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1. 发明授权

US06280523B1 Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting 有权
标题翻译：通过激光熔化对晶片接合AlxGayInzN结构进行厚度裁剪
公开(公告)号：US06280523B1
公开(公告)日：2001-08-28
申请号：US09245448
申请日：1999-02-05
申请人： Carrie Carter Coman , Fred A. Kish, Jr. , R. Scott Kern , Michael R. Krames , Paul S. Martin
发明人： Carrie Carter Coman , Fred A. Kish, Jr. , R. Scott Kern , Michael R. Krames , Paul S. Martin
IPC分类号： C30B2512
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/105 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/32341 , Y10S117/915
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译：具有垂直光路的发光器件，例如可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。电触点被添加到发光器件中。

2. 发明授权

US5779924A Ordered interface texturing for a light emitting device 失效
标题翻译：用于发光器件的有序接口纹理
公开(公告)号：US5779924A
公开(公告)日：1998-07-14
申请号：US620518
申请日：1996-03-22
申请人： Michael R. Krames , Fred A. Kish, Jr.
发明人： Michael R. Krames , Fred A. Kish, Jr.
IPC分类号： H01L33/20 , H01L33/22 , B44C1/22
CPC分类号： H01L33/20 , H01L33/22 , H01L33/38
摘要： This method relates to the fabrication of semiconductor light-emitting devices having at least one ordered textured interface. Controlled interface texturing with an ordered pattern is provided on any or all interfaces of such a device to enhance light extraction from these interfaces and thus improve the performance of the device. Ordered interface texturing offers an improvement in light extraction by increasing the transmission of total optical power from the device into the ambient. This improvement is possible because ordered interface texturing can provide: 1) a reduction in Fresnel losses at the interface between the device and the ambient and, 2) a change or increase in the angular bandwidth of light which may transmit power into the ambient. This latter effect may be thought of a change or increase in the escape cone at an interface. Both effects can result in an overall increase in total light extraction efficiency for the LED.
摘要翻译：该方法涉及具有至少一个有序纹理界面的半导体发光器件的制造。在这种设备的任何或所有接口上提供具有有序模式的受控接口纹理，以增强从这些接口的光提取，从而提高设备的性能。有序的界面纹理通过增加从设备到环境中的总光功率的传输来提供光提取的改进。这种改进是可能的，因为有序的界面纹理可以提供：1）在设备和环境之间的接口处减少菲涅尔损耗，以及2）可以将功率传输到环境中的光的角度带宽的改变或增加。后一种效应可以被认为在界面处的逃避锥的变化或增加。这两种效应可以导致LED的总光提取效率的总体增加。

3. 发明授权

US6046465A Buried reflectors for light emitters in epitaxial material and method for producing same 失效
标题翻译：用于外延材料中的发光体的埋地反射器及其制造方法
公开(公告)号：US6046465A
公开(公告)日：2000-04-04
申请号：US62368
申请日：1998-04-17
申请人： Shih-Yuan Wang , Yong Chen , Scott W. Corzine , R. Scott Kern , Carrie C. Coman , Michael R. Krames , Frederick A. Kish, Jr. , Yawara Kaneko
发明人： Shih-Yuan Wang , Yong Chen , Scott W. Corzine , R. Scott Kern , Carrie C. Coman , Michael R. Krames , Frederick A. Kish, Jr. , Yawara Kaneko
IPC分类号： H01L33/10 , H01L33/12 , H01L33/24 , H01S5/00 , H01S5/02 , H01S5/14 , H01S5/183 , H01S5/187 , H01S5/323 , H01S5/343 , C30B19/00 , H01L33/00
CPC分类号： H01L33/24 , H01L33/10 , H01L33/12 , H01S5/18341 , H01S5/0205 , H01S5/0213 , H01S5/0425 , H01S5/18305 , H01S5/18369 , H01S5/32341
摘要： A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocation defect density where it is grown over the buried reflector making it suitable for high quality optical light emitting devices, and the embedded reflector eliminates the need for developing an additional reflector.
摘要翻译：外延横向生长层中的掩埋反射体50形成发光器件的一部分，并允许制造基本上低的位错密度的半导体材料。横向生长的材料的位错缺陷密度低，在掩埋反射器上生长，使其适用于高质量的光发射器件，并且嵌入式反射器消除了开发另外的反射器的需要。

