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1. 发明授权

US06587170B2 Liquid crystal display device having a light shielding matrix 有权
标题翻译：具有遮光矩阵的液晶显示装置
公开(公告)号：US06587170B2
公开(公告)日：2003-07-01
申请号：US09854504
申请日：2001-05-15
申请人： Hyunho Shin , Chae Gee Sung , Kouji Takashina
发明人： Hyunho Shin , Chae Gee Sung , Kouji Takashina
IPC分类号： G02F111336
CPC分类号： G02F1/133512 , G02F1/134363
摘要： A liquid crystal display device composed of: a first substrate and a second substrates; a liquid crystal layer provided between the first and second substrates; a plurality of pixel regions provided on the surface opposing the second substrate of the first substrate, each of which pixel regions has at least one pixel electrode and a common electrode for cooperatively applying an electric field in a direction along the surface of the first substrate; and a conductive light shielding matrix provided on the surface opposing the first substrate of the second substrate which light shielding matrix has openings each corresponding to a display region of each of the pixel regions and shades non-display regions other than the pixel regions; in which the light shielding matrix and the common electrode are set to substantially the same voltage.
摘要翻译：一种液晶显示装置，包括：第一基板和第二基板; 设置在第一和第二基板之间的液晶层; 设置在与第一基板的第二基板相对的表面上的多个像素区域，每个像素区域具有至少一个像素电极和用于在沿着第一基板的表面的方向上协同施加电场的公共电极; 以及设置在与所述第二基板的所述第一基板相对的表面上的导电遮光矩阵，所述遮光矩阵具有各自对应于每个所述像素区域的显示区域的开口并遮蔽除所述像素区域之外的非显示区域; 其中遮光矩阵和公共电极被设置为基本上相同的电压。

2. 发明授权

US06278504B1 Thin film transistor for liquid crystal display device having a semiconductor layer's width smaller than a width of the gate, drain and source electrodes 失效
标题翻译：具有半导体层的宽度小于栅极，漏极和源极的宽度的液晶显示装置用薄膜晶体管
公开(公告)号：US06278504B1
公开(公告)日：2001-08-21
申请号：US08787463
申请日：1997-01-22
申请人： Chae Gee Sung
发明人： Chae Gee Sung
IPC分类号： G02F1136
CPC分类号： G02F1/1368
摘要： A thin film transistor for liquid crystal display device including a gate electrode 42 formed on a transparent substrate 41, an insulation layer 43 formed to cover the upper surface of the transparent substrate and the gate electrode, a semiconductor layer 46 formed on the insulating layer in confrontation with the gate electrode, an etching stopper layer 44 formed on the semiconductor layer and a source electrode 49 and a drain electrode 50 disposed adjacent to each other in confrontation on both the sides of the semiconductor layer over the etching stopper layer, the semiconductor layer and the insulation layer is arranged such that the gate electrode is formed to such a size as to conceal the semiconductor layer from the transparent substrate side and the line width of the source electrode and the drain electrode is made larger than the width of the semiconductor layer along the same direction as the line width. With this arrangement, there can be provided a thin film transistor for liquid crystal display device capable of suppressing the leak current of the semiconductor layer and lowering the off-current of the thin film transistor and a liquid crystal display device including the thin film transistor.
摘要翻译：一种用于液晶显示装置的薄膜晶体管，包括形成在透明基板41上的栅电极42，覆盖透明基板的上表面的绝缘层43和栅电极，形成在绝缘层上的半导体层46 与栅极电极对置，在半导体层上形成的蚀刻停止层44和在蚀刻停止层上的半导体层的两侧上相对设置的源电极49和漏电极50，半导体层并且绝缘层被布置成使得栅极形成为使得半导体层从透明基板侧隐藏起来的尺寸，并且使源电极和漏电极的线宽大于半导体层的宽度沿与线宽相同的方向。利用这种布置，可以提供一种能够抑制半导体层的漏电流并降低薄膜晶体管的截止电流的液晶显示装置用薄膜晶体管，以及包含该薄膜晶体管的液晶显示装置。

