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1. 发明授权

US07973331B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US07973331B2
公开(公告)日：2011-07-05
申请号：US12318552
申请日：2008-12-31
申请人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
发明人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L24/24 , H01L24/82 , H01L33/20 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/12041 , H01L2924/00
摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.
摘要翻译：本发明涉及一种发光装置。本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少基板的第一倾斜侧壁和电连接图案化的半导体结构。

2. 发明申请

US20110254046A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110254046A1
公开(公告)日：2011-10-20
申请号：US13174183
申请日：2011-06-30
申请人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
发明人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
IPC分类号： H01L33/62
CPC分类号： H01L33/385 , H01L24/24 , H01L24/82 , H01L33/20 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/12041 , H01L2924/00
摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.
摘要翻译：本发明涉及一种发光装置。本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少基板的第一倾斜侧壁和电连接图案化的半导体结构。

3. 发明授权

US08513699B2 Light-emitting device 有权
公开(公告)号：US08513699B2
公开(公告)日：2013-08-20
申请号：US13174183
申请日：2011-06-30
申请人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
发明人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
IPC分类号： H01L33/62
CPC分类号： H01L33/385 , H01L24/24 , H01L24/82 , H01L33/20 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/12041 , H01L2924/00
摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.

4. 发明授权

US08882290B2 Light-mixing type light-emitting apparatus 有权
标题翻译：光混合型发光装置
公开(公告)号：US08882290B2
公开(公告)日：2014-11-11
申请号：US11798521
申请日：2007-05-15
申请人： Min-Hsun Hsieh , Chia-Liang Hsu , Chien-Fu Huang , Chih-Chiang Lu , Chun-Yi Wu
发明人： Min-Hsun Hsieh , Chia-Liang Hsu , Chien-Fu Huang , Chih-Chiang Lu , Chun-Yi Wu
IPC分类号： F21K2/00 , H01L25/075 , F21K99/00
CPC分类号： H01L25/0753 , F21K9/00 , F21K9/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A light-mixing type light-emitting apparatus comprises a plurality of light-emitting diodes (LEDs) formed on a transparent carrier, wherein each of the LEDs with a transparent substrate emits light of a distinct color when driven, and the light beams generated from the LEDs are mixed to form a specific color. The transparent carrier setting forth in the present invention provides a mixing zone underlying the plurality of LEDs for the light beams to mix uniformly so as to improve the light-mixing efficiency of the light-emitting apparatus and shorten the mixing distance.
摘要翻译：光混合型发光装置包括形成在透明载体上的多个发光二极管（LED），其中具有透明基板的每个LED在被驱动时发射不同颜色的光，并且由 LED被混合以形成特定的颜色。在本发明中提出的透明载体提供了用于光束的多个LED下面的混合区域，以便均匀地混合，以便提高发光装置的光混合效率并缩短混合距离。

5. 发明申请

US20090173963A1 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US20090173963A1
公开(公告)日：2009-07-09
申请号：US12318552
申请日：2008-12-31
申请人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
发明人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L24/24 , H01L24/82 , H01L33/20 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/12041 , H01L2924/00
摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.
摘要翻译：本发明涉及一种发光装置。本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少基板的第一倾斜侧壁和电连接图案化的半导体结构。

6. 发明申请

US20120256164A1 OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：光电器件及其制造方法
公开(公告)号：US20120256164A1
公开(公告)日：2012-10-11
申请号：US13528059
申请日：2012-06-20
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
IPC分类号： H01L33/06
CPC分类号： H01L33/46 , H01L33/22 , H01L33/42 , H01L33/44
摘要： An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.
摘要翻译：光电器件具有衬底和衬底上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度。第二窗口层具有第二薄层电阻，第二厚度和第二杂质浓度。半导体系统在第一窗口层和第二窗口层之间。第二窗口层具有与半导体系统不同的半导体材料，第二薄层电阻大于第一薄层电阻。提供一种制造方法，其具有以下步骤：提供衬底，在衬底上形成半导体系统，并在半导体系统上形成窗口层。窗口层具有与半导体系统不同的半导体材料。选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。

