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1. 发明申请

US20180208734A1 MAGNETIC HYDROPHOBIC POROUS GRAPHENE SPONGE FOR ENVIRONMENTAL AND BIOLOGICAL/MEDICAL APPLICATIONS 审中-公开
公开(公告)号：US20180208734A1
公开(公告)日：2018-07-26
申请号：US15745974
申请日：2016-07-23
申请人： Cengiz S. Ozkan , Mihrimah Ozkan , Hamed Hosseini , Fabian Villalobos , Andrew Patalano
发明人： Cengiz S. Ozkan , Mihrimah Ozkan , Hamed Hosseini , Fabian Villalobos , Andrew Patalano
IPC分类号： C08J9/28 , B01J20/28 , B01J20/30 , C04B38/00 , C08J9/00 , C08L1/02 , C09K3/32
CPC分类号： C08J9/28 , B01J20/02 , B01J20/20 , B01J20/28007 , B01J20/28009 , B01J20/28045 , B01J20/3078 , B01J2220/4806 , B01J2220/4825 , C01B32/00 , C01B32/184 , C04B38/0022 , C08J9/0061 , C08J9/0066 , C08J2201/026 , C08J2201/05 , C08J2201/0504 , C08J2205/024 , C08J2303/00 , C08J2401/02 , C08J2429/04 , C08L1/00 , C08L1/02 , C09K3/32
摘要： A method of making a porous material is provided. The method includes: preparing a mixture including a sugar, a polymer, and at least one soluble metal source, in water; heating the mixture to obtain a gelled material; thermally curing the gelled material to obtain a cured material; and annealing at least a part of the cured material to obtain a porous material that includes metal nanoparticles, where the metal nanoparticles include at least one metal from the at least one soluble metal source. The porous material can include: sheets of multilayer graphene layers; metal nanoparticles dispersed among the sheets and encapsulated by layers of graphene; and macropores, mesopores or micropores, or any combination thereof, throughout the porous material and on its surface. Methods of using the porous material to separate contaminants from water are also provided.

2. 发明申请

US20160093689A1 THIN FILM TRANSITION METAL DICHALCOGENIDES AND METHODS 有权
标题翻译：薄膜过渡金属二氯化碳和方法
公开(公告)号：US20160093689A1
公开(公告)日：2016-03-31
申请号：US14871277
申请日：2015-09-30
申请人： Aaron S. George , Robert Ionescu , Hamed Hosseini Bay , Mihrimah Ozkan , Cengiz S. Ozkan
发明人： Aaron S. George , Robert Ionescu , Hamed Hosseini Bay , Mihrimah Ozkan , Cengiz S. Ozkan
IPC分类号： H01L29/04 , H01L21/02 , H01L29/24
CPC分类号： H01L29/78681 , B82Y30/00 , C23C16/305 , C30B29/46 , H01L21/02381 , H01L21/02485 , H01L21/02488 , H01L21/02499 , H01L21/02516 , H01L21/02568 , H01L21/02628 , H01L21/02664 , H01L21/02694 , H01L29/66742 , H01L29/66969
摘要： A coated substrate including a thin film of a transition metal dichalcogenide and associated methods are shown. In one example, the substrate is a semiconductor wafer. In one example, the thin film is atomically thin, and the substrate is a number of centimeters in diameter. In one example a crystalline structure of the thin film is substantially 2H hexagonal.
摘要翻译：示出了包括过渡金属二硫属元素化物的薄膜的涂布基材和相关方法。在一个示例中，衬底是半导体晶片。在一个实例中，薄膜原子上很薄，并且基底的直径为数厘米。在一个实例中，薄膜的晶体结构基本上为2H的六角形。

3. 发明授权

US06531369B1 Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe) 有权
标题翻译：使用选择性沉积的硅锗（SiGe）的异质结双极晶体管（HBT）
公开(公告)号：US06531369B1
公开(公告)日：2003-03-11
申请号：US10075700
申请日：2002-02-14
申请人： Cengiz S. Ozkan , Abderrahmane Salmi
发明人： Cengiz S. Ozkan , Abderrahmane Salmi
IPC分类号： H01L21331
CPC分类号： H01L29/66242 , H01L29/7378
摘要： A Heterojunction Bipolar Transistor (HBT) is provided where the SiGe base region is formed through selective deposition, after the formation of the base electrode layer and the emitter window. A sacrificial oxide layer is deposited between the collector and base electrode. The contact to the SiGe base is made at an extrinsic area, underneath the base electrode, after removal of the sacrificial oxide. The SiGe is covered with a temporary oxide layer during further processes, and this protective layer is removed immediately before the deposition of the emitter material. The selective deposition of the SiGe at a relatively late stage of the fabrication process helps insure that the film remains free of the stresses which can degrade electron mobility. A process of fabricating the above-described HBT device is also provided.
摘要翻译：提供了异相结双极晶体管（HBT），其中在形成基极电极层和发射极窗之后，通过选择性沉积形成SiGe基区。牺牲氧化层沉积在集电极和基极之间。在除去牺牲氧化物之后，在基极下方的外部区域进行与SiGe基体的接触。 SiGe在进一步的工艺期间被覆盖有临时氧化物层，并且在保护层在沉积发射体材料之前立即被去除。在制造工艺的相对较晚的阶段，SiGe的选择性沉积有助于确保膜保持没有可能降低电子迁移率的应力。还提供了制造上述HBT器件的工艺。

4. 发明授权

US06437376B1 Heterojunction bipolar transistor (HBT) with three-dimensional base contact 有权
标题翻译：具有三维基极接触的异质结双极晶体管（HBT）
公开(公告)号：US06437376B1
公开(公告)日：2002-08-20
申请号：US09516993
申请日：2000-03-01
申请人： Cengiz S. Ozkan
发明人： Cengiz S. Ozkan
IPC分类号： H01L31072
CPC分类号： H01L29/66242 , H01L29/1004 , H01L29/42304 , H01L29/7378
摘要： A Heterojunction Bipolar Transistor (HBT) is provided which is formed by selectively depositing silicon germanium (SiGe) in a base region subsequent to the deposition of the base electrodes. Vertical bridging structures of SiGe are formed in the intrinsic area of the base to connect to the base electrode. During the formation of the dielectric sidewall defining the emitter space the SiGe base region is protected with a thin coat of oxide formed in a high-pressure low-temperature oxidation (HIPOX) process. Prior to the emitter silicon deposition the HIPOX is removed. A method for forming an HBT with a vertical bridging structure, as described above, is also provided.
摘要翻译：提供了异相结双极晶体管（HBT），其通过在基极沉积之后的基极区域中选择性地沉积硅锗（SiGe）而形成。 SiGe的垂直桥接结构形成在基极的本征区域中以连接到基极。在形成限定发射极空间的电介质侧壁的形成期间，SiGe基极区域用在高压低温氧化（HIPOX）工艺中形成的薄氧化物保护。在发射极硅沉积之前，将HIPOX除去。还提供了如上所述形成具有垂直桥接结构的HBT的方法。

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