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1. 发明授权

US5729261A Thermal ink jet printhead with improved ink resistance 失效
标题翻译：具有改善油墨阻力的热喷墨打印头
公开(公告)号：US5729261A
公开(公告)日：1998-03-17
申请号：US623081
申请日：1996-03-28
申请人： Cathie J. Burke , Daniel E. Kuhman , Daniel O. Roll , Alan D. Raisanen
发明人： Cathie J. Burke , Daniel E. Kuhman , Daniel O. Roll , Alan D. Raisanen
IPC分类号： B41J2/05 , B41J2/14 , B41J2/16
CPC分类号： B41J2/1606 , B41J2/14129 , B41J2202/03
摘要： An ink jet printhead has improved resistance to the corrosive effects of ink by coating the surface of a photo-imageable polymer with an ink resistant film. In one described embodiment, a thermal ink jet element is formed by bonding together a channel plate and a heater plate. Resistors and electrical connections are formed in the heater plate. A polyimide layer is formed so as to overlie the heater plate to protect the electrical elements while providing pit structure for the heater and for ink flow bypass. A tantalum film is formed on the surface of the polyimide layer to protect the layer from the effects of corrosive ink. In another embodiment, the ink resistant film is amorphous carbon or silicon nitride.
摘要翻译：喷墨打印头通过用耐墨膜涂覆可光成像聚合物的表面而改善了对油墨腐蚀作用的抵抗力。在一个描述的实施例中，通过将通道板和加热器板接合在一起形成热喷墨元件。电阻器和电气连接形成在加热器板中。形成聚酰亚胺层以覆盖加热板以保护电气元件，同时为加热器和墨水旁路提供凹坑结构。在聚酰亚胺层的表面上形成钽膜以保护层免受腐蚀性墨水的影响。在另一个实施方案中，耐油膜是无定形碳或氮化硅。

2. 发明授权

US6146914A Thermal ink jet printhead with increased heater resistor control 有权
标题翻译：热敏喷墨打印头具有增加的加热电阻控制
公开(公告)号：US6146914A
公开(公告)日：2000-11-14
申请号：US207071
申请日：1998-12-07
申请人： Cathie J. Burke , Alan D. Raisanen , Sean D. O'Brien
发明人： Cathie J. Burke , Alan D. Raisanen , Sean D. O'Brien
IPC分类号： B41J2/14 , B41J2/16 , H01L21/00
CPC分类号： B41J2/1632 , B41J2/14129 , B41J2/1601 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1642
摘要： An improved method is disclosed for forming heater elements for an ink jet printhead. The resistance is more closely controlled by doping a central heater region which is formed relatively thinner than the heavily doped heater regions which are used as the gate and contact areas. The thinner central region can doped relatively heavy in order to more accurately adjust the heater resistance.In another embodiment, the thin layer is amorphous silicon rather than the polysilicon to increase the latitude of the energy input.
摘要翻译：公开了用于形成用于喷墨打印头的加热器元件的改进方法。通过掺杂形成为比用作栅极和接触区域的重掺杂加热器区域相对更薄的中心加热器区域来更牢固地控制电阻。更薄的中心区域可以掺杂较重，以便更准确地调节加热器电阻。在另一个实施例中，薄层是非晶硅而不是多晶硅，以增加能量输入的纬度。

