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1. 发明申请

US20100024727A1 SHOWERHEAD AND CHEMICAL VAPOR DEPOSITION APPARATUS INCLUDING THE SAME 审中-公开
标题翻译：淋浴和化学气相沉积装置，包括它们
公开(公告)号：US20100024727A1
公开(公告)日：2010-02-04
申请号：US12407347
申请日：2009-03-19
申请人： Changsung Sean Kim , Young Sun Won , Jong Pa Hong , Yong Il Kwon , Ji Hye Shim
发明人： Changsung Sean Kim , Young Sun Won , Jong Pa Hong , Yong Il Kwon , Ji Hye Shim
IPC分类号： C23C16/44
CPC分类号： C23C16/45502 , C23C16/45565
摘要： Provided is a showerhead that can inject a reaction gas into a reaction chamber in a manner such that the injected reaction gas form a spiral vortex flow field. Therefore, the injected reaction gas can be mixed within a shorter distance, and thus the effective deposition radius of a wafer can be increased so that uniform-density deposition can be performed on the entire surface of the wafer using the mixed reaction gas.
摘要翻译：提供一种喷射器，其能够以使得注入的反应气体形成螺旋涡流场的方式将反应气体注入反应室。因此，注入的反应气体可以在更短的距离内混合，从而可以提高晶片的有效沉积半径，从而可以使用混合反应气体在晶片的整个表面上进行均匀的浓度沉积。

2. 发明授权

US08298338B2 Chemical vapor deposition apparatus 有权
标题翻译：化学气相沉积装置
公开(公告)号：US08298338B2
公开(公告)日：2012-10-30
申请号：US12259709
申请日：2008-10-28
申请人： Changsung Sean Kim , Sang Duk Yoo , Jong Pa Hong , Ji Hye Shim , Won Shin Lee
发明人： Changsung Sean Kim , Sang Duk Yoo , Jong Pa Hong , Ji Hye Shim , Won Shin Lee
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45508 , C23C16/4412 , C23C16/45504 , C23C16/45574 , C23C16/4558 , C23C16/45582 , C23C16/45591 , C23C16/4584
摘要： Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.
摘要翻译：提供了一种化学气相沉积设备。该装置包括反应室，气体引入单元和排气单元。反应室包括其上装载有晶片的基座和通过化学气相沉积处理晶片的反应炉。气体引入单元设置在反应室的外壁处，以将反应气体从反应炉的外部供应到反应炉的中心部分。在反应气体用于反应炉中的反应之后，排气单元设置在反应室的中心部分，以将反应气体排出到反应室的上部或下部。因此，即使当生长高温沉积层的工艺压力增加时，室内的气体密度也可以保持在基本均匀的状态。

3. 发明申请

US20130162064A1 LAMINATED CORE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：层压芯及其制造方法
公开(公告)号：US20130162064A1
公开(公告)日：2013-06-27
申请号：US13408979
申请日：2012-02-29
申请人： Changsung Sean Kim , Guen Hong Lee , Han Kyung Bae , Chang Hwan Choi , Ji Hye Shim
发明人： Changsung Sean Kim , Guen Hong Lee , Han Kyung Bae , Chang Hwan Choi , Ji Hye Shim
IPC分类号： H02K1/02 , B05D5/12 , H02K15/10
CPC分类号： H02K1/02 , B22F3/18 , B22F2998/10 , C22C2202/02 , H01F1/24 , H01F3/08 , H01F41/0233 , H02K15/02 , B22F1/02 , B22F3/22
摘要： Disclosed herein is a laminated core used for a motor such as an electric motor, including: a unit laminate laminated in at least one layer and formed of a soft magnetic composite, wherein each powder particle forming the soft magnetic composite is insulation-coated. The preferred embodiments of the present invention can improve the mechanical strength of the core of the soft magnetic composite by manufacturing the core using the laminating method of the soft magnetic composite and reduce core loss by performing insulation coating on powder particles forming the soft magnetic composite.
摘要翻译：本文公开了一种用于诸如电动机的电动机的层压铁心，包括：层压在至少一层中并由软磁性复合材料形成的单元层压体，其中形成软磁性复合材料的每个粉末颗粒被绝缘涂覆。本发明的优选实施方式可以通过使用软磁性复合体的层叠方法制造芯来提高软磁性复合体的芯的机械强度，并通过在形成软磁性复合体的粉末颗粒上进行绝缘涂层来降低芯损耗。

