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    • 6. 发明专利
    • Pre-stressed substrate manufacturing method for use in microelectronics involves bonding sequence of layers to meet pre-determined constraints
    • FR2848337A1
    • 2004-06-11
    • FR0215552
    • 2002-12-09
    • COMMISSARIAT ENERGIE ATOMIQUE
    • FOURNEL FRANCKMORICEAU HUBERTMONTMAYEUL PHILIPPE
    • H01L21/18H01L21/20H01L21/68H01L21/762H01L21/304
    • The method for making pre-stressed substrate by bonding structures (1,3) once the creation of a difference in the state of tangential constraints between the two faces to be assembled is achieved. The difference is chosen so to obtain a predetermined state of stress within the assembled structure in given conditions with respect to assembling conditions, in particular to reduce a jump in stresses at higher temperatures. The difference in the state of tangential constraints is obtained by curving or bending the two elementary structures to assemble, so to make the faces concave and convex, complementary, in particular spherically concave and spherically convex. The curvature of the two structures is obtained by the application of mechanical forces, in particular by deforming the two structures (1,3) between two preforms (2,4) of profiles chosen as a function of the two faces to assemble. The application of mechanical forces results in the creation of a pressure difference between the two faces, where the pressure difference is obtained by suction on a concave preform (2) or inside a cavity with a peripheral joint. The preform (2) is with a suction channel (5) for maintaining the structure (1) curved even when the preform (4) is lifted. The preform is a mould, a porous mould, or a deformable membrane. The assembling of the two structures is by molecular bonding, and the faces to assemble are treated to facilitate the bonding. The assembling of the two structures is by molecular bonding, and the faces to assemble are treated to facilitate the bonding. The assembling of substrates is by direct contact, and the substrates are adjusted so to avoid air trapping between the surfaces. At least one substrate is with an opening, which is at its center. At least one substrate comprises a channel opening up at the substrate edge. The assembling is implemented by a layer of material which becomes fluid at a higher temperature. The assembling is carried out at a temperature higher than the ambient temperature, and the substrates are heated by contact with heated preforms, possibly at different temperatures. The method includes a technological step of changing the temperature, and the difference in the state of tangential constraints is chosen so that the stresses inside the assembled structure remain below a predetermined threshold. The method also includes, after assembling the two structures, a step of thinning one of the structures, and the thin film can be assembled with another elementary structure. The method includes a step of epitaxial growth to obtain an epitaxial film on the external face of the complex structure. The lattice parameter of the thin film is chosen compatible with the epitaxial growth of additional material.
    • 9. 发明专利
    • METHOD OF PRODUCING A COMPLEX STRUCTURE BY ASSEMBLING STRESSED STRUCTURES
    • AU2003298413A1
    • 2004-08-10
    • AU2003298413
    • 2003-12-04
    • COMMISSARIAT ENERGIE ATOMIQUE
    • MORICEAU HUBERTMONTMAYEUL PHILIPPEFOURNEL FRANCK
    • H01L21/18H01L21/20H01L21/68H01L21/762H01L21/58
    • The method for making pre-stressed substrate by bonding structures (1,3) once the creation of a difference in the state of tangential constraints between the two faces to be assembled is achieved. The difference is chosen so to obtain a predetermined state of stress within the assembled structure in given conditions with respect to assembling conditions, in particular to reduce a jump in stresses at higher temperatures. The difference in the state of tangential constraints is obtained by curving or bending the two elementary structures to assemble, so to make the faces concave and convex, complementary, in particular spherically concave and spherically convex. The curvature of the two structures is obtained by the application of mechanical forces, in particular by deforming the two structures (1,3) between two preforms (2,4) of profiles chosen as a function of the two faces to assemble. The application of mechanical forces results in the creation of a pressure difference between the two faces, where the pressure difference is obtained by suction on a concave preform (2) or inside a cavity with a peripheral joint. The preform (2) is with a suction channel (5) for maintaining the structure (1) curved even when the preform (4) is lifted. The preform is a mould, a porous mould, or a deformable membrane. The assembling of the two structures is by molecular bonding, and the faces to assemble are treated to facilitate the bonding. The assembling of the two structures is by molecular bonding, and the faces to assemble are treated to facilitate the bonding. The assembling of substrates is by direct contact, and the substrates are adjusted so to avoid air trapping between the surfaces. At least one substrate is with an opening, which is at its center. At least one substrate comprises a channel opening up at the substrate edge. The assembling is implemented by a layer of material which becomes fluid at a higher temperature. The assembling is carried out at a temperature higher than the ambient temperature, and the substrates are heated by contact with heated preforms, possibly at different temperatures. The method includes a technological step of changing the temperature, and the difference in the state of tangential constraints is chosen so that the stresses inside the assembled structure remain below a predetermined threshold. The method also includes, after assembling the two structures, a step of thinning one of the structures, and the thin film can be assembled with another elementary structure. The method includes a step of epitaxial growth to obtain an epitaxial film on the external face of the complex structure. The lattice parameter of the thin film is chosen compatible with the epitaxial growth of additional material.
    • 10. 发明专利
    • Device for extracting gas from a chamber, comprises a duct matching the chamber opening and connected to a suction system, for higher efficiency of extraction
    • FR2832655A1
    • 2003-05-30
    • FR0115263
    • 2001-11-26
    • COMMISSARIAT ENERGIE ATOMIQUE
    • LYAN PHILIPPEMONTMAYEUL PHILIPPEFERRET PIERRE
    • B08B15/00B08B15/02A62B29/00B08B5/04
    • The device for extracting a gas from a chamber (20), in particular in the production of semiconductor devices, having at least one opening (21) through which the gas can escape, comprises at least one duct (26) movable on a rail (29-1) of a guiding system (29) so to connect with the chamber opening. The duct (26) defines a central passage (25) and has a connecting part (33) which fits the chamber opening (21). The duct comprises openings (27) in the central passage which are connected by a flexible pipe (28) to a suction system so that when the duct is in the connect position the gas from the chamber entering the duct is removed by the suction system thus preventing the pollution of the premises with possibly toxic gas. The contour of the central passage (25) is substantially of the same dimensions as the chamber opening (21). The duct (26) is made of a metal, for example the stainless steel, or a plastic, for example PVC. The duct (26) has no openings in the vicinity of the connection with the evacuation pipe (28) to allow for a more uniform suction distribution. The connecting part (33) comprises a skirting (33-1) along the central passage and a sealing ring (33-2). The guiding system (29) comprises a rail (29-1) and a sliding part (29-2) so that the duct (26) can be moved by translation to and from the chamber (20). In other embodiments of the invention, the evacuation pipe is with a valve, the motion of the duct with respect to the chamber is of type rotation with the guiding system comprising a mechanism with a prop having the role of a rail, or a telescopic connection, the chamber is in the form of a protective cover of the apparatus with two openings cooperating with two ducts for the gas extraction, and the extraction duct is adjoined with a duct for input of a gas such as nitrogen to create a gaseous barrier between the extraction duct and the chamber opening.