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1. 发明授权

US06487191B1 Power control apparatus and method with interference reduction during soft handoff in CDMA cellular communication systems 有权
标题翻译：在CDMA蜂窝通信系统中软切换期间具有干扰减少的功率控制装置和方法
公开(公告)号：US06487191B1
公开(公告)日：2002-11-26
申请号：US09187778
申请日：1998-11-06
申请人： Chang Soon Kang , Seon Shim Cheon , Ki Seok Kim , Cheol Hye Cho
发明人： Chang Soon Kang , Seon Shim Cheon , Ki Seok Kim , Cheol Hye Cho
IPC分类号： H04J1300
CPC分类号： H04W52/143 , H04W36/18 , H04W52/24 , H04W52/40 , H04W52/52
摘要： The present invention relates to a power control method for forward links in the CDMA cellular mobile communication system and a structure of a mobile station and a base station for the control. The power control method for forward links and a structure of a base station and a mobile station for the control in the CDMA cellular mobile communication system is presented which can increase forward link capacity as a mobile station measures signals of forward traffic channels from base stations in soft handoff and requests power increase/decrease divided for each corresponding base station and the base station adjusts transmit power of corresponding traffic channels depending on the forward link state.
摘要翻译：本发明涉及CDMA蜂窝移动通信系统中的前向链路的功率控制方法以及用于控制的移动站和基站的结构。提出了用于CDMA蜂窝移动通信系统中的用于前向链路的功率控制方法和用于基站的移动站的基站和移动站的结构，当移动站测量来自基站的前向业务信道的信号时，可以增加前向链路容量软切换并请求每个相应基站的功率增加/减少，基站根据前向链路状态来调整相应业务信道的发射功率。

2. 发明授权

US6038220A Method and apparatus of forward traffic channel power control for CDMA wireless local loop system 失效
标题翻译： CDMA无线本地环路系统前向业务信道功率控制方法及装置
公开(公告)号：US6038220A
公开(公告)日：2000-03-14
申请号：US961326
申请日：1997-10-30
申请人： Chang Soon Kang , Hun Lee , Cheol Hoi Cho , Ki Seok Kim
发明人： Chang Soon Kang , Hun Lee , Cheol Hoi Cho , Ki Seok Kim
IPC分类号： H04B1/04 , H04B7/005 , H04B7/12 , H04B7/26 , H04J13/00 , H04W52/04 , H04W52/24 , H04W52/34 , H04W52/36 , H04W84/14 , H04J1/16 , H04B1/00 , H04B7/00
CPC分类号： H04W52/343 , H04W52/24 , H04W52/346 , H04W84/14 , Y02B60/50
摘要： The present invention relates to a method and apparatus of a forward traffic channel power control for a code division multiple access (CDMA) wireless local loop system not having a hand-off function. The present invention distinguishes between a normal mode and a threshold mode in a CDMA wireless local loop. Here, the total power is lower than a predetermined power threshold value in the normal mode, and the total power arrives at the predetermined power threshold value in the threshold mode. In addition, the present invention varies method of increasing/reducing the forward traffic channel power according to the determined mode. As a result, method and apparatus according to the present invention effectively reduces the forward link interference signal at nearby cells, and provides a proper traffic quality.
摘要翻译：本发明涉及一种不具有切换功能的码分多址（CDMA）无线本地环路系统的前向业务信道功率控制的方法和装置。本发明在CDMA无线本地环路中区分正常模式和阈值模式。这里，总功率低于正常模式下的预定功率阈值，并且总功率在阈值模式下达到预定功率阈值。此外，本发明根据所确定的模式改变增加/减少前向业务信道功率的方法。结果，根据本发明的方法和装置有效地减少了附近小区的前向链路干扰信号，并且提供了适当的业务质量。

3. 发明授权

US10177279B2 Light-emitting diode with multiple N contact structure 有权
公开(公告)号：US10177279B2
公开(公告)日：2019-01-08
申请号：US15608141
申请日：2017-05-30
申请人： Tae Yeon Seong , Ki Seok Kim , Junyong Jin
发明人： Tae Yeon Seong , Ki Seok Kim , Junyong Jin
IPC分类号： H01L33/10 , H01L33/38 , H01L33/24
摘要： Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.

