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    • 4. 发明授权
    • Electrically adaptable neural network with post-processing circuitry
    • 具有后处理电路的电适应神经网络
    • US5331215A
    • 1994-07-19
    • US922535
    • 1992-07-30
    • Timothy P. AllenJaneen D. W. AndersonCarver A. MeadFederico FagginJohn C. PlattMichael F. Wall
    • Timothy P. AllenJaneen D. W. AndersonCarver A. MeadFederico FagginJohn C. PlattMichael F. Wall
    • G06N3/063H01L27/06H03F1/02H03F1/30H03F3/45H03K19/0948
    • H03F1/303G06N3/063H01L27/0629H03F1/0261H03F3/45479H03F3/45753H03F3/45977
    • A synaptic array according to the present invention comprises a plurality of electrically-adaptable elements. Electrons may be placed onto and removed from a floating node in each electrically adaptable element associated with at least one MOS insulated gate field effect transistor, usually the gate of the transistor, in an analog manner, by application of first and second electrical control signals generated in response to an adapt signal. The inputs to all synaptic elements in a row are connected to a common row input line. Adapt inputs to all synaptic elements in a column are connected together to a common column adapt line. The current supplied to all amplifiers in a column is commonly provided by a sense line. In order to adapt the synaptic elements in the M row by N column matrix of the present invention, the voltages to which a given column n of the matrix is to be adapted are placed onto the input voltage lines, and the synaptic elements in column n are then simultaneously adapted by assertion of an adapt signal on the adapt line for column n. The vectors of input voltages for adapting successive columns may be placed sequentially onto the row input voltage lines and used to adapt the columns of synaptic elements by assertion of the adapt signals on the appropriate column adapt lines until the entire array is electrically adapted. After each synaptic element has been adapted, the current flowing through it will be maximized when the voltage at the input of the synaptic element equals the voltage to which the synaptic element has been adapted. An electrically adaptable winner-take-all circuit has its inputs connected to the column-sense lines of the array.
    • 根据本发明的突触阵列包括多个电适应元件。 可以通过施加产生的第一和第二电控制信号将电子放置在与至少一个MOS绝缘栅场效应晶体管(通常是晶体管的栅极)相关联的每个电适应元件中的浮动节点上并从其移除, 响应于适配信号。 对一行中所有突触元素的输入连接到公共行输入行。 将输入到列中的所有突触元素的调整连接到公共列适应线。 提供给列中所有放大器的电流通常由感测线提供。 为了适应本发明的M行×N列矩阵中的突触元素,要将矩阵的给定列n适应的电压放置在输入电压线上,并且列n中的突触元素 然后通过在第n列的适应线上断言适配信号同时进行调整。 用于适配连续列的输入电压的矢量可以顺序地放置在行输入电压线上,并且用于通过在适当的列适配线上断言适配信号来适应突触元件的列,直到整个阵列电气适配。 在每个突触元件已经适应之后,当突触元件的输入端的电压等于突触元件适应的电压时,流过它的电流将被最大化。 电气适应性的胜者总线电路的输入连接到阵列的列感测线。
    • 5. 发明授权
    • Paintbrush stylus for capacitive touch sensor pad
    • 用于电容式触摸传感器垫的画笔触控笔
    • US5488204A
    • 1996-01-30
    • US324438
    • 1994-10-17
    • Carver A. MeadRalph WolfTimothy P. Allen
    • Carver A. MeadRalph WolfTimothy P. Allen
    • G06F3/023G06F3/033G06F3/041G06F3/044G06F3/048G08C21/00
    • G06F3/04855G06F3/041G06F3/044G06F3/0488G06F3/04883G06F3/04892G06K9/00335
    • A proximity sensor system includes a touch-sensor pad with a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e, its position in the X and Y dimensions. Noise reduction and background level setting techniques inherently available in the architecture are employed. A conductive paintbrush-type stylus is used to produce paint-like strokes on a display associated with the touch-sensor pad.
    • 接近传感器系统包括具有传感器矩阵阵列的触摸传感器焊盘,该传感器阵列在连接到传感器焊盘的水平和垂直导体上具有特征电容。 电容根据物体或传感器矩阵的接近度而变化。 由于物体的接近,矩阵的X和Y方向上的每个节点的电容的变化被转换成在X和Y方向上的一组电压。 这些电压由电路处理以产生表示物体轮廓的质心的电信号,即其在X和Y尺寸中的位置。 采用本构架中固有可用的降噪和背景设置技术。 导电画笔型触笔用于在与触摸传感器垫相关联的显示器上产生油漆状笔触。
    • 8. 发明授权
    • Integrated device for recognition of moving objects
    • 用于识别移动物体的集成装置
    • US5248873A
    • 1993-09-28
    • US939108
    • 1992-09-01
    • Timothy P. AllenFederico Faggin
    • Timothy P. AllenFederico Faggin
    • G06K9/78
    • G06K9/78
    • A moving object classifier is integrated onto a single integrated circuit chip and includes a retina comprising a two-dimensional array of photosensors upon which the image of the object of interest is focused. A position classifier receives inputs from the retina and determines where in the retina the image of an object is located. An object classifier receives inputs from the portion of interest of the retina and computes the degree of membership of the image to each class to be classified and determines which class has the largest membership function. A scan controller controlled by the position classifier limits the object classifier data to the portion of the retinal image which contains the object. An interface controller interfaces the other elements on the integrated circuit chip with a microcontroller, which comprises a standard CPU, memory and input/output lines interfacing to the interface controller.
