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1. 发明授权

US07572339B2 Surface treatment system and method thereof 有权
标题翻译：表面处理系统及其方法
公开(公告)号：US07572339B2
公开(公告)日：2009-08-11
申请号：US10486031
申请日：2002-12-28
申请人： Cheon-Soo Cho , Dong-Sik Youn , Hyun-Wook Lee , Samchul Ha , Hyun-Woo Jun
发明人： Cheon-Soo Cho , Dong-Sik Youn , Hyun-Wook Lee , Samchul Ha , Hyun-Woo Jun
IPC分类号： C23C16/00
CPC分类号： C23C16/458 , C23C16/54
摘要： Disclosed are a surface treatment system that includes a deposition chamber (100) for forming a deposition layer at a surface of an object of surface treatment (900); a carrier (910) for carrying the object of surface treatment (900) by mounting thereon, and a power applying unit (230) for forming a deposition reaction by applying a power to the object in the deposition chamber (100), wherein the power applying unit (230) includes a fixed power applying unit (220) installed in the deposition chamber (100) and connected to an external power source (210); and a movable power applying unit (230) installed at the carrier (910) for being electrically connected to the fixed power applying unit (220) movably as the carrier on which the object of surface treatment (900) is mounted goes into the deposition chamber and thereby applying a power to the object of surface treatment mounted on the carrier by contacting thereto.
摘要翻译：公开了一种表面处理系统，其包括用于在表面处理物体（900）的表面处形成沉积层的沉积室（100）; 用于通过安装其上承载表面处理物体（900）的载体（910）和用于通过向沉积室（100）中的物体施加电力来形成沉积反应的动力施加单元（230），其中，施加单元（230）包括安装在所述沉积室（100）中并连接到外部电源（210）的固定供电单元（220）。以及安装在所述载体（910）上的用于电连接到所述固定电力施加单元（220）的可动电力施加单元（230），所述固定电力施加单元（220）可移动地作为其上安装有所述表面处理（900）的物体的载体进入所述沉积室从而通过与载体接触而对安装在载体上的表面处理对象施加电力。

2. 发明授权

US07175880B2 Surface treatment system and method 有权
标题翻译：表面处理系统及方法
公开(公告)号：US07175880B2
公开(公告)日：2007-02-13
申请号：US10496219
申请日：2002-12-28
申请人： Cheon-Soo Cho , Dong-Sik Youn , Hyun-Wook Lee , Samchul Ha , Hyun-Woo Jun
发明人： Cheon-Soo Cho , Dong-Sik Youn , Hyun-Wook Lee , Samchul Ha , Hyun-Woo Jun
IPC分类号： C23C16/00
CPC分类号： C23C16/45563 , C23C16/4412 , C23C16/455 , C23C16/54
摘要： A surface treatment system in which gas for a deposition reaction is injected into a deposition chamber and power is applied to form a deposition reaction to form a deposition layer at a surface of an object or surface treatment, wherein the deposition chamber has a plurality of deposition spaces disposed in parallel and a convey unit for conveying one or more objects of surface treatment to each deposition space or discharging the objects of surface treatment from each deposition space after a deposition reaction.
摘要翻译：一种表面处理系统，其中用于沉积反应的气体被注入沉积室并施加功率以形成沉积反应以在物体表面处理沉积层或表面处理，其中所述沉积室具有多个沉积平行布置的空间和用于将沉积反应之后的每个沉积空间的一个或多个表面处理物体输送到每个沉积空间或排放表面处理物体的输送单元。

3. 发明申请

US20050051090A1 Surface treatment system and method 有权
标题翻译：表面处理系统及方法
公开(公告)号：US20050051090A1
公开(公告)日：2005-03-10
申请号：US10496219
申请日：2002-12-28
申请人： Cheon-Soo Cho , Dong-Sik Youn , Hyun-Wook Lee , Samchul Ha , Hyun-Woo Jun
发明人： Cheon-Soo Cho , Dong-Sik Youn , Hyun-Wook Lee , Samchul Ha , Hyun-Woo Jun
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45563 , C23C16/4412 , C23C16/455 , C23C16/54
摘要： A surface treatment system in which gas for a deposition reaction is injected into a deposition chamber and power is applied to form a deposition reaction to form a deposition layer at a surface of an object or surface treatment, wherein the deposition chamber has a plurality of deposition spaces disposed in parallel and a convey unit for conveying one or more objects of surface treatment to each deposition space or discharging the objects of surface treatment from each deposition space after a deposition reaction.
摘要翻译：一种表面处理系统，其中用于沉积反应的气体被注入沉积室并施加功率以形成沉积反应以在物体表面处理沉积层或表面处理，其中所述沉积室具有多个沉积平行布置的空间和用于将沉积反应之后的每个沉积空间的一个或多个表面处理物体输送到每个沉积空间或排放表面处理物体的输送单元。

