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    • 5. 发明申请
    • Sensor semiconductor device and manufacturing method thereof
    • 传感器半导体器件及其制造方法
    • US20080296716A1
    • 2008-12-04
    • US12151570
    • 2008-05-07
    • Chang-Yueh ChanChien-Ping HuangChih-Ming HuangCheng-Hsu HsiaoChun-Chi Ke
    • Chang-Yueh ChanChien-Ping HuangChih-Ming HuangCheng-Hsu HsiaoChun-Chi Ke
    • H01L21/50H01L23/00
    • H01L21/56H01L23/3114H01L27/14618H01L27/14683H01L2224/0554H01L2224/0557H01L2224/05571H01L2224/05573H01L2224/16H01L2924/00014H01L2924/01079H01L2924/15311H01L2224/05599H01L2224/0555H01L2224/0556
    • A sensor semiconductor device and a manufacturing method thereof are disclosed. The method includes: providing a light-permeable carrier board with a plurality of metallic circuits; electrically connecting the metallic circuits to a plurality of sensor chips through conductive bumps formed on the bond pads of the sensor chips, wherein the sensor chips have been previously subjected to thinning and chip probing; filling a first dielectric layer between the sensor chips to cover the metallic circuits and peripheries of the sensor chips; forming a second dielectric layer on the sensor chips and the first dielectric layer; forming grooves between the sensor chips for exposing the metallic circuits such that a plurality of conductive traces electrically connected to the metallic circuits can be formed on the second dielectric layer; and singulating the sensor chips to form a plurality of sensor semiconductor devices. The present invention overcomes the drawbacks of breakage of trace connection due to a sharp angle formed at joints, poor electrical connection and chip damage due to an alignment error in cutting from the back of the wafer, as well as an increased cost due to multiple sputtering processes for forming traces.
    • 公开了一种传感器半导体器件及其制造方法。 该方法包括:提供具有多个金属电路的透光性载板; 通过形成在传感器芯片的接合焊盘上的导电凸块将金属电路电连接到多个传感器芯片,其中传感器芯片已经预先经受了薄化和芯片探测; 在传感器芯片之间填充第一电介质层以覆盖金属电路和传感器芯片的周边; 在所述传感器芯片和所述第一介电层上形成第二电介质层; 在所述传感器芯片之间形成用于暴露所述金属电路的槽,使得可以在所述第二介电层上形成电连接到所述金属电路的多个导电迹线; 并且分离传感器芯片以形成多个传感器半导体器件。 本发明克服了由于在接头处形成的尖角导致的迹线连接断裂的缺点,由于从晶片背面的切割中的对准误差导致的不良电连接和芯片损坏以及由于多次溅射而导致的成本增加 形成痕迹的过程。