专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06620530B1 Synthetic anti-parallel spin valve, having improved robustness, and process to manufacture it 有权
标题翻译：合成的反并联自旋阀，具有改进的鲁棒性，以及制造方法
公开(公告)号：US06620530B1
公开(公告)日：2003-09-16
申请号：US09769813
申请日：2001-01-26
申请人： Min Li , Cheng T. Horng , Ru Ying Tong , Simon H. Liao , Kochan Ju
发明人： Min Li , Cheng T. Horng , Ru Ying Tong , Simon H. Liao , Kochan Ju
IPC分类号： G11B560
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3163 , H01F10/3268 , H01F10/3295 , H01F41/302 , Y10S428/90 , Y10T428/11 , Y10T428/1121
摘要： A spin valve structure and a method for manufacturing it are described. The spin valve uses a modified pinned layer that consists of two cobalt iron layers separated by a layer of either ruthenium, iridium, or rhodium. A key feature of the invention is that this spacer layer is significantly thinner (typically 3-4 Angstroms) than similar layers in prior art structures. Normally, when such thin spacer layers are used, annealing fields in excess of 20,000 Oersted are needed to cause the two cobalt iron layers to become antiparallel. The present invention, however, teaches that much lower annealing fields (spanning a limited range) may be used with equal effect. The result is that a very high internal pinning field is created giving devices of this type greater pinned layer stability and reduced pinning reversal. These devices also exhibits a minimum amount of open looping in their hysteresis curves.
摘要翻译：描述了一种自旋阀结构及其制造方法。自旋阀使用由两层钴铁层组成的改性钉扎层，其由钌，铱或铑层分开。本发明的一个关键特征是该间隔层比现有技术结构中相似的层明显更薄（通常为3-4埃）。通常，当使用这种薄的间隔层时，需要超过20,000奥斯特的退火场，以使两个钴铁层变得反平行。然而，本发明教导了可以使用相同效果的低得多的退火场（跨越有限范围）。结果是产生非常高的内部钉扎场，使得这种类型的装置更大的被钉扎层稳定性并减少钉扎反转。这些装置在其滞后曲线中也表现出最小量的开环。

2. 发明授权

US06630248B1 Synthetic anti-parallel/parallel/pinned layer spin valve 失效
标题翻译：合成反并联/并联/固定层自旋阀
公开(公告)号：US06630248B1
公开(公告)日：2003-10-07
申请号：US09764231
申请日：2001-01-19
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Simon H. Liao , Kochan Ju
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Simon H. Liao , Kochan Ju
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B5/3932 , H01F10/3272 , H01F10/3295 , H01F41/302 , Y10T428/1121 , Y10T428/1164 , Y10T428/12646 , Y10T428/12826 , Y10T428/12861 , Y10T428/12868 , Y10T428/12931 , Y10T428/24975
摘要： A spin valve structure is described that has greater pinned layer robustness than is found in spin valves of the existing known art, making it well suited for use in high density recording. This has been achieved by a using a modified pinned layer that is a laminate of five layers—a first layer of cobalt-iron, a layer of ruthenium, a second layer of cobalt-iron, a layer of nickel-chromium, and a third layer of cobalt-iron. The second layer of cobalt-iron should be about twice the thickness of the third cobalt-iron layer. The sum of the second and third cobalt-iron layer thicknesses may be greater or smaller than the thickness of the first cobalt-iron layer. A process for manufacturing the structure is also described.
摘要翻译：描述了一种自旋阀结构，其具有比现有已知技术的自旋阀中发现的更大的固着层坚固性，使得其非常适合用于高密度记录。这已经通过使用作为五层的层叠体的修饰的钉扎层 - 第一层钴 - 铁，钌层，第二层钴 - 铁，一层镍 - 铬和第三层钴铁层。钴 - 铁的第二层应为第三钴 - 铁层厚度的约两倍。第二和第三钴 - 铁层厚度的总和可以大于或小于第一钴 - 铁层的厚度。还描述了用于制造该结构的方法。

3. 发明授权

US06392853B1 Spin valve structure design with laminated free layer 失效
标题翻译：自旋阀结构设计采用层压自由层
公开(公告)号：US06392853B1
公开(公告)日：2002-05-21
申请号：US09489973
申请日：2000-01-24
申请人： Min Li , Simon H. Liao , Cheng T. Horng , Youfeng Zheng , Ru-Ying Tong , Kochan Ju
发明人： Min Li , Simon H. Liao , Cheng T. Horng , Youfeng Zheng , Ru-Ying Tong , Kochan Ju
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/096 , G11B5/3967 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3295 , H01L43/08 , Y10T428/1121 , Y10T428/12465 , Y10T428/26
摘要： The giant magnetoresistance (GMR) effect includes a contribution that is due to anisotropic magnetoresistance (AMR). Unfortunately the AMR effect tends to degrade the peak-to-peak signal asymmetry. Additionally, a high AMR/GMR ratio causes a larger signal asymmetry variation. It is therefor desirable to reduce both the AMR contribution as well as the AMR/GMR ratio. This has been achieved by modifying the free layer through the insertion of an extra layer of a highly resistive or insulating material at approximately mid thickness level. This layer is from 3 to 15 Angstroms thick and serves to reduce the Anisotropic Magneto-resistance contribution to the total magneto-resistance of the device. This reduces the GMR contribution only slightly but cuts the AMR/GMR ratio in half, thereby improving cross-track asymmetry and signal linearity.
摘要翻译：巨磁电阻（GMR）效应包括归因于各向异性磁阻（AMR）。不幸的是，AMR效应趋于降低峰 - 峰信号不对称性。另外，高AMR / GMR比率导致更大的信号不对称变化。因此，减少AMR贡献以及AMR / GMR比值是有希望的。这已经通过在大约中等厚度水平上插入高电阻或绝缘材料的额外层来修饰自由层来实现。该层厚度为3至15埃，用于降低各向异性磁阻对器件的总磁阻的贡献。这仅略微降低了GMR贡献，但将AMR / GMR比率降低了一半，从而提高了交叉磁道不对称性和信号线性度。

