专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06458689B2 Use of PE-SiON or PE-Oxide for contact or via photo and for defect reduction with oxide and w chemical-mechanical polish 有权
标题翻译：使用PE-SiON或PE氧化物进行接触或通过照相和氧化物和化学机械抛光剂进行缺陷还原
公开(公告)号：US06458689B2
公开(公告)日：2002-10-01
申请号：US09818714
申请日：2001-03-28
申请人： Chen-Hua Yu , Syun-Ming Jang , Tsu Shih , Anthony Yen , Jih-Chuyng Twu
发明人： Chen-Hua Yu , Syun-Ming Jang , Tsu Shih , Anthony Yen , Jih-Chuyng Twu
IPC分类号： H01L214763
CPC分类号： H01L21/0276 , H01L21/31144 , H01L21/3144 , H01L21/3145 , H01L21/7684 , Y10S438/97
摘要： A method forming a protective (SiON or PE-Ox) dielectric anti-reflective coating (DARC) over a dielectric layer after a chemical-mechanical polish dielectric layer planarization process and before a chemical-mechanical polish of a conductive layer used in a contact or via plug formation. A dielectric layer is chemical-mechanical polished thereby creating microscratches in the dielectric layer. The invention's protective SiON or PE-OX DARC layer is formed over the dielectric layer whereby the protective SiON or PE-OX DARC layer fills in the microscratches. A first opening is etched in he protective layer and the dielectric layer. A conductive layer is formed over the protective layer and fills the first opening. The conductive layer is chemical-mechanical polished to remove the conductive layer from over the protective layer and to form an interconnect filling the first opening. The protective SiON or PE-OX DARC layer is used as a CMP stop thereby preventing microscratches in the dielectric layer.
摘要翻译：在化学机械抛光介质层平坦化工艺之后和用于接触的导电层的化学机械抛光之前，在电介质层上形成保护性（SiON或PE-Ox）电介质抗反射涂层（DARC）的方法或通过插塞形成。电介质层被化学机械抛光，从而在电介质层中形成微细结构。本发明的保护性SiON或PE-OX DARC层形成在电介质层上，由此保护性SiON或PE-OX DARC层填充在微细凹槽中。在其保护层和电介质层中蚀刻第一开口。导电层形成在保护层上并填充第一开口。导电层被化学机械抛光以从保护层上方移除导电层并形成填充第一开口的互连。使用保护性SiON或PE-OX DARC层作为CMP阻挡层，从而防止电介质层中的微细纹。

IPRDB

热门服务

关于我们

友情链接

联系方式