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1. 发明授权

US08200427B2 Method for providing POI information for mobile terminal and apparatus thereof 有权
标题翻译：用于提供移动终端的POI信息的方法及其装置
公开(公告)号：US08200427B2
公开(公告)日：2012-06-12
申请号：US12483029
申请日：2009-06-11
申请人： Chae-Guk Cho , Ki-Hyung Lee
发明人： Chae-Guk Cho , Ki-Hyung Lee
IPC分类号： G01C21/00 , G01C21/34 , G01C21/36
CPC分类号： G01C21/3602 , G01C21/3614 , G01C21/3647 , G01C21/3679
摘要： A method and apparatus for providing point of interest (POI) information of a mobile terminal are disclosed to extract and provide POI information and/or road information included in an image captured by a camera. Location information of an image capture place and image capture direction information are read from the digital photo image, the POI information corresponding to the location and image capture direction information is extracted from map data, and the extracted POI information is displayed on the digital photo image.
摘要翻译：公开了一种用于提供移动终端的兴趣点（POI）信息的方法和装置，以提取和提供包括在由相机拍摄的图像中的POI信息和/或道路信息。从数字照片图像中读取图像捕获位置的位置信息和图像捕获方向信息，从地图数据中提取与位置和图像捕获方向信息相对应的POI信息，并将提取的POI信息显示在数字照片图像上。

2. 发明申请

US20120203460A1 METHOD FOR PROVIDING POI INFORMATION FOR MOBILE TERMINAL AND APPARATUS THEREOF 有权
标题翻译：用于提供移动终端的POI信息的方法及其装置
公开(公告)号：US20120203460A1
公开(公告)日：2012-08-09
申请号：US13450087
申请日：2012-04-18
申请人： Chae-Guk CHO , Ki-Hyung Lee
发明人： Chae-Guk CHO , Ki-Hyung Lee
IPC分类号： G01C21/36 , G09G5/377
CPC分类号： G01C21/3602 , G01C21/3614 , G01C21/3647 , G01C21/3679
摘要： A method and apparatus for providing point of interest (POI) information of a mobile terminal. The method and apparatus extract POI information, where the POI information and/or associated road information is included in an image captured by a camera. Location information of an image capture place and image capture direction information are read from the digital photo image, and the POI information corresponding to the location and image capture direction information is extracted from a map data, and the extracted POI information is thereafter displayed on the digital photo image.
摘要翻译：一种用于提供移动终端的兴趣点（POI）信息的方法和装置。该方法和装置提取POI信息，其中POI信息和/或相关联的道路信息被包括在由照相机拍摄的图像中。从数字照片图像中读取图像拍摄位置的位置信息和图像拍摄方向信息，并且从地图数据中提取与位置和图像拍摄方向信息相对应的POI信息，然后将所提取的POI信息显示在数码照片图像。

3. 发明授权

US08401785B2 Method for providing POI information for mobile terminal and apparatus thereof 有权
标题翻译：用于提供移动终端的POI信息的方法及其装置
公开(公告)号：US08401785B2
公开(公告)日：2013-03-19
申请号：US13450087
申请日：2012-04-18
申请人： Chae-Guk Cho , Ki-Hyung Lee
发明人： Chae-Guk Cho , Ki-Hyung Lee
IPC分类号： G01C21/00 , G01C21/34 , G01C21/36
CPC分类号： G01C21/3602 , G01C21/3614 , G01C21/3647 , G01C21/3679
摘要： A method and apparatus for providing point of interest (POI) information of a mobile terminal. The method and apparatus extract POI information, where the POI information and/or associated road information is included in an image captured by a camera. Location information of an image capture place and image capture direction information are read from the digital photo image, and the POI information corresponding to the location and image capture direction information is extracted from a map data, and the extracted POI information is thereafter displayed on the digital photo image.
摘要翻译：一种用于提供移动终端的兴趣点（POI）信息的方法和装置。该方法和装置提取POI信息，其中POI信息和/或相关联的道路信息被包括在由照相机拍摄的图像中。从数字照片图像中读取图像拍摄位置的位置信息和图像拍摄方向信息，并且从地图数据中提取与位置和图像拍摄方向信息相对应的POI信息，然后将所提取的POI信息显示在数码照片图像。

