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1. 发明授权

US08809109B2 Method and structure for eliminating edge peeling in thin-film photovoltaic absorber materials 有权
标题翻译：消除薄膜光伏吸收材料边缘剥离的方法和结构
公开(公告)号：US08809109B2
公开(公告)日：2014-08-19
申请号：US13476594
申请日：2012-05-21
申请人： Laila Dounas , Robert D. Wieting , Chester A. Farris, III
发明人： Laila Dounas , Robert D. Wieting , Chester A. Farris, III
IPC分类号： H01L31/0248
CPC分类号： H01L31/0248 , H01L31/0236 , H01L31/03923 , H01L31/0463 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A method for manufacturing a thin-film photovoltaic device includes providing a glass substrate contained sodium species. The glass substrate comprising a surface region and a peripheral edge region surround the surface region. The method further includes forming a barrier material overlying the surface region and partially overlying the peripheral edge region and forming a conductor material overlying the barrier material. Additionally, the method includes forming at least a first trench in a vicinity of the peripheral edge region to remove substantially the conductor material therein and forming precursor materials overlying the patterned conductor material. Furthermore, the method includes thermally treating the precursor materials to transform the precursor materials into a film of photovoltaic absorber. The first trench is configured to maintain the film of photovoltaic absorber substantially free from peeling off the conductor material.
摘要翻译：制造薄膜光伏器件的方法包括提供含有钠物质的玻璃基片。包括表面区域和周边边缘区域的玻璃基板围绕表面区域。所述方法还包括形成覆盖在所述表面区域上并且部分地覆盖所述周边边缘区域并形成覆盖所述阻挡材料的导体材料的阻挡材料。此外，该方法包括在周边边缘区域附近形成至少第一沟槽，以基本上除去其中的导体材料，并形成覆盖图案化导体材料的前体材料。此外，该方法包括热处理前体材料以将前体材料转化为光伏吸收剂的膜。第一沟槽被配置为保持光伏吸收器的膜基本上不会剥离导体材料。

2. 发明申请

US20130174900A1 NANOWIRE ENHANCED TRANSPARENT CONDUCTIVE OXIDE FOR THIN FILM PHOTOVOLTAIC DEVICES 审中-公开
标题翻译：用于薄膜光伏器件的纳米增强透明导电氧化物
公开(公告)号：US20130174900A1
公开(公告)日：2013-07-11
申请号：US13543462
申请日：2012-07-06
申请人： Chester A. Farris, III , Robert D. Wieting , Ashish Tandon
发明人： Chester A. Farris, III , Robert D. Wieting , Ashish Tandon
IPC分类号： H01L31/18 , H01L31/0224
CPC分类号： H01L31/1884 , B82Y10/00 , B82Y99/00 , H01L31/022466 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A thin-film photovoltaic devices includes transparent conductive oxide which has embedded within it nanowires at less than 2% nominal shadowing area. The nanowires enhance the electrical conductivity of the conductive oxide.
摘要翻译：薄膜光伏器件包括透明导电氧化物，其内嵌有小于2％的标称阴影区域的纳米线。纳米线增强导电氧化物的导电性。

3. 外观设计

USD679650S1 Multi-module utility photovoltaic apparatus 有权
标题翻译：多模光伏发电设备
公开(公告)号：USD679650S1
公开(公告)日：2013-04-09
申请号：US29362514
申请日：2010-05-26
申请人： Chester A. Farris, III , Robert D. Wieting
设计人： Chester A. Farris, III , Robert D. Wieting

