专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08946737B2 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08946737B2
公开(公告)日：2015-02-03
申请号：US13570214
申请日：2012-08-08
申请人： Ya-Wen Lin , Po-Min Tu , Shih-Cheng Huang , Chia-Hung Huang , Shun-Kuei Yang
发明人： Ya-Wen Lin , Po-Min Tu , Shih-Cheng Huang , Chia-Hung Huang , Shun-Kuei Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/007
摘要： A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 μm to 2.5 μm.
摘要翻译：发光二极管（LED）包括衬底，缓冲层和外延结构。衬底具有形成在其上的图案化结构的第一表面。图案形成结构包括多个突起。缓冲层布置在基板的第一表面上。外延结构布置在缓冲层上。外延结构包括顺序地布置在缓冲层上的第一半导体层，有源层和第二半导体层。第一半导体层具有附着到有源层的第二表面。每个突起的峰值与第一半导体层的第二表面之间的距离为0.5μm至2.5μm。

2. 发明授权

US08754438B2 Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US08754438B2
公开(公告)日：2014-06-17
申请号：US13400097
申请日：2012-02-19
申请人： Ya-Wen Lin , Shih-Cheng Huang , Po-Min Tu , Chia-Hung Huang , Shun-Kuei Yang
发明人： Ya-Wen Lin , Shih-Cheng Huang , Po-Min Tu , Chia-Hung Huang , Shun-Kuei Yang
IPC分类号： H01L33/62
CPC分类号： H01L33/20 , H01L33/0075 , H01L33/145 , H01L33/38 , H01L33/382
摘要： An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.
摘要翻译： LED包括衬底，缓冲层，外延层和导电层。外延层包括第一N型外延层，第二N型外延层和夹在第一和第二N型外延层之间的图案化沟槽的阻挡层。第一和第二N型外延层经由图案化的沟槽彼此接触。因此，LED具有均匀的电流分布和更大的发光面积。还提供了一种用于LED的制造方法。

3. 发明授权

US08604503B2 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08604503B2
公开(公告)日：2013-12-10
申请号：US13600137
申请日：2012-08-30
申请人： Chia-Hung Huang , Shih-Cheng Huang , Po-Min Tu , Ya-Wen Lin , Shun-Kuei Yang
发明人： Chia-Hung Huang , Shih-Cheng Huang , Po-Min Tu , Ya-Wen Lin , Shun-Kuei Yang
IPC分类号： H01L33/22
CPC分类号： H01L33/58 , H01L33/10 , H01L33/22 , H01L33/32
摘要： A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.
摘要翻译：发光二极管包括衬底，衬底上的过渡层和过渡层上的外延层。过渡层包括具有平坦顶表面的平坦区域和具有粗糙顶表面的图案区域。 AlN材料包括由多个球体组成的第一部分和由多个球团组成的第二部分。球体在平坦区域和图案化区域处于过渡层的顶表面上。 s条位于图案区域中限定的凹槽中。在s条和外延层的底表面之间形成气隙。 AlN材料的球体和块状物有助于将由外延层产生的光反射到LED的光输出表面。

4. 发明授权

US08916400B2 Manufacturing method for an LED comprising a nitrided AlN reflecting layer 有权
标题翻译：包括氮化AlN反射层的LED的制造方法
公开(公告)号：US08916400B2
公开(公告)日：2014-12-23
申请号：US13457431
申请日：2012-04-26
申请人： Chia-Hung Huang , Shih-Cheng Huang , Po-Min Tu , Shun-Kuei Yang , Ya-Wen Lin
发明人： Chia-Hung Huang , Shih-Cheng Huang , Po-Min Tu , Shun-Kuei Yang , Ya-Wen Lin
IPC分类号： H01L33/10 , H01L33/00 , H01L21/768 , H01L33/22
CPC分类号： H01L33/007 , H01L21/76856 , H01L33/0075 , H01L33/10 , H01L33/22
摘要： A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.
摘要翻译：发光二极管（LED）包括依次设置在基板上的基板，外延层和氮化铝（AlN）层。 AlN层包括彼此分离的多个叠层，其中外延层完全覆盖AlN层的多个叠层。具有多个堆叠的AlN层通过LED的顶部平面反射向上反射由外延层产生的向上的光并且朝向衬底向下反射到LED的外部。还公开了一种用于形成LED的方法。

