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    • 7. 发明授权
    • Method for forming diffusion barrier layers
    • 形成扩散阻挡层的方法
    • US6069073A
    • 2000-05-30
    • US126094
    • 1998-07-30
    • Youn Tae KimChi Hoon JunJong Tae Baek
    • Youn Tae KimChi Hoon JunJong Tae Baek
    • C23C14/58C23C28/00H01L21/285H01L21/768H01L21/28
    • H01L21/76856H01L21/28518H01L21/76841H01L21/76855
    • An improved method for forming diffusion barrier layers for sub-micron connects in integrated circuits is disclosed. The dual diffusion barriers is easily formed according to two-step annealing processes. The anneal includes two anneal cycles or steps, each cycle is performed at a separate and distinct temperature cycles. Each cycle is performed in the presence of ammonia (NH3) or nitrogen ambient. As a result of the first low-temperature cycle, a nitridation occurs at the upper surface to form a binary diffusion barrier layer. As a result of the second high-temperature cycle, an out-diffusion of silicon ions occurs at the lower surface to form a ternary alloys. The dual diffusion barriers obtained by a simple and easy two-step anneal processing exhibits an improved barrier performance. Furthermore, it is possible to form highly stable multilevel interconnections without any deterioration problems by reducing the sophisticated processing steps.
    • 公开了一种用于在集成电路中形成用于亚微米连接的扩散阻挡层的改进方法。 根据两步退火工艺容易形成双扩散阻挡层。 退火包括两个退火循环或步骤,每个循环在单独且不同的温度循环下进行。 每个循环在氨(NH 3)或氮气氛下进行。 作为第一低温循环的结果,在上表面发生氮化,形成二元扩散阻挡层。 作为第二高温循环的结果,在下表面发生硅离子的扩散,形成三元合金。 通过简单且容易的两步退火处理获得的双扩散阻挡层显示出改进的阻挡性能。 此外,通过减少复杂的处理步骤,可以形成高度稳定的多电平互连而没有任何劣化问题。