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1. 发明授权

US08563989B2 Light emitting device with an electrode having an dual metal alloy 有权
标题翻译：具有具有双金属合金的电极的发光器件
公开(公告)号：US08563989B2
公开(公告)日：2013-10-22
申请号：US13402882
申请日：2012-02-23
申请人： Chao-Shun Yang , Chen-Ming Hu
发明人： Chao-Shun Yang , Chen-Ming Hu
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/62 , H01L33/36 , H01L51/0021 , H01L51/5218 , H01L2251/5315 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer.
摘要翻译：提供了一种发光器件的制造方法。在基板上形成第一电极。第一电极包括图案化的导电层，并且图案化的导电层包括含有第一金属和第二金属的合金。在第一电极上执行退火处理，以至少在第一电极的侧表面上形成钝化层。钝化层包括第二金属的化合物。在第一电极上形成发光层。在发光层上形成第二电极。

2. 发明申请

US20130153949A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20130153949A1
公开(公告)日：2013-06-20
申请号：US13402882
申请日：2012-02-23
申请人： Chao-Shun Yang , Chen-Ming Hu
发明人： Chao-Shun Yang , Chen-Ming Hu
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L33/36 , H01L51/0021 , H01L51/5218 , H01L2251/5315 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer.
摘要翻译：提供了一种发光器件的制造方法。在基板上形成第一电极。第一电极包括图案化的导电层，并且图案化的导电层包括含有第一金属和第二金属的合金。在第一电极上执行退火处理，以至少在第一电极的侧表面上形成钝化层。钝化层包括第二金属的化合物。在第一电极上形成发光层。在发光层上形成第二电极。

3. 发明授权

US08759832B2 Semiconductor device and electroluminescent device and method of making the same 有权
标题翻译：半导体器件和电致发光器件及其制造方法
公开(公告)号：US08759832B2
公开(公告)日：2014-06-24
申请号：US13423288
申请日：2012-03-19
申请人： Chao-Shun Yang , Hsing-Hung Hsieh
发明人： Chao-Shun Yang , Hsing-Hung Hsieh
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L27/1251 , H01L27/0688
摘要： A semiconductor device, disposed on a substrate, includes a first channel layer, a patterned doped layer, a gate insulating layer, a conducting gate electrode, a second channel layer, a first electrode and a second electrode, and a third electrode and a fourth electrode. The first channel layer is disposed on the substrate and in a first region. The patterned doped layer includes a doped gate electrode disposed in a second region, and two contact electrodes electrically connected to two sides of the first channel layer, respectively. The conducting gate electrode is disposed on the gate insulating layer in the first region. The second channel layer is disposed on the gate insulating layer in the second region. The first electrode and the second electrode are electrically connected to the contact electrodes, respectively. The third electrode and the fourth electrode are electrically connected to two sides of the second channel layer, respectively.
摘要翻译：设置在基板上的半导体器件包括第一沟道层，图案化掺杂层，栅极绝缘层，导电栅电极，第二沟道层，第一电极和第二电极，以及第三电极和第四电极电极。第一沟道层设置在衬底上并在第一区域中。图案化掺杂层包括设置在第二区域中的掺杂栅电极和分别电连接到第一沟道层两侧的两个接触电极。导电栅电极设置在第一区域中的栅极绝缘层上。第二沟道层设置在第二区域中的栅绝缘层上。第一电极和第二电极分别电连接到接触电极。第三电极和第四电极分别电连接到第二沟道层的两侧。

4. 发明授权

US08534846B2 Projection apparatus and method for adjusting a driving voltage of the projection apparatus 有权
标题翻译：用于调整投影装置的驱动电压的投影装置和方法
公开(公告)号：US08534846B2
公开(公告)日：2013-09-17
申请号：US12787896
申请日：2010-05-26
申请人： Yao-Hsien Huang , Chao-Shun Yang
发明人： Yao-Hsien Huang , Chao-Shun Yang
IPC分类号： G03B21/18 , G03B21/26 , H05B41/16 , H05B41/24
CPC分类号： G03B21/16 , H04N9/3144
摘要： A projection apparatus and a method for adjusting a driving voltage of the projection apparatus are provided. The projection apparatus comprises an illuminant module, an output voltage control module, an illuminant driver module, and an illuminant driver management module. The output voltage control module is configured to output a driving voltage. The illuminant driver module is configured to output an illuminant voltage to the illuminant module after receiving the driving voltage. The illuminant driver management module is configured to receive the illuminant voltage and to detect a variation in the illuminant voltage. Then, the illuminant driver management module outputs a control signal to the output voltage control module according to the variation of the illuminant voltage. Finally, the output voltage control module adjusts the driving voltage according to the control signal.
摘要翻译：提供投影装置和调整投影装置的驱动电压的方法。投影装置包括光源模块，输出电压控制模块，照明器驱动器模块和照明器驱动器管理模块。输出电压控制模块被配置为输出驱动电压。光源驱动器模块被配置为在接收到驱动电压之后将光源电压输出到光源模块。光源驱动器管理模块被配置为接收光源电压并且检测发光体电压的变化。然后，光源驱动器管理模块根据发光体电压的变化向输出电压控制模块输出控制信号。最后，输出电压控制模块根据控制信号调节驱动电压。

