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1. 发明申请

WO2006066050A2 SYSTEM AND METHOD FOR OPTICALLY POWERING A REMOTE NETWORK COMPONENT 审中-公开
标题翻译：用于光学地驱动远程网络组件的系统和方法
公开(公告)号：WO2006066050A2
公开(公告)日：2006-06-22
申请号：PCT/US2005/045518
申请日：2005-12-15
申请人： CORNING INCORPORATED , NISHIYAMA, Nobuhiko , SAUER, Michael , ZAH, Chung-en
发明人： NISHIYAMA, Nobuhiko , SAUER, Michael , ZAH, Chung-en
IPC分类号： H01S3/00
CPC分类号： H04B10/807
摘要： Both a system and method for optically powering a network component, such as the transponder of a picocell, is provided. The system includes a vertical cavity surface emitting laser (VCSEL) for processing an input signal, a remotely-located optical power source, and an optical fiber for conducting optical power from the source to the VCSEL. The VCSEL may be electrically biased from current generated by an optical-electro converter coupled to the fiber, or directly optically biased from light from the optical power source. A bias tee is connected between an input signal and an input of the VCSEL such that the VCSEL generates a modulated optical signal. The system may be the transponder of a picocell system where the VCSEL generates an optical uplink signal conducted to a head-end circuit via the same or a separate optical fiber.
摘要翻译：提供了用于给诸如微微小区的应答器之类的网络组件进行光学供电的系统和方法。该系统包括用于处理输入信号的垂直腔表面发射激光器（VCSEL），位于远处的光功率源，以及用于将光功率从光源传导至VCSEL的光纤。 VCSEL可以由耦合到光纤的光电转换器产生的电流电偏置，或者从来自光功率源的光直接光偏置。偏置三通连接在输入信号和VCSEL的输入之间，使得VCSEL产生调制的光信号。该系统可以是微微小区系统的应答器，其中VCSEL产生通过相同或分离的光纤传导到头端电路的光上行链路信号。

2. 发明申请

WO2007067394A1 SYSTEM AND METHOD FOR MODULATING A SEMICONDUCTOR LASER 审中-公开
标题翻译：用于调制半导体激光的系统和方法
公开(公告)号：WO2007067394A1
公开(公告)日：2007-06-14
申请号：PCT/US2006/045658
申请日：2006-11-30
申请人： CORNING INCORPORATED , HU, Martin, H. , NISHIYAMA, Nobuhiko , ZAH, Chung-En
发明人： HU, Martin, H. , NISHIYAMA, Nobuhiko , ZAH, Chung-En
IPC分类号： H04B10/155 , H01S5/0625
CPC分类号： H04N9/3129 , H01S5/005 , H01S5/0092 , H01S5/06213 , H01S5/06251 , H01S5/06253 , H01S5/06256 , H04B10/54
摘要： Both a system and method are provided for modulating the intensity of an output beam generated by semiconductor laser. The exemplary system includes a source of pulsating current connected to the laser that generates a pulsating beam of laser light, an external modulator having an input that receives the pulsating beam, and an output controlled by pulsating control signal, wherein the output beam transmitted by the external modulator output is modulated by changing a relative phase angle between the pulsating current powering the laser, and the control signal of the external modulator over time. The external modulator may be an intensity-type modulator whose output is controlled by a gate signal having a constant phase, and the source of pulsating current powering the laser may be variable phase in order to modulate the output beam with an external modulator having a simple structure. Both the system and method are advantageously compatible with DFB lasers, and avoid wavelength drift and the consequent thermally induced patterning effect by powering the laser with a pulsating current having a constant duty cycle.
摘要翻译：提供了一种用于调制由半导体激光器产生的输出光束的强度的系统和方法。示例性系统包括连接到激光器的脉动电流源，其产生脉冲激光束;外部调制器，其具有接收脉动光束的输入端，以及由脉动控制信号控制的输出，其中由通过改变为激光供电的脉动电流与外部调制器的控制信号之间的相对相位角随时间变化来调制外部调制器输出。外部调制器可以是强度型调制器，其输出由具有恒定相位的栅极信号控制，为激光供电的脉动电流源可以是可变相位，以便用具有简单的外部调制器调制输出光束结构体。系统和方法都有利地与DFB激光器兼容，并且通过用具有恒定占空比的脉动电流为激光器供电来避免波长漂移和随之而来的热诱导图案化效应。