4. 发明授权

US08877542B2 Nanostructure array substrate, method for fabricating the same and dye-sensitized solar cell using the same 有权
标题翻译：纳米结构阵列基板，其制造方法和使用其的染料敏化太阳能电池
公开(公告)号：US08877542B2
公开(公告)日：2014-11-04
申请号：US13325505
申请日：2011-12-14
申请人： Gun Young Jung , Hui Song , Ki Seok Kim
发明人： Gun Young Jung , Hui Song , Ki Seok Kim
IPC分类号： H01L31/18 , H01M14/00 , H01G9/20
CPC分类号： H01M14/005 , H01G9/2031 , H01G9/2036 , H01G9/204 , Y02E10/542
摘要： Disclosed are a nanostructure array substrate, a method for fabricating the same, and a dye-sensitized solar cell by using the same. The nanostructure array substrate includes a plurality of metal oxide nanostructures vertically aligned on the substrate while being separated from each other. The metal oxide nanostructures include nanorods having a ZnO core/TiO2 shell structure or TiO2 nanotubes. The method includes the steps of forming ZnO nanorods vertically aligned from a seed layer formed on a substrate; and coating a TiO2 sol on the ZnO nanorods and sintering the ZnO nanorods to form nanorods having a ZnO core/TiO2 shell structure. The transparency and flexibility of the substrate are ensured. The photoelectric conversion efficiency of the solar cell is improved if the nanostructure array substrate is employed in the photo electrode of the dye-sensitized solar cell.
摘要翻译：公开了纳米结构阵列基板，其制造方法和使用该染料敏化太阳能电池的染料敏化太阳能电池。纳米结构阵列衬底包括在衬底上垂直对准的多个金属氧化物纳米结构，同时彼此分离。金属氧化物纳米结构包括具有ZnO核/ TiO 2壳结构或TiO 2纳米管的纳米棒。该方法包括以下步骤：从形成在衬底上的晶种层垂直取向的ZnO纳米棒; 并在ZnO纳米棒上涂覆TiO 2溶胶并烧结ZnO纳米棒以形成具有ZnO核/ TiO2壳结构的纳米棒。确保了基材的透明性和柔韧性。如果在染料敏化太阳能电池的光电极中使用纳米结构阵列基板，则太阳能电池的光电转换效率得到改善。

5. 发明申请

US20100254270A1 SIGNAL TRANSMITTING APPARATUS AND SIGNAL TRANSMITTING METHOD 有权
标题翻译：信号发送装置和信号发送方法
公开(公告)号：US20100254270A1
公开(公告)日：2010-10-07
申请号：US12735075
申请日：2008-07-11
申请人： Seok-Jin Lee , Ki Seok Kim , Young-II Kim
发明人： Seok-Jin Lee , Ki Seok Kim , Young-II Kim
IPC分类号： H04L12/26
CPC分类号： G06F13/1689
摘要： A signal transmitting apparatus includes: a plurality of data transmission lines that transmit output data to a memory; a plurality of delay units that are correspondingly connected to the plurality of data transmission lines, that delay test data according to a delay signal for a predetermined time, and that output the delayed test data to each of the data transmission lines; and a transmitting/receiving controller that compares the stored data in the memory with the test data to adjust the delay signal, and that outputs the adjusted delay signal to each of the plurality of delay units. With this configuration, when data is transmitted to a memory through a data bus, a delay value can be adjusted among a plurality of signal lines constituting a data bus, and thus signal transmission can be performed uniformly.
摘要翻译：信号发送装置包括：将输出数据发送到存储器的多条数据传输线; 多个延迟单元，其相应地连接到所述多个数据传输线，其根据延迟信号将测试数据延迟预定时间，并且将延迟的测试数据输出到每个数据传输线; 以及发送/接收控制器，其将存储器中存储的数据与测试数据进行比较，以调整延迟信号，并将经调整的延迟信号输出到多个延迟单元中的每一个。利用这种配置，当通过数据总线将数据发送到存储器时，可以在构成数据总线的多个信号线之间调整延迟值，从而可以均匀地执行信号传输。

6. 发明授权

US10333026B2 Lateral light emitting diode device and method for fabricating the same 有权
公开(公告)号：US10333026B2
公开(公告)日：2019-06-25
申请号：US15629020
申请日：2017-06-21
申请人： Tae Yeon Seong , Ki Seok Kim , Sung-joo Song
发明人： Tae Yeon Seong , Ki Seok Kim , Sung-joo Song
IPC分类号： H01L33/10 , H01L33/00 , H01L33/32 , H01L33/20 , H01L33/38
摘要： Provided are a lateral light emitting diode device and a method for fabricating the same. The lateral light emitting diode device includes a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer, a plurality of holes being formed in the p-type GaN layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a seed layer disposed on bottom surfaces of the plurality of holes; metal oxide structures grown on the seed layer in a crystalline state to fill the plurality of holes; and an n-electrode disposed on the n-type GaN layer exposed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer.

