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    • 1. 发明授权
    • Copper plating method
    • 镀铜方法
    • US09103012B2
    • 2015-08-11
    • US12931854
    • 2011-02-11
    • Chao-Peng ChenJas ChudasamaChien-Li LinDavid Wagner
    • Chao-Peng ChenJas ChudasamaChien-Li LinDavid Wagner
    • C25D5/34C23C2/02C23C14/58C25D5/02G11B5/17C23F1/12
    • C23F1/12C23C2/02C23C14/5873C25D5/022C25D5/34G11B5/17
    • A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.
    • 公开了一种在镀覆工艺期间激活铜籽晶层的方法,其包括施加由超声波雾化器产生的蒸气。 通电的蒸气滴包括水和弱的有机酸如乙酸,乳酸,柠檬酸,尿酸,草酸或甲酸,其蒸气压接近于水。 弱有机酸优选具有足够高的pKa以避免Cu蚀刻,但是足够的酸性以与高通量制造相容的速率除去氧化铜。 在一个实施方案中,将弱酸/水蒸汽施加到旋转碗中的基底上,然后在同一旋转碗中进行去离子水漂洗步骤。 改进的润湿性导致随后镀覆的铜膜的均匀性提高。 由于化学品消耗减少和产品产量提高,实现了大量的成本节约。
    • 2. 发明申请
    • Copper plating method
    • 镀铜方法
    • US20120205344A1
    • 2012-08-16
    • US12931854
    • 2011-02-11
    • Chao-Peng ChenJas ChudasamaChien-Li LinDavid Wagner
    • Chao-Peng ChenJas ChudasamaChien-Li LinDavid Wagner
    • C23F1/18C25D5/34C25D5/02
    • C23F1/12C23C2/02C23C14/5873C25D5/022C25D5/34G11B5/17
    • A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.
    • 公开了一种在镀覆工艺期间激活铜籽晶层的方法,其包括施加由超声波雾化器产生的蒸气。 通电的蒸气滴包括水和弱的有机酸如乙酸,乳酸,柠檬酸,尿酸,草酸或甲酸,其蒸气压接近于水。 弱有机酸优选具有足够高的pKa以避免Cu蚀刻,但是足够的酸性以与高通量制造相容的速率除去氧化铜。 在一个实施方案中,将弱酸/水蒸汽施加到旋转碗中的基底上,然后在同一旋转碗中进行去离子水漂洗步骤。 改进的润湿性导致随后镀覆的铜膜的均匀性提高。 由于化学品消耗减少和产品产量提高,实现了大量的成本节约。
    • 3. 发明授权
    • Method to reduce void formation during trapezoidal write pole plating in perpendicular recording
    • 在垂直记录中梯形写入极电镀期间减少空隙形成的方法
    • US08273233B2
    • 2012-09-25
    • US12460432
    • 2009-07-17
    • Chao-Peng ChenJas ChudasamaSituan LamChien-Li Lin
    • Chao-Peng ChenJas ChudasamaSituan LamChien-Li Lin
    • C25D5/02
    • C25D5/022C25D5/18C25D7/001G11B5/1278G11B5/3116G11B5/3163
    • A method of forming a write pole in a PMR head is disclosed that involves forming an opening in a mold forming layer. A conformal Ru seed layer is formed within the opening and on a top surface. An auxiliary layer made of CoFeNi or alloys thereof is formed as a conformal layer on the seed layer. All or part of the auxiliary layer is removed in an electroplating solution by applying a (−) current or voltage during an activation step that is controlled by activation time. Thereafter, a magnetic material is electroplated with a (+) current to fill the opening and preferably has the same CoFeNi composition as the auxiliary layer. The method avoids Ru oxidation that causes poor adhesion to CoFeNi, and elevated surfactant levels that lead to write pole impurities. Voids in the plated material are significantly reduced by forming a seed layer surface with improved wettability.
    • 公开了一种在PMR头中形成写极的方法,其涉及在成型层中形成开口。 在开口内和顶表面上形成保形钌籽晶层。 由CoFeNi制成的辅助层或其合金在种子层上形成为保形层。 通过在由激活时间控制的激活步骤期间施加( - )电流或电压,在电镀溶液中去除全部或部分辅助层。 此后,以(+)电流电镀磁性材料以填充开口,并且优选地具有与辅助层相同的CoFeNi组成。 该方法避免了Ru氧化,导致对CoFeNi的粘附不良,以及导致写入极杂质的表面活性剂含量升高。 通过形成具有改善的润湿性的种子层表面,可显着地减少电镀材料中的空隙。
    • 4. 发明申请
    • Novel method to reduce void formation during trapezoidal write pole plating in perpendicular recording
    • 在垂直记录中减少梯形写入极电镀期间的空隙形成的新方法
    • US20110011744A1
    • 2011-01-20
    • US12460432
    • 2009-07-17
    • Chao-Peng ChenJas ChudasamaSituan LamChien-Li Lin
    • Chao-Peng ChenJas ChudasamaSituan LamChien-Li Lin
    • C25D7/00
    • C25D5/022C25D5/18C25D7/001G11B5/1278G11B5/3116G11B5/3163
    • A method of forming a write pole in a PMR head is disclosed that involves forming an opening in a mold forming layer. A conformal Ru seed layer is formed within the opening and on a top surface. An auxiliary layer made of CoFeNi or alloys thereof is formed as a conformal layer on the seed layer. All or part of the auxiliary layer is removed in an electroplating solution by applying a (−) current or voltage during an activation step that is controlled by activation time. Thereafter, a magnetic material is electroplated with a (+) current to fill the opening and preferably has the same CoFeNi composition as the auxiliary layer. The method avoids Ru oxidation that causes poor adhesion to CoFeNi, and elevated surfactant levels that lead to write pole impurities. Voids in the plated material are significantly reduced by forming a seed layer surface with improved wettability.