4. 发明授权

US07202522B2 Erasable and programmable read only memory (EPROM) cell of an EPROM device and method of manufacturing a semiconductor device having the EPROM cell 失效
标题翻译： EPROM装置的可擦除可编程只读存储器（EPROM）单元和具有EPROM单元的半导体器件的制造方法
公开(公告)号：US07202522B2
公开(公告)日：2007-04-10
申请号：US10973894
申请日：2004-10-26
申请人： Ki-Hyung Lee , Seung-Han Yoo
发明人： Ki-Hyung Lee , Seung-Han Yoo
IPC分类号： H01L21/70
CPC分类号： H01L27/115 , H01L27/11526 , H01L27/11546
摘要： Provided is an erasable and programmable read only memory (EPROM) device in which a plasma enhanced oxide (PEOX) film covers an upper surface of a floating gate in a single poly one time programmable (OTP) cell and a method of manufacturing a semiconductor device having the same. The semiconductor device comprises a substrate having an OTP cell region, on which a floating gate is formed for making an OTP cell transistor, and a main chip region, on which a gate of a transistor is formed. A PEOX film is formed on the OTP cell region and the main chip region. The PEOX film covers the floating gate in a close state and covers the gate by a predetermined distance. A silicon oxy nitride (SiON) film is interposed between the gate and the PEOX film in the main chip region.
摘要翻译：提供了一种可擦除和可编程的只读存储器（EPROM）器件，其中等离子体增强氧化物（PEOX）膜覆盖单个多时间可编程（OTP）单元中的浮动栅极的上表面，以及制造半导体器件的方法有同样的半导体器件包括具有OTP单元区域的衬底，在其上形成用于形成OTP单元晶体管的浮动栅极和形成晶体管的栅极的主芯片区域。在OTP单元区域和主芯片区域上形成PEOX膜。 PEOX膜在关闭状态下覆盖浮动栅极并且将栅极覆盖预定距离。在主芯片区域中的栅极和PEOX膜之间插入有氮氧化硅（SiON）膜。

5. 发明授权

US08752201B2 Apparatus and method for managing digital rights through hooking a kernel native API 有权
标题翻译：通过钩住内核本机API来管理数字权利的装置和方法
公开(公告)号：US08752201B2
公开(公告)日：2014-06-10
申请号：US13294422
申请日：2011-11-11
申请人： Ki-Hyung Lee , Gil Lee , Heoung-Keun Moon , Hwan-Woon Yeo , Hwang-Hoo Kim , Joon-Cheol Park , Jae-Hee Park
发明人： Ki-Hyung Lee , Gil Lee , Heoung-Keun Moon , Hwan-Woon Yeo , Hwang-Hoo Kim , Joon-Cheol Park , Jae-Hee Park
IPC分类号： G06F21/00
CPC分类号： G06F21/10 , G06F2221/0735
摘要： Provided are an apparatus and method for managing digital rights. An agent unit manages application programs to which DRM is to be applied and rights to contents processed by the application programs to which DRM is to be applied, and encrypt and decrypt the contents processed by the application programs. A rights management unit authenticates a user and manages a user right to the contents processed by the application programs. A kernel API hooking unit monitors input/output of a file through hooking kernel native APIs, requests the rights management unit to verify the user right to the contents to be processed, and requests the agent unit to encrypt or decrypt the contents when the user right to the contents to be processed is verified.
摘要翻译：提供了一种用于管理数字权利的装置和方法。代理单元管理要应用DRM的应用程序和对应用DRM应用程序处理的内容的权限，并对由应用程序处理的内容进行加密和解密。权限管理单元对用户进行认证并管理由应用程序处理的内容的用户权限。内核API钩子单元通过挂接内核原生API来监视文件的输入/输出，请求权限管理单元验证用户对待处理内容的权限，并在用户权限时请求代理单元加密或解密内容对要处理的内容进行验证。

6. 发明授权

US07491657B2 Method of manufacturing a semiconductor device having a one time programmable (OTP) erasable and programmable read only memory (EPROM) cell 失效
标题翻译：制造具有一次可编程（OTP）可擦除和可编程只读存储器（EPROM）单元的半导体器件的方法
公开(公告)号：US07491657B2
公开(公告)日：2009-02-17
申请号：US11681429
申请日：2007-03-02
申请人： Ki-Hyung Lee , Seung-Han Yoo
发明人： Ki-Hyung Lee , Seung-Han Yoo
IPC分类号： H01L21/70
CPC分类号： H01L27/115 , H01L27/11526 , H01L27/11546
摘要： Provided is an erasable and programmable read only memory (EPROM) device in which a plasma enhanced oxide (PEOX) film covers an upper surface of a floating gate in a single poly one time programmable (OTP) cell and a method of manufacturing a semiconductor device having the same. The semiconductor device comprises a substrate having an OTP cell region, on which a floating gate is formed for making an OTP cell transistor, and a main chip region, on which a gate of a transistor is formed. A PEOX film is formed on the OTP cell region and the main chip region. The PEOX film covers the floating gate in a close state and covers the gate by a predetermined distance. A silicon oxy nitride (SiON) film Is interposed between the gate and the PEOX film in the main chip region.
摘要翻译：提供了一种可擦除和可编程的只读存储器（EPROM）器件，其中等离子体增强氧化物（PEOX）膜覆盖单个多时间可编程（OTP）单元中的浮动栅极的上表面，以及制造半导体器件的方法有同样的半导体器件包括具有OTP单元区域的衬底，在其上形成用于制造OTP单元晶体管的浮置栅极和形成晶体管的栅极的主芯片区域。在OTP单元区域和主芯片区域上形成PEOX膜。 PEOX膜在关闭状态下覆盖浮动栅极并且将栅极覆盖预定距离。在主芯片区域中的栅极和PEOX膜之间插入氮氧化硅（SiON）膜。

