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1. 发明申请

US20060175601A1 Nanoscale wires and related devices 审中-公开
公开(公告)号：US20060175601A1
公开(公告)日：2006-08-10
申请号：US11172408
申请日：2005-06-30
申请人： Charles Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David Smith , Deli Wang , Zhaohui Zhong
发明人： Charles Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David Smith , Deli Wang , Zhaohui Zhong
IPC分类号： H01L31/109
CPC分类号： C30B29/60 , B82Y10/00 , B82Y15/00 , B82Y30/00 , G01N27/4146 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/1606 , H01L29/2003 , H01L29/267 , H01L29/73 , H01L31/0352 , H01L31/08 , H01L33/18 , H01L33/20 , H01L51/0048
摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

2. 发明申请

US20070281156A1 Nanoscale wires and related devices 审中-公开
公开(公告)号：US20070281156A1
公开(公告)日：2007-12-06
申请号：US11386080
申请日：2006-03-21
申请人： Charles Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David Smith , Deli Wang , Zhaohui Zhong
发明人： Charles Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David Smith , Deli Wang , Zhaohui Zhong
IPC分类号： D02G3/00
CPC分类号： G11C13/025 , B82Y10/00 , B82Y15/00 , B82Y30/00 , C30B11/00 , C30B25/00 , C30B25/005 , C30B29/60 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C11/56 , G11C13/0014 , G11C13/0019 , G11C13/04 , G11C2213/17 , G11C2213/18 , G11C2213/77 , G11C2213/81 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02557 , H01L21/0256 , H01L21/02603 , H01L21/02617 , H01L21/02628 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L27/092 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/1606 , H01L29/2003 , H01L29/207 , H01L29/267 , H01L29/73 , H01L29/7781 , H01L29/78696 , H01L29/861 , H01L29/868 , H01L31/0352 , H01L31/08 , H01L33/18 , H01L51/0048 , H01L51/0595 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , Y02E10/549 , Y10S977/936 , Y10S977/938 , Y10S977/958 , Y10T428/2929 , Y10T428/298 , H01L2924/00
摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

3. 发明申请

US20100155698A1 Nanoscale wires and related devices 审中-公开
标题翻译：纳米线及相关设备
公开(公告)号：US20100155698A1
公开(公告)日：2010-06-24
申请号：US12459177
申请日：2009-06-26
申请人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
发明人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： C30B29/60 , B82Y10/00 , B82Y15/00 , B82Y30/00 , G01N27/4146 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/1606 , H01L29/2003 , H01L29/267 , H01L29/73 , H01L31/0352 , H01L31/08 , H01L33/18 , H01L33/20 , H01L51/0048
摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.
摘要翻译：本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。在一些情况下，制品可以是单晶。纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。

4. 发明授权

US07301199B2 Nanoscale wires and related devices 有权
标题翻译：纳米线及相关设备
公开(公告)号：US07301199B2
公开(公告)日：2007-11-27
申请号：US10196337
申请日：2002-07-16
申请人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
发明人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
IPC分类号： H01L29/76 , H01L29/94 , H01L29/06
CPC分类号： G11C13/025 , B82Y10/00 , B82Y15/00 , B82Y30/00 , C30B11/00 , C30B25/00 , C30B25/005 , C30B29/60 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C11/56 , G11C13/0014 , G11C13/0019 , G11C13/04 , G11C2213/17 , G11C2213/18 , G11C2213/77 , G11C2213/81 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02557 , H01L21/0256 , H01L21/02603 , H01L21/02617 , H01L21/02628 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L27/092 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/1606 , H01L29/2003 , H01L29/207 , H01L29/267 , H01L29/73 , H01L29/7781 , H01L29/78696 , H01L29/861 , H01L29/868 , H01L31/0352 , H01L31/08 , H01L33/18 , H01L51/0048 , H01L51/0595 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , Y02E10/549 , Y10S977/936 , Y10S977/938 , Y10S977/958 , Y10T428/2929 , Y10T428/298 , H01L2924/00
摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.
摘要翻译：本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。在一些情况下，制品可以是单晶。纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。

5. 发明申请

US20090057650A1 Nanoscale wires and related devices 审中-公开
标题翻译：纳米线及相关设备
公开(公告)号：US20090057650A1
公开(公告)日：2009-03-05
申请号：US12072844
申请日：2008-02-27
申请人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
发明人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
IPC分类号： H01L29/66
CPC分类号： C30B29/60 , B82Y10/00 , B82Y15/00 , B82Y30/00 , G01N27/4146 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/1606 , H01L29/2003 , H01L29/267 , H01L29/73 , H01L31/0352 , H01L31/08 , H01L33/18 , H01L33/20 , H01L51/0048
摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.
摘要翻译：本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。在一些情况下，制品可以是单晶。纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。