3. 发明授权

US06905196B2 Polysilicon feed-through fluid drop ejector 失效
标题翻译：多晶硅直通液滴喷射器
公开(公告)号：US06905196B2
公开(公告)日：2005-06-14
申请号：US10431540
申请日：2003-05-08
申请人： Scott N. Seabridge , Alan D. Raisanen , Scott C. Warner , Thomas A. Tellier , Cathie J. Burke , William G. Hawkins
发明人： Scott N. Seabridge , Alan D. Raisanen , Scott C. Warner , Thomas A. Tellier , Cathie J. Burke , William G. Hawkins
IPC分类号： B41J2/14 , B41J2/05
CPC分类号： B41J2/14129 , B41J2/14072 , B41J2202/03
摘要： A fluid ejector includes a fluid channel having a resistive heater and terminating in a nozzle, a common bus formed transverse to the fluid channel and between the resistive heater and the nozzle, a connection line laterally adjacent to the fluid channel, and a connection structure for electrically connecting the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers for electrical connection and a second set of one or more layers for covering the common bus and connection line. The first set of one or more layers includes a doped polysilicon layer on or overlaid by an optional tantalum-silicide layer. The second set of one or more layers includes a nitride layer on or overlaid by a tantalum layer.
摘要翻译：流体喷射器包括具有电阻加热器并终止于喷嘴的流体通道，与流体通道横向于电阻加热器和喷嘴之间的公共总线，与流体通道横向相邻的连接管线，以及用于将公共总线与电阻加热器和连接线电连接，连接结构包括用于电连接的一个或多个层的第一组和用于覆盖公共总线和连接线的一个或多个层的第二组。第一组一层或多层包括在可选的硅化硅层上或由可选的硅化硅层覆盖的掺杂多晶硅层。第二组一层或多层包括在钽层上或覆盖钽层的氮化物层。

4. 发明授权

US06227657B1 Low topography thermal inkjet drop ejector structure 有权
标题翻译：低地形热喷墨滴喷射器结构
公开(公告)号：US06227657B1
公开(公告)日：2001-05-08
申请号：US09597282
申请日：2000-06-19
申请人： Alan D. Raisanen , Cathie J. Burke , Eduardo Mariano Freire , Yonglin Xie , Dale R. Ims , Michael P. O'Horo , Scott C. Warner , Thomas A. Tellier , Scott N. Seabridge , William G. Hawkins
发明人： Alan D. Raisanen , Cathie J. Burke , Eduardo Mariano Freire , Yonglin Xie , Dale R. Ims , Michael P. O'Horo , Scott C. Warner , Thomas A. Tellier , Scott N. Seabridge , William G. Hawkins
IPC分类号： B41J205
CPC分类号： B41J2/14072 , B41J2/14129
摘要： The systems and methods of this invention allows for an electrical contact structure of the drop ejecting transducer in an inkjet printhead to be designed in such a way that the relatively thick electrical contact lines are not in the ink drop ejection path between the drop ejector transducer and the corresponding nozzle. Such a design thereby minimizes any visible defects due to misdirected satellite drops.
摘要翻译：本发明的系统和方法允许在喷墨打印头中的液滴喷射换能器的电接触结构被设计成使得相对较厚的电接触线不在滴液喷射传感器和液滴喷射传感器之间的墨滴喷射路径中相应的喷嘴。因此，这样的设计使得由于误导卫星滴而导致的任何可见的缺陷最小化。

5. 发明授权

US6109733A Printhead for thermal ink jet devices 失效
标题翻译：用于热喷墨设备的打印头
公开(公告)号：US6109733A
公开(公告)日：2000-08-29
申请号：US976461
申请日：1997-11-21
申请人： Alan D. Raisanen , Cathie J. Burke
发明人： Alan D. Raisanen , Cathie J. Burke
IPC分类号： B41J2/05 , B41J2/14 , B41J2/16
CPC分类号： B41J2/1626 , B41J2/14129 , B41J2/1601 , B41J2/1646
摘要： The efficiency of a thermal ink jet printhead is improved by providing a thermally grown field oxide layer and a deposited oxide layer, the two combined layers providing thermal insulation between a resistor layer and a silicon substrate. In a preferred embodiment, zirconium diboride is sputtered in the presence of oxygen to form a thin field oxide layer on a field oxide layer grown on the surface of the silicon substrate. At a predetermined time, during the sputtering process, oxygen is removed and the sputtering continues to form a conductive ZrB.sub.2 layer. The combined thickness of the two oxide layers provides the required thermal isolation between silicon substrate and heater resistor while the thermally grown field oxide layer enables the closer packing of resistor transistor drive circuits.
摘要翻译：通过提供热生长的场氧化物层和沉积的氧化物层来改善热喷墨打印头的效率，两个组合层在电阻层和硅衬底之间提供热绝缘。在优选的实施方案中，二硼化锆在氧的存在下溅射以在在硅衬底的表面上生长的场氧化物层上形成薄的场氧化物层。在预定的时间，在溅射过程中，去除氧并且溅射继续形成导电的ZrB 2层。两个氧化物层的组合厚度提供硅衬底和加热电阻器之间所需的热隔离，而热生长的场氧化物层能够使电阻晶体管驱动电路更紧密地堆积。

