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1. 发明申请

US20080044575A1 PATTERNING OF SOLID STATE FEATURES BY DIRECT WRITE NANOLITHOGRAPHIC PRINTING 有权
标题翻译：通过直写写纳印刷印刷固体状态特征
公开(公告)号：US20080044575A1
公开(公告)日：2008-02-21
申请号：US11847263
申请日：2007-08-29
申请人： Chad Mirkin , Vinayak Dravid , Ming Su , Xiaogang Liu
发明人： Chad Mirkin , Vinayak Dravid , Ming Su , Xiaogang Liu
IPC分类号： B05D5/00
CPC分类号： B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , Y10S977/855 , Y10S977/857 , Y10T428/24802 , Y10T428/24926 , Y10T428/265
摘要： The present invention includes a method of fabricating organic/inorganic composite nanostructures on a substrate comprising depositing a solution having a block copolymer and an inorganic precursor on the substrate using dip pen nanolithography. The nanostructures comprises arrays of lines and/or dots having widths/diameters less than 1 micron. The present invention also includes a device comprising an organic/inorganic composite nanoscale region chemically bonded to a substrate, wherein the nanoscale region, wherein the nanoscale region has a nanometer scale dimension other than height.
摘要翻译：本发明包括在衬底上制造有机/无机复合纳米结构的方法，其包括使用浸渍笔纳米光刻法在衬底上沉积具有嵌段共聚物和无机前体的溶液。纳米结构包括具有小于1微米的宽度/直径的线和/或点的阵列。本发明还包括一种包括化学键合到基底上的有机/无机复合纳米尺度区域的器件，其中所述纳米尺度区域，其中所述纳米尺度区域具有除了高度之外的纳米尺度尺寸。

2. 发明申请

US20050191434A1 Nanolithography methods and products therefor and produced thereby 有权
标题翻译：纳米光刻方法和产品，由此生产
公开(公告)号：US20050191434A1
公开(公告)日：2005-09-01
申请号：US11100483
申请日：2005-04-07
申请人： Chad Mirkin , Seunghun Hong , Vinayak Dravid
发明人： Chad Mirkin , Seunghun Hong , Vinayak Dravid
IPC分类号： B05D1/00 , B05D1/18 , B05D1/26 , B82B3/00 , G01Q60/00 , G01Q70/16 , G01Q80/00 , G03F7/00 , G03F7/16 , B05D5/00
CPC分类号： G03F7/0002 , B05D1/007 , B05D1/185 , B05D1/26 , B82B3/00 , G01Q80/00 , G03F7/165 , Y10S977/85 , Y10S977/857 , Y10S977/86 , Y10S977/862 , Y10S977/863 , Y10S977/878 , Y10S977/882 , Y10S977/884 , Y10S977/885 , Y10S977/886
摘要： In one aspect, a method of nanolithography is provided using a driving force to control the movement of a deposition compound from a scanning probe microscope tip to a substrate. Another aspect of the invention provides a tip for use in nanolithography having an internal cavity and an aperture restricting movement of a deposition compound from the tip to the substrate. The rate and extent of movement of the deposition compound through the aperture is controlled by a driving force.
摘要翻译：一方面，使用驱动力来提供纳米光刻的方法，以控制沉积化合物从扫描探针显微镜尖端到基底的移动。本发明的另一方面提供了一种用于纳米光刻的尖端，其具有内腔和限制沉积化合物从尖端到基底的运动的孔。沉积化合物通过孔的运动速度和程度由驱动力控制。

3. 发明申请

US20080070010A1 Method of making nanopatterns and nanostructures and nanopatterned functional oxide materials 有权
标题翻译：制备纳米图案和纳米结构和纳米图案化功能氧化物材料的方法
公开(公告)号：US20080070010A1
公开(公告)日：2008-03-20
申请号：US11805546
申请日：2007-05-23
申请人： Vinayak Dravid , Suresh Donthu , Zixiao Pan
发明人： Vinayak Dravid , Suresh Donthu , Zixiao Pan
IPC分类号： G03C5/00 , B44C1/17
CPC分类号： G03F7/405 , H01L21/0272 , H01L21/0277 , H01L21/31144
摘要： Method for nanopatterning of inorganic materials, such as ceramic (e.g. metal oxide) materials, and organic materials, such as polymer materials, on a variety of substrates to form nanopatterns and/or nanostructures with control of dimensions and location, all without the need for etching the materials and without the need for re-alignment between multiple patterning steps in forming nanostructures, such as heterostructures comprising multiple materials. The method involves patterning a resist-coated substrate using electron beam lithography, removing a portion of the resist to provide a patterned resist-coated substrate, and spin coating the patterned resist-coated substrate with a liquid precursor, such as a sol precursor, of the inorganic or organic material. The remaining resist is removed and the spin coated substrate is heated at an elevated temperature to crystallize the deposited precursor material.
摘要翻译：无机材料如陶瓷（例如金属氧化物）材料和有机材料（例如聚合物材料）在各种基底上的纳米图案化方法，以形成具有尺寸和位置控制的纳米图案和/或纳米结构，所有这些都不需要蚀刻材料并且不需要在形成纳米结构的多个图案化步骤之间进行重新对准，例如包括多种材料的异质结构。该方法包括使用电子束平版印刷图案化抗蚀剂涂覆的基底，去除抗蚀剂的一部分以提供图案化的抗蚀剂涂覆的基底，并用液体前体如溶胶前体旋涂涂敷图案化的抗蚀剂涂覆的基底，无机或有机材料。除去剩余的抗蚀剂，并将旋转涂覆的基材在升高的温度下加热以使沉积的前体材料结晶。

