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1. 发明授权

US09647138B2 Metal oxide semiconductor transistor 有权
公开(公告)号：US09647138B2
公开(公告)日：2017-05-09
申请号：US13480742
申请日：2012-05-25
申请人： Chuang-Chuang Tsai , Hsiao-Wen Zan , Hsin-Fei Meng , Chun-Cheng Yeh
发明人： Chuang-Chuang Tsai , Hsiao-Wen Zan , Hsin-Fei Meng , Chun-Cheng Yeh
IPC分类号： H01L29/22 , H01L51/30 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/78606 , H01L29/78693
摘要： A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.

2. 发明申请

US20120313084A1 METAL OXIDE SEMICONDUCTOR TRANSISTOR 有权
标题翻译：金属氧化物半导体晶体管
公开(公告)号：US20120313084A1
公开(公告)日：2012-12-13
申请号：US13480742
申请日：2012-05-25
申请人： CHUANG-CHUANG TSAI , Hsiao-Wen Zan , Hsin-Fei Meng , Chun-Cheng Yeh
发明人： CHUANG-CHUANG TSAI , Hsiao-Wen Zan , Hsin-Fei Meng , Chun-Cheng Yeh
IPC分类号： H01L29/22 , H01L51/30
CPC分类号： H01L29/78696 , H01L29/78606 , H01L29/78693
摘要： A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.
摘要翻译：金属氧化物半导体晶体管包括栅极，金属氧化物有源层，栅极绝缘层，源极和漏极。金属氧化物活性层具有第一表面和第二表面，并且第一表面面向栅极。栅极绝缘层设置在栅极和金属氧化物有源层之间。源极和漏极分别连接到金属氧化物活性层。第二表面限定了源极和漏极之间的迁移率增强区域。迁移率增强区域中的金属氧化物活性层的氧含量小于迁移率增强区域外的区域中的金属氧化物活性层的氧含量。金属氧化物半导体晶体管具有高载流子迁移率。

3. 发明授权

US08927330B2 Methods for manufacturing a metal-oxide thin film transistor 有权
标题翻译：金属氧化物薄膜晶体管的制造方法
公开(公告)号：US08927330B2
公开(公告)日：2015-01-06
申请号：US13572710
申请日：2012-08-13
申请人： Hsiao-Wen Zan , Chuang-Chuang Tsai , Chun-Cheng Yeh , Liang-Hao Chen
发明人： Hsiao-Wen Zan , Chuang-Chuang Tsai , Chun-Cheng Yeh , Liang-Hao Chen
IPC分类号： H01L21/363 , H01L29/786
CPC分类号： H01L29/7869
摘要： Disclosed herein is a method for manufacturing a metal-oxide thin film transistor. The method includes the steps of: (a1) forming a gate electrode on a substrate; (a2) forming a gate insulating layer over the gate electrode; (a3) forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer; (a4) forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region; (a5) forming a mobility-enhancing layer on the channel region, wherein the mobility-enhancing layer is not in contact with the source electrode and the drain electrode; and (a6) annealing the metal-oxide semiconductor layer and the mobility-enhancing layer in an environment at a temperature of about 200° C. to 350° C.
摘要翻译：本文公开了一种制造金属氧化物薄膜晶体管的方法。该方法包括以下步骤：（a1）在基板上形成栅电极; （a2）在所述栅电极上形成栅极绝缘层; （a3）在栅极绝缘层上形成具有沟道区的金属氧化物半导体层; （a4）在所述金属氧化物半导体层上形成源电极和漏电极，其中所述源电极通过所述沟道区域露出的间隙与所述漏电极间隔开; （a5）在沟道区上形成迁移率增强层，其中迁移率增强层不与源电极和漏电极接触; 和（a6）在约200℃至350℃的温度的环境中退火金属氧化物半导体层和迁移率增强层。

4. 发明申请

US20120235120A1 VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME 有权
标题翻译：垂直电光元件及其制造方法
公开(公告)号：US20120235120A1
公开(公告)日：2012-09-20
申请号：US13111205
申请日：2011-05-19
申请人： Hsiao-Wen Zan , Hsin-Fei Meng , Wu-Wei Tsai , Yu-Chiang Chao
发明人： Hsiao-Wen Zan , Hsin-Fei Meng , Wu-Wei Tsai , Yu-Chiang Chao
IPC分类号： H01L51/52 , H01L51/56 , H01L51/48 , H01L51/44
CPC分类号： H01L51/442 , H01L51/057 , H01L51/4253 , H01L51/5215 , H01L51/5234 , H01L51/5296 , Y02E10/549
摘要： A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
摘要翻译：提供了一种垂直电光部件及其形成方法。垂直电光部件包括基板，形成在基板上的第一电极层，形成在第一电极层上的图案化绝缘层，形成在图案化绝缘层上的金属层，形成在第一电极层上的半导体层，以及形成在所述半导体层上的第二电极层，其中所述半导体层封装所述图案化绝缘层和所述金属层。因此，垂直电光部件具有垂直晶体管的低操作电压和光电二极管的高反应速度，并且可以用于形成发光晶体管。