6. 发明授权

US6013160A Method of making a printhead having reduced surface roughness 失效
标题翻译：制造具有降低的表面粗糙度的打印头的方法
公开(公告)号：US6013160A
公开(公告)日：2000-01-11
申请号：US976460
申请日：1997-11-21
申请人： Alan D. Raisanen , Cathie J. Burke
发明人： Alan D. Raisanen , Cathie J. Burke
IPC分类号： B41J2/05 , B41J2/14 , B41J2/16 , C23C14/34
CPC分类号： B41J2/1626 , B41J2/14129 , B41J2/1603 , B41J2/1646 , B41J2202/03
摘要： The nucleation efficiency of a thermal ink jet printhead is improved by providing a heater resistor with a thin planar oxide film formed over a conductive heater resistive layer. In a preferred embodiment, zirconium diboride is sputtered onto a silicon substrate surface to form a first, electrically conductive base portion of the resistor. At a predetermined time, during the sputtering process, oxygen is introduced to form a thin film of ZrB.sub.2 O.sub.x. The surface of this film is very smooth having a surface roughness of
摘要翻译：通过在导电加热器电阻层上形成薄平面氧化膜的加热电阻器来改善热喷墨打印头的成核效率。在优选的实施方案中，二硼化锆被溅射到硅衬底表面上以形成电阻器的第一导电基底部分。在预定的时间，在溅射过程中，引入氧以形成ZrB2Ox的薄膜。该膜的表面非常光滑，表面粗糙度<5nm RMS。

7. 发明授权

US5980025A Thermal inkjet printhead with increased resistance control and method for making the printhead 失效
标题翻译：具有增加的电阻控制的热喷墨打印头和用于制造打印头的方法
公开(公告)号：US5980025A
公开(公告)日：1999-11-09
申请号：US976419
申请日：1997-11-21
申请人： Cathie J. Burke , Alan D. Raisanen
发明人： Cathie J. Burke , Alan D. Raisanen
IPC分类号： B41J2/05 , B41J2/14 , B41J2/16
CPC分类号： B41J2/1603 , B41J2/14129 , B41J2/1628 , B41J2/1629 , B41J2/1642 , B41J2202/03 , Y10T29/49401
摘要： A thermal ink jet printhead is improved by providing a heater resistor which is mechanically isolated from overlying nitride and tantalum layers by growing a thin buffer oxide layer on the surface of the resistor heater layer. The introduction of the buffer oxide layer permits a thinner nitride layer which, in turn, reduces electrical resistance changes which would otherwise be introduced into the resistor arrays by mechanical stress after the nitride layer is deposited.
摘要翻译：通过在电阻器加热器层的表面上生长薄的缓冲氧化物层，通过提供与上覆的氮化物和钽层机械隔离的加热电阻来改进热喷墨打印头。缓冲氧化物层的引入允许较薄的氮化物层，这又降低了在沉积氮化物层之后通过机械应力引入电阻器阵列的电阻变化。