6. 发明授权

US09793685B2 Junctionless semiconductor light emitting devices 有权
公开(公告)号：US09793685B2
公开(公告)日：2017-10-17
申请号：US14117560
申请日：2012-05-24
申请人： Deli Wang , Muchuan Yang , Chun Li
发明人： Deli Wang , Muchuan Yang , Chun Li
IPC分类号： H01L33/00 , H01S5/34 , H01J63/06
CPC分类号： H01S5/3401 , H01J63/06 , H01L33/0004
摘要： A junctionless light emitting device comprises a field emitter cathode, and a light emitting semiconductor material sandwiched between an ohmic contact (OC) that faces the injected electrons and a Schottky contact (SC). The field emitter cathode is configured to inject electrons into the ohmic contact.

7. 发明授权

US09381355B2 Ultra-high photosensitivity vertical nanowire arrays for retinal prosthesis 有权
标题翻译：用于视网膜假体的超高光敏性垂直纳米线阵列
公开(公告)号：US09381355B2
公开(公告)日：2016-07-05
申请号：US13806089
申请日：2011-06-21
申请人： Massoud L. Khraiche , Gabriel Silva , Gert Cauwenberghs , Yu-Hwa Lo , Deli Wang , William Freeman
发明人： Massoud L. Khraiche , Gabriel Silva , Gert Cauwenberghs , Yu-Hwa Lo , Deli Wang , William Freeman
IPC分类号： A61N1/36 , A61N1/05 , A61F2/14 , A61L27/18 , H01L31/0352
CPC分类号： A61N1/36046 , A61F2/14 , A61L27/18 , A61L2400/12 , A61L2430/16 , A61N1/0543 , H01L31/035227 , H01L31/035236 , C08L83/04 , C08L65/04
摘要： A prosthetic retina for implantation in an eye having a defective retina is formed from an array of nanowires having a predetermined spatial distribution, density, size and shape implanted in close proximity to the retina. An electrical conductor is formed at a first end of all nanowires in the array of nanowires and placed in contact with a bias source which biases the array. A plurality of electrodes is located on a second end of each of one nanowire or a bundle of nanowires in the array. Each nanowire produces a photocurrent at a corresponding electrode in response to detection of light impinging on the array of nanowires and the photocurrent stimulates one or more neurons adapted for visual perception. In the preferred embodiment, the predetermined spatial distribution mimics a distribution of rods and cones in a normal eye.
摘要翻译：用于植入具有缺陷视网膜的眼睛中的假视网膜由具有植入在视网膜附近的预定空间分布，密度，大小和形状的纳米线阵列形成。电导体形成在纳米线阵列中的所有纳米线的第一端，并与偏置源接触，偏压源偏置阵列。多个电极位于阵列中的一个纳米线或纳米线束中的每一个的第二端上。每个纳米线响应于入射到纳米线阵列上的光而在对应的电极处产生光电流，并且光电流刺激一个或多个适于视觉感知的神经元。在优选实施例中，预定空间分布模拟正常眼睛中的棒和锥体的分布。

8. 发明申请

US20110297846A1 ELECTRON INJECTION NANOSTRUCTURED SEMICONDUCTOR MATERIAL ANODE ELECTROLUMINESCENCE METHOD AND DEVICE 有权
标题翻译：电子注入纳米结构半导体材料阳极电致发光方法和器件
公开(公告)号：US20110297846A1
公开(公告)日：2011-12-08
申请号：US13132297
申请日：2009-12-04
申请人： Deli Wang
发明人： Deli Wang
IPC分类号： G21H3/02 , H01L33/04 , B82Y40/00
CPC分类号： H01J63/06 , H01L33/502
摘要： Embodiments of the invention include methods and devices for producing light by injecting electrons from field emission cathode across a gap into nanostructured semiconductor materials, electrons issue from a separate field emitter cathode and are accelerated by a voltage across a gap towards the surface of the nanostructured material that forms part of the anode. At the nanostructure material, the electrons undergo electron-hole (e-h) recombination resulting in electroluminescent (EL) emission. In a preferred embodiment lighting device, a vacuum enclosure houses a field emitter cathode. The vacuum enclosure also houses an anode that is separated by a gap from said cathode and disposed to receive electrons emitted from the cathode. The anode includes semiconductor light emitting nano structures that accept injection of electrons from the cathode and generate photons in response to the injection of electrons. External electrode contacts permit application of a voltage differential across the anode and cathode to stimulate electron emissions from the cathode and resultant photon emissions from the semiconductor light emitting nanostructures of the anode. Embodiments of the invention also include the usage of nanostructured semiconductor materials as phosphors for conventional planar LED and nanowire array light emitting diodes and CFL. For the use in conventional planar LEDs, the nanostructures may take the form of quantum dots, nanotubes, branched tree-like nanostructure, nanoflower, tetrapods, tripods, axial heterostructures nanowires hetero structures.
摘要翻译：本发明的实施例包括通过从场发射阴极将电子从间隙注入到纳米结构化半导体材料中来产生光的方法和装置，电子从单独的场发射极阴极发出并且通过跨越纳米结构材料表面的间隙的电压加速形成阳极的一部分。在纳米结构材料上，电子经历电子 - 空穴（e-h）复合，产生电致发光（EL）发射。在优选实施例的照明装置中，真空外壳容纳场致发射极阴极。真空外壳还容纳阳极，该阴极与所述阴极间隔开并被设置成接收从阴极发射的电子。阳极包括接受从阴极注入电子并响应于电子注入而产生光子的半导体发光纳米结构。外部电极触点允许在阳极和阴极之间施加电压差以刺激来自阴极的电子发射以及来自阳极的半导体发光纳米结构的光子发射。本发明的实施例还包括纳米结构半导体材料作为用于常规平面LED和纳米线阵列发光二极管和CFL的磷光体的用途。对于在常规平面LED中的使用，纳米结构可以采取量子点，纳米管，支化树状纳米结构，纳米花，四脚架，三脚架，轴向异质结构纳米线异质结构的形式。