4. 发明申请

US20050016455A1 Surface treatment system and method 有权
标题翻译：表面处理系统及方法
公开(公告)号：US20050016455A1
公开(公告)日：2005-01-27
申请号：US10485900
申请日：2002-12-30
申请人： Cheon-Soo Cho , Dong-Sik Youn , Hyun-Wook Lee , Samchul Ha
发明人： Cheon-Soo Cho , Dong-Sik Youn , Hyun-Wook Lee , Samchul Ha
IPC分类号： C23C16/44 , C23C16/50 , C23C16/00
CPC分类号： C23C16/4411 , C23C16/50
摘要： A surface treatment system is disclosed to form a deposition layer at a surface of an object of surface treatment by using a deposition reaction in which an electrode (110) for applying power to form a deposition reaction in the deposition chamber (100) is installed between an inner wall (120) of the deposition chamber (100) and an object of surface treatment (900) and further includes a cooling unit (200) installed at the inner wall (120) of the deposition chamber (100) facing the electrode (110) and cooling ambient thereof.
摘要翻译：公开了一种表面处理系统，通过使用沉积反应在表面处理对象的表面上形成沉积层，其中用于在沉积室（100）中施加电力以形成沉积反应的电极（110）安装在沉积室（100）的内壁（120）和表面处理物（900），还包括安装在沉积室（100）的面向电极（100）的内壁（120）处的冷却单元（200） 110）及其冷却环境。

5. 发明授权

US07677199B2 Surface treatment system and method 有权
标题翻译：表面处理系统及方法
公开(公告)号：US07677199B2
公开(公告)日：2010-03-16
申请号：US10485900
申请日：2002-12-30
申请人： Cheon-Soo Cho , Dong-Sik Youn , Hyun-Wook Lee , Samchul Ha
发明人： Cheon-Soo Cho , Dong-Sik Youn , Hyun-Wook Lee , Samchul Ha
IPC分类号： C23C16/50 , C23C16/509 , C23C16/458 , C23C16/52 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4411 , C23C16/50
摘要： A surface treatment system is disclosed to form a deposition layer at a surface of an object of surface treatment by using a deposition reaction in which an electrode (110) for applying power to form a deposition reaction in the deposition chamber (100) is installed between an inner wall (120) of the deposition chamber (100) and an object of surface treatment (900) and further includes a cooling unit (200) installed at the inner wall (120) of the deposition chamber (100) facing the electrode (110) and cooling ambient thereof.
摘要翻译：公开了一种表面处理系统，通过使用沉积反应在表面处理对象的表面上形成沉积层，其中用于在沉积室（100）中施加电力以形成沉积反应的电极（110）安装在沉积室（100）的内壁（120）和表面处理物（900），还包括安装在沉积室（100）的面向电极（100）的内壁（120）处的冷却单元（200） 110）及其冷却环境。

