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1. 发明申请

WO2012039997A3 GROUP III NITRIDE-BASED GREEN-LASER DIODES AND WAVEGUIDE STRUCTURES THEREOF 审中-公开
公开(公告)号：WO2012039997A3
公开(公告)日：2012-03-29
申请号：PCT/US2011/051343
申请日：2011-09-13
申请人： CORNING INCORPORATED , BHAT, Rajaram , SIZOV, Dmitry , ZAH, Chung-En
发明人： BHAT, Rajaram , SIZOV, Dmitry , ZAH, Chung-En
IPC分类号： H01S5/343 , H01S5/20
摘要： Group III nitride-based laser diodes comprise an n-side cladding layer formed of n-doped (Al,In)GaN, an n-side waveguide layer formed of n-doped (Al)InGaN, an active region, a p-side waveguide layer formed of p-doped (Al)InGaN, and a p-side cladding layer formed of p-doped (Al,In)GaN. Optical mode is shifted away from high acceptor concentrations in p-type layers through manipulation of indium concentration and thickness of the n-side waveguide layer. Dopant and compositional profiles of the p-side cladding layer and the p-side waveguide layer are tailored to reduce optical loss and increased wall plug efficiency.

2. 发明申请

WO2010077810A2 MQW LASER STRUCTURE COMPRISING PLURAL MQW REGIONS 审中-公开
标题翻译： MQW激光结构包括多个MQW区域
公开(公告)号：WO2010077810A2
公开(公告)日：2010-07-08
申请号：PCT/US2009/067853
申请日：2009-12-14
申请人： CORNING INCORPORATED , BHAT, Rajaram , NAPIERALA, Jerome , SIZOV, Dmitry , ZAH, Chung-En
发明人： BHAT, Rajaram , NAPIERALA, Jerome , SIZOV, Dmitry , ZAH, Chung-En
IPC分类号： H01S5/30
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/041 , H01S5/20 , H01S5/2004 , H01S5/34333
摘要： Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.
摘要翻译：提供多量子阱激光器结构，其包括有源和/或无源MQW区域。每个MQW区域包括多个量子阱和中间势垒层。相邻的MQW区域被间隔层隔开，该隔离层比中间的阻挡层厚。量子阱的带隙低于中间势垒层和间隔层的带隙。有源区可以包括有源和无源MQW，并且被配置用于电泵浦受激发射的光子，或者其可以包括配置用于光泵浦激发的光子发射的有源MQW区域。

3. 发明申请

WO2013181040A1 LASER DIODES INCLUDING SUBSTRATES HAVING SEMIPOLAR SURFACE PLANE ORIENTATIONS AND NONPOLAR CLEAVED FACETS 审中-公开
标题翻译：激光二极体，包括具有两面表面平面定向和非绝缘面的基底
公开(公告)号：WO2013181040A1
公开(公告)日：2013-12-05
申请号：PCT/US2013/042225
申请日：2013-05-22
申请人： CORNING INCORPORATED , BHAT, Rajaram , SIZOV, Dmitry Sergeevich , ZAH, Chung-En
发明人： BHAT, Rajaram , SIZOV, Dmitry Sergeevich , ZAH, Chung-En
IPC分类号： H01S5/00
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01S5/305 , H01S5/3077 , H01S5/3202 , H01S5/3211 , H01S5/34333
摘要： Laser diodes and methods of fabricating laser diodes are disclosed. A laser diode includes a substrate including (Al,In)GaN, an n side cladding layer including (Al,In)GaN having an n-type conductivity, an n side waveguide layer including (Al,In)GaN having an n-type conductivity, an active region, a p side waveguide layer including (Al,In)GaN having a p-type conductivity, a p side cladding layer including (Al,In)GaN having a p-type conductivity, and a laser cavity formed by cleaved facets, The substrate includes a crystal structure having a surface plane orientation within about 10 degrees of a 2023 or a 2023 crystallographic plane orientation. The laser cavity is formed by cleaved facets that have an orientation corresponding to a nonpolar plane of the crystal structure of the substrate.
摘要翻译：公开了激光二极管和制造激光二极管的方法。激光二极管包括包括（Al，In）GaN的衬底，包括具有n型导电性的（Al，In）GaN的n侧包层，包括具有n型导电性的（Al，In）GaN的n侧波导层电导率，包括具有p型导电性的（Al，In）GaN的有源区，ap侧波导层，包括具有p型导电性的（Al，In）GaN的p侧包层和由切割面形成的激光腔衬底包括具有在2023或2023晶面取向的约10度内的表面取向的晶体结构。激光腔由具有与衬底的晶体结构的非极性平面对应的取向的切割小面形成。

