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1. 发明授权

US06643718B1 Method and apparatus for controlling order dependency of items in a multiple FIFO queue structure 有权
标题翻译：用于控制多FIFO队列结构中项目的顺序依赖性的方法和装置
公开(公告)号：US06643718B1
公开(公告)日：2003-11-04
申请号：US09621070
申请日：2000-07-21
申请人： Chao-Yu Chen , Hui-Neng Chang , Sui-His Chu
发明人： Chao-Yu Chen , Hui-Neng Chang , Sui-His Chu
IPC分类号： G06F9315
CPC分类号： G06F7/00 , G06F9/52 , G06F9/522
摘要： A barrier control scheme controls the order dependency of items in a multiple FIFO queue structure. The barrier control scheme includes a cycle ID generator, a barrier bit/barrier ID generator and a cycle ID and barrier ID comparator. Each incoming item to the FIFOs is assigned a cycle ID. If an incoming item of a first FIFO has order dependency on items of a second FIFO, a barrier bit is set and a barrier ID is determined and generated by the barrier bit/barrier ID generator. The barrier bit and barrier ID are inserted in the first FIFO along with other fields of the incoming item. When an item is to be consumed, the cycle ID and barrier ID comparator compares its barrier ID and the cycle IDs of items in the second FIFO. The item to be consumed is blocked until all items on which the item is dependent are consumed in the second FIFO.
摘要翻译：障碍控制方案控制多FIFO队列结构中项目的顺序依赖性。屏障控制方案包括循环ID发生器，屏障位/屏障ID发生器和周期ID和屏障ID比较器。每个进入FIFO的输入项都被分配一个循环ID。如果第一FIFO的输入项目具有与第二FIFO的项目有顺序依赖关系，则设置障碍位并且屏障ID /屏障ID发生器确定并产生屏障ID。屏障位和屏障ID与输入项目的其他字段一起插入第一个FIFO。当一个物品被消耗时，循环ID和屏障ID比较器比较其屏障ID和第二个FIFO中项目的循环ID。要消费的项目被阻止，直到所有项目依赖的项目在第二个FIFO中被消耗。

2. 发明授权

US06549991B1 Pipelined SDRAM memory controller to optimize bus utilization 有权
标题翻译：流水线SDRAM内存控制器，优化总线利用率
公开(公告)号：US06549991B1
公开(公告)日：2003-04-15
申请号：US09653516
申请日：2000-08-31
申请人： Po-Wei Huang , Ming-Hsien Lee , Hui-Neng Chang , Chao-Yu Chen , Sui-Hsin Chu
发明人： Po-Wei Huang , Ming-Hsien Lee , Hui-Neng Chang , Chao-Yu Chen , Sui-Hsin Chu
IPC分类号： G06F1200
CPC分类号： G06F13/1626 , G06F13/1642
摘要： All memory commands are classified into two categories: background commands and foreground commands, depending on whether they are data related or not. The pointed background command and foreground commands are issued onto the DRAM bus at the earliest time when the required constrains are met. The background and foreground FSM controllers work in a pipelined or overlapped manner.
摘要翻译：所有存储器命令分为两类：后台命令和前台命令，具体取决于它们是否与数据有关。指定的背景命令和前景命令在满足所需约束的最早时刻被发布到DRAM总线上。背景和前台FSM控制器以流水线或重叠的方式工作。

3. 发明申请

US20090091996A1 Solid state semiconductor storage device with temperature control function, application system thereof and control element thereof 有权
标题翻译：具有温度控制功能的固态半导体存储装置，其应用系统及其控制元件
公开(公告)号：US20090091996A1
公开(公告)日：2009-04-09
申请号：US12076672
申请日：2008-03-21
申请人： Ming-Dar Chen , Chuan-Sheng Lin , Hui-Neng Chang , Hsiang-An Hsieh
发明人： Ming-Dar Chen , Chuan-Sheng Lin , Hui-Neng Chang , Hsiang-An Hsieh
IPC分类号： G11C7/04
CPC分类号： G11C7/04
摘要： A solid state semiconductor storage device with temperature control function comprises a non-volatile memory unit, a temperature sensing element, and a control unit. The temperature sensing element is used for sensing the operation temperature of the solid state semiconductor storage device so as to provide a temperature sensing signal to the control unit. According to the temperature sensing signal, the control unit controls the operation mode of the solid state semiconductor storage device for achieving the function of temperature control.
摘要翻译：具有温度控制功能的固态半导体存储装置包括非易失性存储单元，温度检测元件和控制单元。温度感测元件用于感测固态半导体存储装置的工作温度，以向控制单元提供温度感测信号。根据温度检测信号，控制单元控制用于实现温度控制功能的固态半导体存储装置的操作模式。

