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1. 发明授权

US07368042B2 Electroplating apparatus including a real-time feedback system 有权
标题翻译：电镀设备包括实时反馈系统
公开(公告)号：US07368042B2
公开(公告)日：2008-05-06
申请号：US10905361
申请日：2004-12-30
申请人： Chia-Lin Hsu , Kun-Hsien Lin , Wen-Chieh Su
发明人： Chia-Lin Hsu , Kun-Hsien Lin , Wen-Chieh Su
IPC分类号： B23H3/02
CPC分类号： C25D17/001 , C25D17/12 , C25D21/12
摘要： An electro-chemical plating system includes an upper rotor assembly for receiving and holding a wafer; an electroplating reactor vessel for containing plating solution in which the wafer is immersed; an anode array including a plurality of concentric anode segments provided inside the electroplating reactor vessel; a power supply system including power supply subunits for controlling electrical potentials of the anode segments, respectively; and a plurality of sensor devices mounted inside the upper rotor assembly, wherein the sensor devices are substantially arranged in corresponding to the anode segments, and during operation, the plurality of sensor devices are utilized for in-situ feeding back a deposition profile to a control unit in real time.
摘要翻译：电化学电镀系统包括用于接收和保持晶片的上转子组件; 电镀反应器容器，用于容纳浸有晶片的镀液; 阳极阵列，包括设置在所述电镀反应器容器内部的多个同心阳极段; 电源系统，包括分别用于控制阳极段的电位的电源子单元; 以及安装在上转子组件内部的多个传感器装置，其中传感器装置基本上布置成对应于阳极段，并且在操作期间，多个传感器装置用于将沉积轮廓原位反馈到控制器单位实时。

2. 发明申请

US20060144698A1 ELECTROPLATING APPARATUS INCLUDING A REAL-TIME FEEDBACK SYSTEM 有权
标题翻译：包括实时反馈系统的电镀设备
公开(公告)号：US20060144698A1
公开(公告)日：2006-07-06
申请号：US10905361
申请日：2004-12-30
申请人： Chia-Lin Hsu , Kun-Hsien Lin , Wen-Chieh Su
发明人： Chia-Lin Hsu , Kun-Hsien Lin , Wen-Chieh Su
IPC分类号： B23H3/02 , C25B15/00
CPC分类号： C25D17/001 , C25D17/12 , C25D21/12
摘要： An electro-chemical plating system includes an upper rotor assembly for receiving and holding a wafer; an electroplating reactor vessel for containing plating solution in which the wafer is immersed; an anode array including a plurality of concentric anode segments provided inside the electroplating reactor vessel; a power supply system including power supply subunits for controlling electrical potentials of the anode segments, respectively; and a plurality of sensor devices mounted inside the upper rotor assembly, wherein the sensor devices are substantially arranged in corresponding to the anode segments, and during operation, the plurality of sensor devices are utilized for in-situ feeding back a deposition profile to a control unit in real time.
摘要翻译：电化学电镀系统包括用于接收和保持晶片的上转子组件; 电镀反应器容器，用于容纳浸有晶片的镀液; 阳极阵列，包括设置在所述电镀反应器容器内部的多个同心阳极段; 电源系统，包括分别用于控制阳极段的电位的电源子单元; 以及安装在上转子组件内部的多个传感器装置，其中传感器装置基本上布置成对应于阳极段，并且在操作期间，多个传感器装置用于将沉积轮廓原位反馈到控制器单位实时。

3. 发明申请

US20070077751A1 METHOD OF RESTORING LOW-K MATERIAL OR POROUS LOW-K LAYER 审中-公开
标题翻译：恢复低K材料或多孔低K层的方法
公开(公告)号：US20070077751A1
公开(公告)日：2007-04-05
申请号：US11163051
申请日：2005-10-03
申请人： Mei-Ling Chen , Jei-Ming Chen , Kuo-Chih Lai , Wen-Chieh Su
发明人： Mei-Ling Chen , Jei-Ming Chen , Kuo-Chih Lai , Wen-Chieh Su
IPC分类号： H01L21/4763
CPC分类号： H01L21/76826 , H01L21/02107 , H01L21/02203 , H01L21/0234 , H01L21/3105 , H01L21/31058 , H01L21/31695
摘要： A method of restoring a low-k material is described, applied to a substrate with a low-k material thereon, wherein the substrate has been subject to a previous process that raised the k-value of the low-k material. The method includes performing a plasma treatment to the low-k material to decrease the k-value thereof.
摘要翻译：描述了一种将低k材料恢复的方法应用于其上具有低k材料的衬底，其中衬底已经经历提高低k材料的k值的先前工艺。该方法包括对低k材料进行等离子体处理以降低其k值。

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