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1. 发明授权

US07368822B2 Copper metalized ohmic contact electrode of compound device 有权
标题翻译：复合器件的铜金属化欧姆接触电极
公开(公告)号：US07368822B2
公开(公告)日：2008-05-06
申请号：US11377302
申请日：2006-03-17
申请人： Cheng-Shih Lee , Edward Yi Chang , Ke-Shian Chen
发明人： Cheng-Shih Lee , Edward Yi Chang , Ke-Shian Chen
IPC分类号： H01L23/48
CPC分类号： H01L21/28575
摘要： The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.
摘要翻译：本发明提供了一种用于铜金属化的欧姆接触，其热扩散得到改善并且成本降低。其中，通过Pd，Ge和Cu的三个金属层的沉积和退火形成欧姆接触; 并且通过三层的厚度来调整欧姆接触的接触电阻。

2. 发明申请

US20050194545A1 [ADJUSTABLE COLLIMATOR AND SPUTTERING APPARATUS WITH THE SAME] 审中-公开
标题翻译： [可调式收卷机及其相关设备]
公开(公告)号：US20050194545A1
公开(公告)日：2005-09-08
申请号：US10709487
申请日：2004-05-10
申请人： Cheng-Shih Lee , Edward Yi Chang
发明人： Cheng-Shih Lee , Edward Yi Chang
IPC分类号： C25B9/00 , G01N21/01 , G21K5/00 , H01L21/363
CPC分类号： H01J37/34 , H01J37/3447
摘要： An adjustable collimator and a sputtering apparatus with the same are provided. The adjustable collimator comprises an adjustable main body, first and second collimating elements. The adjustable main body has an interior space, a top portion, a bottom portion and an adjuster between the top portion and the bottom portion. The adjuster is adapted for adjusting a relative distance between the top portion and the bottom portion. A first collimating element fixed inside the interior space of the top portion in a manner to move with the top portion and a second collimating element fixed inside the interior space of the bottom portion to move with the bottom portion. When the adjustable collimator applies to sputtering apparatus, it can easily control the incident angel of the molecule of the sputtering material by adjusting a relative distance between the top and bottom portion.
摘要翻译：提供了一种可调准直器和具有该准直器的溅射装置。可调节准直器包括可调主体，第一和第二准直元件。可调主体在顶部和底部之间具有内部空间，顶部，底部和调节器。调节器适于调节顶部和底部之间的相对距离。第一准直元件以顶部移动的方式固定在顶部的内部空间内部，固定在底部的内部空间内的第二准直元件与底部一起移动。当可调整准直器适用于溅射装置时，可以通过调节顶部和底部之间的相对距离来容易地控制溅射材料的分子的入射角。

3. 发明授权

US07420227B2 Cu-metalized compound semiconductor device 有权
标题翻译：铜金属化合物半导体器件
公开(公告)号：US07420227B2
公开(公告)日：2008-09-02
申请号：US11158070
申请日：2005-06-22
申请人： Edward Yi Chang , Shang-Wen Chang , Cheng-Shih Lee
发明人： Edward Yi Chang , Shang-Wen Chang , Cheng-Shih Lee
IPC分类号： H01L29/45
CPC分类号： H01L29/7371 , H01L29/452 , H01L29/7783 , H01L29/812
摘要： The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.
摘要翻译：本发明是一种化合物半导体器件，其特征在于，其被Cu金属化以提高器件的可靠性并大大降低生产成本。

4. 发明授权

US07847410B2 Interconnect of group III-V semiconductor device and fabrication method for making the same 有权
标题翻译： III-V族半导体器件的互连及其制造方法
公开(公告)号：US07847410B2
公开(公告)日：2010-12-07
申请号：US11164404
申请日：2005-11-22
申请人： Cheng-Shih Lee , Edward Yi Chang , Huang-Choung Chang
发明人： Cheng-Shih Lee , Edward Yi Chang , Huang-Choung Chang
IPC分类号： H01L23/48
CPC分类号： H01L29/7371 , H01L23/53238 , H01L29/41708 , H01L29/41725 , H01L29/42304 , H01L29/66318 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： An interconnect of the group III-V semiconductor device and the fabrication method for making the same are described. The interconnect includes a first adhesion layer, a diffusion barrier layer for preventing the copper from diffusing, a second adhesion layer and a copper wire line. Because a stacked-layer structure of the first adhesion layer/diffusion barrier layer/second adhesion layer is located between the copper wire line and the group III-V semiconductor device, the adhesion between the diffusion barrier layer and other materials is improved. Therefore, the yield of the device is increased.
摘要翻译：描述了III-V族半导体器件的互连及其制造方法。互连包括第一粘合层，用于防止铜扩散的扩散阻挡层，第二粘合层和铜线。由于第一粘附层/扩散阻挡层/第二粘合层的堆叠层结构位于铜线和III-V族半导体器件之间，所以扩散阻挡层与其它材料之间的粘合性提高。因此，装置的产量增加。

