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1. 发明授权

US08197597B2 Gallium trichloride injection scheme 有权
标题翻译：三氯化镓注射方案
公开(公告)号：US08197597B2
公开(公告)日：2012-06-12
申请号：US12305534
申请日：2007-11-15
申请人： Chantal Arena , Christiaan Werkhoven
发明人： Chantal Arena , Christiaan Werkhoven
IPC分类号： C30B25/10 , C30B25/14 , C01B21/06 , B01F3/02 , C23C16/08 , C23C16/28 , C23C16/34 , C23C16/448 , C23C16/455 , C01B21/072 , C23C16/452
CPC分类号： C30B25/10 , C23C16/303 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45593 , C30B25/14 , C30B29/406 , C30B35/00 , H01L21/0254 , H01L21/0262
摘要： The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor continuously provided at a mass flow of 50 g Group III element/hour for at least 48 hours. A system for conducting the method is also provided.
摘要翻译：本发明涉及半导体处理设备和方法的领域，并且特别提供用于持续，大批量生产适用于制造光学和电子部件的III-V族化合物半导体材料的方法和设备，以供使用作为用于外延沉积的衬底，用于晶片等。在优选的实施方案中，这些方法被优化用于生产III-N（氮）化合物半导体晶片，并且专门用于生产GaN晶片。具体地说，该方法包括将一定量的作为一种反应物的气态III族前体与一定量的气态V族组分作为另外的反应物在反应室中反应，条件足以在一个或多个反应器上提供持续的大量制造半导体材料底物，气态III族前体以50g III族元素/小时的质量流量连续提供至少48小时。还提供了一种用于进行该方法的系统。

2. 发明申请

US20090283029A1 ABATEMENT OF REACTION GASES FROM GALLIUM NITRIDE DEPOSITION 有权
标题翻译：硝酸银沉淀反应气体的吸收
公开(公告)号：US20090283029A1
公开(公告)日：2009-11-19
申请号：US12305495
申请日：2007-11-15
申请人： Chantal Arena , Christiaan Werkhoven
发明人： Chantal Arena , Christiaan Werkhoven
IPC分类号： C30B25/02 , C23C16/00 , C23C16/513
CPC分类号： C30B25/14 , C23C16/4412 , C30B25/08 , C30B25/165 , C30B29/40 , C30B29/403
摘要： Methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment and methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material.
摘要翻译：用于持续，大批量生产适用于制造光学和电子部件的III-V族化合物半导体材料，用作外延沉积的基底或用于晶片的方法。该设备和方法被优化用于生产III-N（氮）化合物半导体晶片，并专门用于生产GaN晶片。该方法包括将一定量的作为一种反应物的气态III族前体与一定量的气态V族组分作为反应室中的另一反应物反应以形成半导体材料; 去除废气，包括未反应的III族前体，未反应的V族组分和反应副产物; 并将废气加热到足以减少其冷凝的温度，并且增强半导体材料的制造。有利地，排气被加热以充分避免冷凝，以促进半导体材料的持续高容量制造。

3. 发明申请

US20090205563A1 TEMPERATURE-CONTROLLED PURGE GATE VALVE FOR CHEMICAL VAPOR DEPOSITION CHAMBER 有权
标题翻译：化学蒸气沉积室的温度控制浇口阀
公开(公告)号：US20090205563A1
公开(公告)日：2009-08-20
申请号：US12305553
申请日：2007-11-16
申请人： Chantal Arena , Christiaan Werkhoven
发明人： Chantal Arena , Christiaan Werkhoven
IPC分类号： C30B25/02 , C30B25/08 , C30B25/14
CPC分类号： C30B25/14 , C23C16/303 , C23C16/4401 , C23C16/4412 , C23C16/481 , C23C16/54 , C30B29/403 , H01L21/0254 , H01L21/0262 , Y10T117/10 , Y10T117/1008
摘要： The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.
摘要翻译：本发明涉及为生产III-N（氮）化合物半导体晶片而专门用于生产GaN晶片的方法和装置。具体地说，这些方法涉及基本上防止在化学气相沉积（CVD）反应器内的隔离阀装置上形成不需要的材料。特别地，本发明提供了用于限制用于系统中的隔离阀上的GaCl 3和反应副产物的沉积/冷凝的装置和方法，以及通过使一定量的气态反应形成单晶III-V族半导体材料的方法 III族前体作为一种反应物，一定量的气态V族组分作为反应室中的另一反应物。