5. 发明授权

US08394653B2 Method for fabricating semiconductor lighting chip 失效
标题翻译：制造半导体照明芯片的方法
公开(公告)号：US08394653B2
公开(公告)日：2013-03-12
申请号：US13216248
申请日：2011-08-24
申请人： Po-Min Tu , Shih-Cheng Huang , Ya-Wen Lin , Chia-Hung Huang , Shun-Kuei Yang
发明人： Po-Min Tu , Shih-Cheng Huang , Ya-Wen Lin , Chia-Hung Huang , Shun-Kuei Yang
IPC分类号： H01L21/00
CPC分类号： H01L33/24 , H01L33/005
摘要： A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial regions; forming a first semiconductor layer on the epitaxial regions; forming a second block layer partly covering the first semiconductor layer; forming a lighting structure on an uncovered portion of the first semiconductor layer; removing the first and the second block layers thereby defining clearances at the bottom surfaces of the first semiconductor layer and the lighting structure; and permeating etching solution into the first and second clearances to etch the first semiconductor layer and the lighting structure, thereby to form each of the first semiconductor layer and the lighting structure with an inverted frustum-shaped structure.
摘要翻译：一种制造半导体照明芯片的方法包括以下步骤：向衬底提供将衬底的上表面分成多个外延区域的第一块层; 在所述外延区上形成第一半导体层; 形成部分地覆盖所述第一半导体层的第二块层; 在所述第一半导体层的未覆盖部分上形成照明结构; 去除第一和第二块层，从而在第一半导体层和照明结构的底表面处限定间隙; 并将渗透的蚀刻溶液浸入第一和第二间隙中以蚀刻第一半导体层和照明结构，由此形成具有倒立的截头锥形结构的第一半导体层和照明结构中的每一个。

6. 发明授权

US08349742B2 Gallium nitride-based semiconductor device and method for manufacturing the same 失效
标题翻译：氮化镓基半导体器件及其制造方法
公开(公告)号：US08349742B2
公开(公告)日：2013-01-08
申请号：US13013825
申请日：2011-01-26
申请人： Po-Min Tu , Shih-Cheng Huang , Shun-Kuei Yang , Chia-Hung Huang
发明人： Po-Min Tu , Shih-Cheng Huang , Shun-Kuei Yang , Chia-Hung Huang
IPC分类号： H01L21/00
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/0243 , H01L21/0254 , H01L21/02658 , H01L29/16
摘要： A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate.
摘要翻译：氮化镓系半导体器件包括复合衬底和氮化镓层。复合衬底包括硅衬底和填料。硅衬底包括第一表面和与第一表面相对的第二表面，并且第一表面在其中限定多个凹槽。将填料填充到硅衬底的第一表面上的槽数中。填料的热膨胀系数大于硅衬底的热膨胀系数。氮化镓层形成在硅衬底的第二表面上。

7. 发明授权

US08501582B2 Semiconductor structure having low thermal stress and method for manufacturing thereof 有权
标题翻译：具有低热应力的半导体结构及其制造方法
公开(公告)号：US08501582B2
公开(公告)日：2013-08-06
申请号：US12975235
申请日：2010-12-21
申请人： Shih-Cheng Huang , Po-Min Tu , Shun-Kuei Yang , Chia-Hung Huang
发明人： Shih-Cheng Huang , Po-Min Tu , Shun-Kuei Yang , Chia-Hung Huang
IPC分类号： H01L21/76
CPC分类号： H01L29/06 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02614 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/12 , H01L33/20
摘要： A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A method for manufacturing the semiconductor structure is also disclosed.
摘要翻译：半导体结构包括Si衬底，支撑层和形成在衬底上的阻挡层和形成在支撑层上的外延层。支撑层在其中限定多个凹槽以接收阻挡层。外延层从支撑层生长。在外延层中和阻挡层上限定多个槽。外延层包括N型半导体层，发光层和P型半导体层。还公开了半导体结构的制造方法。