5. 发明申请

US20070040274A1 INTERCONNECT OF GROUP III- V SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR MAKING THE SAME 有权
标题翻译： III-V族半导体器件的互连及制造方法
公开(公告)号：US20070040274A1
公开(公告)日：2007-02-22
申请号：US11164404
申请日：2005-11-22
申请人： Cheng-Shih Lee , Edward Yi Chang , Huang-Choung Chang
发明人： Cheng-Shih Lee , Edward Yi Chang , Huang-Choung Chang
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L29/7371 , H01L23/53238 , H01L29/41708 , H01L29/41725 , H01L29/42304 , H01L29/66318 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： An interconnect of the group III-V semiconductor device and the fabrication method for making the same are described. The interconnect includes a first adhesion layer, a diffusion barrier layer for preventing the copper from diffusing, a second adhesion layer and a copper wire line. Because a stacked-layer structure of the first adhesion layer/diffusion barrier layer/second adhesion layer is located between the copper wire line and the group III-V semiconductor device, the adhesion between the diffusion barrier layer and other materials is improved. Therefore, the yield of the device is increased.
摘要翻译：描述了III-V族半导体器件的互连及其制造方法。互连包括第一粘合层，用于防止铜扩散的扩散阻挡层，第二粘合层和铜线。由于第一粘附层/扩散阻挡层/第二粘合层的堆叠层结构位于铜线和III-V族半导体器件之间，所以扩散阻挡层与其它材料之间的粘附性得到改善。因此，装置的产量增加。

6. 发明申请

US20130161708A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体结构及其制造方法
公开(公告)号：US20130161708A1
公开(公告)日：2013-06-27
申请号：US13606447
申请日：2012-09-07
申请人： Ming-Tsan Peng , Shih-Tung Cheng , Edward Yi Chang , Po-Chien Chou , Shyr-Long Jeng , Chia-Hua Chang , Tsung-Lin Chen , Jian-Feng Tsai
发明人： Ming-Tsan Peng , Shih-Tung Cheng , Edward Yi Chang , Po-Chien Chou , Shyr-Long Jeng , Chia-Hua Chang , Tsung-Lin Chen , Jian-Feng Tsai
IPC分类号： H01L29/78 , H01L21/58
CPC分类号： H01L23/42 , H01L23/13 , H01L24/16 , H01L24/32 , H01L24/48 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/29139 , H01L2224/321 , H01L2224/32225 , H01L2224/32245 , H01L2224/3318 , H01L2224/48137 , H01L2224/48227 , H01L2224/73204 , H01L2924/00014 , H01L2924/15156 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate, a die and a medium. The substrate has an upper substrate surface. The substrate has a trench extended downward from the upper substrate surface. The trench has a side trench surface. The die is in the trench. The die has a lower die surface and a side die surface. The lower die surface is below the upper substrate surface. A part of the trench between the side trench surface and the side die surface is filled with the medium.
摘要翻译：提供半导体结构及其制造方法。半导体结构包括基板，管芯和介质。基板具有上基板表面。衬底具有从上衬底表面向下延伸的沟槽。沟槽具有侧沟槽表面。死在沟里。模具具有下模表面和侧模表面。下模表面在上基板表面下方。侧沟槽表面和侧模表面之间的沟槽的一部分填充有介质。

7. 发明授权

US08263425B2 Multilayer substrate having gallium nitride layer and method for forming the same 有权
标题翻译：具有氮化镓层的多层基板及其形成方法
公开(公告)号：US08263425B2
公开(公告)日：2012-09-11
申请号：US12976598
申请日：2010-12-22
申请人： Edward Yi Chang , Yu-Lin Hsiao , Jung-Chi Lu
发明人： Edward Yi Chang , Yu-Lin Hsiao , Jung-Chi Lu
IPC分类号： H01L21/20
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/02639 , H01L29/66462 , H01L29/778
摘要： The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer layer, three aluminum gallium nitride layers with different aluminum concentrations and a gallium nitride layer are formed in sequence on the substrate in the openings. The three aluminum gallium nitride layers with different aluminum concentrations are capable of releasing stress, decreasing cracks on the surface of the gallium nitride layer and controlling interior defects, such that the present invention provides a gallium nitride layer with larger area, greater thickness, no cracks and high quality for facilitating the formation of high performance electronic components in comparison with the prior art. The present invention further provides a multilayer substrate having a gallium nitride layer.
摘要翻译：本发明提供一种形成具有氮化镓层的多层基板的方法，其中在基板上形成具有多个开口的网格层，缓冲层，具有不同铝浓度的三个氮化铝镓层和氮化镓层在开口中的基板上依次形成。具有不同铝浓度的三个氮化铝铝层能够释放应力，减少氮化镓层表面上的裂纹并控制内部缺陷，使得本发明提供具有较大面积，更大厚度，无裂纹的氮化镓层并且与现有技术相比有利于形成高性能电子部件的高质量。本发明还提供了具有氮化镓层的多层基板。

