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1. 发明授权

US08168984B2 Light emitting diodes with smooth surface for reflective electrode 有权
标题翻译：用于反射电极的光滑表面的发光二极管
公开(公告)号：US08168984B2
公开(公告)日：2012-05-01
申请号：US13033533
申请日：2011-02-23
申请人： Chao-Kun Lin , Heng Liu
发明人： Chao-Kun Lin , Heng Liu
IPC分类号： H01L31/0256
CPC分类号： H01L33/36 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2924/00014 , H01L2924/12044 , H01L2924/00 , H01L2224/05599
摘要： A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are disposed on one side of the epitaxial layer structure. The epitaxial layer structure includes a transparent ohmic contact layer having a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is formed. The epitaxial layer structure includes a p-type epitaxial layer and a n-type epitaxial layer, wherein the n-type epitaxial layer is coupled between the first electrode and the p-type epitaxial layer, and the p-type epitaxial layer is between the second electrode and the n-type epitaxial layer. The first electrode is located on the n-type epitaxial layer.
摘要翻译：一种发光二极管，包括外延层结构，第一电极和第二电极。第一和第二电极设置在外延层结构的一侧上。外延层结构包括在形成第二电极的表面处具有小于约3nm的均方根（RMS）粗糙度的透明欧姆接触层。外延层结构包括p型外延层和n型外延层，其中n型外延层耦合在第一电极和p型外延层之间，p型外延层位于第二电极和n型外延层。第一电极位于n型外延层上。

2. 发明授权

US08163578B2 Light emitting diodes with smooth surface for reflective electrode 有权
标题翻译：用于反射电极的光滑表面的发光二极管
公开(公告)号：US08163578B2
公开(公告)日：2012-04-24
申请号：US12834747
申请日：2010-07-12
申请人： Chao-Kun Lin , Heng Liu
发明人： Chao-Kun Lin , Heng Liu
IPC分类号： H01L21/00
CPC分类号： H01L33/36 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2924/00014 , H01L2924/12044 , H01L2924/00 , H01L2224/05599
摘要： A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.
摘要翻译：一种发光二极管，包括外延层结构，第一电极和第二电极。第一和第二电极分别设置在外延层结构上，外延层结构在形成第一电极的表面处具有小于约3的均方根（RMS）粗糙度。

3. 发明授权

US07781780B2 Light emitting diodes with smooth surface for reflective electrode 有权
标题翻译：用于反射电极的光滑表面的发光二极管
公开(公告)号：US07781780B2
公开(公告)日：2010-08-24
申请号：US12120051
申请日：2008-05-13
申请人： Chao-Kun Lin , Heng Liu
发明人： Chao-Kun Lin , Heng Liu
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/22 , H01L29/24 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/36 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2924/00014 , H01L2924/12044 , H01L2924/00 , H01L2224/05599
摘要： A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.
摘要翻译：一种发光二极管，包括外延层结构，第一电极和第二电极。第一和第二电极分别设置在外延层结构上，外延层结构在形成第一电极的表面处具有小于约3的均方根（RMS）粗糙度。

4. 发明申请

US20090242924A1 LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE 有权
标题翻译：具有反射电极平滑表面的发光二极管
公开(公告)号：US20090242924A1
公开(公告)日：2009-10-01
申请号：US12120051
申请日：2008-05-13
申请人： Chao-Kun LIN , Heng Liu
发明人： Chao-Kun LIN , Heng Liu
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/36 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2924/00014 , H01L2924/12044 , H01L2924/00 , H01L2224/05599
摘要： A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.
摘要翻译：一种发光二极管，包括外延层结构，第一电极和第二电极。第一和第二电极分别设置在外延层结构上，外延层结构在形成第一电极的表面处具有小于约3的均方根（RMS）粗糙度。