4. 发明授权

US08372684B1 Method and system for selenization in fabricating CIGS/CIS solar cells 失效
标题翻译：制造CIGS / CIS太阳能电池的硒化方法和系统
公开(公告)号：US08372684B1
公开(公告)日：2013-02-12
申请号：US12776189
申请日：2010-05-07
申请人： Robert D. Wieting , Steven Aragon , Chester A. Farris, III
发明人： Robert D. Wieting , Steven Aragon , Chester A. Farris, III
IPC分类号： H01L21/00
CPC分类号： H01L31/0322 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L31/03926 , H01L31/188 , Y02E10/541 , Y02P70/521
摘要： The method and system for selenization in fabricating CIS and/or CIGS based thin film solar cell overlaying cylindrical glass substrates. The method includes providing a substrate, forming an electrode layer over the substrate and depositing a precursor layer of copper, indium, and/or gallium over the electrode layer. The method also includes disposing the substrate vertically in a furnace. Then a gas including a hydrogen species, a selenium species and a carrier gas are introduced into the furnace and heated to between about 350° C. and about 450° C. to at least initiate formation of a copper indium diselenide film from the precursor layer.
摘要翻译：用于制造基于CIS和/或CIGS的薄膜太阳能电池覆盖圆柱形玻璃基板的硒化方法和系统。该方法包括提供衬底，在衬底上形成电极层，并在电极层上沉积铜，铟和/或镓的前体层。该方法还包括将基板垂直放置在炉中。然后将包括氢物质，硒物质和载气的气体引入炉中并加热至约350℃至约450℃，以至少从起始层产生铜铟二硒化物膜的形成。

5. 发明授权

US08241943B1 Sodium doping method and system for shaped CIGS/CIS based thin film solar cells 失效
标题翻译：用于成形CIGS / CIS的薄膜太阳能电池的钠掺杂方法和系统
公开(公告)号：US08241943B1
公开(公告)日：2012-08-14
申请号：US12774675
申请日：2010-05-05
申请人： Robert D. Wieting , Steven Aragon , Chester A. Farris, III
发明人： Robert D. Wieting , Steven Aragon , Chester A. Farris, III
IPC分类号： H01L21/00 , H01L31/00
CPC分类号： H01L31/0322 , H01L31/03923 , H01L31/0749 , Y02E10/541
摘要： A method of sodium doping in fabricating CIGS/CIS based thin film solar cells includes providing a shaped substrate member. The method includes forming a barrier layer over the surface region followed by a first electrode layer, and then a sodium bearing layer. A precursor layer of copper, indium, and/or gallium materials having an atomic ratio of copper/group III species no greater than 1.0 is deposited over the sodium bearing layer. The method further includes transferring the shaped substrate member to a second chamber and subjecting it to a thermal treatment process within an environment comprising gas-phase selenium species, followed by an environment comprising gas-phase sulfur species with the selenium species being substantially removed to form an absorber layer.
摘要翻译：在制造CIGS / CIS的薄膜太阳能电池中的钠掺杂的方法包括提供成形的基板部件。该方法包括在表面区域之后形成阻挡层，随后是第一电极层，然后形成含钠层。具有不大于1.0的铜/ III族原子比的铜，铟和/或镓材料的前体层沉积在承载钠层上。该方法还包括将成形的基底构件转移到第二腔室并使其在包括气相硒物质的环境中进行热处理过程，随后是包括气相硫物质的环境，其中硒物质被基本上除去以形成吸收层。

6. 发明申请

US20110259413A1 Hazy Zinc Oxide Film for Shaped CIGS/CIS Solar Cells 审中-公开
标题翻译：用于形状CIGS / CIS太阳能电池的朦胧氧化锌膜
公开(公告)号：US20110259413A1
公开(公告)日：2011-10-27
申请号：US13087082
申请日：2011-04-14
申请人： Robert D. Wieting , Chester A. Farris, III
发明人： Robert D. Wieting , Chester A. Farris, III
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L21/67103 , C03C17/34 , C03C17/3678 , C03C2217/944 , C03C2218/152 , C23C16/407 , C23C16/45565 , C23C16/458 , C23C16/46 , H01L21/67109 , H01L31/022483 , H01L31/0322 , H01L31/035281 , H01L31/1884 , Y02E10/541
摘要： A method for fabricating a shaped thin film photovoltaic device includes providing a length of tubular glass substrate having an inner diameter, an outer diameter, a circumferential outer surface region covered by an absorber layer and a window buffer layer overlying the absorber layer. The substrate is placed in a vacuum of between about 0.1 Torr to about 0.02 Torr and a mixture of reactant species derived from diethylzinc species, water species, and a carrier gas are introduced, as well as a diborane species. The substrate is heated to form a zinc oxide film with a thickness of 0.75-3 μm, a haziness of at least 5%, and an electrical resistivity of less than about 2.5 milliohm-cm.
摘要翻译：一种用于制造成形薄膜光伏器件的方法，包括提供一段长度的管状玻璃基板，其具有内部直径，外径，被吸收层覆盖的周向外表面区域和覆盖在吸收层上的窗口缓冲层。将基底置于约0.1托至约0.02托的真空中，并引入衍生自二乙基锌物质，水种和载气的反应物物质的混合物，以及乙硼烷物质。将基板加热形成厚度为0.75-3μm，雾度至少为5％，电阻率小于约2.5毫欧姆 - 厘米的氧化锌膜。