7. 发明授权

US08845143B2 Photoelectronic device 有权
标题翻译：光电器件
公开(公告)号：US08845143B2
公开(公告)日：2014-09-30
申请号：US12289478
申请日：2008-10-29
申请人： Chia-Liang Hsu , Chien-Fu Huang , Chun-Yi Wu
发明人： Chia-Liang Hsu , Chien-Fu Huang , Chun-Yi Wu
IPC分类号： F21V5/00 , H01L33/54 , H01L33/48
CPC分类号： H01L33/54 , H01L33/483 , Y10S362/80
摘要： A photoelectronic device including a carrier, a light-emitting component mounted on the carrier; a patterned structure deposited on the carrier and around the light-emitting component; and a transparent sealing structure formed above the light-emitting component. The patterned structure mentioned above can cause the transparent sealing structure to be focused above the light-emitting component, and restrained in the patterned structure. The transparent sealing structure with predetermined proportional configuration is obtained by controlling the quantity of the transparent sealing structure. Therefore light efficiency of the photoelectronic device can be greatly improved.
摘要翻译：一种光电子器件，包括载体，安装在载体上的发光部件; 沉积在载体上并围绕发光部件的图案化结构; 以及形成在发光部件上方的透明密封结构。上述图案化结构可以使透明密封结构聚焦在发光部件的上方，并被限制在图案化结构中。通过控制透明密封结构的数量来获得具有预定比例构型的透明密封结构。因此，可以大大提高光电子器件的光效率。

8. 发明授权

US08474233B2 Optoelectronic device and the manufacturing method thereof 有权
标题翻译：光电子器件及其制造方法
公开(公告)号：US08474233B2
公开(公告)日：2013-07-02
申请号：US13528059
申请日：2012-06-20
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
IPC分类号： H01L33/06
CPC分类号： H01L33/46 , H01L33/22 , H01L33/42 , H01L33/44
摘要： An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.
摘要翻译：光电器件具有衬底和衬底上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度。第二窗口层具有第二薄层电阻，第二厚度和第二杂质浓度。半导体系统在第一窗口层和第二窗口层之间。第二窗口层具有与半导体系统不同的半导体材料，第二薄层电阻大于第一薄层电阻。提供一种制造方法，其具有以下步骤：提供衬底，在衬底上形成半导体系统，并在半导体系统上形成窗口层。窗口层具有与半导体系统不同的半导体材料。选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。

9. 发明申请

US20070263384A1 Light-mixing type light-emitting apparatus 有权
标题翻译：光混合型发光装置
公开(公告)号：US20070263384A1
公开(公告)日：2007-11-15
申请号：US11798521
申请日：2007-05-15
申请人： Min-Hsun Hsieh , Chai-Liang Hsu , Chien-Fu Huang , Chih-Chiang Lu , Chun-Yi Wu
发明人： Min-Hsun Hsieh , Chai-Liang Hsu , Chien-Fu Huang , Chih-Chiang Lu , Chun-Yi Wu
IPC分类号： F21V9/00
CPC分类号： H01L25/0753 , F21K9/00 , F21K9/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A light-mixing type light-emitting apparatus comprises a plurality of light-emitting diodes (LEDs) formed on a transparent carrier, wherein each of the LEDs with a transparent substrate emits light of a distinct color when driven, and the light beams generated from the LEDs are mixed to form a specific color. The transparent carrier setting forth in the present invention provides a mixing zone underlying the plurality of LEDs for the light beams to mix uniformly so as to improve the light-mixing efficiency of the light-emitting apparatus and shorten the mixing distance.
摘要翻译：光混合型发光装置包括形成在透明载体上的多个发光二极管（LED），其中具有透明基板的每个LED在被驱动时发射不同颜色的光，并且由 LED被混合以形成特定的颜色。在本发明中提出的透明载体提供了用于光束的多个LED下面的混合区域，以便均匀地混合，以便提高发光装置的光混合效率并缩短混合距离。

10. 发明授权

US08207550B2 Optoelectronic device and the manufacturing method thereof 有权
标题翻译：光电子器件及其制造方法
公开(公告)号：US08207550B2
公开(公告)日：2012-06-26
申请号：US13021307
申请日：2011-02-04
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
IPC分类号： H01L33/58 , H01L33/60
CPC分类号： H01L33/46 , H01L33/22 , H01L33/42 , H01L33/44
摘要： One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure. The method comprises the steps of providing a substrate; forming a semiconductor system on the substrate; forming a window layer on the semiconductor system, wherein the window layer comprises a semiconductor material different from the semiconductor system; selectively removing the window layer thereby forming a width difference between the window layer and the semiconductor system, and the width difference is greater than 1 micron.
摘要翻译：本公开的一个方面提供了一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。本公开的一个方面提供了根据本公开的用于制造光电子器件的方法。该方法包括提供基板的步骤; 在所述基板上形成半导体系统; 在所述半导体系统上形成窗口层，其中所述窗口层包括不同于所述半导体系统的半导体材料; 选择性地去除窗口层，从而形成窗口层和半导体系统之间的宽度差，并且宽度差异大于1微米。

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