8. 发明授权

US08461619B2 Light emitting diode chip and method of manufacturing the same 失效
标题翻译：发光二极管芯片及其制造方法
公开(公告)号：US08461619B2
公开(公告)日：2013-06-11
申请号：US13397688
申请日：2012-02-16
申请人： Chia-Hung Huang , Shih-Cheng Huang , Po-Min Tu , Shun-Kuei Yang
发明人： Chia-Hung Huang , Shih-Cheng Huang , Po-Min Tu , Shun-Kuei Yang
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/14 , H01L33/20 , H01L33/42 , H01L2933/0016
摘要： An LED chip includes a substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first electrode and a second electrode formed on the substrate in sequence. A surface of the first type semiconductor layer away from the substrate comprises an exposed first area and a second area covered by the light-emitting layer. The first electrode is formed on the exposed first area of the substrate. A number of recesses are defined in the second area of the surface of the first type semiconductor layer. The recesses are spaced apart from each other and arranged in sequence in a direction away from the first electrode; depths of the recesses gradually decrease following an increase of a distance between the recesses and the first electrode. The second electrode is formed on the second type semiconductor layer.
摘要翻译： LED芯片依次包括基板，第一类型半导体层，发光层，第二类型半导体层，第一电极和第二电极。离开衬底的第一类型半导体层的表面包括暴露的第一区域和被发光层覆盖的第二区域。第一电极形成在基板的暴露的第一区域上。在第一类型半导体层的表面的第二区域中限定多个凹部。凹部彼此间隔开并且沿远离第一电极的方向依次布置; 随着凹部和第一电极之间的距离的增加，凹部的深度逐渐减小。第二电极形成在第二类型半导体层上。

9. 发明授权

US08450749B2 Light emitting element and manufacturing method thereof 失效
标题翻译：发光元件及其制造方法
公开(公告)号：US08450749B2
公开(公告)日：2013-05-28
申请号：US12986186
申请日：2011-01-07
申请人： Po-Min Tu , Shih-Cheng Huang , Shun-Kuei Yang , Chia-Hung Huang
发明人： Po-Min Tu , Shih-Cheng Huang , Shun-Kuei Yang , Chia-Hung Huang
IPC分类号： H01L33/30 , H01L33/44
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/02661 , H01L33/007
摘要： A light emitting element includes a substrate, a GaN layer formed on the substrate, a first low refractive index semiconductor layer formed on the GaN layer, and a lighting structure having a high refractive index formed on the first low refractive index semiconductor layer. A second low refractive index semiconductor layer is embedded in the first low refractive index semiconductor layer. The first low refractive index semiconductor layer and the GaN layer exhibit a lattice mismatch therebetween.
摘要翻译：发光元件包括衬底，形成在衬底上的GaN层，形成在GaN层上的第一低折射率半导体层和形成在第一低折射率半导体层上的具有高折射率的点亮结构。第二低折射率半导体层嵌入在第一低折射率半导体层中。第一低折射率半导体层和GaN层之间呈现晶格失配。

10. 发明授权

US08536590B2 Light emitting element package 失效
标题翻译：发光元件封装
公开(公告)号：US08536590B2
公开(公告)日：2013-09-17
申请号：US13113082
申请日：2011-05-23
申请人： Shih-Cheng Huang , Po-Min Tu , Shun-Kuei Yang , Chia-Hung Huang
发明人： Shih-Cheng Huang , Po-Min Tu , Shun-Kuei Yang , Chia-Hung Huang
IPC分类号： H01L29/18
CPC分类号： H01L25/0753 , H01L33/62 , H01L2224/16
摘要： A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the at least two light emitting element modules includes a plurality of light emitting elements. Each light emitting element of the at least two light emitting element modules is electrically coupled to neighboring light emitting element in serial through the solder pads. The at least two light emitting element modules are reversely arranged. The encapsulation member is configured to encapsulate the at least two light emitting element modules on the substrate.
摘要翻译：发光元件封装包括衬底，至少两个发光元件模块和封装构件。基板包括电路层。电路层包括多个焊盘。至少两个发光元件模块安装在基板上。所述至少两个发光元件模块中的每一个包括多个发光元件。所述至少两个发光元件模块的每个发光元件通过所述焊盘电连接到相邻的发光元件。至少两个发光元件模块相反地布置。封装构件被构造成将至少两个发光元件模块封装在基板上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式