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1. 发明申请

US20090311877A1 POST OXIDATION ANNEALING OF LOW TEMPERATURE THERMAL OR PLASMA BASED OXIDATION 审中-公开
标题翻译：低温热或基于等离子体氧化的氧化后退火
公开(公告)号：US20090311877A1
公开(公告)日：2009-12-17
申请号：US12143626
申请日：2008-06-20
申请人： CHRISTOPHER S. OLSEN , Yoshitaka Yokota , Rajesh Mani , Johanes Swenberg
发明人： CHRISTOPHER S. OLSEN , Yoshitaka Yokota , Rajesh Mani , Johanes Swenberg
IPC分类号： H01L21/316
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02337 , H01L21/28247 , H01L29/40114 , H01L29/40117 , H01L29/517
摘要： Embodiments of the present invention provide methods of forming oxide layers on semiconductor substrates. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes forming an oxide layer on a substrate using an oxidation process having a first process gas at a first temperature less than about 800 degrees Celsius; and annealing the oxide layer formed on the substrate in the presence of a second process gas and at a second temperature. The oxidation process may be a plasma or thermal oxidation process performed at a temperature of about 800 degrees Celsius or below. In some embodiments, the post oxidation annealing process may be a spike or soak rapid thermal process, a laser anneal, or a flash anneal performed at a temperature of at least about 700 degrees Celsius, at least about 800 degrees Celsius, or at least about 950 degrees Celsius.
摘要翻译：本发明的实施例提供了在半导体衬底上形成氧化物层的方法。在一些实施例中，在半导体衬底上形成氧化物层的方法包括：在第一温度低于约800摄氏度的氧化工艺中，使用具有第一工艺气体的氧化工艺在衬底上形成氧化物层; 以及在第二工艺气体的存在下和在第二温度下对形成在衬底上的氧化物层进行退火。氧化过程可以是在约800摄氏度或更低的温度下进行的等离子体或热氧化过程。在一些实施例中，后氧化退火工艺可以是在至少约700摄氏度，至少约800摄氏度或至少约800摄氏度的温度下执行的尖峰或浸泡快速热处理，激光退火或闪光退火 950摄氏度。

2. 发明申请

US20100248435A1 METHOD OF SELECTIVE NITRIDATION 有权
标题翻译：选择性硝化方法
公开(公告)号：US20100248435A1
公开(公告)日：2010-09-30
申请号：US12748523
申请日：2010-03-29
申请人： CHRISTOPHER S. OLSEN , JOHANES SWENBERG , UDAYAN GANGULY , THERESA KRAMER GUARINI , YONAH CHO
发明人： CHRISTOPHER S. OLSEN , JOHANES SWENBERG , UDAYAN GANGULY , THERESA KRAMER GUARINI , YONAH CHO
IPC分类号： H01L21/336
CPC分类号： H01L21/3144 , H01L21/02247 , H01L21/02326 , H01L21/02332 , H01L21/0234 , H01L21/3211 , H01L27/11521 , Y10S438/911
摘要： Methods of forming semiconductor devices are provided herein. In some embodiments, a method of forming a semiconductor device may include providing a substrate having an oxide surface and a silicon surface; forming a nitrogen-containing layer on exposed portions of both the oxide and silicon surfaces; and oxidizing the nitrogen-containing layer to selectively remove the nitrogen-containing layer from atop the oxide surface. In some embodiments, an oxide layer is formed atop a remaining portion of the nitrogen-containing layer formed on the silicon feature. In some embodiments, the oxide surface is an exposed surface of a shallow trench isolate region (STI) disposed adjacent to one or more floating gates of a semiconductor device. In some embodiments, the silicon surface is an exposed surface of a silicon or polysilicon floating gate of a semiconductor device.
摘要翻译：本文提供了形成半导体器件的方法。在一些实施例中，形成半导体器件的方法可以包括提供具有氧化物表面和硅表面的衬底; 在氧化物和硅表面的暴露部分上形成含氮层; 并氧化含氮层以从氧化物表面顶部选择性地除去含氮层。在一些实施例中，在形成于硅特征上的含氮层的剩余部分的顶部形成氧化物层。在一些实施例中，氧化物表面是与半导体器件的一个或多个浮动栅极相邻设置的浅沟槽隔离区域（STI）的暴露表面。在一些实施例中，硅表面是半导体器件的硅或多晶硅浮置栅极的暴露表面。

3. 发明申请

US20130012032A1 NH3 CONTAINING PLASMA NITRIDATION OF A LAYER ON A SUBSTRATE 有权
标题翻译：含有层析层的等离子体氮化物在基体上的NH3
公开(公告)号：US20130012032A1
公开(公告)日：2013-01-10
申请号：US13541941
申请日：2012-07-05
申请人： WEI LIU , MALCOLM J. BEVAN , CHRISTOPHER S. OLSEN , JOHANES SWENBERG
发明人： WEI LIU , MALCOLM J. BEVAN , CHRISTOPHER S. OLSEN , JOHANES SWENBERG
IPC分类号： H01L21/318
CPC分类号： H01L21/3105 , H01L21/02148 , H01L21/02164 , H01L21/02181 , H01L21/02332 , H01L21/0234
摘要： Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes exposing a first layer of a substrate to a plasma formed from a process gas comprising predominantly a mixture of ammonia (NH3) and a noble gas, wherein ammonia is about 0.5 to about 15 percent of the process gas; and maintaining the process chamber at a pressure of about 10 mTorr to about 80 mTorr while exposing the first layer to the plasma to transform at least an upper portion of the first layer into a nitrogen-containing layer.
摘要翻译：本文提供了形成含氮层的方法和装置。在一些实施方案中，一种方法包括将底物的第一层暴露于由主要包含氨（NH 3）和惰性气体的混合物的工艺气体形成的等离子体，其中氨为工艺气体的约0.5至约15％以及将处理室保持在约10mTorr至约80mTorr的压力，同时将第一层暴露于等离子体，以将至少第一层的上部转化为含氮层。

