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1. 发明申请

US20060141684A1 Polysilicon film, thin film transistor using the same, and method for forming the same 有权
标题翻译：多晶硅膜，使用其的薄膜晶体管及其形成方法
公开(公告)号：US20060141684A1
公开(公告)日：2006-06-29
申请号：US11314004
申请日：2005-12-22
申请人： Chia-Tien Peng , Chih-Hsiung Chang
发明人： Chia-Tien Peng , Chih-Hsiung Chang
IPC分类号： H01L21/84 , H01L21/20 , H01L21/00
CPC分类号： H01L21/02532 , H01L21/02595 , H01L21/02686 , H01L21/2026 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process to crystallize the amorphous silicon film and transform it into a poly-Si film.
摘要翻译：用于形成多晶硅膜的结晶方法描述如下。首先，在基板上形成活化层，活性层的分子结构包括碳，氢，氧和硅。然后，在活化层上形成非晶硅膜。最后，进行退火处理以使非晶硅膜结晶并将其转变为多晶硅膜。

2. 发明授权

US08034671B2 Polysilicon film, thin film transistor using the same, and method for forming the same 有权
标题翻译：多晶硅膜，使用其的薄膜晶体管及其形成方法
公开(公告)号：US08034671B2
公开(公告)日：2011-10-11
申请号：US11314004
申请日：2005-12-22
申请人： Chia-Tien Peng , Chih-Hsiung Chang
发明人： Chia-Tien Peng , Chih-Hsiung Chang
IPC分类号： H01L21/84
CPC分类号： H01L21/02532 , H01L21/02595 , H01L21/02686 , H01L21/2026 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process to crystallize the amorphous silicon film and transform it into a poly-Si film.
摘要翻译：用于形成多晶硅膜的结晶方法描述如下。首先，在基板上形成活化层，活性层的分子结构包括碳，氢，氧和硅。然后，在活化层上形成非晶硅膜。最后，进行退火处理以使非晶硅膜结晶并将其转变为多晶硅膜。

3. 发明授权

US07649207B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US07649207B2
公开(公告)日：2010-01-19
申请号：US11610541
申请日：2006-12-14
申请人： Chih-Hsiung Chang , Chien-Shen Weng , Chieh-Chou Hsu , Chia-Tien Peng , Jhen-Yue Li
发明人： Chih-Hsiung Chang , Chien-Shen Weng , Chieh-Chou Hsu , Chia-Tien Peng , Jhen-Yue Li
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/4908 , H01L29/42384
摘要： A thin film transistor is disclosed, comprising a substrate, a polysilicon layer overlying the substrate, a gate insulating layer overlying the polysilicon layer, a gate electrode, a dielectric interlayer overlying the gate electrode and gate insulating layer, and a source/drain electrode overlying the dielectric interlayer. Specifically, the gate electrode comprises a first electrode layer overlying the gate insulating layer and a second electrode layer essentially overlying an upper surface of the first electrode layer. The first and second electrode layers each has substantially the same profile with a taper angle of less than about 90 degrees.
摘要翻译：公开了一种薄膜晶体管，其包括衬底，覆盖衬底的多晶硅层，覆盖多晶硅层的栅极绝缘层，栅极电极，覆盖栅极电极和栅极绝缘层的电介质中间层，以及覆盖介电中间层。具体地，栅电极包括覆盖栅极绝缘层的第一电极层和基本上覆盖第一电极层的上表面的第二电极层。第一和第二电极层各自具有基本相同的轮廓，其锥角小于约90度。

4. 发明申请

US20070267635A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20070267635A1
公开(公告)日：2007-11-22
申请号：US11610541
申请日：2006-12-14
申请人： Chih-Hsiung Chang , Chien-Shen Weng , Chieh-Chou Hsu , Chia-Tien Peng , Jhen-Yue Li
发明人： Chih-Hsiung Chang , Chien-Shen Weng , Chieh-Chou Hsu , Chia-Tien Peng , Jhen-Yue Li
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , H01L29/42384
摘要： A thin film transistor is disclosed, comprising a substrate, a polysilicon layer overlying the substrate, a gate insulating layer overlying the polysilicon layer, a gate electrode, a dielectric interlayer overlying the gate electrode and gate insulating layer, and a source/drain electrode overlying the dielectric interlayer. Specifically, the gate electrode comprises a first electrode layer overlying the gate insulating layer and a second electrode layer essentially overlying an upper surface of the first electrode layer. The first and second electrode layers each has substantially the same profile with a taper angle of less than about 90 degrees.
摘要翻译：公开了一种薄膜晶体管，其包括衬底，覆盖衬底的多晶硅层，覆盖多晶硅层的栅极绝缘层，栅极电极，覆盖栅极电极和栅极绝缘层的电介质中间层，以及覆盖介电中间层。具体地，栅电极包括覆盖栅极绝缘层的第一电极层和基本上覆盖第一电极层的上表面的第二电极层。第一和第二电极层各自具有基本相同的轮廓，其锥角小于约90度。