4. 发明申请

WO2012118596A1 SEMICONDUCTOR LASERS WITH INDIUM CONTAINING CLADDING LAYERS 审中-公开
标题翻译：具有包含层压层的印刷的半导体激光器
公开(公告)号：WO2012118596A1
公开(公告)日：2012-09-07
申请号：PCT/US2012/023629
申请日：2012-02-02
申请人： CORNING INCORPORATED , BHAT, Rajaram , SIZOV, Dmitry Sergeevich , ZAH, Chung-En
发明人： BHAT, Rajaram , SIZOV, Dmitry Sergeevich , ZAH, Chung-En
IPC分类号： H01S5/343 , H01S5/32
CPC分类号： H01S5/343 , B82Y20/00 , H01S5/2004 , H01S5/3202 , H01S5/3216 , H01S5/34333
摘要： An embodiment of semiconductor laser comprising: (a) a GaN, AlGaN, InGaN, or AlN substrate; (b) an n-doped cladding layer situated over the substrate; (c) a p-doped cladding layer situated over the n-doped; (d) at least one active layer situated between the n-doped and the p-doped cladding layer, and at least one of said cladding layers comprises a superstructure structure of AlInGaN/GaN, AlInGaN/AlGaN, AlInGaN//InGaN or AlInGaN/AlN with the composition such that the total of lattice mismatch strain of the whole structure does not exceed 40 nm%.
摘要翻译：半导体激光器的实施例包括：（a）GaN，AlGaN，InGaN或AlN衬底; （b）位于衬底上方的n掺杂包覆层; （c）位于n掺杂之上的p掺杂包层; （d）位于n掺杂和p掺杂包层之间的至少一个有源层，并且所述包层中的至少一个包括AlInGaN / GaN，AlInGaN / AlGaN，AlInGaN / InGaN或AlInGaN / AlN的组成使得整个结构的晶格失配应变的总和不超过40nm％。

5. 发明申请

WO2012118593A1 STRAIN BALANCED LASER DIODE 审中-公开
标题翻译：应变平衡激光二极管
公开(公告)号：WO2012118593A1
公开(公告)日：2012-09-07
申请号：PCT/US2012/023560
申请日：2012-02-02
申请人： CORNING INCORPORATED , BHAT, Rajaram , SIZOV, Dmitry Sergeevich , ZAH, Chung-En
发明人： BHAT, Rajaram , SIZOV, Dmitry Sergeevich , ZAH, Chung-En
IPC分类号： H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/2031 , H01S5/3202 , H01S5/3216 , H01S5/3406 , H01S5/34333
摘要： According to the concepts of the present disclosure, laser diode waveguide configurations are contemplated where the use of Al in the waveguide layers of the laser is presented in the form of InGaN/ Al(In)GaN waveguiding superstructure (20) comprising optical confining wells (22; InGaN) and strain compensating barriers (24; Al(In)GaN). The composition of the optical confining wells (22) is chosen such that they provide strong optical confinement, even in the presence of the Al(In)GaN strain compensating barriers (24), but do not absorb lasing emission. The composition of the strain compensating barriers (24) is chosen such that the Al(In)GaN exhibits tensile strain that compensates for the compressive strain of InGaN optical confinement wells (22) but does not hinder the optical confinement.
摘要翻译：根据本公开的概念，可以考虑激光二极管波导配置，其中在激光器的波导层中使用Al以InGaN / Al（In）GaN波导上层结构（20）的形式呈现，该衬底包括光学限制孔（ 22; InGaN）和应变补偿屏障（24; Al（In）GaN）。选择光学限制阱（22）的组成，使得即使在存在Al（In）GaN应变补偿屏障（24）的情况下也提供强的光学约束，但不吸收激光发射。选择应变补偿屏障（24）的组成使得Al（In）GaN表现出补偿InGaN光限制孔（22）的压缩应变的拉伸应变，但不妨碍光学限制。