8. 发明授权

US5943076A Printhead for thermal ink jet devices 失效
标题翻译：用于热喷墨设备的打印头
公开(公告)号：US5943076A
公开(公告)日：1999-08-24
申请号：US805098
申请日：1997-02-24
申请人： Cathie J. Burke , Michael P. O'Horo , Donald J. Drake , Alan D. Raisanen
发明人： Cathie J. Burke , Michael P. O'Horo , Donald J. Drake , Alan D. Raisanen
IPC分类号： B41J2/05 , B41J2/14 , B41J2/16
CPC分类号： B41J2/1626 , B41J2/14129 , B41J2/1601 , B41J2/1642 , B41J2202/03 , B41J2202/11
摘要： The nucleation efficiency of a thermal ink jet printhead is improved by forming a heater element with a planar surface. A heater resistor, polysilicon in a preferred embodiment, has an irregular surface which can trap gas or vapors in the cracks or crevices. When the heater resistor is pulsed, the nucleation temperature is reduced by these trapped vapors requiring an increase in electrical input to the resistors, thereby reducing efficiency. The invention recognizes that a heater resistor with a planar surface in contact with an ink layer results in a higher nucleation temperature and increased efficiency. In one embodiment, a phosphosilicate glass (PSG) is flowed directly onto the resistor surface forming a planarization layer. Subsequent deposition of tantalum substantially replicates the underlying topography creating a heater resistor with a smooth surface adjacent the ink.In a second embodiment, a diffusion layer which is conformal is formed on the resistor surface with the PSG layer formed on the oxide layer. The diffusion layer can be a pyrolytic CVD deposited silicon nitride or a thermally grown oxide layer. The PSG layer has a planarized surface to which the tantalum conforms.
摘要翻译：通过形成具有平坦表面的加热器元件来改善热喷墨打印头的成核效率。加热电阻器，多晶硅在优选实施例中具有不规则的表面，其可以在裂纹或缝隙中捕获气体或蒸汽。当加热电阻器被脉冲时，通过这些被捕获的蒸汽减少成核温度，这需要增加对电阻器的电输入，从而降低效率。本发明认识到，具有与油墨层接触的平坦表面的加热电阻器导致更高的成核温度和更高的效率。在一个实施例中，磷硅玻璃（PSG）直接流到形成平坦化层的电阻器表面上。随后的钽的沉积基本上复制了底层的形貌，形成了具有与墨水相邻的光滑表面的加热电阻器。在第二实施例中，在电阻器表面上形成具有共形的扩散层，其中形成在氧化物层上的PSG层。扩散层可以是热解CVD沉积的氮化硅或热生长的氧化物层。 PSG层具有钽符合的平坦化表面。

9. 发明授权

US07495347B2 Ion implantation with multiple concentration levels 失效
标题翻译：具有多重浓度水平的离子注入
公开(公告)号：US07495347B2
公开(公告)日：2009-02-24
申请号：US11171654
申请日：2005-06-30
申请人： Alan D. Raisanen , Shelby F. Nelson
发明人： Alan D. Raisanen , Shelby F. Nelson
IPC分类号： H01L21/027
CPC分类号： H01L21/2253 , H01L21/266 , Y10S438/918 , Y10S438/944 , Y10S438/948
摘要： A method that includes providing a semiconductor substrate having a mask on a surface thereof. The mask includes a first region having no masking elements and a second region having a plurality of masking elements. Each of the plurality of masking elements has a dimension that is equal to a first length, the first length less than twice a diffusion length of a dopant. The method further includes bombarding the semiconductor substrate and masking element with ions of the dopant. The ions form a first impurity concentration in the first region and a second impurity concentration in the second region.
摘要翻译：一种包括在其表面上提供具有掩模的半导体衬底的方法。掩模包括不具有掩模元件的第一区域和具有多个掩模元件的第二区域。多个掩模元件中的每一个具有等于第一长度的尺寸，第一长度小于掺杂剂的扩散长度的两倍。该方法还包括用掺杂剂的离子轰击半导体衬底和掩模元件。离子在第一区域中形成第一杂质浓度，在第二区域中形成第二杂质浓度。

10. 发明授权

US06927153B2 Ion implantation with multiple concentration levels 失效
公开(公告)号：US06927153B2
公开(公告)日：2005-08-09
申请号：US10374305
申请日：2003-02-25
申请人： Alan D. Raisanen , Shelby F. Nelson
发明人： Alan D. Raisanen , Shelby F. Nelson
IPC分类号： H01L21/225 , H01L21/266 , H01L21/22
CPC分类号： H01L21/2253 , H01L21/266 , Y10S438/918 , Y10S438/944 , Y10S438/948
摘要： A method that includes providing a semiconductor substrate having a mask on a surface thereof. The mask includes a first region having no masking elements and a second region having a plurality of masking elements. Each of the plurality of masking elements has a dimension that is equal to a first length, the first length less than twice a diffusion length of a dopant. The method further includes bombarding the semiconductor substrate and masking element with ions of the dopant. The ions form a first impurity concentration in the first region and a second impurity concentration in the second region.

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