4. 发明申请

US20050056782A1 Near field acoustic holography with scanning probe microscope (SPM) 审中-公开
标题翻译：用扫描探针显微镜（SPM）近场声全息术
公开(公告)号：US20050056782A1
公开(公告)日：2005-03-17
申请号：US10913086
申请日：2004-08-06
申请人： Gajendra Shekhawat , Vinayak Dravid
发明人： Gajendra Shekhawat , Vinayak Dravid
IPC分类号： G01N29/06 , G01N29/265 , G01Q60/24 , G03H3/00 , G01N23/00
CPC分类号： G01N29/0663 , G01N29/0681 , G01N29/069 , G01N29/265 , G01N2291/0232 , G01N2291/02827 , G01N2291/0427 , G01Q60/32 , G03H3/00
摘要： A high spatial resolution phase-sensitive technique employs a near field ultrasonic holography methodology for imaging elastic as well as viscoelastic variations across a sample surface. Near field ultrasonic holography (NFUH) uses a near-field approach to measure time-resolved variations in ultrasonic oscillations at a sample surface. As such, it overcomes the spatial resolution limitations of conventional phase-resolved acoustic microscopy (i.e. holography) by eliminating the need for far-field acoustic lenses.
摘要翻译：高空间分辨率相敏技术采用近场超声全息术方法来对样本表面的弹性以及粘弹性变化进行成像。近场超声全息术（NFUH）使用近场方法来测量样品表面超声波振荡的时间分辨变化。因此，它通过消除对远场声透镜的需要来克服常规相分离声学显微镜（即全息术）的空间分辨率限制。

5. 发明申请

US20060037401A1 Scanning near field ultrasound holography 有权
标题翻译：扫描近场超声全息术
公开(公告)号：US20060037401A1
公开(公告)日：2006-02-23
申请号：US11244747
申请日：2005-10-06
申请人： Gajendra Shekhawat , Vinayak Dravid
发明人： Gajendra Shekhawat , Vinayak Dravid
IPC分类号： G01N29/04 , G01N13/16
CPC分类号： G01N29/265 , G01N29/0663 , G01N29/0681 , G01N29/069 , G01N2291/0232 , G01N2291/02827 , G01N2291/0427 , G01Q60/32 , G03H3/00
摘要： A high spatial resolution phase-sensitive technique employs a scanning near field ultrasound holography (SNFUH) methodology for imaging elastic as well as viscoelastic variations across a sample surface. SNFUH uses a near-field approach to measure time-resolved variations in ultrasonic oscillations at a sample surface. As such, it overcomes the spatial resolution limitations of conventional phase-resolved acoustic microscopy (i.e. holography) by eliminating the need for far-field acoustic lenses.
摘要翻译：高空间分辨率相敏技术采用扫描近场超声全息（SNFUH）方法，用于在样品表面上成像弹性以及粘弹性变化。 SNFUH使用近场方法测量样品表面超声波振荡的时间分辨变化。因此，它通过消除对远场声透镜的需要来克服常规相分离声学显微镜（即全息术）的空间分辨率限制。

6. 发明申请

US20070145966A1 CASCADED MOSFET EMBEDDED MULTI-INPUT MICROCANTILEVER 失效
标题翻译：嵌入式MOSFET嵌入式多输入微控制器
公开(公告)号：US20070145966A1
公开(公告)日：2007-06-28
申请号：US11566557
申请日：2006-12-04
申请人： Gajendra Shekhawat , Vinayak Dravid
发明人： Gajendra Shekhawat , Vinayak Dravid
IPC分类号： G01N27/00
CPC分类号： G01N29/036 , G01N27/4145 , G01N2291/0256
摘要： A sensor for detecting mechanical perturbations represented by a change in an electrical signal includes a structure such as a cantilever, membrane, etc. and a field effect transistor such as a MOSFET embedded in the structure. The drain current of the embedded transistor changes with mechanical perturbations in the structure caused, for example, by a biochemical interaction being sensed. A scanning probe microscope utilizes the embedded MOSFET with a BiMOS actuator.
摘要翻译：用于检测由电信号变化表示的机械扰动的传感器包括诸如悬臂，膜等的结构以及嵌入结构中的诸如MOSFET的场效应晶体管。嵌入式晶体管的漏极电流随结构中的机械扰动而变化，例如通过感测到的生物化学相互作用引起。扫描探针显微镜利用带有BiMOS致动器的嵌入式MOSFET。

7. 发明申请

US20050151530A1 Method and system for electronic detection of mechanical perturbations using BiMOS readouts 有权
标题翻译：使用BiMOS读数电子检测机械扰动的方法和系统
公开(公告)号：US20050151530A1
公开(公告)日：2005-07-14
申请号：US10996274
申请日：2004-11-23
申请人： Gajendra Shekhawat , Vinayak Dravid
发明人： Gajendra Shekhawat , Vinayak Dravid
IPC分类号： G01N27/00 , G01N27/414 , H01L20060101
CPC分类号： G01N29/036 , G01N27/4145 , G01N2291/0256
摘要： A sensor for detecting mechanical perturbations represented by a change in an electrical signal includes a structure such as a cantilever, membrane, etc. and a field effect transistor such as a MOSFET embedded in the structure. The drain current of the embedded transistor changes with mechanical perturbations in the structure caused, for example, by a bio-chemical interaction being sensed. A scanning probe microscope utilizes the embedded MOSFET with a BiMOS actuator.
摘要翻译：用于检测由电信号变化表示的机械扰动的传感器包括诸如悬臂，膜等的结构以及嵌入结构中的诸如MOSFET的场效应晶体管。嵌入式晶体管的漏极电流随结构中的机械扰动而变化，例如通过感测到的生物化学相互作用引起。扫描探针显微镜利用带有BiMOS致动器的嵌入式MOSFET。

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