5. 发明申请

US20130015448A1 SEMICONDUCTOR DEVICE AND ELECTROLUMINESCENT DEVICE AND METHOD OF MAKING THE SAME 有权
标题翻译：半导体器件和电致发光器件及其制造方法
公开(公告)号：US20130015448A1
公开(公告)日：2013-01-17
申请号：US13423288
申请日：2012-03-19
申请人： Chao-Shun Yang , Hsing-Hung Hsieh
发明人： Chao-Shun Yang , Hsing-Hung Hsieh
IPC分类号： H01L33/08 , H01L21/8238 , H01L27/092
CPC分类号： H01L27/1251 , H01L27/0688
摘要： A semiconductor device, disposed on a substrate, includes a first channel layer, a patterned doped layer, a gate insulating layer, a conducting gate electrode, a second channel layer, a first electrode and a second electrode, and a third electrode and a fourth electrode. The first channel layer is disposed on the substrate and in a first region. The patterned doped layer includes a doped gate electrode disposed in a second region, and two contact electrodes electrically connected to two sides of the first channel layer, respectively. The conducting gate electrode is disposed on the gate insulating layer in the first region. The second channel layer is disposed on the gate insulating layer in the second region. The first electrode and the second electrode are electrically connected to the contact electrodes, respectively. The third electrode and the fourth electrode are electrically connected to two sides of the second channel layer, respectively.
摘要翻译：设置在基板上的半导体器件包括第一沟道层，图案化掺杂层，栅极绝缘层，导电栅电极，第二沟道层，第一电极和第二电极，以及第三电极和第四电极电极。第一沟道层设置在衬底上并在第一区域中。图案化掺杂层包括设置在第二区域中的掺杂栅电极和分别电连接到第一沟道层两侧的两个接触电极。导电栅电极设置在第一区域中的栅极绝缘层上。第二沟道层设置在第二区域中的栅极绝缘层上。第一电极和第二电极分别电连接到接触电极。第三电极和第四电极分别电连接到第二沟道层的两侧。

6. 发明申请

US20090267317A1 Shock absorbing frame for a bicycle 审中-公开
标题翻译：减震框架为自行车
公开(公告)号：US20090267317A1
公开(公告)日：2009-10-29
申请号：US12320621
申请日：2009-01-30
申请人： Chao-Shun Yang
发明人： Chao-Shun Yang
IPC分类号： B62K25/12
CPC分类号： B62K25/04 , B62K2201/02
摘要： A shock absorbing frame for a bicycle includes a seat tube extending along a lengthwise axis, a front frame unit, a rear frame unit, and a shock-absorbing member. The front frame unit includes top and bottom tubes extending rearwardly to terminate at upper and bottom ends, respectively. A connecting member is disposed between the top and down tubes, and extends from one of the top and down tubes. The rear frame unit includes a rear-axle stay and a chain stay. The rear-axle stay extends forwardly to bypass the lengthwise axis, and has a first front mount end. The chain stay has a second front mount end. A bottom bracket is disposed to interconnect the bottom end and the second front mount end. The shock-absorbing member is disposed between the first front mount end and the connecting member to damp the impact force propagating along the rear-axle stay.
摘要翻译：用于自行车的减震框架包括沿长度方向延伸的座管，前框架单元，后框架单元和减震构件。前框架单元包括分别向后延伸以终止于上端和底端的顶管和底管。连接构件设置在顶管和下管之间，并且从顶管和下管中的一个延伸。后框架单元包括后轴停留和链条停留。后轴支撑向前延伸以绕过纵向轴线，并具有第一前端安装端。链条停留具有第二个前端。底部支架设置成互连底端和第二前端安装端。减震构件设置在第一前安装端和连接构件之间，以阻尼沿着后轴座传播的冲击力。

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