3. 发明授权

US06271903B1 Liquid crystal display device having a light shielding matrix 失效
标题翻译：具有遮光矩阵的液晶显示装置
公开(公告)号：US06271903B1
公开(公告)日：2001-08-07
申请号：US09012041
申请日：1998-01-22
申请人： Hyunho Shin , Chae Gee Sung , Kouji Takashina
发明人： Hyunho Shin , Chae Gee Sung , Kouji Takashina
IPC分类号： G02F11333
CPC分类号： G02F1/133512 , G02F1/134363
摘要： A liquid crystal display device composed of: a first substrate and a second substrates; a liquid crystal layer provided between the first and second substrates; a plurality of pixel regions provided on the surface opposing the second substrate of the first substrate, each of which pixel regions has at least one pixel electrode and a common electrode for cooperatively applying an electric field in a direction along the surface of the first substrate; and a conductive light shielding matrix provided on the surface opposing the first substrate of the second substrate which light shielding matrix has openings each corresponding to a display region of each of the pixel regions and shades non-display regions other than the pixel regions; in which the light shielding matrix and the common electrode are set to substantially the same voltage.
摘要翻译：一种液晶显示装置，包括：第一基板和第二基板; 设置在第一和第二基板之间的液晶层; 设置在与第一基板的第二基板相对的表面上的多个像素区域，每个像素区域具有至少一个像素电极和用于在沿着第一基板的表面的方向上协同施加电场的公共电极; 以及设置在与所述第二基板的所述第一基板相对的表面上的导电遮光矩阵，所述遮光矩阵具有各自对应于每个所述像素区域的显示区域的开口并遮蔽除所述像素区域之外的非显示区域; 其中遮光矩阵和公共电极被设置为基本上相同的电压。

4. 发明授权

US6166794A Liquid crystal device including gate insulating film and layer insulating film having different dielectric constants 失效
标题翻译：包括具有不同介电常数的栅绝缘膜和层绝缘膜的液晶器件
公开(公告)号：US6166794A
公开(公告)日：2000-12-26
申请号：US897243
申请日：1997-07-18
申请人： Chae Gee Sung
发明人： Chae Gee Sung
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/786
CPC分类号： G02F1/1368
摘要： A liquid crystal display device comprises a first substrate, a second substrate disposed opposite to the first substrate, a liquid crystal sealed in a space between the first and the second substrate, gate lines formed in longitudinal rows on the first. substrate, layer insulating film formed over the gate lines, source lines formed in transverse lines on the layer insulating film so as to form a matrix with the gate lines, thin-film transistors each electrically connected to the gate line and the source line, pixel electrodes formed in regions demarcated by the intersecting gate lines and the source lines and connected to the thin-film transistors, respectively, and gate insulating film interposed between the gate electrodes of the thin-film transistors and an active semiconductor layer. The dielectric constant of the gate insulating film being greater than that of the layer insulating film, and the liquid crystal display has a small parasitic capacitance which increases delay in signal transmission.
摘要翻译：液晶显示装置包括第一基板，与第一基板相对设置的第二基板，密封在第一和第二基板之间的空间中的液晶，在第一基板上形成为纵向行的栅极线。在栅极线上形成的基板，层间绝缘膜，形成在层间绝缘膜上的横向线上的源极线，以形成具有栅极线的矩阵，每个电连接到栅极线和源极线的薄膜晶体管，像素在由相交的栅极线和源极线划分并分别连接到薄膜晶体管的区域中形成的电极和介于薄膜晶体管的栅电极和有源半导体层之间的栅极绝缘膜。栅极绝缘膜的介电常数大于层间绝缘膜的介电常数，液晶显示器具有较小的寄生电容，增加了信号传输的延迟。

5. 发明授权

US06852998B2 Thin-film transistor substrate and liquid crystal display 有权
标题翻译：薄膜晶体管基板和液晶显示器
公开(公告)号：US06852998B2
公开(公告)日：2005-02-08
申请号：US10385377
申请日：2003-03-07
申请人： Chae Gee Sung , Jo Gyoo Chul , Makoto Sasaki , Kazuyuki Arai
发明人： Chae Gee Sung , Jo Gyoo Chul , Makoto Sasaki , Kazuyuki Arai
IPC分类号： G09F9/30 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/00 , H01L21/336 , H01L21/77 , H01L27/12 , H01L29/45 , H01L29/786 , H01L29/12
CPC分类号： H01L27/124 , G02F1/13458 , G02F1/136286 , G02F2001/136295 , H01L27/1214 , H01L29/458 , H01L29/66757
摘要： A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.
摘要翻译：源极线直接连接到由薄膜晶体管衬底中的氧化铟锌构成的源极端子。栅极线直接连接到由氧化铟锌构成的栅极端子。或者，用于切换多个像素电极的薄膜晶体管的漏极直接连接到由氧化铟锌构成的像素电极。这些配置不需要对于传统的薄膜晶体管衬底是必需的钝化膜，并且所得到的薄膜晶体管衬底可以通过减少数量的制造步骤来制造。