9. 发明授权

US08440997B2 Nanowire photodetector and image sensor with internal gain 有权
公开(公告)号：US08440997B2
公开(公告)日：2013-05-14
申请号：US12528701
申请日：2008-02-26
申请人： Deli Wang , Cesare Soci , Yu-Hwa Lo , Arthur Zhang , David Aplin , Lingquan Wang , Shadi Dayeh , Xin Yu Bao
发明人： Deli Wang , Cesare Soci , Yu-Hwa Lo , Arthur Zhang , David Aplin , Lingquan Wang , Shadi Dayeh , Xin Yu Bao
IPC分类号： H01L29/06
CPC分类号： H01L31/035227 , B82Y20/00 , H01L27/14643 , H01L31/035236
摘要： A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to inhibits photo-carrier recombination, thus enhancing the photocurrent response. Circuits of 1D nanowire include groups of photodetectors addressed by their individual 1D nanowire electrode contacts. Placement of 1D nanostructures is accomplished with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of 1D nanostructures. The 1D nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the 1D nanostructures in predetermined, registered positions on the substrate.

10. 发明申请

US20100295019A1 NANOWIRE PHOTODETECTOR AND IMAGE SENSOR WITH INTERNAL GAIN 有权
标题翻译： NANOWIRE光电和图像传感器内部增益
公开(公告)号：US20100295019A1
公开(公告)日：2010-11-25
申请号：US12528701
申请日：2008-02-26
申请人： Deli Wang , Cesare Soci , Yu-Hwa Lo , Arthur Zhang , David Aplin , Lingquan Wang , Shadi Dayeh , Xin Yu Bao
发明人： Deli Wang , Cesare Soci , Yu-Hwa Lo , Arthur Zhang , David Aplin , Lingquan Wang , Shadi Dayeh , Xin Yu Bao
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L31/035227 , B82Y20/00 , H01L27/14643 , H01L31/035236
摘要： A practical ID nanowire photodetector with high gain that can be controlled by a radial electric field established in the ID nanowire. A ID nanowire photodetector device of the invention includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to the nanowire inhibits photo-carrier recombination, thus enhancing the photocurrent response. The invention further provides circuits of ID nanowire photodetectors, with groups of photodetectors addressed by their individual ID nanowires electrode contacts. The invention also provides a method for placement of ID nanostructures, including nanowires, with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of ID nanostructures. The ID nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the ID nanostructures in predetermined, registered positions on the substrate.
摘要翻译：具有高增益的实际的ID纳米线光电探测器，可以通过在ID纳米线中建立的径向电场来控制。本发明的ID纳米线光电探测器器件包括一个纳米线，该纳米线被电极单独接触，用于施加驱动光电流的纵向电场。对纳米线的固有径向电场抑制光载流子复合，从而增强光电流响应。本发明进一步提供ID纳米线光电检测器的电路，其具有由其各自的ID纳米线电极接触器寻址的光电探测器组。本发明还提供了一种用于将ID纳米结构（包括纳米线）放置在衬底上的方法。用诸如光致抗蚀剂的材料对衬底进行图案化，并且在图案化材料中在预定位置形成沟槽以放置ID纳米结构。将ID纳米结构在液体悬浮液中排列，然后从液体悬浮液转移到沟槽中。去除图案形成材料将ID纳米结构放置在基板上的预定的注册位置。

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