7. 发明申请

US20130306150A1 METHOD AND STRUCTURE FOR ELIMINATING EDGE PEELING IN THIN-FILM PHOTOVOLTAIC ABSORBER MATERIALS 有权
标题翻译：用于消除薄膜光伏吸收材料边缘剥离的方法和结构
公开(公告)号：US20130306150A1
公开(公告)日：2013-11-21
申请号：US13476594
申请日：2012-05-21
申请人： Laila Dounas , Robert D. Wieting , Chester A. Farris, III
发明人： Laila Dounas , Robert D. Wieting , Chester A. Farris, III
IPC分类号： H01L31/0248 , H01L31/18
CPC分类号： H01L31/0248 , H01L31/0236 , H01L31/03923 , H01L31/0463 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A method for manufacturing a thin-film photovoltaic device includes providing a glass substrate contained sodium species. The glass substrate comprising a surface region and a peripheral edge region surround the surface region. The method further includes forming a barrier material overlying the surface region and partially overlying the peripheral edge region and forming a conductor material overlying the barrier material. Additionally, the method includes forming at least a first trench in a vicinity of the peripheral edge region to remove substantially the conductor material therein and forming precursor materials overlying the patterned conductor material. Furthermore, the method includes thermally treating the precursor materials to transform the precursor materials into a film of photovoltaic absorber. The first trench is configured to maintain the film of photovoltaic absorber substantially free from peeling off the conductor material.
摘要翻译：制造薄膜光伏器件的方法包括提供含有钠物质的玻璃基片。包括表面区域和周边边缘区域的玻璃基板围绕表面区域。所述方法还包括形成覆盖在所述表面区域上并且部分地覆盖所述周边边缘区域并形成覆盖所述阻挡材料的导体材料的阻挡材料。此外，该方法包括在周边边缘区域附近形成至少第一沟槽，以基本上除去其中的导体材料，并形成覆盖图案化导体材料的前体材料。此外，该方法包括热处理前体材料以将前体材料转化为光伏吸收剂的膜。第一沟槽被配置为保持光伏吸收器的膜基本上不会剥离导体材料。

8. 发明授权

US08859880B2 Method and structure for tiling industrial thin-film solar devices 有权
标题翻译：平铺工业薄膜太阳能装置的方法和结构
公开(公告)号：US08859880B2
公开(公告)日：2014-10-14
申请号：US13006743
申请日：2011-01-14
申请人： Robert D. Wieting
发明人： Robert D. Wieting
IPC分类号： H01L31/042 , H01L31/0749 , H01L31/048 , H01L31/02 , H01L31/05
CPC分类号： H01L31/048 , H01L31/0201 , H01L31/02013 , H01L31/0504 , H01L31/0749 , Y02E10/50 , Y02E10/541
摘要： A method for integrating photovoltaic module includes providing a cover plate having a first surface and a second surface opposed to the first surface and supplying photovoltaic devices respectively formed on substrates. The photovoltaic devices include photovoltaic cells electrically coupled to each other, and each cell is characterized by a thin-film photovoltaic layer sandwiched between a first electrode material and a second electrode material. The first electrode material overlies the substrate and the second electrode material overlies the thin-film photovoltaic layer. The method further includes disposing the solar devices side by side to laminate with the cover plate by means of a first organic material filled between the second electrode material and the second surface. Each of the solar devices has a peripheral edge region being sealed by a second organic material. The method further includes electrically coupling the solar devices to each other.
摘要翻译：一种用于集成光伏模块的方法包括提供具有第一表面和与第一表面相对的第二表面的盖板，并提供分别形成在基板上的光电器件。光伏器件包括彼此电耦合的光伏电池，并且每个电池的特征在于夹在第一电极材料和第二电极材料之间的薄膜光伏层。第一电极材料覆盖在基板上，第二电极材料覆盖在薄膜光伏层上。该方法还包括通过填充在第二电极材料和第二表面之间的第一有机材料并排设置太阳能装置与盖板层压。每个太阳能装置具有由第二有机材料密封的周边边缘区域。该方法还包括将太阳能装置彼此电耦合。