7. 发明申请

US20070148871A1 ERASABLE AND PROGRAMMABLE READ ONLY MEMORY (EPROM) CELL OF AN EPROM DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING THE EPROM CELL 失效
标题翻译：可读和可编程只读存储器（EPROM）单元的EPROM器件和制造具有EPROM单元的半导体器件的方法
公开(公告)号：US20070148871A1
公开(公告)日：2007-06-28
申请号：US11681429
申请日：2007-03-02
申请人： Ki-Hyung Lee , Seung-Han Yoo
发明人： Ki-Hyung Lee , Seung-Han Yoo
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11526 , H01L27/11546
摘要： Provided is an erasable and programmable read only memory (EPROM) device in which a plasma enhanced oxide (PEOX) film covers an upper surface of a floating gate in a single poly one time programmable (OTP) cell and a method of manufacturing a semiconductor device having the same. The semiconductor device comprises a substrate having an OTP cell region, on which a floating gate is formed for making an OTP cell transistor, and a main chip region, on which a gate of a transistor is formed. A PEOX film is formed on the OTP cell region and the main chip region. The PEOX film covers the floating gate in a close state and covers the gate by a predetermined distance. A silicon oxy nitride (SiON) film Is interposed between the gate and the PEOX film in the main chip region.
摘要翻译：提供了一种可擦除和可编程的只读存储器（EPROM）器件，其中等离子体增强氧化物（PEOX）膜覆盖单个多时间可编程（OTP）单元中的浮动栅极的上表面，以及制造半导体器件的方法有同样的半导体器件包括具有OTP单元区域的衬底，在其上形成用于形成OTP单元晶体管的浮动栅极和形成晶体管的栅极的主芯片区域。在OTP单元区域和主芯片区域上形成PEOX膜。 PEOX膜在关闭状态下覆盖浮动栅极并且将栅极覆盖预定距离。在主芯片区域中的栅极和PEOX膜之间插入氮氧化硅（SiON）膜。

8. 发明申请

US20050093079A1 Erasable and programmable read only memory (EPROM) device and method of manufacturing a semiconductor device having the same 失效
标题翻译：可擦除和可编程只读存储器（EPROM）器件及其制造方法
公开(公告)号：US20050093079A1
公开(公告)日：2005-05-05
申请号：US10973894
申请日：2004-10-26
申请人： Ki-Hyung Lee , Seung-Han Yoo
发明人： Ki-Hyung Lee , Seung-Han Yoo
IPC分类号： H01L27/10 , H01L21/82 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/94
CPC分类号： H01L27/115 , H01L27/11526 , H01L27/11546
摘要： Provided is an erasable and programmable read only memory (EPROM) device in which a plasma enhanced oxide (PEOX) film covers an upper surface of a floating gate in a single poly one time programmable (OTP) cell and a method of manufacturing a semiconductor device having the same. The semiconductor device comprises a substrate having an OTP cell region, on which a floating gate is formed for making an OTP cell transistor, and a main chip region, on which a gate of a transistor is formed. A PEOX film is formed on the OTP cell region and the main chip region. The PEOX film covers the floating gate in a close state and covers the gate by a predetermined distance. A silicon oxy nitride (SiON) film is interposed between the gate and the PEOX film in the main chip region.
摘要翻译：提供了一种可擦除和可编程的只读存储器（EPROM）器件，其中等离子体增强氧化物（PEOX）膜覆盖单个多时间可编程（OTP）单元中的浮动栅极的上表面，以及制造半导体器件的方法有同样的半导体器件包括具有OTP单元区域的衬底，在其上形成用于形成OTP单元晶体管的浮动栅极和形成晶体管的栅极的主芯片区域。在OTP单元区域和主芯片区域上形成PEOX膜。 PEOX膜在关闭状态下覆盖浮动栅极并且将栅极覆盖预定距离。在主芯片区域中的栅极和PEOX膜之间插入有氮氧化硅（SiON）膜。

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