4. 发明授权

US07488621B2 Package-integrated thin film LED 有权
标题翻译：封装集成薄膜LED
公开(公告)号：US07488621B2
公开(公告)日：2009-02-10
申请号：US11421350
申请日：2006-05-31
申请人： John E. Epler , Paul S. Martin , Michael R. Krames
发明人： John E. Epler , Paul S. Martin , Michael R. Krames
IPC分类号： H01L21/00
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.
摘要翻译：在衬底上生长LED外延层（n型，p型和有源层）。对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。封装衬底提供电触头和导体，导致可焊接的封装连接。然后除去生长底物。因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

5. 发明授权

US07256483B2 Package-integrated thin film LED 有权
标题翻译：封装集成薄膜LED
公开(公告)号：US07256483B2
公开(公告)日：2007-08-14
申请号：US10977294
申请日：2004-10-28
申请人： John Epler , Paul S. Martin , Michael R. Krames
发明人： John Epler , Paul S. Martin , Michael R. Krames
IPC分类号： H01L23/495
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.
摘要翻译：在衬底上生长LED外延层（n型，p型和有源层）。对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。封装衬底提供电触头和导体，导致可焊接的封装连接。然后除去生长底物。因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

6. 发明申请

US20110084301A1 PACKAGE-INTEGRATED THIN FILM LED 有权
标题翻译：封装集成薄膜LED
公开(公告)号：US20110084301A1
公开(公告)日：2011-04-14
申请号：US12969709
申请日：2010-12-16
申请人： John Epler , Paul S. Martin , Michael R. Krames
发明人： John Epler , Paul S. Martin , Michael R. Krames
IPC分类号： H01L33/48 , H01L33/36
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.
摘要翻译：在衬底上生长LED外延层（n型，p型和有源层）。对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。封装衬底提供电触头和导体，导致可焊接的封装连接。然后除去生长底物。因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

7. 发明授权

US06784463B2 III-Phospide and III-Arsenide flip chip light-emitting devices 有权
标题翻译： III型磷化物和III型砷化物倒装芯片发光器件
公开(公告)号：US06784463B2
公开(公告)日：2004-08-31
申请号：US10095552
申请日：2002-03-11
申请人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
发明人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
摘要翻译：发光半导体器件包括包括有源区的层叠层。有源区包括选自III-磷化物，III-砷化物及其合金的半导体。对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

8. 发明授权

US07875533B2 Package-integrated thin film LED 有权
标题翻译：封装集成薄膜LED
公开(公告)号：US07875533B2
公开(公告)日：2011-01-25
申请号：US12368213
申请日：2009-02-09
申请人： John E. Epler , Paul S. Martin , Michael R. Krames
发明人： John E. Epler , Paul S. Martin , Michael R. Krames
IPC分类号： H01L21/20
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.
摘要翻译：在衬底上生长LED外延层（n型，p型和有源层）。对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。封装衬底提供电触头和导体，导致可焊接的封装连接。然后除去生长底物。因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

9. 发明申请

US20100041170A1 Package-Integrated Thin Film LED 有权
标题翻译：封装集成薄膜LED
公开(公告)号：US20100041170A1
公开(公告)日：2010-02-18
申请号：US12368213
申请日：2009-02-09
申请人： John E. Epler , Paul S. Martin , Michael R. Krames
发明人： John E. Epler , Paul S. Martin , Michael R. Krames
IPC分类号： H01L33/00
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.
摘要翻译：在衬底上生长LED外延层（n型，p型和有源层）。对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。封装衬底提供电触头和导体，导致可焊接的封装连接。然后除去生长底物。因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

10. 发明授权

US08455913B2 Package-integrated thin film LED 有权
公开(公告)号：US08455913B2
公开(公告)日：2013-06-04
申请号：US12969709
申请日：2010-12-16
申请人： John Epler , Paul S. Martin , Michael R. Krames
发明人： John Epler , Paul S. Martin , Michael R. Krames
IPC分类号： H01L33/00
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

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