6. 发明申请

WO2011028855A1 ENHANCED P-CONTACTS FOR LIGHT EMITTING DEVICES 审中-公开
标题翻译：增强用于发光装置的P-CONT
公开(公告)号：WO2011028855A1
公开(公告)日：2011-03-10
申请号：PCT/US2010/047606
申请日：2010-09-02
申请人： BHAT, Rajaram , NAPIERALA, Jerome , SIZOV, Dmitry , XI, Jingqun , ZAH, Chung-En , CORNING INCORPORATED
发明人： BHAT, Rajaram , NAPIERALA, Jerome , SIZOV, Dmitry , XI, Jingqun , ZAH, Chung-En
IPC分类号： H01L33/02 , H01L33/32
CPC分类号： H01L33/02 , H01L33/32 , H01L33/40
摘要： An optoelectronic light emitting semiconductor device is provided comprising an active region, a p-type Group III nitride layer, an n-type Group III nitride layer, a p-side metal contact layer, an n-side metal contact layer, and an undoped tunneling enhancement layer. The p-side metal contact layer is characterized by a work function W satisfying the following relation: W ≤ e - AFF ± 0.025 eV where e- AFF is the electron affinity of the undoped tunneling enhancement layer. The undoped tunneling enhancement layer and the p-type Group III nitride layer comprise conduction and valence energy bands. The top of the valence band V1 of the undoped tunneling enhancement layer is above the top of the valence band V2 of the p-type Group III nitride layer at the band offset interface to generate a capacity for a relatively high concentration of holes in the undoped tunneling enhancement layer at the band offset interface. Additional embodiments are disclosed and claimed.
摘要翻译：提供了一种光电子发光半导体器件，其包括有源区，p型III族氮化物层，n型III族氮化物层，p侧金属接触层，n侧金属接触层和未掺杂的隧道增强层。 p侧金属接触层的特征在于满足以下关系式的功函数W：e = AFF±0.025eV其中e-AFF是未掺杂的隧道增强层的电子亲和力。未掺杂的隧道增强层和p型III族氮化物层包括导电和价态能带。未掺杂的隧道增强层的价带V1的顶部在带偏移界面处高于p型III族氮化物层的价带V2的顶部，以产生未掺杂的较高浓度的孔的能力隧道增强层在带偏移接口。公开和要求保护附加实施例。

7. 发明申请

WO2008150401A1 GAN LASERS ON ALN SUBSTRATES AND METHODS OF FABRICATION 审中-公开
标题翻译： GAN激光器在ALN基板和制造方法
公开(公告)号：WO2008150401A1
公开(公告)日：2008-12-11
申请号：PCT/US2008/006727
申请日：2008-05-28
申请人： CORNING INCORPORATED , BHAT, Rajaram , NAPIERALA, Jerome , SIZOV, Dmitry , ZAH, Chung-En
发明人： BHAT, Rajaram , NAPIERALA, Jerome , SIZOV, Dmitry , ZAH, Chung-En
IPC分类号： H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/183 , H01S5/3201 , H01S5/3216 , H01S2301/173
摘要： Ga(In)N -based laser structures and related methods of fabrication are proposed where Ga (In)N-based semiconductor laser structures are formed on AlN or GaN substrates (20) in a manner that addresses the need to avoid undue tensile strain in the semiconductor structure. In accordance with one embodiment of the present invention, a Ga (In)N-based semiconductor laser is provided on an AlN or GaN substrate provided with an AlGaN lattice adjustment layer (30) where the substrate (20), the lattice adjustment layer (30), the lower cladding region (60), the active waveguiding region (40), the upper cladding region (50), and the N and P type contact regions (70, 60) of the laser form a compositional continuum in the semiconductor laser. Additional embodiments are disclosed and claimed.
摘要翻译：提出了基于Ga（In）N的激光器结构和相关的制造方法，其中在AlN或GaN衬底（20）上形成Ga（In）N基半导体激光器结构，以满足需要避免不适当的拉伸应变半导体结构。根据本发明的一个实施例，在设置有AlGaN晶格调整层（30）的AlN或GaN衬底上设置Ga（In）N基半导体激光器，其中衬底（20），晶格调整层 30），激光的下包层区域（60），有源波导区域（40），上包层区域（50）以及N和P型接触区域（70,60）形成半导体中的组成连续体激光。公开并要求保护附加实施例。