    • 移动物体分类器被集成到单个集成电路芯片上,并且包括视网膜,其包括感兴趣对象的图像在其上聚焦的光电传感器的二维阵列。 位置分类器从视网膜接收输入,并确定视网膜中物体的图像位于何处。 对象分类器接收来自视网膜感兴趣部分的输入,并计算图像的隶属度到要分类的每个类,并确定哪个类具有最大的隶属函数。 由位置分类器控制的扫描控制器将对象分类器数据限制为包含对象的视网膜图像的部分。 接口控制器将集成电路芯片上的其他元件与微控制器接口,微控制器包括与接口控制器接口的标准CPU,存储器和输入/输出线。
    • 9. 发明授权
    • Writable analog reference voltage storage device
    • 可写模拟参考电压存储器件
    • US5629891A
    • 1997-05-13
    • US622763
    • 1996-03-25
    • John LeMoncheckTimothy P. AllenGunter SteinbachCarver A. Mead
    • John LeMoncheckTimothy P. AllenGunter SteinbachCarver A. Mead
    • G05F1/46G05F3/24G11C5/14G11C11/56G11C27/00B11C16/04
    • G05F3/247G05F1/468G05F3/24G11C11/56G11C11/5621G11C27/005G11C5/147G11C16/30G11C2211/5634G11C7/16
    • A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Circuitry is provided so that all floating gate storage devices can be programmed to their target voltages individually or in parallel. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A transistor structure with a lightly doped drain is provided for control of the tunneling structure. A capacitor is connected to each floating gate node to provide control of the injection structure. A dynamic analog storage element is provided to store the target voltage for the floating gate storage device. A comparator is provided to monitor the floating gate voltage and target voltage and control tunneling and injection. A digital storage device is provided to statically store the output of the comparator. During normal operation of the voltage reference circuit, the voltage comparator is configured as a follower amplifier to buffer the analog voltage output. During normal operation of the bias reference circuit, the current comparator is configured as a current mirror to buffer the analog current output.
    • 用于产生用于参考或偏置使用的N个模拟电压信号的电路使用N个模拟浮动栅极存储装置。 提供电路,使得所有浮动栅极存储装置可以单独地或并行地编程到它们的目标电压。 提供电子注入电路用于将电子注入到上面,并且提供隧道结构用于从每个浮动栅极存储装置的浮动栅极去除电子。 提供了具有轻掺杂漏极的晶体管结构,用于控制隧道结构。 电容器连接到每个浮动栅极节点以提供对注入结构的控制。 提供动态模拟存储元件以存储浮动栅极存储装置的目标电压。 提供比较器来监控浮栅电压和目标电压,并控制隧道和注入。 提供数字存储设备以静态存储比较器的输出。 在电压基准电路正常工作期间,电压比较器被配置为跟随放大器以缓冲模拟电压输出。 在偏置参考电路的正常工作期间,电流比较器被配置为电流镜来缓冲模拟电流输出。
    • 10. 发明授权
    • Adaptable MOS current mirror
    • 适应MOS电流镜
    • US5160899A
    • 1992-11-03
    • US781503
    • 1991-10-22
    • Janeen D. W. AndersonCarver A. MeadTimothy P. AllenMichael F. Wall
    • Janeen D. W. AndersonCarver A. MeadTimothy P. AllenMichael F. Wall
    • G06N3/063H01L27/06H03F1/02H03F1/30H03F3/45
    • G06N3/063H01L27/0629H03F1/0261H03F1/303H03F3/45479H03F3/45753H03F3/45977
    • An adaptable current mirror includes first and second MOS transistors. The first MOS transistor has its gate connected to its drain. A MOS capacitor structure is connected in series between the gate of the first MOS transistor and the gate of the second MOS transistor. Electrons may be placed onto and removed in an analog manner from a floating node associated with the second MOS transistor, usually the gate of the transistor, by application of first and second electrical control signals. A first electrical control signal controls the injection of electrons onto the floating node from an electron injection structure and the second electrical control signal controls the removal of electrons from the floating node by an electron removal structure. A plurality of adaptable current mirrors communicating with a plurality of current-carrying lines may be employed for indicating the output of the one of the plurality of current-carrying lines through which the most current is flowing.
    • 适应电流镜包括第一和第二MOS晶体管。 第一个MOS晶体管的栅极连接到其漏极。 MOS电容器结构串联连接在第一MOS晶体管的栅极和第二MOS晶体管的栅极之间。 电子可以通过施加第一和第二电气控制信号,以模拟方式从与第二MOS晶体管(通常是晶体管的栅极)相关联的浮动节点放置和去除。 第一电控信号控制电子从电子注入结构注入到浮动节点上,第二电控信号通过电子去除结构控制从浮动节点去除电子。 可以采用与多个载流线路通信的多个适应电流镜,以指示最流动的多个通电线路中的一个的输出。