    • 公开了一种在PMR头中形成写极的方法,其涉及在成型层中形成开口。 在开口内和顶表面上形成保形钌籽晶层。 由CoFeNi制成的辅助层或其合金在种子层上形成为保形层。 通过在由激活时间控制的激活步骤期间施加( - )电流或电压,在电镀溶液中去除全部或部分辅助层。 此后,以(+)电流电镀磁性材料以填充开口,并且优选地具有与辅助层相同的CoFeNi组成。 该方法避免了Ru氧化,导致对CoFeNi的粘附不良,以及导致写入极杂质的表面活性剂含量升高。 通过形成具有改善的润湿性的种子层表面,可显着地减少电镀材料中的空隙。
    • 5. 发明申请
    • Rejuvenation method for ruthenium plating seed
    • 钌电镀种子复原方法
    • US20110094888A1
    • 2011-04-28
    • US12589599
    • 2009-10-26
    • Chao-Peng ChenChien-Li LinJas ChudasamaSituan Lam
    • Chao-Peng ChenChien-Li LinJas ChudasamaSituan Lam
    • C25D21/12C25D5/34C25D5/10
    • C25D5/34C25D3/562C25D5/02C25D11/00
    • A method of rejuvenating a Ru plating seed layer during write pole fabrication in a PMR head is disclosed that involves forming an opening in a mold forming layer. A Ru seed layer is deposited by CVD within the opening and on a top surface of the mold forming layer. The substrate with the Ru seed layer is immersed in an acidic solution and an electric potential is applied for 1 to 2 minutes such that hydrogen is generated to reduce ruthenium oxides to Ru metal on the seed layer surface in an activation step. One or more surfactants are used to improve wettability of the Ru layer. The substrate is transferred directly to an electroplating solution without drying following the activation step to minimize exposure to oxygen that could regenerate oxides on the surface of the Ru layer. As a result, write pole voids and delamination are significantly reduced.
    • 公开了一种在PMR头中的写磁极制造期间使Ru电镀种子层再生的方法,其涉及在模具成型层中形成开口。 通过CVD将Ru籽晶层沉积在模具形成层的开口内和顶表面上。 将具有Ru籽晶层的衬底浸入酸性溶液中并施加电位1至2分钟,使得在活化步骤中产生氢以将氧化钌还原为种子层表面上的Ru金属。 使用一种或多种表面活性剂来改善Ru层的润湿性。 在活化步骤之后,将底物直接转移到电镀溶液中,而不会干燥以使暴露于可再生Ru层表面上的氧化物的氧暴露最小化。 结果,写入极空隙和分层显着减少。
    • 6. 发明申请
    • Method of reducing main pole corrosion during aluminum oxide etch
    • 减少氧化铝蚀刻过程中主极腐蚀的方法
    • US20120181181A1
    • 2012-07-19
    • US12930754
    • 2011-01-14
    • Chao-Peng ChengChih-I YangJas ChudasamaWilliam StokesChien-Li LinDavid Wagner
    • Chao-Peng ChengChih-I YangJas ChudasamaWilliam StokesChien-Li LinDavid Wagner
    • G11B5/187B08B7/00
    • G11B5/1278G11B5/3116G11B5/3163
    • A method of removing an alumina layer around a main pole layer during perpendicular magnetic recording head fabrication is disclosed. The alumina etch sequence includes immersing a substrate in a series of aqueous solutions purged with an inert gas to remove oxygen thereby avoiding corrosion of the main pole. Initially, the substrate is soaked and heated in deionized (DI) water. Once heated, the substrate is immersed in an etching bath at about 80° C. and pH 10.5. Bath chemistry is preferably based on Na2CO3 and NaHCO3, and N2 purging improves etch uniformity and reduces residue. Thereafter, the substrate is rinsed in a second DI water bath between room temperature and 80° C., and finally subjected to a quick dump rinse before drying. Inert gas, preferably N2, may be introduced into the aqueous solutions through a purge board having a plurality of openings and positioned proximate to the bottom of a bath container.