8. 发明申请

US20120147640A1 POWER CIRCUIT AND DIRECT CURRENT TO DIRECT CURRENT CONVERTER THEREOF 有权
标题翻译：电源电流和直流电流直流电流转换器
公开(公告)号：US20120147640A1
公开(公告)日：2012-06-14
申请号：US13014241
申请日：2011-01-26
申请人： Edward Yi Chang , Shyr Long Jeng , Ming Tsan Peng
发明人： Edward Yi Chang , Shyr Long Jeng , Ming Tsan Peng
IPC分类号： H02M7/217 , H03K3/00
CPC分类号： H02M7/2176
摘要： A power circuit is applicable to a Direct Current (DC) to DC converter. The power circuit includes a gate driver circuit and a High Electron Mobility Transistor (HEMT). The gate driver circuit functions as a Sigmoid (S) function and controls a gate and a source of the HEMT with a cross voltage of the sigmoid (S) type function. Accordingly, an overall characteristic curve of the HEMT and the gate driver circuit is like a characteristic curve of a single rectifier diode, so as to achieve a rectifying, freewheeling, or reversing effect. In addition, since an energy loss is low when the HEMT is conducted, the energy loss of the whole power circuit is much less than that of a conventional diode.
摘要翻译：电源电路适用于直流（DC）到直流转换器。电源电路包括栅极驱动电路和高电子迁移率晶体管（HEMT）。栅极驱动器电路用作S形（S）功能，并用S型功能的交叉电压控制HEMT的栅极和源极。因此，HEMT和栅极驱动电路的总体特性曲线与单个整流二极管的特性曲线相同，以实现整流，续流或反转效果。另外，由于在HEMT导通时能量损失低，所以整个电源电路的能量损耗比传统的二极管的能量损耗要小得多。

9. 发明申请

US20110156100A1 High Electron Mobility Transistor and Method for Fabricating the Same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US20110156100A1
公开(公告)日：2011-06-30
申请号：US12759012
申请日：2010-04-13
申请人： Edward Yi Chang , Chien-I Kuo , Heng-Tung Hsu
发明人： Edward Yi Chang , Chien-I Kuo , Heng-Tung Hsu
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , B82Y10/00 , H01L29/1029 , H01L29/15 , H01L29/66462 , H01L29/7783
摘要： A high electron mobility transistor includes a substrate, a buffer layer, a channel layer, a spacer layer, a schottky layer and a cap layer. The buffer layer is formed on the substrate. The channel layer is formed on the buffer layer, in which the channel layer comprises a superlattice structure formed with a plurality of indium gallium arsenide thin films alternately stacked with a plurality of indium arsenide thin films. The spacer layer is formed on the channel layer. The schottky layer is formed on the spacer layer. The cap layer is formed on the schottky layer.
摘要翻译：高电子迁移率晶体管包括衬底，缓冲层，沟道层，间隔层，肖特基层和覆盖层。缓冲层形成在基板上。沟道层形成在缓冲层上，其中沟道层包括由多个砷化铟锡薄膜交替层叠的多个砷化铟镓薄膜形成的超晶格结构。间隔层形成在沟道层上。在间隔层上形成肖特基层。盖层形成在肖特基层上。

10. 发明授权

US08735713B2 Sun-chasing device 有权
标题翻译：太阳追逐装置
公开(公告)号：US08735713B2
公开(公告)日：2014-05-27
申请号：US13599086
申请日：2012-08-30
申请人： You-Long Sie , Edward Yi Chang , Shyr-Long Jeng , Wei-Hua Chieng , Bin-Han Lue , Ming-Tsan Peng , Chia-Hua Chang , Jwu-Shen Hu , Chien-Hsun Chiang
发明人： You-Long Sie , Edward Yi Chang , Shyr-Long Jeng , Wei-Hua Chieng , Bin-Han Lue , Ming-Tsan Peng , Chia-Hua Chang , Jwu-Shen Hu , Chien-Hsun Chiang
IPC分类号： F24J2/52 , F24J2/54
CPC分类号： F24S30/48 , F24S30/45 , F24S2030/131 , F24S2030/145 , Y02E10/47
摘要： A sun-chasing device is provided, including a base, a first transmitter disposed on the base, a second transmitter, a support, a carrier pivotally connected to the support for carrying a solar module, a first supporting component pivotally connected to the first transmitter and the carrier, and a second supporting component pivotally connected to the second transmitter and the carrier. The sun-chasing device has great rigidity and carrying ability against strong wind, and has great precision and rotation angle, such that a solar plate can precisely aim at sun for long time and thus the efficiency of a solar module is significantly increased.
摘要翻译：提供了一种太阳追逐装置，包括基座，设置在基座上的第一发射器，第二发射器，支撑件，枢轴连接到用于承载太阳能模块的支撑件的托架，枢转地连接到第一发射器的第一支撑部件和载体，以及枢转地连接到第二发射器和载体的第二支撑部件。太阳追光装置对强风具有很强的刚性和承载能力，具有很高的精度和旋转角度，使得太阳能板可以长时间精确地瞄准太阳，从而显着提高太阳能电池组件的效率。

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