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    • 4. 发明申请
    • FLEXIBLE DEVICES INCLUDING SEMICONDUCTOR NANOCRYSTALS, ARRAYS, AND METHODS
    • 柔性器件包括半导体纳米晶体,阵列和方法
    • WO2009099425A2
    • 2009-08-13
    • PCT/US2008/013504
    • 2008-12-08
    • QD VISION, INC.KAZLAS, Peter, T.COX, MarshallCOE-SULLIVAN, SethKYMISSIS, Ioannis
    • KAZLAS, Peter, T.COX, MarshallCOE-SULLIVAN, SethKYMISSIS, Ioannis
    • H01L33/00
    • H01L51/502B82Y20/00H01L27/3293H01L51/0037H01L51/5203H01L51/5237H01L51/5246H01L51/5253H01L51/5259H01L2251/5338
    • The present invention relates to flexible devices including semiconductor nanocrystals, arrays including such devices, systems including the foregoing, and related methods. In one embodiment, a flexible light-emitting device includes a flexible substrate including a first electrode, an emissive layer comprising semiconductor nanocrystals disposed over the substrate, and second electrode disposed over the emissive layer comprising semiconductor nanocrystals, wherein, when the device is curved, the emissive layer comprising semiconductor nanocrystals lies substantially in the neutral plane of the device. In another embodiment, a light-emitting device includes an emissive layer comprising semiconductor nanocrystals disposed between two flexible substrates, a first electrode disposed over the emissive layer comprising semiconductor nanocrystals, and a second electrode disposed under the emissive layer comprising semiconductor nanocrystals. In certain preferred embodiments, at least one charge transport layer is disposed between one of the electrodes and the layer comprising semiconductor nanocrystals.
    • 本发明涉及包括半导体纳米晶体的柔性器件,包括这种器件的阵列,包括上述的系统和相关方法。 在一个实施例中,柔性发光装置包括柔性衬底,柔性衬底包括第一电极,包括设置在衬底上的半导体纳米晶体的发射层以及设置在包括半导体纳米晶体的发射层上的第二电极,其中当装置弯曲时, 包含半导体纳米晶体的发射层基本位于器件的中性面内。 在另一个实施例中,发光装置包括发射层,该发射层包括设置在两个柔性基底之间的半导体纳米晶体,设置在包含半导体纳米晶体的发射层上的第一电极以及设置在包含半导体纳米晶体的发射层下的第二电极。 在某些优选的实施方案中,至少一个电荷传输层设置在电极之一和包含半导体纳米晶体的层之间。
    • 9. 发明申请
    • PHOTONIC CRYSTAL CAVITY ARRAY
    • WO2013158842A1
    • 2013-10-24
    • PCT/US2013/037114
    • 2013-04-18
    • ENGLUND, DirkGAN, XuetaoKYMISSIS, IoannisPERVEZ, Nadia
    • ENGLUND, DirkGAN, XuetaoKYMISSIS, IoannisPERVEZ, Nadia
    • G02B6/10G02B26/00
    • G02B6/126B82Y20/00G02B6/12004G02B6/1225G02B6/29359
    • An apparatus, such as an integrated device or instrument, can include an optical waveguide and a photonic crystal included in or optically coupled to the optical waveguide. The photonic crystal can include a first array of periodic features extending in two dimensions on or within the dielectric material, and a second array of periodic features extending in two dimensions on or within the dielectric material. The first and second arrays of periodic features can include respective specified lattice constants and respective specified dielectric discontinuities in the first and second arrays of periodic features. Respective desired portions of propagating optical energy can be extracted from the waveguide through the photonic crystal, such as determined by the respective first and second specified lattice constants and the respective specified dielectric discontinuities. The specified dielectric discontinuities can be referred to as cavities, though such discontinuities need not be an aperture or void.
    • 诸如集成装置或仪器的装置可以包括光波导和包括在光学波导中或光学耦合到光波导的光子晶体。 光子晶体可以包括在电介质材料上或内部二维延伸的周期性特征的第一阵列,以及在电介质材料上或内部在二维中延伸的第二阵列的周期性特征。 周期特征的第一和第二阵列可以包括在第一和第二周期特征阵列中的相应的指定晶格常数和相应的指定介电不连续性。 可以通过光子晶体从波导提取传播光能的各个期望部分,例如由相应的第一和第二指定晶格常数和相应的指定电介质不连续性确定。 指定的电介质不连续性可以被称为腔,尽管这种不连续性不需要是孔或空隙。
    • 10. 发明申请
    • OFET INCLUDING PVDF-TRFE-CFE DIELECTRIC
    • OFET包括PVDF-TRFE-CFE电介质
    • WO2013106021A1
    • 2013-07-18
    • PCT/US2012/032382
    • 2012-04-05
    • ZHANG, JiaPERVEZ, NadiaCARTA, FabioKYMISSIS, Ioannis
    • ZHANG, JiaPERVEZ, NadiaCARTA, FabioKYMISSIS, Ioannis
    • H01L51/05H01L51/40
    • H01L51/0096H01L27/283H01L51/05H01L51/052H01L2251/10Y02E10/549Y02P70/521
    • An organic electrical device can include a first dielectric substrate including a PVDF-TrFe-CFE terpolymer, a first semiconductor region coupled to a first surface of the first dielectric substrate, and a first gate region coupled to a second surface of the first dielectric substrate, the second surface opposite the first surface and opposite the first semiconductor region. The organic electrical device can include an organic field-effect transistor (OFET), comprising the first gate region, the first dielectric substrate, a first source region, and a first drain region respectively electrically coupled to the first semiconductor region. An electrostrictive actuator or mechanical sensor can be co-integrated on the first dielectric substrate, the actuator or sensor including first and second conductive regions located on opposite surfaces of the first dielectric substrate. The actuator or sensor can be electrically coupled to the OFET, and controlled at least in part by the OFET.
    • 有机电气装置可以包括第一电介质衬底,其包括PVDF-TrFe-CFE三元共聚物,耦合到第一电介质衬底的第一表面的第一半导体区域和耦合到第一电介质衬底的第二表面的第一栅区, 所述第二表面与所述第一表面相对并且与所述第一半导体区域相对。 有机电子器件可以包括有机场效应晶体管(OFET),其包括分别电耦合到第一半导体区域的第一栅极区域,第一电介质衬底,第一源极区域和第一漏极区域。 电致伸缩致动器或机械传感器可以共同集成在第一电介质基板上,致动器或传感器包括位于第一电介质基板的相对表面上的第一和第二导电区域。 致动器或传感器可以电耦合到OFET,并且至少部分地由OFET控制。