6. 发明授权

US06417900B1 Liquid crystal display unit with conductive light-shielding member having substantially the same potential as common electrode 失效
标题翻译：液晶显示单元，其具有与公共电极基本相同的电位的导电遮光构件
公开(公告)号：US06417900B1
公开(公告)日：2002-07-09
申请号：US09044568
申请日：1998-03-19
申请人： Hyunho Shin , Kuniaki Suzuki , Chae Gee Sung
发明人： Hyunho Shin , Kuniaki Suzuki , Chae Gee Sung
IPC分类号： G02F11333
CPC分类号： G02F1/133512 , G02F2001/136218
摘要： A liquid crystal display unit has wider viewing angles and a brighter display. In this display unit, an alignment film is not required to be processed for alignment of a liquid crystal, thereby simplifying the manufacturing process. A first substrate and a second substrate are disposed such that they face each other. A liquid crystal having a negative anisotropy of dielectric constant is provided between the substrates. A common electrode and an alignment film which has a pretilt angle of 90°±1° and which is not rubbed are sequentially disposed on the surface of the first substrate facing the second substrate. A plurality of pixel electrodes are provided on the surface of the second substrate facing the first substrate so as to cover a display area of the liquid crystal. A conductive light-shielding member is disposed on the second substrate and positioned around each of the pixel electrodes in a non-display area of the liquid crystal. The conductive light-shielding member is electrically insulated from the pixel electrode. An alignment film which has a pretilt angle of 90°±1° and which is not rubbed is formed on the pixel electrodes and on the light-shielding members. The conductive light-shielding member is set at substantially the same potential as the common electrode.
摘要翻译：液晶显示单元具有更宽的视角和更亮的显示。在该显示单元中，不需要对液晶的取向进行取向膜的取向膜，因此简化了制造工序。第一基板和第二基板被设置为使得它们彼此面对。在基板之间设置具有负的各向异性介电常数的液晶。在第一基板的面向第二基板的表面上依次设置具有90°±1°的预倾角并且不被摩擦的公共电极和取向膜。在与第一基板相对的第二基板的表面上设置多个像素电极以覆盖液晶的显示区域。导电遮光构件设置在第二基板上并且位于液晶的非显示区域中的每个像素电极周围。导电遮光部件与像素电极电绝缘。在像素电极和遮光构件上形成具有90°±1°的预倾角且不被摩擦的取向膜。导电遮光部件被设定为与公共电极大致相同的电位。

7. 发明授权

US06355943B1 Thin film transistor, method of producing the same, liquid crystal display, and thin film forming apparatus 有权
标题翻译：薄膜晶体管，其制造方法，液晶显示器和薄膜形成装置
公开(公告)号：US06355943B1
公开(公告)日：2002-03-12
申请号：US09413653
申请日：1999-10-06
申请人： Chae Gee Sung
发明人： Chae Gee Sung
IPC分类号： H01L2904
CPC分类号： H01L29/4908
摘要： The invention intends to provide a TFT having a gate insulating film which has a high dielectric withstand voltage and can ensure a desired carrier mobility in an adjacent semiconductor active film. A gate electrode and a semiconductor active film are formed on a transparent substrate with a gate insulating film, which is formed of two layered insulating films, held between them. The gate insulating film is made up of a first gate insulating film which improves a withstand voltage between the gate electrode and the semiconductor active film, and a second gate insulating film which improves an interface characteristic between the gate insulating film and the semiconductor active film . The first and second gate insulating films are each formed of a SiNx film. The optical band gap of the first gate insulating film has a value in the range of 3.0 to 4.5 eV, and the optical band gap of the second gate insulating film has a value in the range of 5.0 to 5.3 eV.
摘要翻译：本发明意图提供一种具有栅极绝缘膜的TFT，该栅极绝缘膜具有高的介电耐受电压并且可以确保相邻的半导体有源膜中所需的载流子迁移率。在具有栅极绝缘膜的透明基板上形成栅电极和半导体有源膜，该绝缘膜由保持在它们之间的两层绝缘膜形成。栅极绝缘膜由提高栅电极和半导体有源膜之间的耐受电压的第一栅极绝缘膜和改善栅极绝缘膜和半导体活性膜之间的界面特性的第二栅极绝缘膜构成。第一和第二栅极绝缘膜各自由SiNx膜形成。第一栅极绝缘膜的光学带隙的值在3.0〜4.5eV的范围内，第二栅极绝缘膜的光学带隙的值在5.0〜5.3eV的范围内。

