会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Optoelectronic component with three-dimension quantum well structure and method for producing the same
    • 具有三维量子阱结构的光电子元件及其制造方法
    • US08501510B2
    • 2013-08-06
    • US13473924
    • 2012-05-17
    • Benson ChaoChung-Hua FuShih-Chieh Jang
    • Benson ChaoChung-Hua FuShih-Chieh Jang
    • H01L21/00
    • H01L21/302H01L33/00Y02P70/521
    • An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.
    • 提供具有三维量子阱结构的光电子部件及其制造方法,其中光电子部件包括衬底,第一半导体层,过渡层和量子阱结构。 第一半导体层设置在基板上。 过渡层在第一半导体层上生长,含有第一氮化物化合物半导体材料,并且至少具有纹理,其中所述纹理至少具有至少一个至少具有倾斜面的第一突起,至少第一沟槽至少具有 倾斜小面和连接在倾斜面之间的至少一个台肩面。 量子阱结构在纹理上生长并由突起,沟槽和肩面形成。
    • 5. 发明授权
    • Ion implanting system
    • 离子注入系统
    • US08698110B2
    • 2014-04-15
    • US13101892
    • 2011-05-05
    • Heng-Gung ChenShih-Chieh Jang
    • Heng-Gung ChenShih-Chieh Jang
    • G21K5/00
    • H01J37/3171H01J37/244H01J2237/24514H01J2237/24528H01J2237/24542
    • An ion implanting system includes an ion beam generator, a mass separation device, a holder device and a first detector. The ion beam generator is configured for generating a first ion beam. The mass separation device is configured for isolating a second ion beam comprising required ions from the first ion beam. The holder device is configured for holding a least one substrate. The holder device and the first detector reciprocate relative to the second ion beam along a first direction to make the substrate and the first detector pass across a projection region of the second ion beam, wherein the first detector is configured for obtaining relevant parameters of the second ion beam. The above-mentioned system is able to obtain the relevant parameters of the ion beam during ion implantation so that the system may immediately adjust the fabrication parameters to obtain better effect of ion implantation.
    • 离子注入系统包括离子束发生器,质量分离装置,保持装置和第一检测器。 离子束发生器被配置用于产生第一离子束。 质量分离装置被配置用于从第一离子束隔离包含所需离子的第二离子束。 保持器装置构造成用于保持至少一个基板。 保持器装置和第一检测器沿着第一方向相对于第二离子束往复运动,以使得基板和第一检测器穿过第二离子束的突出区域,其中第一检测器被配置用于获得第二离子束的相关参数 离子束。 上述系统能够在离子注入期间获得离子束的相关参数,使得系统可以立即调整制造参数以获得更好的离子注入效果。
    • 6. 发明申请
    • INTERACTIVE INTELLECTUAL ROBOTIC TOY AND CONTROL METHOD OF THE SAME
    • 互动智能玩具及其控制方法
    • US20090088044A1
    • 2009-04-02
    • US11866161
    • 2007-10-02
    • Chun-Yi YangFeng-Jen WangShih-Chieh Jang
    • Chun-Yi YangFeng-Jen WangShih-Chieh Jang
    • A63H3/28
    • A63H3/28A63H2200/00
    • An interactive intellectual robotic toy and control method of the same includes a main processor. At least one memory unit connects the main processor for storing motion data and sound data. A control module respectively connects the main processor and a driver module, and the driver module further connects motors. The control module receives the motion data stored in the memory unit under control of the main processor. An audio handling module connects the main processor and a speaker, the audio handling unit receives the sound data stored in the memory unit under control of the main processor. A USB module connects the main processor for renewing the data stored in the memory unit. A RFID module has a reading module connecting the main processor, a first RF antenna connecting the reading module and identification modules, each identification module has a design, a tag with an electronic code corresponding to the design, and a second RF antenna.
    • 互动智能机器人玩具及其控制方法包括主处理器。 至少一个存储器单元连接主处理器以存储运动数据和声音数据。 控制模块分别连接主处理器和驱动器模块,并且驱动器模块进一步连接电动机。 控制模块在主处理器的控制下接收存储在存储器单元中的运动数据。 音频处理模块连接主处理器和扬声器,音频处理单元在主处理器的控制下接收存储在存储器单元中的声音数据。 USB模块连接主处理器,以更新存储在存储器单元中的数据。 RFID模块具有连接主处理器的读取模块,连接读取模块和识别模块的第一RF天线,每个识别模块具有设计,具有与设计相对应的电子代码的标签和第二RF天线。
    • 8. 发明申请
    • ION IMPLANTING SYSTEM
    • 离子植入系统
    • US20120280137A1
    • 2012-11-08
    • US13101892
    • 2011-05-05
    • Heng-Gung CHENShih-Chieh Jang
    • Heng-Gung CHENShih-Chieh Jang
    • G21K5/04
    • H01J37/3171H01J37/244H01J2237/24514H01J2237/24528H01J2237/24542
    • An ion implanting system includes an ion beam generator, a mass separation device, a holder device and a first detector. The ion beam generator is configured for generating a first ion beam. The mass separation device is configured for isolating a second ion beam comprising required ions from the first ion beam. The holder device is configured for holding a least one substrate. The holder device and the first detector reciprocate relative to the second ion beam along a first direction to make the substrate and the first detector pass across a projection region of the second ion beam, wherein the first detector is configured for obtaining relevant parameters of the second ion beam. The above-mentioned system is able to obtain the relevant parameters of the ion beam during ion implantation so that the system may immediately adjust the fabrication parameters to obtain better effect of ion implantation.
    • 离子注入系统包括离子束发生器,质量分离装置,保持装置和第一检测器。 离子束发生器被配置用于产生第一离子束。 质量分离装置被配置用于从第一离子束隔离包含所需离子的第二离子束。 保持器装置构造成用于保持至少一个基板。 保持器装置和第一检测器沿着第一方向相对于第二离子束往复运动以使得基板和第一检测器穿过第二离子束的突出区域,其中第一检测器被配置用于获得第二离子束的相关参数 离子束。 上述系统能够在离子注入期间获得离子束的相关参数,使得系统可以立即调整制造参数以获得更好的离子注入效果。
    • 9. 发明授权
    • Optoelectronic component with three-dimension quantum well structure and method for producing the same
    • 具有三维量子阱结构的光电子元件及其制造方法
    • US08294163B2
    • 2012-10-23
    • US12697603
    • 2010-02-01
    • Benson ChaoChung-Hua FuShih-Chieh Jang
    • Benson ChaoChung-Hua FuShih-Chieh Jang
    • H01L33/00
    • H01L21/302H01L33/00Y02P70/521
    • An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.
    • 提供具有三维量子阱结构的光电子部件及其制造方法,其中光电子部件包括衬底,第一半导体层,过渡层和量子阱结构。 第一半导体层设置在基板上。 过渡层在第一半导体层上生长,含有第一氮化物化合物半导体材料,并且至少具有纹理,其中所述纹理至少具有至少一个至少具有倾斜面的第一突起,至少第一沟槽至少具有 倾斜小面和连接在倾斜面之间的至少一个台肩面。 量子阱结构在纹理上生长并由突起,沟槽和肩面形成。