5. 发明申请

US20110164195A1 DISPLAY DEVICE HAVING HEATING LAYER AND METHOD OF MAKING THE SAME 有权
标题翻译：具有加热层的显示装置及其制造方法
公开(公告)号：US20110164195A1
公开(公告)日：2011-07-07
申请号：US13050950
申请日：2011-03-18
申请人： Mao-Yi Chang , Chia-Tien Peng , Chih-Wei Chao , Chien-Sen Weng , Chao-Shun Liao
发明人： Mao-Yi Chang , Chia-Tien Peng , Chih-Wei Chao , Chien-Sen Weng , Chao-Shun Liao
IPC分类号： G02F1/136
CPC分类号： G02F1/13452 , G02F1/133382
摘要： A display device includes a first substrate, a heating layer formed on the first substrate, an insulating layer having a first opening formed on the heating layer, at least one switching device, two contact pads formed on the insulating layer, and respectively electrically connected to the scan line and the data line, a capacitor, a passivation layer covering the switching device and the capacitor, and a pixel electrode formed on the passivation layer and electrically connected to the drain of the switching device. The source of the switching device is connected to the data line. The passivation layer has a plurality of second openings exposing the contact pads.
摘要翻译：显示装置包括第一基板，形成在第一基板上的加热层，形成在加热层上的第一开口的绝缘层，至少一个开关装置，形成在绝缘层上的两个接触焊盘，分别电连接到扫描线和数据线，电容器，覆盖开关器件和电容器的钝化层，以及形成在钝化层上并电连接到开关器件的漏极的像素电极。开关器件的源极连接到数据线。钝化层具有暴露接触焊盘的多个第二开口。

6. 发明申请

US20090286336A1 MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL 有权
标题翻译：薄膜晶体管阵列和液晶显示面板的制造方法
公开(公告)号：US20090286336A1
公开(公告)日：2009-11-19
申请号：US12426301
申请日：2009-04-20
申请人： An-Thung Cho , Chia-Tien Peng , Yuan-Jun Hsu , Ching-Chieh Shih , Chien-Sen Weng , Kun-Chih Lin , Hang-Wei Tseug , Ming-Huang Chuang
发明人： An-Thung Cho , Chia-Tien Peng , Yuan-Jun Hsu , Ching-Chieh Shih , Chien-Sen Weng , Kun-Chih Lin , Hang-Wei Tseug , Ming-Huang Chuang
IPC分类号： H01L21/28
CPC分类号： H01L27/1214 , G02F1/13318 , G02F1/136213 , G02F2201/58 , G09G3/3406 , G09G3/3611 , G09G2320/0626 , G09G2320/066 , G09G2330/021 , G09G2360/144 , H01L27/127 , H01L31/103 , H01L31/105 , H04N5/58 , H04N5/66 , H04N21/42202
摘要： A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.
摘要翻译：提供了结合光传感器的制造的薄膜晶体管阵列基板的制造方法。在制造方法中，在透明导电层和用于检测环境光的金属电极之间形成感光电介质层。由于采用透明导电层作为电极，所以环境光可以通过透明导电层，并将入射光入射到感光电介质层中。因此，可以扩大光传感器的感测面积，提高感光效率。此外，光敏电介质层的另一侧可以是金属电极。金属电极可阻挡背光入射到感光电介质层中，从而降低背景噪声。还提供了采用上述薄膜晶体管阵列基板的液晶显示面板的制造方法。

7. 发明申请

US20080178794A1 Methods of forming silicon nanocrystals by laser annealing 有权
标题翻译：通过激光退火形成硅纳米晶体的方法
公开(公告)号：US20080178794A1
公开(公告)日：2008-07-31
申请号：US11698261
申请日：2007-01-25
申请人： An-Thung Cho , Chih-Wei Chao , Chia-Tien Peng , Wan-Yi Liu , Ming-Wei Sun
发明人： An-Thung Cho , Chih-Wei Chao , Chia-Tien Peng , Wan-Yi Liu , Ming-Wei Sun
IPC分类号： C03B25/00
CPC分类号： C23C16/345 , C23C16/401 , C23C16/56 , Y10S977/784 , Y10S977/809 , Y10S977/814 , Y10S977/844 , Y10S977/89 , Y10S977/891
摘要： The present invention relates to a method for forming a layered structure with silicon nanocrystals. In one embodiment, the method comprises the steps of: (i) forming a first conductive layer on a substrate, (ii) forming a silicon-rich dielectric layer on the first conductive layer, and (iii) laser-annealing at least the silicon-rich dielectric layer to induce silicon-rich aggregation to form a plurality of silicon nanocrystals in the silicon-rich dielectric layer. The silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, or a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with silicon nanocrystals in a silicon-rich dielectric layer is usable in a solar cell, a photodetector, a touch panel, a non-volatile memory device as storage node, and a liquid crystal display.
摘要翻译：本发明涉及一种用硅纳米晶形成层状结构的方法。在一个实施例中，该方法包括以下步骤：（i）在衬底上形成第一导电层，（ii）在第一导电层上形成富硅介电层，和（iii）至少激光退火硅富集的介电层以诱导富硅聚集在富硅介电层中形成多个硅纳米晶体。富硅电介质层是折射率在约1.4至2.3范围内的富硅氧化物膜之一，或折射率在约1.7至2.3范围内的富含硅的氮化物膜之一。在富硅介电层中具有硅纳米晶体的分层结构可用于太阳能电池，光电检测器，触摸面板，作为存储节点的非易失性存储器件和液晶显示器。