3. 发明申请

WO2006031984A2 METHOD OF MANUFACTURING AN INP BASED VERTICAL CAVITY SURFACE EMITTING LASER AND DEVICE PRODUCED THEREFROM 审中-公开
标题翻译：制造基于垂直孔表面发射激光器的方法及其制造的器件
公开(公告)号：WO2006031984A2
公开(公告)日：2006-03-23
申请号：PCT/US2005/032984
申请日：2005-09-16
申请人： CORNING INCORPORATED , CANEAU, Catherine G , HALL, Benjamin L , NISHIYAMA, Nobuhiko , ZAH, Chung-En
发明人： CANEAU, Catherine G , HALL, Benjamin L , NISHIYAMA, Nobuhiko , ZAH, Chung-En
IPC分类号： H01S5/00
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306 , H01S5/34313
摘要： A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature in degrees Centigrade, and fabricating at least half of the high index layers of the distributed Bragg reflector (DBR) of the VCSEL from AlGaInAs or other material that can be epitaxially grown on the InP substrate to have a band gap equal to or greater than the sum of the photon energy (in milli-electron volts) plus the sum of the maximum operating temperature plus 110 divided by 1.96. The manufacture of the high index layers with such a band gap creates a sufficient difference in the indices of refraction of the alternating layers in the DBR, while keeping optical absorption low to maintain the reflectivity at least up to the desired maximum temperature, and obviates the need for using a DBR either bonded to the InP substrate, or grown metamorphically on it.
摘要翻译：一种制造具有高反射率分布布拉格反射器（DBR）的磷化铟基垂直腔表面发射激光器（VCSEL）的方法，其特别适用于发射中心波长约1.30微米的光。该方法包括以下步骤：选择特定的工作波长，确定对应于所选择的工作波长的光子能量，以摄氏度选择最大工作温度，以及制造分布布拉格反射器（DBR）的至少一半的高折射率层，的来自AlGaInAs的VCSEL或可以在InP衬底上外延生长的其它材料，以具有等于或大于光子能量（以毫电子伏特）加上最大工作温度加和110之和的带隙除以1.96。具有这种带隙的高折射率层的制造在DBR中的交替层的折射率产生足够的差异，同时保持光吸收低以保持反射率至少达到期望的最高温度，并且消除需要使用结合到InP底物的DBR，或者在其上变质生长。

