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1. 发明申请

US20100054036A1 Methods of precharging non-volatile memory devices during a programming operation and memory devices programmed thereby 有权
标题翻译：在编程操作期间对非易失性存储器件进行预充电的方法和由此编程的存储器件
公开(公告)号：US20100054036A1
公开(公告)日：2010-03-04
申请号：US12583811
申请日：2009-08-26
申请人： Chang Hyun Lee , Dong Dae Kim , Byung In Choi
发明人： Chang Hyun Lee , Dong Dae Kim , Byung In Choi
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C11/5628 , G11C16/0483
摘要： Embodiments are directed to a method of programming a semiconductor memory device, the memory device including: a plurality of memory cell transistors arranged in a plurality of transistor strings; a plurality of word lines, each word line connected to a corresponding memory cell transistor of each of the transistor strings; and a plurality of bit lines, each bit line connected to at least one of the transistor strings, the method comprising: applying a first voltage, and then applying a programming voltage to a selected word line corresponding to the selected memory cell transistor; and in advance of applying the first voltage to the selected word line, applying a second voltage to at least one neighboring word line that neighbors the selected word line, the neighboring word line connected to a neighboring, unselected memory cell transistor of the selected transistor string, to ensure precharging of a channel region of another, unselected transistor string between a first, unselected transistor of the unselected transistor string connected to the neighboring word line and a second, unselected transistor of the unselected transistor string connected to the selected word line, the first, unselected transistor neighboring the second, unselected transistor in the unselected transistor string.
摘要翻译：实施例涉及一种编程半导体存储器件的方法，该存储器件包括：以多个晶体管串排列的多个存储单元晶体管; 多个字线，每个字线连接到每个晶体管串的对应的存储单元晶体管; 和多个位线，每个位线连接到晶体管串中的至少一个，所述方法包括：施加第一电压，然后将编程电压施加到对应于所选择的存储单元晶体管的选定字线; 并且在对所选择的字线施加第一电压之前，向邻近所选字线的至少一个相邻字线施加第二电压，连接到所选晶体管串的相邻未选择的存储单元晶体管的相邻字线以确保连接到相邻字线的未选择晶体管串的第一未选择晶体管与连接到所选字线的未选择晶体管串的第二未选择晶体管之间的另一未选择晶体管串的通道区域的预充电，首先，与未选择的晶体管串中的第二未选择晶体管相邻的未选择的晶体管。

2. 发明授权

US08385115B2 Methods of precharging non-volatile memory devices during a programming operation and memory devices programmed thereby 有权
标题翻译：在编程操作期间对非易失性存储器件进行预充电的方法和由此编程的存储器件
公开(公告)号：US08385115B2
公开(公告)日：2013-02-26
申请号：US12583811
申请日：2009-08-26
申请人： Chang Hyun Lee , Dong Dae Kim , Byung In Choi
发明人： Chang Hyun Lee , Dong Dae Kim , Byung In Choi
IPC分类号： G11C11/34
CPC分类号： G11C11/5628 , G11C16/0483
摘要： Embodiments are directed to a method of programming a semiconductor memory device, the memory device including: a plurality of memory cell transistors arranged in a plurality of transistor strings; a plurality of word lines, each word line connected to a corresponding memory cell transistor of each of the transistor strings; and a plurality of bit lines, each bit line connected to at least one of the transistor strings, the method comprising: applying a first voltage, and then applying a programming voltage to a selected word line corresponding to the selected memory cell transistor; and in advance of applying the first voltage to the selected word line, applying a second voltage to at least one neighboring word line that neighbors the selected word line, the neighboring word line connected to a neighboring, unselected memory cell transistor of the selected transistor string, to ensure precharging of a channel region of another, unselected transistor string between a first, unselected transistor of the unselected transistor string connected to the neighboring word line and a second, unselected transistor of the unselected transistor string connected to the selected word line, the first, unselected transistor neighboring the second, unselected transistor in the unselected transistor string.
摘要翻译：实施例涉及一种编程半导体存储器件的方法，该存储器件包括：以多个晶体管串排列的多个存储单元晶体管; 多个字线，每个字线连接到每个晶体管串的对应的存储单元晶体管; 和多个位线，每个位线连接到晶体管串中的至少一个，所述方法包括：施加第一电压，然后将编程电压施加到对应于所选择的存储单元晶体管的选定字线; 并且在对所选择的字线施加第一电压之前，向邻近所选字线的至少一个相邻字线施加第二电压，连接到所选晶体管串的相邻未选择的存储单元晶体管的相邻字线以确保连接到相邻字线的未选择晶体管串的第一未选择晶体管与连接到所选字线的未选择晶体管串的第二未选择晶体管之间的另一未选择晶体管串的通道区域的预充电，首先，与未选择的晶体管串中的第二未选择晶体管相邻的未选择的晶体管。

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