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1. 发明申请

WO2007074961A1 HARDMASK COMPOSITIONS FOR RESIST UNDERLAYER FILMS 审中-公开
标题翻译： HARDMASK抗静电膜组合物
公开(公告)号：WO2007074961A1
公开(公告)日：2007-07-05
申请号：PCT/KR2006/003469
申请日：2006-09-01
申请人： CHEIL INDUSTRIES INC. , UH, Dong Seon , OH, Chang Il , KIM, Do Hyeon , YUN, Hui Chan , LEE, Jin Kuk , NAM, Irina , KIM, Jong Seob
发明人： UH, Dong Seon , OH, Chang Il , KIM, Do Hyeon , YUN, Hui Chan , LEE, Jin Kuk , NAM, Irina , KIM, Jong Seob
IPC分类号： G03F7/004 , G03F7/075
CPC分类号： H01L21/0273 , G03F7/11
摘要： Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2 in the presence of a catalyst, whereinisa monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent. Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.
摘要翻译：本文提供了用于抗蚀剂下层膜的硬掩模组合物，其中根据本发明的一些实施方案，硬掩模组合物包括通过式1的化合物与式2的化合物在催化剂存在下反应制备的聚合物，其中一价有机基团，n为3〜20的整数，m为1或2; 和有机溶剂。本文还提供了使用根据本发明实施例的硬掩模组合物制造半导体集成电路器件的方法。还提供了通过本发明的方法实施例制造的半导体集成电路器件。

2. 发明申请

WO2007032574A1 ANTIREFLECTIVE HARDMASK COMPOSITION AND METHODS FOR USING SAME 审中-公开
标题翻译：抗反射复合材料组合物及其使用方法
公开(公告)号：WO2007032574A1
公开(公告)日：2007-03-22
申请号：PCT/KR2005/004214
申请日：2005-12-09
申请人： CHEIL INDUSTRIES INC. , OH, Chang Il , UH, Dong Seon , KIM, Do Hyeon , LEE, Jin Kuk , NAM, Irina , YUN, Hui Chan , KIM, Jong Seob
发明人： OH, Chang Il , UH, Dong Seon , KIM, Do Hyeon , LEE, Jin Kuk , NAM, Irina , YUN, Hui Chan , KIM, Jong Seob
IPC分类号： G03F7/004
CPC分类号： G03F7/091
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) described in this specification; (b) a crosslinking component; and (c) an acid catalyst.
摘要翻译：提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。本发明的抗反射硬掩模组合物包括：（a）包含至少一种具有本说明书中描述的式（I）单体单元的聚合物的聚合物组分; （b）交联组分; 和（c）酸催化剂。

3. 发明申请

WO2007035018A1 ANTIREFLECTIVE HARDMASK COMPOSITION AND METHODS FOR USING SAME 审中-公开
标题翻译：抗反射复合材料组合物及其使用方法
公开(公告)号：WO2007035018A1
公开(公告)日：2007-03-29
申请号：PCT/KR2005/004216
申请日：2005-12-09
申请人： CHEIL INDUSTRIES INC. , OH, Chang Il , UH, Dong Seon , KIM, Do Hyeon , LEE, Jin Kuk , NAM, Irina , YUN, Hui Chan , KIM, Jong Seob
发明人： OH, Chang Il , UH, Dong Seon , KIM, Do Hyeon , LEE, Jin Kuk , NAM, Irina , YUN, Hui Chan , KIM, Jong Seob
IPC分类号： G03F7/004
CPC分类号： G03F7/091
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflectivehardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) described in this specification; (b) a crosslinking component; and (c) an acid catalyst.
摘要翻译：提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。本发明的抗反射掩模组合物包括：（a）包含至少一种具有本说明书中描述的式（I）单体单元的聚合物的聚合物组分; （b）交联组分; 和（c）酸催化剂。

