专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4920073A Selective silicidation process using a titanium nitride protective layer 失效
标题翻译：使用氮化钛保护层的选择性硅化工艺
公开(公告)号：US4920073A
公开(公告)日：1990-04-24
申请号：US350429
申请日：1989-05-11
申请人： Che-Chia Wei , Thomas E. Tang , James G. Bohlman , Monte A. Douglas
发明人： Che-Chia Wei , Thomas E. Tang , James G. Bohlman , Monte A. Douglas
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/321 , H01L21/336 , H01L23/52
CPC分类号： H01L29/665 , H01L21/3211 , Y10S148/113 , Y10S148/147
摘要： The present invention provides a method for inhibiting the oxidation of a titanium layer during the direct reaction of the titanium with exposed silicon areas of an integrated circuit. In one embodiment of the present invention, a titanium nitride layer is formed on the surface of the titanium layer in the reactor where the titanium layer is deposited. The titanium nitride layer provides an effective barrier against oxidation. Thus, the formation of titanium dioxide is inhibited. In addition, in those areas where titanium nitride local interconnect is to be formed between diffused areas, the extra thickness provided by the top titanium nitride layer adds in the integrity of the conductive layers. By conducting the silicidation in a nitride atmosphere, diffusion of the nitride from the titanium nitride layer into the titanium layer and substitution of those lost nitrogen atoms by the atmosphere occurs thus providing a blocking layer for the formation of titanium silicide shorts.
摘要翻译：本发明提供了在钛与集成电路的暴露的硅区域的直接反应期间抑制钛层的氧化的方法。在本发明的一个实施例中，在沉积钛层的反应器中的钛层的表面上形成氮化钛层。氮化钛层提供了抗氧化的有效屏障。因此，二氧化钛的形成被抑制。此外，在要在扩散区域之间形成氮化钛局部互连的区域中，由顶部氮化钛层提供的额外的厚度增加了导电层的完整性。通过在氮化物气氛中进行硅化，氮化物从钛氮化物层扩散到钛层中，并且由于大气中的那些失去的氮原子而被发生，从而提供用于形成硅化钛短路的阻挡层。

2. 发明授权

US4872938A Processing apparatus 失效
标题翻译：处理装置
公开(公告)号：US4872938A
公开(公告)日：1989-10-10
申请号：US188128
申请日：1988-04-25
申请人： Cecil J. Davis , Joseph V. Abernathy , Robert T. Matthews , Randall C. Hildenbrand , Bruce Simpson , John I. Jones , Lee M. Loewenstein , James G. Bohlman
发明人： Cecil J. Davis , Joseph V. Abernathy , Robert T. Matthews , Randall C. Hildenbrand , Bruce Simpson , John I. Jones , Lee M. Loewenstein , James G. Bohlman
IPC分类号： H01L21/00 , H01L21/677
CPC分类号： H01L21/67748 , H01L21/67115 , H01L21/67751 , H01L21/67796
摘要： A process module which is compatible with a system using vacuum wafer transport in which wafers are generally transported and processed in a face down position under vacuum, and which also includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. In the more nearly vertical position, the wafer can be processed by a top process module, which may be, e.g., a sputter system, an implanter, or an inspection module. Another process module is included in the bottom part of the chamber, so that the wafer can be processed by the lower process module while in its substantially horizontal position and processed by the upper process module when it is in its more nearly vertical position. This is especially advantageous when the lower process module is a plasma cleanup module and the top module is a deposition module.
摘要翻译：一种与使用真空晶片传输的系统兼容的处理模块，其中晶片通常在真空下以正面朝下的位置运输和处理，并且还包括另外的晶片移动，其中在晶片已经朝下放置之后，可以将其固定在基座上的位置，基座从其大致水平位置旋转到更接近垂直的位置。在更接近垂直的位置，晶片可以由顶部工艺模块来处理，顶部工艺模块可以是例如溅射系统，注入机或检查模块。另一个处理模块被包括在腔室的底部，使得晶片在处于其基本上水平的位置时可被下部处理模块处理，并且当其处于更接近垂直的位置时由上部处理模块处理。当下部工艺模块是等离子体清理模块并且顶部模块是沉积模块时，这是特别有利的。

3. 发明授权

US4888820A Stacked insulating film including yttrium oxide 失效
标题翻译：叠层绝缘膜包括氧化钇
公开(公告)号：US4888820A
公开(公告)日：1989-12-19
申请号：US280778
申请日：1988-12-06
申请人： Ih-Chin Chen , Bing W. Shen , James G. Bohlman , Hun-Lian Tsai
发明人： Ih-Chin Chen , Bing W. Shen , James G. Bohlman , Hun-Lian Tsai
IPC分类号： H01L27/04 , H01G4/20 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/92
CPC分类号： H01L27/10805 , H01G4/20 , H01L28/40 , Y10T29/435
摘要： A capacitor, and a method for making the same, are disclosed, wherein one plate of the capacitor comprises silicon. The dielectric material of the capacitor includes a silicon nitride layer disposed adjacent the silicon plate, and a layer of yttrium oxide disposed thereover. The second plate of the capacitor is formed over the yttrium oxide layer. The silicon nitride provides a barrier to the diffusion of silicon into the yttrium oxide film if the structure is heated, providing for a high dielectric constant capacitor dielectric which has improved leakage characteristics.

4. 发明授权

US4836905A Processing apparatus 失效
标题翻译：处理装置
公开(公告)号：US4836905A
公开(公告)日：1989-06-06
申请号：US75018
申请日：1987-07-16
申请人： Cecil J. Davis , Joseph V. Abernathy , Robert T. Matthews , Randall C. Hildenbrand , Bruce Simpson , James G. Bohlman , Lee M. Loewenstein , John I. Jones
发明人： Cecil J. Davis , Joseph V. Abernathy , Robert T. Matthews , Randall C. Hildenbrand , Bruce Simpson , James G. Bohlman , Lee M. Loewenstein , John I. Jones
IPC分类号： C23C14/56 , C23F4/00 , H01L21/00 , H01L21/677
CPC分类号： H01L21/67748 , C23C14/50 , C23C14/568 , C23F4/00 , H01L21/67115 , H01L21/67751 , Y10S414/136 , Y10S414/137
摘要： A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. While the wafer is in the more nearly vertical position, sputter deposition may be performed. In situ or remote plasma capability is usefully provided in the bottom part of the chamber, so that a dry deglaze or cleanup step can be performed while the wafer is in its substantially horizontal position, followed by a sputter deposition after the wafer has been moved to its more nearly vertical position.
摘要翻译：允许溅射沉积并与真空处理系统相容的处理装置和方法，其中晶片在面朝下的位置被大量地转移和处理。这包括另外的晶片运动，其中在将晶片面朝下放置之后，可将其固定在基座上的位置，基座从其近似水平的位置旋转到更接近垂直的位置。当晶片处于更接近垂直的位置时，可以进行溅射沉积。原位或远程等离子体能力有效地提供在腔室的底部，从而可以在晶片处于其基本水平的位置时进行干燥的消光或清洁步骤，接着在晶片移动到它更接近垂直的位置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式