfaces of the trenches. Finally in step 9, an opposite electrode is formed on the dielectric layer.
摘要翻译：制造半导体器件的方法包括以下步骤1至9.在步骤1中，在第一导电型半导体衬底上形成场氧化物层以限定有源区。在步骤2中，在有源区上形成栅电极，第二导电型源极区和漏极区，在场氧化物层上形成字线，在衬底上形成绝缘层。在步骤3中，通过绝缘层形成接触孔，以便部分地暴露源极区域。在步骤4中，在暴露的源极区域和绝缘层的整个表面上形成多晶硅层。在步骤5中，在多晶硅层上形成光刻胶图形。在步骤6中，在使用光致抗蚀剂图案作为蚀刻掩模的绝缘层选择性高的蚀刻条件下蚀刻多晶硅层，同时在源极区域形成半导体衬底中的存储图案和沟槽。在步骤7中，半导体衬底沿着存储电极图案和沟槽的内表面以第二导电类型杂质掺杂。在步骤8中，在掺杂的存储电极图案和沟槽的掺杂的内壁表面上形成电介质层。最后在步骤9中，在电介质层上形成相对的电极。

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