4. 发明申请

US20100178690A1 BIOMOLECULE DETECTION APPARATUS AND BIOMOLECULE MEASUREMENT SYSTEM 审中-公开
标题翻译：生物分子检测装置和生物分子测量系统
公开(公告)号：US20100178690A1
公开(公告)日：2010-07-15
申请号：US12501352
申请日：2009-07-10
申请人： Changsung Sean KIM , Ji Hye Shim
发明人： Changsung Sean KIM , Ji Hye Shim
IPC分类号： C12M1/34
CPC分类号： G01N35/1095 , G01N21/05 , G01N21/6458 , G01N2021/0346
摘要： The present invention relates to a biomolecule detection apparatus and a biomolecule measurement system. A biomolecule detection apparatus according to an aspect of the invention may include: an upper disc having a fluid inlet in a thickness direction through which a fluid is introduced to the inside; a lower disc laminated to the upper disc and having a fluid outlet in a thickness direction through which the fluid exits to the outside; detection units provided on each of the upper disc and the lower disc and including spherical microbeads having surfaces coated with materials used to capture biomolecules; and via holes provided along the edge of each of the upper disc and the lower disc so that the fluid flows between the upper disc and the lower disc.According to the present invention, a biomolecule detection apparatus that achieves excellent performance in the detection of rare cells and has a biochip structure to ensure quality mass production, and a biomolecule measurement system that can accurately and easily measure the biomolecules captured by the biomolecule detection apparatus can be provided.
摘要翻译：本发明涉及生物分子检测装置和生物分子测定系统。根据本发明的一个方面的生物分子检测装置可以包括：上盘，其具有沿着厚度方向的流体入口，流体通过所述流体入口被引入到内部; 下盘，层压到上盘，并且在厚度方向上具有流体出口，流体通过该流体出口到外部; 检测单元设置在每个上盘和下盘上并且包括具有涂覆有用于捕获生物分子的材料的表面的球形微珠; 以及沿着上盘和下盘中的每一个的边缘设置的通孔，使得流体在上盘和下盘之间流动。根据本发明，一种生物分子检测装置，其在罕见细胞的检测中具有优异的性能，并且具有生物芯片结构以确保质量大量生产;以及生物分子测量系统，其可以准确且容易地测量由生物分子检测装置捕获的生物分子可以提供。

5. 发明授权

US07935970B2 Nitride semiconductor light emitting diode 失效
标题翻译：氮化物半导体发光二极管
公开(公告)号：US07935970B2
公开(公告)日：2011-05-03
申请号：US12258292
申请日：2008-10-24
申请人： Sang-Yeob Song , Ji Hye Shim , Bum Joon Kim
发明人： Sang-Yeob Song , Ji Hye Shim , Bum Joon Kim
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , H01L33/02
摘要： A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.
摘要翻译：氮化物半导体发光二极管（LED）包括n型氮化物半导体层; 形成在所述n型氮化物半导体层上的电子发射层，所述电子发射层由包含III族过渡元素的氮化物半导体层组成; 形成在电子发射层上的有源层; 以及形成在有源层上的p型氮化物半导体层。