4. 发明授权

US08307163B2 Hybrid density memory storage device 有权
标题翻译：混合密度存储器
公开(公告)号：US08307163B2
公开(公告)日：2012-11-06
申请号：US12050593
申请日：2008-03-18
申请人： Ming-Dar Chen , Chuan-Sheng Lin , Hui-Neng Chang , Hsiang-An Hsieh
发明人： Ming-Dar Chen , Chuan-Sheng Lin , Hui-Neng Chang , Hsiang-An Hsieh
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7208 , G06F2212/7211 , G11C11/56 , G11C2211/5641
摘要： The present invention discloses a hybrid density memory storage device configured to store data responsive to a host and a file system thereof. The hybrid density memory storage device includes a non-volatile memory, a hot data buffer and a control unit. The non-volatile memory includes a high density storage space and a low density storage space. The control unit is coupled between the host, the non-volatile memory, and the hot data buffer. The control unit has a hot list used for recording a plurality of logical locations of hot data, and the control unit is capable of accessing data in/out the hot data buffer in accordance with the hot list.
摘要翻译：本发明公开了一种混合密度存储器存储装置，被配置为存储响应于主机及其文件系统的数据。混合密度存储器存储装置包括非易失性存储器，热数据缓冲器和控制单元。非易失性存储器包括高密度存储空间和低密度存储空间。控制单元耦合在主机，非易失性存储器和热数据缓冲器之间。控制单元具有用于记录热数据的多个逻辑位置的热列表，并且控制单元能够根据热列表访问/输出热数据缓冲器中的数据。

5. 发明授权

US08418030B2 Storage system with data recovery function and method thereof 有权
标题翻译：具有数据恢复功能的存储系统及其方法
公开(公告)号：US08418030B2
公开(公告)日：2013-04-09
申请号：US12243472
申请日：2008-10-01
申请人： Ming-Dar Chen , Chuan-Sheng Lin , Hsiang-An Hsieh , Hui-Neng Chang
发明人： Ming-Dar Chen , Chuan-Sheng Lin , Hsiang-An Hsieh , Hui-Neng Chang
IPC分类号： G11C29/00
CPC分类号： G11C29/42 , G06F11/1068 , G11C29/44 , G11C2029/0405 , G11C2029/3602
摘要： A storage system with a data recovery function and its method reduce errors in a storage medium to a recoverable range of a general ECC function by repeating a testing and recovery procedure for one or more times to assure the accuracy of reading data and enhance the data reliability effectively. The data recovery procedure includes the steps of providing test data by a test data generator of the storage system, writing the test data into a memory block where error data is found, finding an error bit by reading the test data, reducing the error to a recoverable range of the ECC technique by the recovery procedure. If the error bit cannot be found or reduced to a recoverable range of the ECC technique within an upper limit of the number of tests, the memory block is marked as bad.
摘要翻译：具有数据恢复功能的存储系统及其方法通过重复一次或多次的测试和恢复过程将存储介质中的错误减少到通用ECC功能的可恢复范围，以确保读取数据的准确性并提高数据可靠性有效。数据恢复过程包括以下步骤：由存储系统的测试数据发生器提供测试数据，将测试数据写入到发现错误数据的存储器块中，通过读取测试数据找到错误位，将错误减少到通过恢复程序可以恢复ECC技术的范围。如果错误位在测试次数的上限内不能被发现或缩小到ECC技术的可恢复范围，则存储块被标记为坏。