4. 发明申请

WO2006058040A2 SEMICONDUCTOR DEVICES ON MISORIENTED SUBSTRATES 审中-公开
标题翻译：多晶硅衬底上的半导体器件
公开(公告)号：WO2006058040A2
公开(公告)日：2006-06-01
申请号：PCT/US2005/042390
申请日：2005-11-21
申请人： CORNING INCORPORATED , CANEAU, Catherine G , NISHIYAMA, Nobuhiko , GURYANOV, Georgiy
发明人： CANEAU, Catherine G , NISHIYAMA, Nobuhiko , GURYANOV, Georgiy
IPC分类号： H01L29/167
CPC分类号： H01S5/18355 , B82Y20/00 , H01L29/205 , H01L33/025 , H01L33/16 , H01S5/18308 , H01S5/18327 , H01S5/18358 , H01S5/18394 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/3202 , H01S5/3235 , H01S5/34313 , H01S2301/14 , H01S2304/04
摘要： A semiconductor device (100) includes a misoriented substrate (240) having a surface area inclined in a range of about 8 to 40 degrees from the {100} plane. At least one highly doped P-type semiconductor layer (106) of a first semiconductor material doped with Carbon (C) is grown over the surface area. At least one highly doped N-type semiconductor layer (104) of a second semiconductor material is grown over the surface area and near the at least one highly doped P-type semiconductor layer (106). A moderately doped P-type layer (60) is grown over the surface area, wherein the moderately doped P-type layer 60 has a third semiconductor material doped with a dopant selected as a member from the group consisting of Zn, Be, Cd and Mg. The devices 100 include VCSELs having tunnel junctions (110) and semiconductor DBRs (230) composed of AlGaInAs/InP or GaInAs/InP layers (2308/2302) on misoriented substrates 240.
摘要翻译：半导体器件（100）包括具有从{100}平面倾斜在约8至40度范围内的表面积的取向偏移的衬底（240）。在表面积上生长掺杂有碳（C）的第一半导体材料的至少一个高掺杂P型半导体层（106）。第二半导体材料的至少一个高掺杂N型半导体层（104）生长在表面区域上并且在至少一个高掺杂P型半导体层（106）附近。在表面积上生长适度掺杂的P型层（60），其中中等掺杂的P型层60具有掺杂有选自Zn，Be，Cd的一组成员的掺杂剂的第三半导体材料，以及镁。器件100包括具有隧道结（110）的VCSEL和由偏置衬底240上的AlGaInAs / InP或GaInAs / InP层（2308/2302）组成的半导体DBR（230）。

5. 发明申请

WO2005117135A1 TUNNEL JUNCTIONS FOR LONG-WAVELENGTH VCSELS 审中-公开
标题翻译：用于长波长VCSELS的隧道连接
公开(公告)号：WO2005117135A1
公开(公告)日：2005-12-08
申请号：PCT/US2005/017288
申请日：2005-05-17
申请人： CORNING INCORPORATED , BHAT, Rajaram , NISHIYAMA, Nobuhiko
发明人： BHAT, Rajaram , NISHIYAMA, Nobuhiko
IPC分类号： H01L29/88
CPC分类号： H01S5/18308 , H01L29/205 , H01S5/18358 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/3235 , H01S2304/04
摘要： A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110).
摘要翻译：具有受体的最小氢钝化的隧道结装置（102）包括掺杂有碳的第一半导体材料的p型隧道结层（106）。第一半导体材料包括铝，镓，砷和锑。第二半导体材料的n型隧道结层（104）包括铟，镓，砷和铝和磷中的一种。 p型和a型隧道结层之间的结形成隧道结（110）。

6. 发明申请

WO2007067408A2 METHOD AND DEVICE FOR PERFORMING DBR LASER WAVELENGTH MODULATION FREE OF THERMAL EFFECT 审中-公开
标题翻译：用于执行无热影响的DBR激光波长调制的方法和装置
公开(公告)号：WO2007067408A2
公开(公告)日：2007-06-14
申请号：PCT/US2006/045856
申请日：2006-12-01
申请人： CORNING INCORPORATED , HU, Martin H. , NISHIYAMA, Nobuhiko
发明人： HU, Martin H. , NISHIYAMA, Nobuhiko
IPC分类号： H01S3/10 , H01S5/00 , H01S3/04
CPC分类号： H01S5/06256 , H01S5/0092 , H01S5/06253 , H04N9/3129
摘要： The present invention is directed to a method and system for providing a three-level current scheme to a semiconductor laser to control beam wavelength and laser temperature. A first current is received into a gain section of the semiconductor laser and at least one other current is received into a DBR and/or phase section of the semiconductor laser. This other current(s) is pulse-width modulated based upon a required temperature value. An output beam is generated by the semiconductor laser based upon the received first current and the received pulse-width modulated current(s).
摘要翻译：本发明涉及一种用于向半导体激光器提供三电平电流方案以控制光束波长和激光器温度的方法和系统。第一电流被接收到半导体激光器的增益部分中，并且至少一个其它电流被接收到半导体激光器的DBR和/或相位部分中。基于所需的温度值对其它电流进行脉冲宽度调制。基于所接收的第一电流和所接收的脉冲宽度调制电流，由半导体激光器产生输出光束。