4. 发明申请

WO2006121242A1 ANTIREFLECTIVE HARDMASK COMPOSITION AND METHODS FOR USING SAME 审中-公开
标题翻译：抗反射复合材料组合物及其使用方法
公开(公告)号：WO2006121242A1
公开(公告)日：2006-11-16
申请号：PCT/KR2006/000909
申请日：2006-03-14
申请人： CHEIL INDUSTRIES INC. , UH, Dong Seon , OH, Chang Il , KIM, Do Hyeon , LEE, Jin Kuk , NAM, Irina
发明人： UH, Dong Seon , OH, Chang Il , KIM, Do Hyeon , LEE, Jin Kuk , NAM, Irina
IPC分类号： G03F7/039 , G03F7/004
CPC分类号： G03F7/091
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. In some embodiments of the present invention, antireflective hardmask compositions include: a) a polymer component, which includes one or more of the monomeric units having strong absorbance in the short wavelength region of the electromagnetic spectrum; b) a crosslinking component; and c) an acid catalyst.
摘要翻译：提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。在本发明的一些实施方案中，抗反射硬掩模组合物包括：a）聚合物组分，其包括在电磁光谱的短波长区域中具有强吸光度的一种或多种单体单元; b）交联组分; 和c）酸催化剂。

5. 发明申请

WO2008063016A1 HARDMASK COMPOSITION FOR PROCESSING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PRODUCED BY THE PROCESS 审中-公开
标题翻译：用于加工电阻膜的HARDMASK组合物，使用HARDMASK组合物生产半导体集成电路器件的方法以及由该工艺生产的半导体集成电路器件
公开(公告)号：WO2008063016A1
公开(公告)日：2008-05-29
申请号：PCT/KR2007/005894
申请日：2007-11-21
申请人： CHEIL INDUSTRIES INC. , KIM, Mi Young , KIM, Sang Kyun , LIM, Sang Hak , KOH, Sang Ran , YUN, Hui Chan , KIM, Do Hyeon , UH, Dong Seon , KIM, Jong Seob
发明人： KIM, Mi Young , KIM, Sang Kyun , LIM, Sang Hak , KOH, Sang Ran , YUN, Hui Chan , KIM, Do Hyeon , UH, Dong Seon , KIM, Jong Seob
IPC分类号： G03F7/004
CPC分类号： C08G77/50 , C08L83/14 , G03F7/11 , G03F7/2022 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0271 , H01L21/31144 , H01L21/3122
摘要： A hardmask composition for processing a resist underlayer film is provided. The hardmask composition comprises an organosilane polymer and a solvent or a mixture of solvents wherein the organosilane polymer is prepared in the presence of an acid catalyst by polycondensation of hjdroly sates of compounds represented by Formulae 1, 2 and 3: ([R)1O]3S-X (1) wherein X is a C6-C30 functional group containing at least one substituted or unsubstituted aromatic ring and R1 is a C1-C6 alkyl group; [R2O]3S-R 3 (2) wherein R2 is a C1-C6 alkyl group and R3 is a C1-C12 alkyl group; and [R4O]3S-Y-S[OR 5]3 (3) wherein R4 and R5 are each independently a C1-C6 alkyl group, and Y is a linking group selected from the group consisting of aromatic rings, substituted or unsubstituted, linear or branched C1-C20 alkylene groups, C1-C20 alkylene groups containing an aromatic ring, a heterocyclic ring, an urea group or an isocyanurate group in the backbone and C2-C20 hydrocarbon groups containing at least one multiple bond. The hardmask composition exhibits excellent film characteristics and good storage stability and allows transferring a good pattern to a material layer due to its satisfactory hardmask characteristics. In addition, the hardmask composition has improved etch resistance against O 2 plasma gas upon subsequent etching for patterning. The hardmask composition can be used to form a highly hjdrophilic thin film, thus being effective in improving the interfacial compatibility of the thin film with an overlying antireflective coating. Further provided is a process for producing a semiconductor integrated circuit device using the hardmask composition.
摘要翻译：提供了用于加工抗蚀剂下层膜的硬掩模组合物。所述硬掩模组合物包含有机硅烷聚合物和溶剂或溶剂混合物，其中有机硅烷聚合物是在酸催化剂存在下通过由式1,2和3表示的化合物的共聚物缩聚制备的：（[R] 10] 3S-X（1）其中X是含有至少一个取代或未取代的芳环的C 6 -C 30官能团，R 1是C 1 -C 6烷基; [R2O] 3S-R 3（2）其中R2是C1-C6烷基，R3是C1-C12烷基; 和[R 40] 3S-YS [OR 5] 3（3）其中R 4和R 5各自独立地为C 1 -C 6烷基，Y为选自以下的连接基团：芳环，取代或未取代的直链或支链C1-C20亚烷基，含有芳香环，杂环，脲基或异氰脲酸酯基的C1-C20亚烷基和含有至少一个多重键的C 2 -C 20烃基。硬掩模组合物表现出优异的膜特性和良好的储存稳定性，并且由于其令人满意的硬掩模特性，可以将良好的图案转印到材料层。此外，随后的图案化蚀刻，硬掩模组合物具有改善的对O 2等离子体气体的耐蚀刻性。硬掩模组合物可以用于形成高亲水性薄膜，因此有效地改善薄膜与上覆抗反射涂层的界面相容性。还提供了使用硬掩模组合物制造半导体集成电路器件的方法。