5. 发明申请

US20110159171A1 Method for preparing organic light emitting diode and device thereof 审中-公开
标题翻译：制备有机发光二极管的方法及其装置
公开(公告)号：US20110159171A1
公开(公告)日：2011-06-30
申请号：US12803329
申请日：2010-06-23
申请人： Chain-Shu Hsu , Hsin-Fei Meng , Sheng-Fu Horng , Hsiao-Wen Zan , Hsin-Rong Tseng , Chung-Ling Yeh , Hung-Wei Hsu , Chang-Yao Liu , Hsiu-Yuan Yang
发明人： Chain-Shu Hsu , Hsin-Fei Meng , Sheng-Fu Horng , Hsiao-Wen Zan , Hsin-Rong Tseng , Chung-Ling Yeh , Hung-Wei Hsu , Chang-Yao Liu , Hsiu-Yuan Yang
IPC分类号： B05D5/06 , B05C9/14
CPC分类号： H01L51/0003 , H01L27/3239 , H01L51/56
摘要： A method for fabricating an organic light emitting diode and a device thereof are provided. The method includes: providing a substrate; dispensing to the substrate a second organic molecule solution resulting from dissolving a second organic molecule in a solvent; applying the second organic molecule solution to a surface of the substrate so as to form a wet film layer; and heating the wet film layer by a heating unit to remove the solvent therefrom and thereby form a second organic molecule film. The method is effective in fabricating a uniform multilayer structure for use in fabrication of large-area photoelectric components.
摘要翻译：提供一种制造有机发光二极管的方法及其装置。该方法包括：提供衬底; 将第二有机分子溶解在溶剂中得到的第二有机分子溶液; 将所述第二有机分子溶液施加到所述基板的表面以形成湿膜层; 并通过加热单元加热湿膜层以从其中除去溶剂，从而形成第二有机分子膜。该方法在制造用于制造大面积光电部件的均匀多层结构中是有效的。

6. 发明申请

US20220384737A1 HIGH CURRENT OTFT DEVICES WITH VERTICAL DESIGNED STRUCTURE AND DONOR-ACCEPTOR BASED ORGANIC SEMICONDUCTOR MATERIALS 有权
公开(公告)号：US20220384737A1
公开(公告)日：2022-12-01
申请号：US17873240
申请日：2022-07-26
申请人： Mingqian He , Robert George Manley , Karan Mehrotra , Hsin-Fei Meng , Hsiao-Wen Zan
发明人： Mingqian He , Robert George Manley , Karan Mehrotra , Hsin-Fei Meng , Hsiao-Wen Zan
IPC分类号： H01L51/00
摘要： Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

7. 发明授权

US08723165B2 Vertical electro-optical component and method of fabricating the same 有权
标题翻译：垂直电光元件及其制造方法
公开(公告)号：US08723165B2
公开(公告)日：2014-05-13
申请号：US13111205
申请日：2011-05-19
申请人： Hsiao-Wen Zan , Hsin-Fei Meng , Wu-Wei Tsai , Yu-Chiang Chao
发明人： Hsiao-Wen Zan , Hsin-Fei Meng , Wu-Wei Tsai , Yu-Chiang Chao
IPC分类号： H01L51/52 , H01L51/56 , H01L51/44
CPC分类号： H01L51/442 , H01L51/057 , H01L51/4253 , H01L51/5215 , H01L51/5234 , H01L51/5296 , Y02E10/549
摘要： A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
摘要翻译：提供了一种垂直电光部件及其形成方法。垂直电光部件包括基板，形成在基板上的第一电极层，形成在第一电极层上的图案化绝缘层，形成在图案化绝缘层上的金属层，形成在第一电极层上的半导体层，以及形成在所述半导体层上的第二电极层，其中所述半导体层封装所述图案化绝缘层和所述金属层。因此，垂直电光部件具有垂直晶体管的低操作电压和光电二极管的高反应速度，并且可以用于形成发光晶体管。