6. 发明授权

US07840836B2 Storage device and data writing method utilizing the same 失效
标题翻译：存储设备和数据写入方法
公开(公告)号：US07840836B2
公开(公告)日：2010-11-23
申请号：US11878957
申请日：2007-07-30
申请人： Hui-Neng Chang
发明人： Hui-Neng Chang
IPC分类号： G06F11/00
CPC分类号： G06F12/0246 , G06F11/2094 , G06F2212/1036 , G11C29/76
摘要： A storage device capable of meeting the reliability has a storage capacity and the reliability of the storage device is defined. The storage device includes at least one first storage unit, at least one second storage unit, and a control unit. The first storage unit forms the storage capacity of the storage device. The second storage unit is allocated to form a spare capacity according to the storage capacity and the reliability. The second storage unit replaces the bad blocks in the first storage unit. The control unit controls the first storage unit and the second storage unit to transmit and convert the data with an application system. Thereby, by allocating the spare capacity of the second storage unit, the different reliability requirement is met, and the storage capacity of the first storage unit is unaffected.
摘要翻译：能够满足可靠性的存储装置具有存储容量，并且定义了存储装置的可靠性。存储装置包括至少一个第一存储单元，至少一个第二存储单元和控制单元。第一存储单元形成存储设备的存储容量。根据存储容量和可靠性，分配第二存储单元以形成备用容量。第二存储单元替换第一存储单元中的坏块。控制单元控制第一存储单元和第二存储单元，以便与应用系统一起发送和转换数据。因此，通过分配第二存储单元的备用容量，满足不同的可靠性要求，并且第一存储单元的存储容量不受影响。

7. 发明授权

US07742353B2 Solid state semiconductor storage device with temperature control function, application system thereof and control element thereof 有权
标题翻译：具有温度控制功能的固态半导体存储装置，其应用系统及其控制元件
公开(公告)号：US07742353B2
公开(公告)日：2010-06-22
申请号：US12076672
申请日：2008-03-21
申请人： Ming-Dar Chen , Chuan-Sheng Lin , Hui-Neng Chang , Hsiang-An Hsieh
发明人： Ming-Dar Chen , Chuan-Sheng Lin , Hui-Neng Chang , Hsiang-An Hsieh
IPC分类号： G11C11/34
CPC分类号： G11C7/04
摘要： A solid state semiconductor storage device with temperature control function comprises a non-volatile memory unit, a temperature sensing element, and a control unit. The temperature sensing element is used for sensing the operation temperature of the solid state semiconductor storage device so as to provide a temperature sensing signal to the control unit. According to the temperature sensing signal, the control unit controls the operation mode of the solid state semiconductor storage device for achieving the function of temperature control.
摘要翻译：具有温度控制功能的固态半导体存储装置包括非易失性存储单元，温度检测元件和控制单元。温度感测元件用于感测固态半导体存储装置的工作温度，以向控制单元提供温度感测信号。根据温度检测信号，控制单元控制用于实现温度控制功能的固态半导体存储装置的操作模式。

8. 发明申请

US20090282305A1 STORAGE SYSTEM WITH DATA RECOVERY FUNCTION AND METHOD THEREOF 有权
标题翻译：具有数据恢复功能的存储系统及其方法
公开(公告)号：US20090282305A1
公开(公告)日：2009-11-12
申请号：US12243472
申请日：2008-10-01
申请人： Ming-Dar Chen , Chuan-Sheng Lin , Hsiang-An Hsieh , Hui-Neng Chang
发明人： Ming-Dar Chen , Chuan-Sheng Lin , Hsiang-An Hsieh , Hui-Neng Chang
IPC分类号： G06F11/26
CPC分类号： G11C29/42 , G06F11/1068 , G11C29/44 , G11C2029/0405 , G11C2029/3602
摘要： A storage system with a data recovery function and its method reduce errors in a storage medium to a recoverable range of a general ECC function by repeating a testing and recovery procedure for one or more times to assure the accuracy of reading data and enhance the data reliability effectively. The data recovery procedure includes the steps of providing test data by a test data generator of the storage system, writing the test data into a memory block where error data is found, finding an error bit by reading the test data, reducing the error to a recoverable range of the ECC technique by the recovery procedure. If the error bit cannot be found or reduced to a recoverable range of the ECC technique within an upper limit of the number of tests, the memory block is marked as bad.
摘要翻译：具有数据恢复功能的存储系统及其方法通过重复一次或多次的测试和恢复过程将存储介质中的错误减少到通用ECC功能的可恢复范围，以确保读取数据的准确性并提高数据可靠性有效。数据恢复过程包括以下步骤：由存储系统的测试数据发生器提供测试数据，将测试数据写入到发现错误数据的存储器块中，通过读取测试数据找到错误位，将错误减少到通过恢复程序可以恢复ECC技术的范围。如果错误位在测试次数的上限内不能被发现或缩小到ECC技术的可恢复范围，则存储块被标记为坏。