7. 发明申请

WO2014081048A1 PHOTOVOLTAIC CELL AND PHOTOVOLTAIC CELL MANUFACTURING METHOD 审中-公开
标题翻译：光电池和光电池制造方法
公开(公告)号：WO2014081048A1
公开(公告)日：2014-05-30
申请号：PCT/JP2013/082309
申请日：2013-11-25
申请人： RICOH COMPANY, LTD. , SATO, Shunichi , NISHIYAMA, Nobuhiko
发明人： SATO, Shunichi , NISHIYAMA, Nobuhiko
IPC分类号： H01L31/06
CPC分类号： H01L31/1836 , H01L31/035236 , H01L31/043 , H01L31/0687 , H01L31/06875 , H01L31/1804 , H01L31/1852 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.
摘要翻译：光电池制造方法包括：在第一硅衬底上沉积用于进行晶格弛豫的第一缓冲层; 在第一缓冲层上沉积第一光电转换单元，第一光电转换单元由具有pn结的化合物半导体形成，第一光电转换单元的晶格常数高于硅的晶格常数; 将支撑基板连接到第一光电转换单元以形成第一层叠体; 以及从第一层叠体移除第一缓冲层和第一硅衬底。

8. 发明公开

EP1834386A2 SYSTEM AND METHOD FOR OPTICALLY POWERING A REMOTE NETWORK COMPONENT 审中-公开
标题翻译： SYSTEM AND METHOD FOR OPTICAL激励远程网络组件
公开(公告)号：EP1834386A2
公开(公告)日：2007-09-19
申请号：EP05854280.4
申请日：2005-12-15
申请人： Corning Incorporated
发明人： NISHIYAMA, Nobuhiko , SAUER, Michael , ZAH, Chung-en
IPC分类号： H01S3/00 , H04B10/00
CPC分类号： H04B10/807
摘要： Both a system and method for optically powering a network component, such as the transponder of a picocell, is provided. The system includes a vertical cavity surface emitting laser (VCSEL) for processing an input signal, a remotely-located optical power source, and an optical fiber for conducting optical power from the source to the VCSEL. The VCSEL may be electrically biased from current generated by an optical-electro converter coupled to the fiber, or directly optically biased from light from the optical power source. A bias tee is connected between an input signal and an input of the VCSEL such that the VCSEL generates a modulated optical signal. The system may be the transponder of a picocell system where the VCSEL generates an optical uplink signal conducted to a head-end circuit via the same or a separate optical fiber.

9. 发明授权

EP1790052B1 METHOD OF MANUFACTURING AN INP BASED VERTICAL CAVITY SURFACE EMITTING LASER AND DEVICE PRODUCED THEREFROM 失效转让
标题翻译：用于生产的垂直腔表面发射激光器 - 基于INP和产生装置
公开(公告)号：EP1790052B1
公开(公告)日：2014-11-19
申请号：EP05818490.4
申请日：2005-09-16
申请人： Corning Incorporated
发明人： CANEAU, Catherine G. , HALL, Benjamin L , NISHIYAMA, Nobuhiko , ZAH, Chung-En
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306 , H01S5/34313

10. 发明授权

EP1834386B1 SYSTEM AND METHOD FOR OPTICALLY POWERING A REMOTE NETWORK COMPONENT 有权
公开(公告)号：EP1834386B1
公开(公告)日：2019-03-13
申请号：EP05854280.4
申请日：2005-12-15
申请人： Corning Incorporated
发明人： NISHIYAMA, Nobuhiko , SAUER, Michael , ZAH, Chung-en
IPC分类号： H04B10/80

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