6. 发明申请

US20060169201A1 Apparatus for supplying gas and apparatus for forming a layer having the same 审中-公开
标题翻译：用于供给气体的装置和用于形成具有该气体的装置的装置
公开(公告)号：US20060169201A1
公开(公告)日：2006-08-03
申请号：US11346549
申请日：2006-02-01
申请人： Wan-Goo Hwang , Seung-Ki Chae , Myeong-Jin Kim , Seoung-Chang Baek , Sung-Wook Park , Un-Chan Baek , Hyun-Wook Lee , Kyoung-Ho Jang , Seong-Ju Choi , Il-Kyoung Kim
发明人： Wan-Goo Hwang , Seung-Ki Chae , Myeong-Jin Kim , Seoung-Chang Baek , Sung-Wook Park , Un-Chan Baek , Hyun-Wook Lee , Kyoung-Ho Jang , Seong-Ju Choi , Il-Kyoung Kim
IPC分类号： B05B7/00
CPC分类号： C23C16/4486 , C23C16/45565 , C23C16/45574
摘要： In a gas supplying apparatus used to form a layer on a substrate, a liquid reactant is introduced into an atomizer through a liquid mass flow controller and an on-off valve. An aerosol mist formed by the atomizer is introduced into a vaporizer and then vaporized. The on-off valve is coupled with the atomizer and controlled by a valve controller of the liquid mass flow controller. The on-off valve is opened to form the layer and closed during downtime of a layer formation apparatus to prevent leakage of the remaining liquid reactant in a connecting conduit between the liquid mass flow controller and the on-off valve.
摘要翻译：在用于在基板上形成层的气体供给装置中，液体反应物通过液体质量流量控制器和开关阀引入雾化器。将由雾化器形成的气溶胶雾化物引入蒸发器中然后汽化。开关阀与雾化器耦合并由液体质量流量控制器的阀控制器控制。开关阀打开以形成层并且在层形成装置的停机期间关闭，以防止液体质量流量控制器和开关阀之间的连接导管中剩余的液体反应物泄漏。

7. 发明授权

US07597109B2 Spin scrubber apparatus 失效
标题翻译：旋转洗涤器
公开(公告)号：US07597109B2
公开(公告)日：2009-10-06
申请号：US11360417
申请日：2006-02-24
申请人： Hyun-Wook Lee
发明人： Hyun-Wook Lee
IPC分类号： B08B3/02
CPC分类号： H01L21/67766 , H01L21/67742 , H01L21/67748 , Y10S134/902
摘要： A spin scrubber apparatus has an index unit configured to support one or more cassettes, a processing unit having one or more cleaning stations facing the index unit across a transfer space, and a substrate transfer device disposed in the transfer space for transferring substrates one-by-one between the index unit and the processing unit. The transfer device includes a transfer block, and an index arm and a transfer arm unit supported by the transfer block. The transfer block is movable in the transfer space to position the index arm or the transfer arm unit in front of a cassette or a spin scrubber. The index arm loads/unloads substrates into/from a cassette mounted to the index unit. The transfer arm loads/unloads substrates into/from the processing unit. All of the movement takes place in the transfer space. Thus, the apparatus is compact, and it takes relatively little time to clean the substrates.
摘要翻译：旋转洗涤器装置具有构造成支撑一个或多个盒的标号单元，具有一个或多个清洁站的处理单元，所述清洁站在传送空间上面向着折射单元，以及设置在传送空间中的基板传送装置，用于一次性地传送基板在索引单元和处理单元之间。传送装置包括传送块和由传送块支撑的分度臂和传送臂单元。传送块可在传送空间中移动，以将索引臂或传送臂单元定位在盒或旋转洗涤器的前面。索引臂装载/卸载安装到索引单元的盒中/从装载到盒的盒中卸载基板。传送臂将基板装入/卸载处理单元。所有的运动发生在传送空间。因此，该装置是紧凑的，并且清洁基板所需的时间相对较少。

8. 发明申请

US20070110636A1 Device supplying process gas and related method 审中-公开
标题翻译：设备供应工艺气体及相关方法
公开(公告)号：US20070110636A1
公开(公告)日：2007-05-17
申请号：US11439292
申请日：2006-05-24
申请人： Hyun-Wook Lee , Bong-Chun Cho
发明人： Hyun-Wook Lee , Bong-Chun Cho
IPC分类号： B32B5/02
CPC分类号： H01L21/67253 , G05D7/0635 , H01L21/67017 , H01L21/67288
摘要： A reaction gas supplying comprising an MFC and adapted to sense when there is an error in the MFC, and a related method are disclosed. The reaction gas supplying device comprises a gas supply line disposed between a process chamber and a gas supplying element, a mass flow controller adapted to control a supply amount and a supply time of a gas, and a digital pressure gauge adapted to measure the pressure of the gas. The device further comprises a database, and a controller adapted to generate and output a first flow rate control signal, compare the measured pressure value of the gas with a standard pressure value stored in the database corresponding to the first flow rate control signal, and output an alarm generation control signal when the measured pressure value of the gas is outside of a set error range around the standard pressure value.
摘要翻译：一种反应气体供给，包括MFC并适于检测MFC中是否存在误差的反应气体，以及相关方法。反应气体供给装置包括设置在处理室和气体供给元件之间的气体供给管线，适于控制气体的供给量和供给时间的质量流量控制器，以及适于测量气体的压力的数字式压力计气体。该装置还包括数据库，以及控制器，其适于生成并输出第一流量控制信号，将测得的气体压力值与存储在与第一流量控制信号对应的数据库中的标准压力值进行比较，并输出当所测量的气体压力值在围绕标准压力值的设定误差范围之外时的报警发生控制信号。