8. 发明申请

WO2013025662A1 HOLE BLOCKING LAYERS IN NON-POLAR AND SEMI-POLAR GREEN LIGHT EMITTING DEVICES 审中-公开
标题翻译：非极性和半极绿色发光装置中的阻塞层
公开(公告)号：WO2013025662A1
公开(公告)日：2013-02-21
申请号：PCT/US2012/050675
申请日：2012-08-14
申请人： CORNING INCORPORATED , BHAT, Rajaram , SIZOV, Dmitry Sergeevich , ZAH, Chung-En
发明人： BHAT, Rajaram , SIZOV, Dmitry Sergeevich , ZAH, Chung-En
IPC分类号： H01S5/30
CPC分类号： H01S5/2004 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01S5/2009 , H01S5/3202 , H01S5/34333
摘要： Light emitting devices are provided comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device. The active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum. The n-type side of the light emitting device comprises an n-doped semiconductor region. The p-type side of the light emitting device comprises a p-doped semiconductor region. The n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate. Hole blocking layers according to the present disclosure comprise an n-doped semiconductor material and are interposed between the non-polar or semi-polar substrate and the active region of the light emitting device. The hole blocking layer (HBL) composition is characterized by a wider bandgap than that of the quantum well barrier layers of the active region.
摘要翻译：提供发光器件，其包括插入在器件的n型和p型侧之间的有源区和插入在器件的有源区和n型侧之间的空穴阻挡层。有源区域包括有源MQW结构，并且被配置为在光谱的绿色部分中电激发受激发射的光子。发光器件的n型侧包括n掺杂半导体区域。发光器件的p型侧包括p掺杂半导体区域。 n掺杂半导体区域包括n掺杂的非极性或n掺杂的半极性衬底。根据本公开的空穴阻挡层包括n掺杂半导体材料，并且介于非极性或半极性衬底和发光器件的有源区之间。空穴阻挡层（HBL）组合物的特征在于具有比有源区的量子阱势垒层更宽的带隙。

9. 发明申请

WO2009051650A1 GALLIUM NITRIDE SEMICONDUCTOR DEVICE ON SOI AND PROCESS FOR MAKING SAME 审中-公开
标题翻译： SOI上的氮化镓半导体器件及其制造方法
公开(公告)号：WO2009051650A1
公开(公告)日：2009-04-23
申请号：PCT/US2008/011578
申请日：2008-10-08
申请人： CORNING INCORPORATED , BHAT, Rajaram , GADKAREE, Kishor P , NAPIERALA, Jerome , PINCKNEY, Linda R , ZAH, Chung-En
发明人： BHAT, Rajaram , GADKAREE, Kishor P , NAPIERALA, Jerome , PINCKNEY, Linda R , ZAH, Chung-En
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/007 , H01L21/76254
摘要： Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.
摘要翻译：用于制造绝缘体上的氮化镓半导体的方法和装置包括：将单晶硅层结合到透明基板; 并在单晶硅层上生长单晶氮化镓层。

10. 发明申请

WO2011041197A1 GAS SENSOR BASED ON PHOTOACOUSTIC DETECTION 审中-公开
标题翻译：基于光电检测的气体传感器
公开(公告)号：WO2011041197A1
公开(公告)日：2011-04-07
申请号：PCT/US2010/049922
申请日：2010-09-23
申请人： CORNING INCORPORATED , ZAH, Chung-En , CANEAU, Catherine, G. , LIU, Anping , POLLARD, Scott, C. , XIE, Feng
发明人： ZAH, Chung-En , CANEAU, Catherine, G. , LIU, Anping , POLLARD, Scott, C. , XIE, Feng
IPC分类号： G01N21/17
CPC分类号： G01N21/1702 , G01N2021/1704
摘要： A photoacoustic gas detector and photoacoustic gas detection method are disclosed. The detector includes a laser source, an acoustic resonator, and at least one tuning fork positioned along a longitudinal length of the resonator. The detector is capable of performing fast measurements of the concentration of one or more target gases over a broad temperature range.
摘要翻译：公开了一种光声气体检测器和光声气体检测方法。检测器包括激光源，声谐振器和沿着谐振器的纵向长度定位的至少一个音叉。检测器能够在宽的温度范围内快速测量一种或多种目标气体的浓度。

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