5. 发明申请

US20110008923A1 LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE 有权
标题翻译：具有反射电极平滑表面的发光二极管
公开(公告)号：US20110008923A1
公开(公告)日：2011-01-13
申请号：US12834747
申请日：2010-07-12
申请人： Chao-Kun Lin , Heng Liu
发明人： Chao-Kun Lin , Heng Liu
IPC分类号： H01L33/30
CPC分类号： H01L33/36 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2924/00014 , H01L2924/12044 , H01L2924/00 , H01L2224/05599
摘要： A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.
摘要翻译：一种发光二极管，包括外延层结构，第一电极和第二电极。第一和第二电极分别设置在外延层结构上，外延层结构在形成第一电极的表面处具有小于约3的均方根（RMS）粗糙度。

6. 发明申请

US20140175738A1 SHEET-TYPE MEDIUM STACKING AND GUIDING DEVICE, AS WELL AS CONTROL SYSTEM AND METHOD BASED ON THE SAME 有权
标题翻译：作为控制系统和方法的片材类型的中间堆叠和指导装置
公开(公告)号：US20140175738A1
公开(公告)日：2014-06-26
申请号：US13884268
申请日：2012-07-09
申请人： Heng Liu , Dong Tan , En Wu , Fa Ran
发明人： Heng Liu , Dong Tan , En Wu , Fa Ran
IPC分类号： B65H5/00 , B65H7/06 , B65H9/00
CPC分类号： B65H5/00 , B65H5/008 , B65H7/06 , B65H9/004 , B65H29/40 , B65H29/52 , B65H31/02 , B65H31/20 , B65H31/34 , B65H31/38 , B65H2301/4212 , B65H2301/4213 , B65H2403/512 , B65H2403/514 , B65H2403/52 , B65H2404/7414 , B65H2404/742 , B65H2511/222 , B65H2511/413 , B65H2701/1912 , G07D11/0021 , B65H2220/01 , B65H2220/02 , B65H2220/11
摘要： Disclosed in the present invention is a sheet-type medium stacking and guiding device, also disclosed in the present invention are a control system and a method based on the same. The device comprises: a left limiting plate (14) and/or a right limiting plate (19), which locate at the outer end of a medium passage made up of a left and a right passage plate (301, 304); a driving mechanism (25), which is in transmission connection with the limiting plates and drives the limiting plates to move along the longitudinal direction of the medium. The system comprises a central control module (901), a detection module (902), a data processing module (903), an image acquisition module (904), a storage module (905) and an execution module (906). The method comprises: identifying the species of the medium to be arranged; querying the property of the medium to be arranged, obtaining the length value of the medium; calculating and outputting the servo signal for the executing component of the driving mechanism, driving the limiting plates to move to a predetermined position along the longitudinal direction of the medium. The medium arranging range can be increased by adjusting the position of the limiting plates to meet the requirements of the stacking medium with different lengths.
摘要翻译：在本发明中公开了一种片式介质堆叠引导装置，其也在本发明中公开了一种控制系统及其方法。该装置包括：位于由左右通道板（301,304）构成的介质通道的外端的左限位板（14）和/或右限位板（19）; 驱动机构（25），其与限位板传输连接并驱动限位板沿着介质的纵向方向移动。该系统包括中央控制模块（901），检测模块（902），数据处理模块（903），图像采集模块（904），存储模块（905）和执行模块（906）。该方法包括：识别要排列的介质的种类; 查询要布置的介质的属性，获取介质的长度值; 计算并输出用于驱动机构的执行部件的伺服信号，驱动限位板沿着介质的纵向方向移动到预定位置。可以通过调整限位板的位置来满足不同长度的堆叠介质的要求来增加介质布置范围。