8. 发明授权

US08541750B2 X-ray detector and fabrication method thereof 有权
标题翻译： X射线检测器及其制造方法
公开(公告)号：US08541750B2
公开(公告)日：2013-09-24
申请号：US12553982
申请日：2009-09-03
申请人： Yu-Cheng Chen , An-Thung Cho , Ching-Sang Chuang , Chia-Tien Peng
发明人： Yu-Cheng Chen , An-Thung Cho , Ching-Sang Chuang , Chia-Tien Peng
IPC分类号： G01T1/20
CPC分类号： H01L31/085
摘要： A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost.
摘要翻译： X射线检测器的结构包括用作光敏层的富Si介电材料以增加光敏度。包含富Si介电材料的X射线检测器的制造方法需要较少的光刻蚀刻工艺，以减少薄膜层的总厚度并降低工艺步骤和成本。

9. 发明授权

US08441715B2 Electronic paper unit and method for fabricating electronic paper unit 有权
标题翻译：电子纸单元及其制造方法
公开(公告)号：US08441715B2
公开(公告)日：2013-05-14
申请号：US13310814
申请日：2011-12-05
申请人： Chan-Wei Chang , Ho-Chien Wu , Chia-Tien Peng , Chih-Jen Hu
发明人： Chan-Wei Chang , Ho-Chien Wu , Chia-Tien Peng , Chih-Jen Hu
IPC分类号： G02B26/00 , B60R1/06 , H01J9/26
CPC分类号： G02F1/167 , G02F1/133305 , G02F1/133351
摘要： An electronic paper unit including a flexible substrate, a thin film transistor layer, an electronic ink layer, a waterproof layer, and a sealant is provided. The thin film transistor layer is disposed on the flexible substrate. The electronic ink layer is disposed on a surface of the thin film transistor layer. The waterproof layer is disposed on the electronic ink layer. An edge surface of the waterproof layer and an edge surface of the electronic ink layer form a side wall where there is a first acute angle or a first obtuse angle between the side wall and the surface of the thin film transistor layer. The sealant is coated and covered on the side wall and the surface. A method for fabricating the electronic paper unit is also provided.
摘要翻译：提供了包括柔性基板，薄膜晶体管层，电子墨水层，防水层和密封剂的电子纸单元。薄膜晶体管层设置在柔性基板上。电子墨水层设置在薄膜晶体管层的表面上。防水层设置在电子墨水层上。防水层的边缘表面和电子墨水层的边缘表面形成在侧壁和薄膜晶体管层的表面之间存在第一锐角或第一钝角的侧壁。密封剂被涂覆并覆盖在侧壁和表面上。还提供了一种用于制造电子纸单元的方法。

10. 发明授权

US08310748B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08310748B2
公开(公告)日：2012-11-13
申请号：US12972556
申请日：2010-12-20
申请人： Chih-Cheng Chan , Chia-Tien Peng , Ho-Chien Wu , Wei-Chia Fang , Sheng-Wen Huang
发明人： Chih-Cheng Chan , Chia-Tien Peng , Ho-Chien Wu , Wei-Chia Fang , Sheng-Wen Huang
IPC分类号： G02B26/00
CPC分类号： G02F1/167
摘要： A display device includes a display panel, a barrier layer, and a sealant. The display panel includes a backplane and a frontplane disposed on the backplane, wherein the frontplane includes a plurality of frontplane sidewalls. The frontplane sidewalls at least include a first frontplane sidewall and a second frontplane sidewall, forming a frontplane concavity. The barrier layer includes a first barrier layer sidewall and a second barrier layer sidewall, wherein the first barrier layer sidewall and the second barrier layer sidewall form a barrier layer concavity. The barrier layer concavity corresponds to the frontplane concavity, and at least one of the barrier layer concavity and the frontplane concavity does not include a right angle. The sealant is disposed in a sealant accommodating space defined by the frontplane sidewalls of the frontplane, an inner surface of the backplane and an inner surface of the barrier layer.
摘要翻译：显示装置包括显示面板，阻挡层和密封剂。显示面板包括背板和设置在背板上的前平面，其中前平面包括多个前平面侧壁。前平面侧壁至少包括第一前平面侧壁和第二前平面侧壁，形成前平面凹面。阻挡层包括第一阻挡层侧壁和第二阻挡层侧壁，其中第一阻挡层侧壁和第二阻挡层侧壁形成阻挡层凹部。阻挡层凹面对应于前平面凹部，并且阻挡层凹部和前平面凹部中的至少一个不包括直角。密封剂设置在由前平面的前平面侧壁，背板的内表面和阻挡层的内表面限定的密封剂容纳空间中。

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