8. 发明授权

US5824572A Method of manufacturing thin film transistor 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US5824572A
公开(公告)日：1998-10-20
申请号：US825447
申请日：1997-03-28
申请人： Hirofumi Fukui , Chae Gee Sung
发明人： Hirofumi Fukui , Chae Gee Sung
IPC分类号： H01L21/28 , H01L21/306 , H01L21/336 , H01L29/45 , H01L29/786 , H01L21/00
CPC分类号： H01L29/66765 , H01L29/458 , H01L29/78669
摘要： A method of manufacturing a thin film transistor comprising the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulation film covering the gate electrode; forming an active semiconductor layer and an ohmic contact layer on the gate insulation film; forming a source/drain electrode made of Cr; and removing a portion of the ohmic contact layer except for the portion in contact with the source/drain electrode by an etching solution, wherein the step of removing the ohmic contact layer is conducted in a state of at least partially or entirely peeling a resist on the source/drain electrode made of Cr.
摘要翻译：一种制造薄膜晶体管的方法，包括以下步骤：在衬底的表面上形成栅电极; 形成覆盖所述栅电极的栅极绝缘膜; 在栅极绝缘膜上形成有源半导体层和欧姆接触层; 形成由Cr制成的源极/漏电极; 以及通过蚀刻溶液去除除与源/漏电极接触的部分之外的欧姆接触层的一部分，其中去除欧姆接触层的步骤在至少部分或完全剥离抗蚀剂的状态下进行源极/漏极由Cr制成。

9. 发明授权

US06878967B2 Thin film transistor, method of producing the same, liquid crystal display, and thin film forming apparatus 有权
标题翻译：薄膜晶体管，其制造方法，液晶显示器和薄膜形成装置
公开(公告)号：US06878967B2
公开(公告)日：2005-04-12
申请号：US10631331
申请日：2003-07-31
申请人： Chae Gee Sung
发明人： Chae Gee Sung
IPC分类号： H01L21/316 , G02F1/136 , G02F1/1368 , H01L21/318 , H01L21/336 , H01L29/49 , H01L29/786 , H01L29/15
CPC分类号： H01L29/4908
摘要： The invention intends to provide a TFT having a gate insulating film which has a high dielectric withstand voltage and can ensure a desired carrier mobility in an adjacent semiconductor active film. A gate electrode and a semiconductor active film are formed on a transparent substrate with a gate insulating film, which is formed of two layered insulating films, held between them. The gate insulating film is made up of a first gate insulating film which improves a withstand voltage between the gate electrode and the semiconductor active film, and a second gate insulating film which improves an interface characteristic between the gate insulating film and the semiconductor active film. The first and second gate insulating films are each formed of a SiNx film. The optical band gap of the first gate insulating film has a value in the range of 3.0 to 4.5 eV, and the optical band gap of the second gate insulating film has a value in the range of 5.0 to 5.3 eV.
摘要翻译：本发明意图提供一种具有栅极绝缘膜的TFT，该栅极绝缘膜具有高的介电耐受电压并且可以确保相邻的半导体有源膜中所需的载流子迁移率。在具有栅极绝缘膜的透明基板上形成栅电极和半导体有源膜，该绝缘膜由保持在它们之间的两层绝缘膜形成。栅极绝缘膜由提高栅电极和半导体有源膜之间的耐受电压的第一栅极绝缘膜和改善栅极绝缘膜和半导体活性膜之间的界面特性的第二栅极绝缘膜构成。第一和第二栅极绝缘膜各自由SiNx膜形成。第一栅极绝缘膜的光学带隙的值在3.0〜4.5eV的范围内，第二栅极绝缘膜的光学带隙的值在5.0〜5.3eV的范围内。

10. 发明授权

US06777354B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US06777354B2
公开(公告)日：2004-08-17
申请号：US10644712
申请日：2003-08-20
申请人： Chae Gee Sung
发明人： Chae Gee Sung
IPC分类号： H01L2131
CPC分类号： H01L29/78696 , H01L29/4908 , H01L29/66757
摘要： The present invention provides a semiconductor device capable of preventing deterioration in carrier mobility of a semiconductor layer, which is a quality of the interface between the semiconductor layer and an insulating layer, and a method of manufacturing the semiconductor device. In the semiconductor device, an interface layer is provided between a semiconductor layer made of active polycrystalline silicon and an insulating layer made of silicon oxide. The nitrogen element in silicon nitride diffuses into the semiconductor layer made of active polycrystalline silicon to compensate for lattice strain of the active polycrystalline silicon film, to satisfy the desired quality of the interface between the semiconductor layer and the insulating layer.

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