4. 发明授权

US09580836B2 Equipment for high volume manufacture of group III-V semiconductor materials 有权
标题翻译： III-V族III族半导体材料大批量生产设备
公开(公告)号：US09580836B2
公开(公告)日：2017-02-28
申请号：US12305574
申请日：2007-11-16
申请人： Chantal Arena , Christiaan Werkhoven
发明人： Chantal Arena , Christiaan Werkhoven
IPC分类号： C23C16/00 , C30B25/14 , C30B29/40 , C30B35/00
CPC分类号： C30B25/14 , C30B29/406 , C30B35/00
摘要： The invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. The invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.
摘要翻译：本发明涉及为生产III-N（氮）化合物半导体晶片，特别是GaN晶片而优化的方法和装置。具体地说，这些方法涉及基本上防止在化学气相沉积（CVD）反应器内的隔离阀装置上形成不需要的材料。本发明提供了用于限制用于该系统的隔离阀上的GaCl 3和反应副产物的沉积/冷凝的装置和方法以及通过使一定量的第III族前体气体反应形成单晶III-V族半导体材料的方法作为一种反应物，其具有一定量的气态V族组分作为反应室中的另一反应物。

5. 发明授权

US08585820B2 Abatement of reaction gases from gallium nitride deposition 有权
标题翻译：减少氮化镓沉积反应气体
公开(公告)号：US08585820B2
公开(公告)日：2013-11-19
申请号：US12305495
申请日：2007-11-15
申请人： Chantal Arena , Christiaan Werkhoven
发明人： Chantal Arena , Christiaan Werkhoven
IPC分类号： C30B23/00 , C30B25/00 , C30B28/14 , C23C16/00
CPC分类号： C30B25/14 , C23C16/4412 , C30B25/08 , C30B25/165 , C30B29/40 , C30B29/403
摘要： Methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment and methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material.
摘要翻译：用于持续，大批量生产适用于制造光学和电子部件的III-V族化合物半导体材料，用作外延沉积的基底或用于晶片的方法。该设备和方法被优化用于生产III-N（氮）化合物半导体晶片，并专门用于生产GaN晶片。该方法包括将一定量的作为一种反应物的气态III族前体与一定量的气态V族组分作为反应室中的另一反应物反应以形成半导体材料; 去除废气，包括未反应的III族前体，未反应的V族组分和反应副产物; 并将废气加热到足以减少其冷凝的温度，并且增强半导体材料的制造。有利地，排气被加热以充分避免冷凝，以促进半导体材料的持续高容量制造。

6. 发明授权

US08382898B2 Methods for high volume manufacture of group III-V semiconductor materials 有权
标题翻译： III-V族III族半导体材料大批量生产的方法
公开(公告)号：US08382898B2
公开(公告)日：2013-02-26
申请号：US12305394
申请日：2007-11-15
申请人： Chantal Arena , Christiaan Werkhoven
发明人： Chantal Arena , Christiaan Werkhoven
IPC分类号： C30B25/00 , C30B23/00
CPC分类号： C30B25/02 , C30B29/403
摘要： The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor continuously provided at a mass flow of 50 g Group III element/hour for at least 48 hours.
摘要翻译：本发明涉及半导体处理设备和方法的领域，并且特别地提供了用于持续，大批量生产适用于制造光学和电子部件的III-V族化合物半导体材料用作基板的方法用于外延沉积，用于晶片等。在优选的实施方案中，这些方法被优化用于生产III-N（氮）化合物半导体晶片，并且专门用于生产GaN晶片。具体地说，该方法包括将一定量的作为一种反应物的气态III族前体与一定量的气态V族组分作为另外的反应物在反应室中反应，条件足以在一个或多个反应器上提供持续的大量制造半导体材料底物，气态III族前体以50g III族元素/小时的质量流量连续提供至少48小时。

7. 发明申请

US20120132922A1 COMPOSITE SUBSTRATE WITH CRYSTALLINE SEED LAYER AND CARRIER LAYER WITH A COINCIDENT CLEAVAGE PLANE 审中-公开
标题翻译：具有结晶层和复合层的复合基板与共轭CLEAVAGE PLANE
公开(公告)号：US20120132922A1
公开(公告)日：2012-05-31
申请号：US13382806
申请日：2009-07-08
申请人： Chantal Arena , Christiaan Werkhoven
发明人： Chantal Arena , Christiaan Werkhoven
IPC分类号： H01L21/18 , H01L29/20
CPC分类号： H01L21/76254 , H01S5/0202 , H01S5/0213 , H01S5/0216 , H01S5/32341
摘要： A structure and a method can provide a crystalline seed layer material, such as GaN, on a crystalline carrier material, such as sapphire, aligned such that a common crystal plane exists between the two materials. The common crystal plane may provide for a fracture surface along a cleavage plane that may be oriented to be perpendicular to the top surface of an optoelectronic device as well as perpendicular to a light emission direction.
摘要翻译：结构和方法可以在诸如蓝宝石的结晶载体材料上提供诸如GaN的结晶种子层材料，使得在两种材料之间存在共同的晶面。普通晶面可以沿着可以被定向成垂直于光电子器件的顶表面以及垂直于光发射方向的解理面的断裂表面。

