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1. 发明授权

US6111808A Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US6111808A
公开(公告)日：2000-08-29
申请号：US258795
申请日：1999-03-01
申请人： Chang Man Khang , Young Hyun Jun
发明人： Chang Man Khang , Young Hyun Jun
IPC分类号： G11C11/418 , G11C8/10 , G11C11/401 , G11C11/407 , G11C11/408 , G11C8/00
CPC分类号： G11C8/10 , G11C11/4087
摘要： Disclose is a semiconductor memory device including a plurality of memory cell arrays, row and column decoders for selecting/driving each memory cell, and a plurality of bit line sensing amplifier arrays for sensing data of each memory cell, the semiconductor memory device comprising: a plurality of sub word line driver sections for driving each memory cell with a sub word line enable selection signal (SWLE) decoded by LSB address and with a global word line signal (GWLb) decoded by MSB address in the row decoder; a row decoding precharge signal generating section (RDPRi/VBFi) for applying a precharge signal to the row decoder and a voltage Vbb to the GWLb signal by means of the MSB address PXb; a level shifting section for shifting and transmitting an output signal from the column decoder to column selection lines which connects the column decoder with the bit line sensing amplifier array in series; and a data input/output controlling section for selectively applying an active signal to the bit line sensing amplifier array according to a level of the column selection line.
摘要翻译： Disclose是包括多个存储单元阵列，用于选择/驱动每个存储单元的行和列解码器以及用于感测每个存储单元的数据的多位位线检测放大器阵列的半导体存储器件，该半导体存储器件包括：多个子字线驱动器部分，用于通过LSB地址解码的子字线使能选择信号（SWLE）和行解码器中由MSB地址解码的全局字线信号（GWLb）来驱动每个存储器单元; 用于通过MSB地址PXb向行解码器施加预充电信号的行解码预充电信号产生部分（RDPRi / VBFi）和对GWLb信号的电压Vbb; 电平移位部分，用于将来自列解码器的输出信号移位和发送到将列解码器与位线感测放大器阵列串联连接的列选择线; 以及数据输入/输出控制部分，用于根据列选择线的电平有选择地将有效信号施加到位线感测放大器阵列。

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