4. 发明申请

US20090035927A1 METHOD OF FORMING DIELECTRIC LAYERS ON A SUBSTRATE AND APPARATUS THEREFOR 有权
标题翻译：在基板上形成介质层的方法及其设备
公开(公告)号：US20090035927A1
公开(公告)日：2009-02-05
申请号：US11830143
申请日：2007-07-30
申请人： CHRISTOPHER S. OLSEN , TEJAL GOYANI , JOHANES SWENBERG
发明人： CHRISTOPHER S. OLSEN , TEJAL GOYANI , JOHANES SWENBERG
IPC分类号： H01L21/31 , C23C16/00 , H01L21/3205
CPC分类号： H01L21/3185 , C23C16/0272 , C23C16/345 , C23C16/56 , H01L21/3141 , H01L21/3144 , H01L29/66833 , H01L29/792
摘要： Methods of forming dielectric layers on a substrate comprising silicon and oxygen are disclosed herein. In some embodiments, a method of forming a dielectric layer on a substrate includes provide a substrate having an exposed silicon oxide layer; treating an upper surface of the silicon oxide layer with a plasma; and depositing a silicon nitride layer on the treated silicon oxide layer via atomic layer deposition. The silicon nitride layer may be exposed to a plasma nitridation process. The silicon oxide and silicon nitride layers may be subsequently thermally annealed. The dielectric layers may be used as part of a gate structure.
摘要翻译：本文公开了在包含硅和氧的基底上形成介电层的方法。在一些实施例中，在衬底上形成电介质层的方法包括提供具有暴露的氧化硅层的衬底; 用等离子体处理氧化硅层的上表面; 以及通过原子层沉积在经处理的氧化硅层上沉积氮化硅层。可以将氮化硅层暴露于等离子体氮化处理。氧化硅和氮化硅层可随后被热退火。电介质层可以用作栅极结构的一部分。

5. 发明申请

US20100055905A1 METHOD OF FORMING AN ALUMINUM OXIDE LAYER 失效
标题翻译：形成氧化铝层的方法
公开(公告)号：US20100055905A1
公开(公告)日：2010-03-04
申请号：US12203647
申请日：2008-09-03
申请人： SHREYAS S. KHER , CHRISTOPHER S. OLSEN , LUCIEN DATE
发明人： SHREYAS S. KHER , CHRISTOPHER S. OLSEN , LUCIEN DATE
IPC分类号： H01L21/44
CPC分类号： C23C16/403 , C23C16/0272 , H01L21/02178 , H01L21/02271 , H01L21/31616
摘要： Methods of forming aluminum oxide layers on substrates are disclosed. In some embodiments, the method includes depositing an aluminum oxide seed layer on the substrate using a first process having a first deposition rate. The method further includes depositing a bulk aluminum oxide layer atop the seed layer using a metalorganic chemical vapor deposition (MOCVD) process having a second deposition rate greater than the first deposition rate.
摘要翻译：公开了在基底上形成氧化铝层的方法。在一些实施例中，该方法包括使用具有第一沉积速率的第一工艺在衬底上沉积氧化铝种子层。该方法还包括使用具有大于第一沉积速率的第二沉积速率的金属有机化学气相沉积（MOCVD）工艺沉积种子层顶部的体积氧化铝层。

6. 发明申请

US20100075499A1 METHOD AND APPARATUS FOR METAL SILICIDE FORMATION 审中-公开
标题翻译：金属硅化物形成的方法和装置
公开(公告)号：US20100075499A1
公开(公告)日：2010-03-25
申请号：US12233858
申请日：2008-09-19
申请人： CHRISTOPHER S. OLSEN
发明人： CHRISTOPHER S. OLSEN
IPC分类号： H01L21/44
CPC分类号： H01L21/2855 , H01L21/28052 , H01L21/28556 , H01L29/4933 , H01L29/78
摘要： Embodiments described herein include methods of forming metal silicide layers using a diffusionless annealing process. In one embodiment a method for forming a metal silicide material on a substrate is provided. The method comprises depositing a metal material over a silicon containing surface of a substrate, depositing a metal nitride material over the metal material, depositing a metallic contact material over the metal nitride material, and exposing the substrate to a diffusionless annealing process to form a metal silicide material. The short time-frame of the diffusionless annealing process reduces the time for the diffusion of nitrogen to the silicon containing interface to form silicon nitride thus minimizing the interfacial resistance.
摘要翻译：本文描述的实施例包括使用无扩散退火工艺形成金属硅化物层的方法。在一个实施例中，提供了一种在衬底上形成金属硅化物材料的方法。该方法包括在衬底的含硅表面上沉积金属材料，在金属材料上沉积金属氮化物材料，在金属氮化物材料上沉积金属接触材料，并将衬底暴露于无扩散退火工艺以形成金属硅化物材料无扩散退火工艺的短时间框架减少了氮扩散到含硅界面的时间，以形成氮化硅，从而使界面电阻最小化。

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