4. 发明授权

US06292336B1 Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient 失效
标题翻译：具有增强磁阻（MR）系数的巨磁阻（GMR）传感器元件
公开(公告)号：US06292336B1
公开(公告)日：2001-09-18
申请号：US09408703
申请日：1999-09-30
申请人： Cheng T. Horng , Ru-Ying Tong , Kochan Ju , Mao-Min Chen , Jei-Wei Chang , Simon H. Liao
发明人： Cheng T. Horng , Ru-Ying Tong , Kochan Ju , Mao-Min Chen , Jei-Wei Chang , Simon H. Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3268
摘要： A method for forming a giant magnetoresistive (GMR) sensor element, and a giant magnetoresistive (GMR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a free ferromagnetic layer separated from a pinned ferromagnetic layer in turn formed thereover by a non-magnetic conductor spacer layer, where the pinned ferromagnetic layer in turn has a pinning material layer formed thereover. The method contemplates a giant magnetoresistive (GMR) sensor element formed in accord with the method. The nickel oxide material layer provides the giant magnetoresistive (GMR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.
摘要翻译：一种用于形成巨磁阻（GMR）传感器元件的方法，以及根据该方法形成的巨磁阻（GMR）传感元件。根据该方法，首先提供基板。然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻（MR）电阻率敏感度增强材料形成的晶种层。然后在种子层上形成氧化镍材料层。最后，然后在氧化镍材料层上形成与被钉扎的铁磁性层分离的自由铁磁层，然后由非磁性导体间隔层形成，其中钉扎的铁磁层又形成有钉扎材料层。该方法考虑了根据该方法形成的巨磁阻（GMR）传感器元件。氧化镍材料层提供具有增强的磁阻（MR）电阻率敏感性的巨磁阻（GMR）传感器元件。

5. 发明授权

US06590751B1 Anisotropic magnetoresistive (MR) sensor element with enhanced magnetoresistive (MR) coefficient 有权
标题翻译：具有增强磁阻（MR）系数的各向异性磁阻（MR）传感器元件
公开(公告)号：US06590751B1
公开(公告)日：2003-07-08
申请号：US09408700
申请日：1999-09-30
申请人： Cheng T. Horng , Rongfu Xiao , Ru-Ying Tong , Jei-Wei Chang , Kochan Ju , Simon H. Liao
发明人： Cheng T. Horng , Rongfu Xiao , Ru-Ying Tong , Jei-Wei Chang , Kochan Ju , Simon H. Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B5/3954
摘要： A method for forming an anisotropic magnetoresistive (MR) sensor element, and the anisotropic magnetoresistive (MR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a magnetoresistive (MR) layer. The method contemplates the anisotropic magnetoresistive (MR) sensor element formed in accord with the method. The nickel oxide material layer provides the anisotropic magnetoresistive (MR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.
摘要翻译：一种用于形成各向异性磁阻（MR）传感器元件的方法和根据该方法形成的各向异性磁阻（MR）传感器元件。根据该方法，首先提供基板。然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻（MR）电阻率敏感度增强材料形成的晶种层。然后在种子层上形成氧化镍材料层。最后，在氧化镍材料层上形成磁阻（MR）层。该方法考虑了根据该方法形成的各向异性磁阻（MR）传感器元件。氧化镍材料层提供具有增强的磁阻（MR）电阻率敏感性的各向异性磁阻（MR）传感器元件。

6. 发明授权

US06857180B2 Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor 失效
标题翻译：用于制造图案化合成纵向交换偏置GMR传感器的方法
公开(公告)号：US06857180B2
公开(公告)日：2005-02-22
申请号：US10104802
申请日：2002-03-22
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Feng Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Feng Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

7. 发明授权

US07152304B2 Method for fabricating a patterned, synthetic transverse exchange biased GMR sensor 失效
标题翻译：用于制造图案化合成横向交换偏置GMR传感器的方法
公开(公告)号：US07152304B2
公开(公告)日：2006-12-26
申请号：US11036959
申请日：2005-01-14
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

8. 发明授权

US06775903B2 Method for fabricating a top magnetoresistive sensor element having a synthetic pinned layer 失效
标题翻译：用于制造具有合成固定层的顶部磁阻传感器元件的方法
公开(公告)号：US06775903B2
公开(公告)日：2004-08-17
申请号：US09953546
申请日：2001-09-17
申请人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
发明人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , Y10T29/49032 , Y10T29/49034 , Y10T29/49039 , Y10T29/49044 , Y10T29/49055
摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.
摘要翻译：用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。由此生产的传感器结构适用于高密度应用。

9. 发明授权

US07400475B2 Patterned, synthetic longitudinally exchange biased GMR sensor 失效
标题翻译：图案化，合成纵向交换偏置GMR传感器
公开(公告)号：US07400475B2
公开(公告)日：2008-07-15
申请号：US11036529
申请日：2005-01-14
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

10. 发明授权

US07134186B2 Method for fabricating a patterned, synthetic transversely exchanged biased GMR sensor 失效
标题翻译：用于制造图案化合成的横向交换的偏置GMR传感器的方法
公开(公告)号：US07134186B2
公开(公告)日：2006-11-14
申请号：US11036922
申请日：2005-01-14
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式