9. 发明授权

US08425739B1 In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials 失效
标题翻译：在室内钠掺杂工艺和系统中用于大规模的基于cigs的薄膜光伏材料
公开(公告)号：US08425739B1
公开(公告)日：2013-04-23
申请号：US12565749
申请日：2009-09-23
申请人： Robert D. Wieting
发明人： Robert D. Wieting
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： H01L31/022425 , H01L21/02491 , H01L21/02568 , H01L21/02579 , H01L21/02614 , H01L21/02631 , H01L31/0322 , H01L31/03923 , Y02E10/541
摘要： A method of processing a photovoltaic materials using a sputtering process including providing at least one transparent substrate having an overlying first electrode layer. The method further including forming an overlying copper and gallium layer using a first sputtering process within a first chamber from a first target including a copper species and a gallium species. Additionally, the method includes forming an indium layer overlying the copper and the gallium layer using a second sputtering process within the first chamber from a second target including an indium species. The method further includes forming a sodium bearing layer overlying the indium layer using a third sputtering process within the first chamber, thereby forming a composite film including the copper and gallium layer, the indium layer, and the sodium bearing layer. Furthermore, the method includes subjecting the composite film to at least a thermal treatment process to form a chalcopyrite absorber layer comprising copper, indium, gallium, and sodium therein.
摘要翻译：一种使用溅射工艺处理光伏材料的方法，包括提供至少一个具有覆盖的第一电极层的透明衬底。该方法还包括使用第一溅射工艺在第一室内从包括铜种类和镓物质的第一靶标形成覆盖铜和镓层。此外，该方法包括使用第二腔室内的第二溅射工艺从包括铟物质的第二靶子形成覆盖铜和镓层的铟层。该方法还包括在第一室内使用第三溅射工艺形成覆盖铟层的含钠层，从而形成包括铜和镓层，铟层和承载钠层的复合膜。此外，该方法包括使复合膜至少进行热处理工艺以形成其中包含铜，铟，镓和钠的黄铜矿吸收层。

10. 发明授权

US08398772B1 Method and structure for processing thin film PV cells with improved temperature uniformity 失效
标题翻译：用于处理具有改善的温度均匀性的薄膜PV电池的方法和结构
公开(公告)号：US08398772B1
公开(公告)日：2013-03-19
申请号：US12858342
申请日：2010-08-17
申请人： Ashish Tandon , Robert D. Wieting , Jurg Schmizberger , Paul Alexander
发明人： Ashish Tandon , Robert D. Wieting , Jurg Schmizberger , Paul Alexander
IPC分类号： C23C16/00 , C23C16/455 , C23C16/458
CPC分类号： C23C14/18 , C23C14/586 , C23C14/5866
摘要： An apparatus for reactive thermal treatment of thin film photovoltaic devices includes a furnace tube including an inner wall extended from a first end to a second end. The apparatus further includes a gas supply device coupled to the second end and configured to fill one or more working gases into the furnace tube. Additionally, the apparatus includes a cover configured to seal the furnace tube at the first end and serve as a heat sink for the one or more working gases. Furthermore, the apparatus includes a fixture mechanically attached to the cover. The fixture is configured to load an array of substrates into the furnace tube as the cover seals the furnace tube. Moreover, the apparatus includes a crescent shaped baffle member disposed seamlessly at a lower portion of the inner wall for blocking a convection current of the one or more working gases cooled by the cover.
摘要翻译：一种用于薄膜光伏器件的反应热处理的设备包括：炉管，其包括从第一端延伸到第二端的内壁。该装置还包括联接到第二端并被配置成将一种或多种工作气体填充到炉管中的气体供应装置。另外，该装置包括盖子，其构造成在第一端处密封炉管，并且用作一个或多个工作气体的散热器。此外，该装置包括机械地附接到盖的夹具。夹具被配置为当盖子密封炉管时将基板阵列加载到炉管中。此外，该装置包括一个新月形的挡板件，它可无缝地设置在内壁的下部，用于阻挡由盖冷却的一个或多个工作气体的对流。

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