9. 发明申请

US20080215911A1 Storage device capable of meeting the reliability and a building and data writing method thereof 失效
标题翻译：能够满足可靠性的存储装置及其建筑物和数据写入方法
公开(公告)号：US20080215911A1
公开(公告)日：2008-09-04
申请号：US11878957
申请日：2007-07-30
申请人： Hui-Neng Chang
发明人： Hui-Neng Chang
IPC分类号： G06F11/07
CPC分类号： G06F12/0246 , G06F11/2094 , G06F2212/1036 , G11C29/76
摘要： A storage device capable of meeting the reliability has a storage capacity and the reliability of the storage device is defined. The storage device includes at least one first storage unit, at least one second storage unit, and a control unit. The first storage unit forms the storage capacity of the storage device. The second storage unit is allocated to form a spare capacity according to the storage capacity and the reliability. The second storage unit replaces the bad blocks in the first storage unit. The control unit controls the first storage unit and the second storage unit to transmit and convert the data with an application system. Thereby, by allocating the spare capacity of the second storage unit, the different reliability requirement is met, and the storage capacity of the first storage unit is unaffected.
摘要翻译：能够满足可靠性的存储装置具有存储容量，并且定义了存储装置的可靠性。存储装置包括至少一个第一存储单元，至少一个第二存储单元和控制单元。第一存储单元形成存储设备的存储容量。根据存储容量和可靠性，分配第二存储单元以形成备用容量。第二存储单元替换第一存储单元中的坏块。控制单元控制第一存储单元和第二存储单元，以便与应用系统一起发送和转换数据。因此，通过分配第二存储单元的备用容量，满足不同的可靠性要求，并且第一存储单元的存储容量不受影响。

10. 发明授权

US08291156B2 Memory system having hybrid density memory and methods for wear-leveling management and file distribution management thereof 有权
标题翻译：具有混合密度存储器的存储器系统及其磨损均衡管理及其文件分发管理的方法
公开(公告)号：US08291156B2
公开(公告)日：2012-10-16
申请号：US13159784
申请日：2011-06-14
申请人： Ming-Dar Chen , Chuan-Sheng Lin , Hui-Neng Chang , Hsiang-An Hsieh
发明人： Ming-Dar Chen , Chuan-Sheng Lin , Hui-Neng Chang , Hsiang-An Hsieh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7208 , G06F2212/7211 , G11C11/56 , G11C2211/5641
摘要： The present invention discloses a memory system having a hybrid density memory. The memory system includes a plurality of storage spaces whereby the storage spaces have respective levels of endurance and each storage space has a plurality of blocks and pre-determined weighting factors corresponding to the levels of endurance of the storage spaces. After executing a command of erasing a specific block, the system records the erase in accordance with the weighting factor of the storage space to which the specific block belongs. Whereby, the erase counts of all the blocks of different storage spaces are able to reach respective levels of endurance as simultaneously as possible.
摘要翻译：本发明公开了一种具有混合密度存储器的存储器系统。存储器系统包括多个存储空间，由此存储空间具有相应的耐久级别，并且每个存储空间具有多个块和与存储空间的耐久水平相对应的预定加权因子。在执行擦除特定块的命令之后，系统根据特定块所属的存储空间的权重因子记录擦除。因此，不同存储空间的所有块的擦除计数能够尽可能同时达到相应的耐久水平。

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