    • 公开了一种在垂直磁记录头制造期间去除主极层周围的氧化铝层的方法。 氧化铝蚀刻顺序包括将衬底浸入用惰性气体吹扫的一系列水溶液中以除去氧气,从而避免主极的腐蚀。 最初,将基底浸泡并在去离子(DI)水中加热。 一旦加热,将基底浸入约80℃和pH 10.5的蚀刻浴中。 浴化学优选基于Na 2 CO 3和NaHCO 3,并且N 2吹扫改善蚀刻均匀性并减少残余物。 此后,将基板在室温至80℃的第二DI水浴中冲洗,最后在干燥前进行快速倾倒冲洗。 可以通过具有多个开口并且靠近浴容器的底部定位的吹扫板将惰性气体,优选N 2引入水溶液中。
    • 8. 发明授权
    • Method to reduce ferric ions in ferrous based plating baths
    • 减少铁基电镀液中铁离子的方法
    • US07431815B2
    • 2008-10-07
    • US11122847
    • 2005-05-05
    • Chao-Peng ChenJas ChudasamaSituan Lam
    • Chao-Peng ChenJas ChudasamaSituan Lam
    • C25D21/06C25D21/18C25D3/20C25D3/56
    • C25D3/20C25D5/18C25D21/12
    • A process for cathodically reducing unwanted Fe+3 ions to needed Fe+2 ions in an acidic ferrous based plating bath without reducing agents is disclosed. An auxiliary potential of 0.1 to 0.3 volts vs. SCE is applied between the working electrode and a reference electrode and can reduce the molar ratio [Fe+3]/[Fe+2] to 1 ppm without depositing Fe or other metals on the working electrode or causing hydrogen evolution. The process is applicable to electroplating soft magnetic films such as NiFe, FeCo, and CoNiFe and can be performed during plating or during cell idling. The process is cost effective by reducing the amount of hazardous waste and tool down time due to routine solution swap. Other benefits are improved uniformity in composition and thickness of plated films because issues associated with decomposed reducing agents are avoided.
    • 公开了一种在不含还原剂的酸性铁基镀液中阴极还原不需要的Fe + +离子至所需的Fe 2+ +2 +离子的方法。 在工作电极和参考电极之间施加相对于SCE的0.1至0.3伏特的辅助电位,并且可以降低摩尔比[Fe 2+] / [Fe 2+] +2 ]至1ppm,而不在工作电极上沉积Fe或其他金属或导致析氢。 该方法适用于电镀NiFe,FeCo和CoNiFe等软磁膜,可在电镀过程中或电池空闲期间进行。 该过程通过减少由于常规溶液互换而导致的危险废物和工具停机时间的成本效益。 其他优点是改善了镀膜的组成和厚度的均匀性,因为避免了与分解的还原剂相关的问题。
    • 9. 发明申请
    • Method to reduce ferric ions in ferrous based plating baths
    • 减少铁基电镀液中铁离子的方法
    • US20060249392A1
    • 2006-11-09
    • US11122847
    • 2005-05-05
    • Chao-Peng ChenJas ChudasamaSituan Lam
    • Chao-Peng ChenJas ChudasamaSituan Lam
    • C25B1/00C25D3/20
    • C25D3/20C25D5/18C25D21/12
    • A process for cathodically reducing unwanted Fe+3 ions to needed Fe+2 ions in an acidic ferrous based plating bath without reducing agents is disclosed. An auxiliary potential of 0.1 to 0.3 volts vs. SCE is applied between the working electrode and a reference electrode and can reduce the molar ratio [Fe+3]/[Fe+2] to 1 ppm without depositing Fe or other metals on the working electrode or causing hydrogen evolution. The process is applicable to electroplating soft magnetic films such as NiFe, FeCo, and CoNiFe and can be performed during plating or during cell idling. The process is cost effective by reducing the amount of hazardous waste and tool down time due to routine solution swap. Other benefits are improved uniformity in composition and thickness of plated films because issues associated with decomposed reducing agents are avoided.
    • 公开了一种在不含还原剂的酸性铁基镀液中阴极还原不需要的Fe + +离子至所需的Fe 2+ +2 +离子的方法。 在工作电极和参考电极之间施加相对于SCE的0.1至0.3伏特的辅助电位,并且可以降低摩尔比[Fe 2+] / [Fe 2+] +2 ]至1ppm,而不在工作电极上沉积Fe或其他金属或导致析氢。 该方法适用于电镀NiFe,FeCo和CoNiFe等软磁膜,可在电镀过程中或电池空闲期间进行。 该过程通过减少由于常规溶液互换而导致的危险废物和工具停机时间的成本效益。 其他优点是改善了镀膜的组成和厚度的均匀性,因为避免了与分解的还原剂相关的问题。