6. 发明授权

US07851808B2 Nitride semiconductor light emitting diode 失效
标题翻译：氮化物半导体发光二极管
公开(公告)号：US07851808B2
公开(公告)日：2010-12-14
申请号：US12259073
申请日：2008-10-27
申请人： Sang-Yeob Song , Ji Hye Shim , Bum Joon Kim
发明人： Sang-Yeob Song , Ji Hye Shim , Bum Joon Kim
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , H01L33/02
摘要： A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.
摘要翻译：氮化物半导体发光二极管（LED）包括n型氮化物半导体层; 形成在所述n型氮化物半导体层上的电子发射层，所述电子发射层由包含III族过渡元素的氮化物半导体层组成; 形成在电子发射层上的有源层; 以及形成在有源层上的p型氮化物半导体层。

7. 发明申请

US20120060887A1 ASYMMETRIC THERMOELECTRIC MODULE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：不对称热电模块及其制造方法
公开(公告)号：US20120060887A1
公开(公告)日：2012-03-15
申请号：US12963185
申请日：2010-12-08
申请人： Yong Suk Kim , Jeong Ho Yoon , Sung Ho Lee , Dong Hyeok Choi , Ji Hye Shim , Kyu Hwan Oh
发明人： Yong Suk Kim , Jeong Ho Yoon , Sung Ho Lee , Dong Hyeok Choi , Ji Hye Shim , Kyu Hwan Oh
IPC分类号： H01L35/30 , H01L21/04 , H01L35/34
CPC分类号： H01L35/32 , H01L35/34
摘要： Disclosed is an asymmetric thermoelectric module, which includes a plurality of first-type thermoelectric semiconductor elements, a plurality of second-type thermoelectric semiconductor elements, a plurality of pairs of assistant layers having different melting points and disposed on the upper and lower surfaces of the first-type and second-type thermoelectric semiconductor elements, and a pair of substrates.
摘要翻译：公开了一种不对称热电模块，其包括多个第一类型热电半导体元件，多个第二类型热电半导体元件，多对辅助层，其具有不同的熔点并且设置在该第一类型热电半导体元件的上表面和下表面上第一型和第二型热电半导体元件，以及一对基板。

8. 发明申请

US20090095965A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE 失效
公开(公告)号：US20090095965A1
公开(公告)日：2009-04-16
申请号：US12258292
申请日：2008-10-24
申请人： Sang-Yeob SONG , Ji Hye Shim , Bum Joon Kim
发明人： Sang-Yeob SONG , Ji Hye Shim , Bum Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02
摘要： A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

9. 发明申请

US20090090921A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE 失效
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20090090921A1
公开(公告)日：2009-04-09
申请号：US12258328
申请日：2008-10-24
申请人： Sang-Yeob SONG , Ji Hye Shim , Bum Joon Kim
发明人： Sang-Yeob SONG , Ji Hye Shim , Bum Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02
摘要： A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.
摘要翻译：氮化物半导体发光二极管（LED）包括n型氮化物半导体层; 形成在所述n型氮化物半导体层上的电子发射层，所述电子发射层由包含III族过渡元素的氮化物半导体层组成; 形成在电子发射层上的有源层; 以及形成在有源层上的p型氮化物半导体层。

10. 发明申请

US20080042161A1 Nitride semiconductor light emitting diode 审中-公开
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20080042161A1
公开(公告)日：2008-02-21
申请号：US11797492
申请日：2007-05-03
申请人： Jae-Woong Han , Ji Hye Shim
发明人： Jae-Woong Han , Ji Hye Shim
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： A nitride semiconductor light emitting diode includes: an n-type clad layer; an active layer formed on the n-type clad layer; an electron blocking layer formed on the active layer, the electron blocking layer being composed of a p-type nitride semiconductor including a transition element of group III; and a p-type clad layer formed on the electron blocking layer.
摘要翻译：氮化物半导体发光二极管包括：n型覆盖层; 形成在n型覆层上的有源层; 形成在所述有源层上的电子阻挡层，所述电子阻挡层由包含III族过渡元素的p型氮化物半导体构成; 以及形成在电子阻挡层上的p型覆盖层。

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