6. 发明申请

WO2010071255A1 HARDMASK COMPOSITION WITH IMPROVED STORAGE STABILITY FOR FORMING RESIST UNDERLAYER FILM 审中-公开
标题翻译：具有改进的存储稳定性的HARDMASK组合物形成电阻膜
公开(公告)号：WO2010071255A1
公开(公告)日：2010-06-24
申请号：PCT/KR2008/007895
申请日：2008-12-31
申请人： CHEIL INDUSTRIES INC. , KOH, Sang Ran , KIM, Sang Kyun , LIM, Sang Hak , KIM, Mi Young , YUN, Hui Chan , KIM, Do Hyeon , UH, Dong Seon , KIM, Jong Seob
发明人： KOH, Sang Ran , KIM, Sang Kyun , LIM, Sang Hak , KIM, Mi Young , YUN, Hui Chan , KIM, Do Hyeon , UH, Dong Seon , KIM, Jong Seob
IPC分类号： G03F7/075
CPC分类号： G03F7/0752 , C08G77/18 , C08L83/04 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332
摘要： Disclosed is a hardmask composition for forming a resist underlayer film. The hardmask composition comprises (A) an organosilane polymer and (B) at least one stabilizer. The hardmask composition is very stable during storage and allows a good pattern to be transferred to a material layer due to its excellent hardmask properties.
摘要翻译：公开了用于形成抗蚀剂下层膜的硬掩模组合物。硬掩模组合物包含（A）有机硅烷聚合物和（B）至少一种稳定剂。硬掩模组合物在储存期间非常稳定，并且由于其优异的硬掩模性质而允许将良好的图案转移到材料层。

7. 发明申请

WO2006135136A1 ANTIREFLECTIVE HARDMASK COMPOSITION AND METHODS FOR USING SAME 审中-公开
标题翻译：抗反射复合材料组合物及其使用方法
公开(公告)号：WO2006135136A1
公开(公告)日：2006-12-21
申请号：PCT/KR2005/003945
申请日：2005-11-22
申请人： CHEIL INDUSTRIES INC. , UH, Dong Sun , JUNG, Ji Young , OH, Jae Min , OH, Chang Il , KIM, Do Hyeon
发明人： UH, Dong Sun , JUNG, Ji Young , OH, Jae Min , OH, Chang Il , KIM, Do Hyeon
IPC分类号： G03F7/11
CPC分类号： G03F7/091 , G03F7/0387 , Y10S430/115
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer mixture including a first polymer that includes one or more of the following monomeric units described in this specification and a second polymer including an aryl group; (b) a crosslinking component; and (c) an acid catalyst.
摘要翻译：提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。本发明的抗反射硬掩模组合物包括：（a）包含第一聚合物的聚合物混合物，其包含本说明书中描述的一种或多种下列单体单元和包含芳基的第二聚合物; （b）交联组分; 和（c）酸催化剂。