7. 发明授权

US08463274B2 Resource allocation method and device 有权
标题翻译：资源分配方法和设备
公开(公告)号：US08463274B2
公开(公告)日：2013-06-11
申请号：US12686088
申请日：2010-01-12
申请人： Ki Seok Kim , Jisoo Park , Young-Il Kim
发明人： Ki Seok Kim , Jisoo Park , Young-Il Kim
IPC分类号： H04W36/00
CPC分类号： H04W28/16
摘要： The present invention relates a resource allocation method and a resource allocation device. According to an exemplary embodiment of the present invention, a resource allocation method of a wireless communication system includes: allocating a resource to a first base station; determining whether or not a second cell that is smaller than a first cell is provided in a first cell region managed by the first base station; reducing the resource allocated to the first base station when the second cell is provided; and allocating resources remaining after reducing the resource to a second base station that manages the second cell.
摘要翻译：本发明涉及资源分配方法和资源分配装置。根据本发明的示例性实施例，无线通信系统的资源分配方法包括：向第一基站分配资源; 确定在由所述第一基站管理的第一小区中是否提供小于第一小区的第二小区; 当提供第二小区时，减少分配给第一基站的资源; 以及在将所述资源减少到管理所述第二小区的第二基站之后分配剩余的资源。

8. 发明授权

US07920826B2 Method of forming frame in multi-hop relay system and system for implementing the method 有权
标题翻译：在多跳中继系统中形成帧的方法和实现该方法的系统
公开(公告)号：US07920826B2
公开(公告)日：2011-04-05
申请号：US11930514
申请日：2007-10-31
申请人： Ki Seok Kim , Seok Jin Lee , Young Il Kim
发明人： Ki Seok Kim , Seok Jin Lee , Young Il Kim
IPC分类号： H04B7/14
CPC分类号： H04B7/2606 , H04B7/155
摘要： A method of forming a frame in a Mobile Multi-hop Relay (MMR) system, and a system for implementing the method are provided. In a multi-hop relay system, when a relay station of a specific layer receives data, the relay station receives data from both a higher layer and a lower layer. When the relay station transmits data, the relay station transmits data to both the higher layer and the lower layer. By doing so, data reception and data transmission are exclusively performed without interfering with each other, and the method and the system are easily applied to the multi-hop MMR system.
摘要翻译：提供了一种在移动多跳中继（MMR）系统中形成帧的方法以及用于实现该方法的系统。在多跳中继系统中，当特定层的中继站接收数据时，中继站从较高层和下层接收数据。当中继站发送数据时，中继站向上层和下层发送数据。通过这样做，数据接收和数据传输被排他地执行，而不会彼此干扰，并且该方法和系统容易地应用于多跳MMR系统。

9. 发明授权

US10403791B2 Vertical light-emitting diode device and method of fabricating the same 有权
公开(公告)号：US10403791B2
公开(公告)日：2019-09-03
申请号：US15629051
申请日：2017-06-21
申请人： Tae Yeon Seong , Ki Seok Kim , Sung-joo Song
发明人： Tae Yeon Seong , Ki Seok Kim , Sung-joo Song
IPC分类号： H01L21/02 , H01L29/20 , H01L29/02 , H01L33/24 , H01L33/00 , H01L33/32 , H01L33/20 , H01L33/30 , H01L33/40 , H01L33/42 , H01L33/38
摘要： A vertical light-emitting diode device and a method of fabricating the same are provided. The device may include a conductive substrate serving as a p electrode, a p-type GaN layer provided on the conductive substrate, an active layer provided on the p-type GaN layer, an n-type GaN layer provided on the active layer, an n electrode pattern provided on the n-type GaN layer, a metal oxide structure filling a plurality of holes formed in the n-type GaN layer, and a seed layer provided on bottom surfaces of the holes and used to as a seed in a crystal growth process of the metal oxide structure.

10. 发明授权

US10181550B2 Method for fabricating high-efficiency light emitting diode having light emitting window electrode structure 有权
公开(公告)号：US10181550B2
公开(公告)日：2019-01-15
申请号：US15628195
申请日：2017-06-20
申请人： Tae Yeon Seong , Ki Seok Kim , Hwan Kyo Kim , Dae-Hyun Kim
发明人： Tae Yeon Seong , Ki Seok Kim , Hwan Kyo Kim , Dae-Hyun Kim
IPC分类号： H01L33/32 , H01L33/36 , H01L33/38 , H01L33/00 , H01L33/20
摘要： A lateral light emitting diode device includes: a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a MESA region formed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer; a transparent window layer disposed on the n-type GaN layer in the entire or part of the MESA region; a plurality of contact plugs which is in contact with the n-type GaN layer through the transparent window layer; and an n-electrode disposed on the transparent window layer to connect the plurality of contact plugs to each other.

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