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    • 3. 发明申请
    • WRITING TO AND CONFIGURING FLASH MEMORY
    • 写入和配置闪存
    • WO2007095579A2
    • 2007-08-23
    • PCT/US2007/062143
    • 2007-02-14
    • ATMEL CORPORATIONPEDERSEN, Frode MilchLAURENT, Marc
    • PEDERSEN, Frode MilchLAURENT, Marc
    • G11C29/08G11C16/04G11C2029/0401
    • Writing to flash memory may include receiving write commands that are substantially independent of an internal architecture of the flash memory. In certain implementations, two operand flash commands are received at a flash controller from a remote controller, and the writing process may further include translating each two-operand write command into architecture-dependent flash commands; executing the architecture-dependent flash commands to fill a page buffer associated with the flash memory; and subsequently transferring contents of the page buffer to a page of flash memory. A system for configuring or testing memory may cycle a memory array while substantially concurrently performing other functional testing. In particular implementations, the system may configure, or cycle, a flash memory (e.g., by erasing and writing specific patterns to dissipate charge that accumulated during a fabrication process) using a serial interface and test other functional units using the same serial interface substantially concurrently.
    • 对闪速存储器的写入可以包括接收基本上独立于闪存的内部架构的写入命令。 在某些实现中,在闪存控制器处从遥控器接收两个操作数闪存命令,并且写入过程还可以包括将每个两操作数写入命令转换成与体系结构相关的闪存命令; 执行依赖于架构的闪存命令以填充与闪存相关联的页面缓冲器; 并且随后将页面缓冲器的内容传送到闪存的页面。 用于配置或测试存储器的系统可以循环存储器阵列,同时基本上同时执行其他功能测试。 在特定实现中,系统可以使用串行接口来配置或循环闪速存储器(例如,通过擦除和写入特定模式以耗散在制造过程中累积的电荷),并且基本同时使用相同的串行接口来测试其他功能单元 。