8. 发明授权

US08722454B2 Method for manufacturing organic electronic component having salt compound 有权
标题翻译：制造具有盐化合物的有机电子部件的方法
公开(公告)号：US08722454B2
公开(公告)日：2014-05-13
申请号：US13668451
申请日：2012-11-05
申请人： Hsin-Fei Meng , Hao-Wu Lin , Sheng-Fu Horng , Hsiao-Wen Zan , Hao-Wen Chang , Yu-Fan Chang , Yu-Chian Chiu
发明人： Hsin-Fei Meng , Hao-Wu Lin , Sheng-Fu Horng , Hsiao-Wen Zan , Hao-Wen Chang , Yu-Fan Chang , Yu-Chian Chiu
IPC分类号： H01L51/40
CPC分类号： H01L51/508 , H01L51/0003 , H01L51/0072 , H01L51/506 , H01L51/5076 , H01L51/56
摘要： A method for manufacturing an organic electronic component is provided. The method includes steps of providing a substrate and an organic material; coating the organic material onto the substrate; heating the substrate to form a first carrier transport layer; doping a material having a metal ion to an organic solvent to form an organic solution; and applying the organic solution onto the first carrier transport layer to form a second carrier transport layer.
摘要翻译：提供一种制造有机电子部件的方法。该方法包括提供基底和有机材料的步骤; 将有机材料涂覆到基材上; 加热衬底以形成第一载流子传输层; 将具有金属离子的材料掺杂到有机溶剂中以形成有机溶液; 以及将所述有机溶液施加到所述第一载流子传输层上以形成第二载流子传输层。

9. 发明申请

US20130005077A1 APPARATUS AND METHOD OF MANUFACTURING ORGANIC ELECTRONIC COMPONENT 审中-公开
标题翻译：装置和制造有机电子元件的方法
公开(公告)号：US20130005077A1
公开(公告)日：2013-01-03
申请号：US13281665
申请日：2011-10-26
申请人： Hsin-Fei Meng , Hsiao-Wen Zan , Sheng-Fu Horng , Hsiu-Yuan Yang , Kuo-Jui Huang , Hao-Wen Chang , Chun-Yu Chen , Yu-Chiang Chao , Yu-Fan Chang , Bo-Jie Chang
发明人： Hsin-Fei Meng , Hsiao-Wen Zan , Sheng-Fu Horng , Hsiu-Yuan Yang , Kuo-Jui Huang , Hao-Wen Chang , Chun-Yu Chen , Yu-Chiang Chao , Yu-Fan Chang , Bo-Jie Chang
IPC分类号： H01L51/40 , H05K13/00 , B05C9/14
CPC分类号： H01L51/0002 , B05D3/0254 , H01L51/0008 , H01L51/0026 , H01L51/0085 , H01L51/56 , Y02E10/549 , Y02P70/521 , Y10T29/49002
摘要： A chemical mechanical polishing method is provided. The chemical mechanical polishing method includes steps of providing a plurality of semiconductor elements to be polished, obtaining a respective dimension of the each semiconductor element to be polished, and polishing the each semiconductor element according to the respective dimension thereof.
摘要翻译：提供了化学机械抛光方法。化学机械抛光方法包括提供待研磨的多个半导体元件，获得待研磨的每个半导体元件的相应尺寸，并根据其各自的尺寸对每个半导体元件进行抛光的步骤。

10. 发明申请

US20120086431A1 VERTICAL TYPE SENSOR 有权
标题翻译：垂直式传感器
公开(公告)号：US20120086431A1
公开(公告)日：2012-04-12
申请号：US13009440
申请日：2011-01-19
申请人： Hsiao-Wen Zan , Hsin-Fei Meng , Ming-Zhi Dai , Yu-Chiang Chao
发明人： Hsiao-Wen Zan , Hsin-Fei Meng , Ming-Zhi Dai , Yu-Chiang Chao
IPC分类号： G01R19/00 , H01L21/02 , H01L29/66
CPC分类号： G01N27/3278 , G01N27/414 , G01N33/54373 , G01N33/5438 , H01L51/057 , H01L51/5203
摘要： The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
摘要翻译：本发明提供了一种垂直型传感器，包括基板; 形成在所述基板上的第一电极; 感测层，其形成在所述第一电极层上并且与目标物质反应，其中所述第一电极层介于所述基板和所述感测层之间; 以及形成在所述感测层上并且具有多个开口的第二电极层，其中所述感测层插入在所述第一电极层和所述第二电极层之间，并且所述目标物质经由所述多个开口接触所述感测层。本发明的垂直型传感器提供即时，灵敏和快速的检测。

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