7. 发明授权

US08574936B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08574936B2
公开(公告)日：2013-11-05
申请号：US13116765
申请日：2011-05-26
申请人： Ray-Hua Horng , Yi-An Lu , Heng Liu
发明人： Ray-Hua Horng , Yi-An Lu , Heng Liu
IPC分类号： H01L27/15 , H01L33/22 , H01L33/06
CPC分类号： H01L27/153 , H01L33/0079 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the light emitting unit; and (g) etching the exposed light emitting unit, to expose at least one of the n-electrode and the p-electrode.
摘要翻译：一种制造半导体发光器件的方法包括：（a）提供临时衬底; （b）在所述临时衬底上形成具有至少一个发光单元的多层LED外延结构，其中所述发光单元的第一表面接触所述临时衬底，并且所述发光单元包括n型层，有源区和p型层; （c）在n型层上形成n电极; （d）在p型层上形成p电极; （e）在发光单元，n电极和p电极上键合永久性基板; （f）去除临时衬底以露出发光单元; 和（g）蚀刻暴露的发光单元，以暴露n电极和p电极中的至少一个。

8. 发明授权

US08546829B2 Posts in glue layer for group-III nitride LEDs 有权
标题翻译： III-III族氮化物LED胶层的柱
公开(公告)号：US08546829B2
公开(公告)日：2013-10-01
申请号：US13185845
申请日：2011-07-19
申请人： Ray-Hua Horng , Heng Liu , Yi-An Lu
发明人： Ray-Hua Horng , Heng Liu , Yi-An Lu
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/46 , H01L33/641
摘要： A semiconductor light emitting device and a method for making the semiconductor light emitting device are described. The semiconductor light emitting device includes an epitaxial structure having a first type doped layer, a light emitting layer, and a second type doped layer. The epitaxial structure may further include an undoped layer. A substrate is bonded to at least one surface of the epitaxial structure with an adhesive layer. One or more posts are located in the adhesive layer. The posts may have different widths depending on the location of the posts and/or the posts may only be located under certain portions of the epitaxial structure.
摘要翻译：对半导体发光元件及半导体发光元件的制造方法进行说明。半导体发光器件包括具有第一类型掺杂层，发光层和第二类型掺杂层的外延结构。外延结构还可以包括未掺杂的层。用粘合剂层将衬底结合到外延结构的至少一个表面。一个或多个柱位于粘合剂层中。柱可以具有不同的宽度，这取决于柱的位置和/或柱可以仅位于外延结构的特定部分之下。

9. 发明授权

US08502239B2 High power allngan based multi-chip light emitting diode 有权
标题翻译：大功率全能多芯片发光二极管
公开(公告)号：US08502239B2
公开(公告)日：2013-08-06
申请号：US11272366
申请日：2005-11-10
申请人： Heng Liu
发明人： Heng Liu
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , F21L4/027 , F21Y2115/10 , H01L25/0753 , H01L27/156 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/60 , H01L2224/48091 , H01L2224/48137 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode chip having a substantially transparent substrate and having an aspect ratio, which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed.
摘要翻译：具有基本上透明的基板并且具有限定细长几何形状的纵横比的发光二极管芯片提供增强的效率和亮度。还公开了其形成和操作方法。

10. 发明申请

US20120193652A1 LED ARRAY FORMED BY INTERCONNECTED AND SURROUNDED LED CHIPS 审中-公开
标题翻译： LED阵列由互连和周边LED灯形成
公开(公告)号：US20120193652A1
公开(公告)日：2012-08-02
申请号：US13287542
申请日：2011-11-02
申请人： Ray-Hua Horng , Yi-An Lu , Heng Liu
发明人： Ray-Hua Horng , Yi-An Lu , Heng Liu
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L24/24 , H01L33/54 , H01L33/62 , H01L33/641 , H01L2224/24137 , H01L2224/73267 , H01L2924/12041 , H01L2924/15788 , H01L2933/0066 , H01L2924/00
摘要： A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes with the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes opposite the permanent substrate (the side opposite the interconnect).
摘要翻译：发光二极管阵列包括具有第一电极的第一发光二极管和具有第二电极的第二发光二极管。第一和第二发光二极管被分离。第一聚合物层位于发光二极管之间。至少部分地位于第一聚合物层上的互连将第一电极连接到第二电极。永久基板耦合到发光二极管。永久性基板通过互连件耦合到发光二极管的侧面。第二聚合物层至少部分地封装与永久基板相对的发光二极管的侧面（与互连件相对的一侧）。

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