8. 发明授权

EP2095188B1 HARDMASK COMPOSITION FOR PROCESSING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PRODUCED BY THE PROCESS 有权
标题翻译：要处理的HART MASK抗蚀剂组合物下层膜，工艺用于生产集成的半导体组件中使用硬掩模及构成MADE半导体集成电路部件的制造方法
公开(公告)号：EP2095188B1
公开(公告)日：2017-02-22
申请号：EP07834200.3
申请日：2007-11-21
申请人： CHEIL INDUSTRIES INC.
发明人： KIM, Mi Young , KIM, Sang Kyun , LIM, Sang Hak , KOH, Sang Ran , YUN, Hui Chan , KIM, Do Hyeon , UH, Dong Seon , KIM, Jong Seob
IPC分类号： G03F7/004
CPC分类号： C08G77/50 , C08L83/14 , G03F7/11 , G03F7/2022 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0271 , H01L21/31144 , H01L21/3122

9. 发明公开

EP2095188A1 HARDMASK COMPOSITION FOR PROCESSING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PRODUCED BY THE PROCESS 有权
标题翻译：要处理的HART MASK抗蚀剂组合物下层膜，工艺用于生产集成的半导体组件中使用硬掩模及构成MADE半导体集成电路部件的制造方法
公开(公告)号：EP2095188A1
公开(公告)日：2009-09-02
申请号：EP07834200.3
申请日：2007-11-21
申请人： Cheil Industries Inc.
发明人： KIM, Mi Young , KIM, Sang Kyun , LIM, Sang Hak , KOH, Sang Ran , YUN, Hui Chan , KIM, Do Hyeon , UH, Dong Seon , KIM, Jong Seob
IPC分类号： G03F7/004
CPC分类号： C08G77/50 , C08L83/14 , G03F7/11 , G03F7/2022 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0271 , H01L21/31144 , H01L21/3122
摘要： A hardmask composition for processing a resist underlayer film is provided. The hardmask composition comprises an organosilane polymer and a solvent or a mixture of solvents wherein the organosilane polymer is prepared in the presence of an acid catalyst by polycondensation of hjdroly sates of compounds represented by Formulae 1, 2 and 3: ([R)1O]3S-X (1) wherein X is a C6-C30 functional group containing at least one substituted or unsubstituted aromatic ring and R1 is a C1-C6 alkyl group; [R2O]3S-R 3 (2) wherein R2 is a C1-C6 alkyl group and R3 is a C1-C12 alkyl group; and [R4O]3S-Y-S[OR 5]3 (3) wherein R4 and R5 are each independently a C1-C6 alkyl group, and Y is a linking group selected from the group consisting of aromatic rings, substituted or unsubstituted, linear or branched C1-C20 alkylene groups, C1-C20 alkylene groups containing an aromatic ring, a heterocyclic ring, an urea group or an isocyanurate group in the backbone and C2-C20 hydrocarbon groups containing at least one multiple bond. The hardmask composition exhibits excellent film characteristics and good storage stability and allows transferring a good pattern to a material layer due to its satisfactory hardmask characteristics. In addition, the hardmask composition has improved etch resistance against O 2 plasma gas upon subsequent etching for patterning. The hardmask composition can be used to form a highly hjdrophilic thin film, thus being effective in improving the interfacial compatibility of the thin film with an overlying antireflective coating. Further provided is a process for producing a semiconductor integrated circuit device using the hardmask composition.

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