9. 发明申请

US20060231127A1 Spin scrubber apparatus 失效
公开(公告)号：US20060231127A1
公开(公告)日：2006-10-19
申请号：US11360417
申请日：2006-02-24
申请人： Hyun-Wook Lee
发明人： Hyun-Wook Lee
IPC分类号： B08B3/02
CPC分类号： H01L21/67766 , H01L21/67742 , H01L21/67748 , Y10S134/902
摘要： A spin scrubber apparatus has an index unit configured to support one or more cassettes, a processing unit having one or more cleaning stations facing the index unit across a transfer space, and a substrate transfer device disposed in the transfer space for transferring substrates one-by-one between the index unit and the processing unit. The transfer device includes a transfer block, and an index arm and a transfer arm unit supported by the transfer block. The transfer block is movable in the transfer space to position the index arm or the transfer arm unit in front of a cassette or a spin scrubber. The index arm loads/unloads substrates into/from a cassette mounted to the index unit. The transfer arm loads/unloads substrates into/from the processing unit. All of the movement takes place in the transfer space. Thus, the apparatus is compact, and it takes relatively little time to clean the substrates.

10. 发明授权

US07786010B2 Method for forming a thin layer on semiconductor substrates 有权
标题翻译：在半导体衬底上形成薄层的方法
公开(公告)号：US07786010B2
公开(公告)日：2010-08-31
申请号：US11856908
申请日：2007-09-18
申请人： Hyun-Wook Lee , Wan-Goo Hwang , Bu-Cheul Lee , Jeong-Soo Suh , Sung-Il Han , Seong-Ju Choi
发明人： Hyun-Wook Lee , Wan-Goo Hwang , Bu-Cheul Lee , Jeong-Soo Suh , Sung-Il Han , Seong-Ju Choi
IPC分类号： H01L21/44
CPC分类号： H01L21/31645 , C23C16/405 , C23C16/45531 , C23C16/45546 , H01L21/02181 , H01L21/02189 , H01L21/0228 , H01L21/3141 , H01L21/31641 , H01L21/31691
摘要： An apparatus and a method form a thin layer on each of multiple semiconductor substrates. A processing chamber of the apparatus includes a boat in which the semiconductor substrates are arranged in a vertical direction. A vaporizer vaporizes a liquid metal precursor into a metal precursor gas. A buffer receives a source gas from the vaporizer and increases a pressure of the source gas to higher than atmospheric pressure, the source gas including the metal precursor gas. A first supply pipe connects the buffer and the processing chamber, the first supply pipe including a first valve for controlling a mass flow rate of the source gas. A second supply pipe connects the vaporizer and a pump for creating a vacuum inside the processing chamber, the second supply pipe including a second valve for exhausting a dummy gas during an idling operation of the vaporizer.
摘要翻译：一种装置和方法在多个半导体衬底的每一个上形成薄层。该设备的处理室包括一个其中半导体衬底在垂直方向上布置的舟皿。蒸发器将液态金属前体蒸发成金属前体气体。缓冲器接收来自蒸发器的源气体，并且将源气体的压力增加到高于大气压，源气体包括金属前体气体。第一供给管连接缓冲器和处理室，第一供给管包括用于控制源气体的质量流量的第一阀。第二供给管连接蒸发器和泵，用于在处理室内产生真空，第二供应管包括用于在蒸发器的空转操作期间排出虚拟气体的第二阀。

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