8. 发明申请

US20090223442A1 METHODS FOR HIGH VOLUME MANUFACTURE OF GROUP III-V SEMICONDUCTOR MATERIALS 有权
标题翻译： III-V族半导体材料的高体积制备方法
公开(公告)号：US20090223442A1
公开(公告)日：2009-09-10
申请号：US12305394
申请日：2007-11-15
申请人： Chantal Arena , Christiaan Werkhoven
发明人： Chantal Arena , Christiaan Werkhoven
IPC分类号： C30B25/02
CPC分类号： C30B25/02 , C30B29/403
摘要： The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor continuously provided at a mass flow of 50 g Group III element/hour for at least 48 hours.
摘要翻译：本发明涉及半导体处理设备和方法的领域，并且特别地提供了用于持续，大批量生产适用于制造光学和电子部件的III-V族化合物半导体材料用作基板的方法用于外延沉积，用于晶片等。在优选的实施方案中，这些方法被优化用于生产III-N（氮）化合物半导体晶片，并且专门用于生产GaN晶片。具体地说，该方法包括将一定量的作为一种反应物的气态III族前体与一定量的气态V族组分作为另外的反应物在反应室中反应，条件足以在一个或多个反应器上提供持续的大量制造半导体材料底物，气态III族前体以50g III族元素/小时的质量流量连续提供至少48小时。

9. 发明申请

US20090223441A1 HIGH VOLUME DELIVERY SYSTEM FOR GALLIUM TRICHLORIDE 审中-公开
标题翻译：用于三氯化镓的高容量输送系统
公开(公告)号：US20090223441A1
公开(公告)日：2009-09-10
申请号：US12305434
申请日：2007-11-15
申请人： Chantal Arena , Christiaan Werkhoven
发明人： Chantal Arena , Christiaan Werkhoven
IPC分类号： C30B25/16 , C23C16/00
CPC分类号： C23C16/303 , C23C16/4412 , C23C16/4482 , C23C16/45514 , C23C16/45572 , C23C16/45574 , C23C16/4581 , C23C16/481 , C23C16/54 , H01L21/0254 , H01L21/0262
摘要： The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods and equipment are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the precursor is provided at a mass flow of at least 50 g Group III element/hour for a time of at least 48 hours to facilitate high volume manufacture of the semiconductor material. Advantageously, the mass flow of the gaseous Group III precursor is controlled to deliver the desired amount.
摘要翻译：本发明涉及半导体处理设备和方法的领域，并且特别提供用于持续，大批量生产适用于制造光学和电子部件的III-V族化合物半导体材料的方法和设备，以供使用作为用于外延沉积的衬底，用于晶片等。在优选实施例中，这些方法和设备被优化用于生产III-N（氮）化合物半导体晶片，并且专门用于生产GaN晶片。具体地说，以至少50g III族元素/小时的质量流量提供前体至少48小时以促进半导体材料的大量制造。有利地，控制气态III族前体的质量流量以输送所需量。

10. 发明授权

US08545628B2 Temperature-controlled purge gate valve for chemical vapor deposition chamber 有权
标题翻译：用于化学气相沉积室的温度控制清洗闸阀
公开(公告)号：US08545628B2
公开(公告)日：2013-10-01
申请号：US12305553
申请日：2007-11-16
申请人： Chantal Arena , Christiaan Werkhoven
发明人： Chantal Arena , Christiaan Werkhoven
IPC分类号： C30B35/00 , C30B13/28 , C30B23/00 , C23C16/00
CPC分类号： C30B25/14 , C23C16/303 , C23C16/4401 , C23C16/4412 , C23C16/481 , C23C16/54 , C30B29/403 , H01L21/0254 , H01L21/0262 , Y10T117/10 , Y10T117/1008
摘要： The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.
摘要翻译：本发明涉及为生产III-N（氮）化合物半导体晶片而专门用于生产GaN晶片的方法和装置。具体地说，这些方法涉及基本上防止在化学气相沉积（CVD）反应器内的隔离阀装置上形成不需要的材料。特别地，本发明提供了用于限制用于系统中的隔离阀上的GaCl 3和反应副产物的沉积/冷凝的装置和方法，以及通过使一定量的气态反应形成单晶III-V族半导体材料的方法 III族前体作为一种反应物，一定量的气态V族组分作为反应室中的另一反应物。

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