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    • 8. 发明申请
    • FRONT ELECTRODE FOR USE IN PHOTOVOLTAIC DEVICE AND METHOD OF MAKING SAME
    • 用于光伏器件的前电极及其制造方法
    • WO2008063255A1
    • 2008-05-29
    • PCT/US2007/018361
    • 2007-08-20
    • GUARDIAN INDUSTRIES CORP.LU, YiweiDEN BOER, Willem
    • LU, YiweiDEN BOER, Willem
    • H01L31/0224H01L31/18
    • H01L31/022466H01L31/022483
    • This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include a plurality of metal(s) oxide layers and/or a plurality of conductive substantially metallic IR reflecting layers arranged in an alternating manner in order to provide for reduced visible light reflection, increased conductivity, and/or increased infrared (IR) reflection capability.
    • 本发明涉及用于诸如光伏器件的电子设备中的前电极/触点。 在某些示例性实施例中,光伏器件等的前电极包括多层涂层,其包括至少一种透明导电氧化物(TCO)层(例如,由氧化锡,氧化锌等材料构成或包括诸如氧化锡,氧化锌等) 和/或至少一个导电的基本上金属的IR反射层(例如,基于银,金等)。 在某些示例中,多层前电极涂层可以包括多个金属氧化物层和/或以交替方式布置的多个导电的基本金属的IR反射层,以便提供减少的可见光反射,增加的导电性 ,和/或增加的红外(IR)反射能力。
    • 9. 发明申请
    • METHOD OF MAKING OXIDE THIN FILM TRANSISTOR ARRAY, AND DEVICE INCORPORATING THE SAME
    • 制造氧化物薄膜晶体管阵列的方法和包括其的装置
    • WO2012044344A1
    • 2012-04-05
    • PCT/US2011/001583
    • 2011-09-14
    • GUARDIAN INDUSTRIES CORP.DEN BOER, Willem
    • DEN BOER, Willem
    • H01L21/336H01L29/786
    • H01L29/78603H01L29/66969H01L29/7869
    • Certain example embodiments relate to methods of making oxide thin film transistor arrays (e.g., IGZO, amorphous or polycrystalline ZnO, ZnSnO, InZnO, and/or the like), and devices incorporating the same. Blanket layers of an optional barrier layer, semiconductor, gate insulator, and/or gate metal are disposed on a substrate. These and/or other layers may be deposited on a soda lime or borosilicate substrate via low or room temperature sputtering. These layers may be later patterned and/or further processed in making a TFT array according to certain example embodiments. In certain example embodiments, all or substantially all TFT processing may take place at a low temperature, e.g., at or below 150 degrees C, until a post-annealing activation step, and the post-anneal step may take place at a relatively low temperature (e.g., 200-250 degrees C).
    • 某些示例性实施例涉及制造氧化物薄膜晶体管阵列(例如,IGZO,非晶或多晶ZnO,ZnSnO,InZnO等)的方法以及包含其的器件。 可选阻挡层,半导体,栅极绝缘体和/或栅极金属的毯层设置在基板上。 这些和/或其它层可以通过低或室温溅射沉积在钠钙或硼硅酸盐衬底上。 根据某些示例性实施例,这些层可以稍后被图案化和/或进一步处理以制造TFT阵列。 在某些示例性实施例中,所有或基本上所有TFT处理可以在低温(例如,150℃或低于150℃)下进行,直到后退火激活步骤,并且后退火步骤可以在较低温度下进行 (例如,200-250摄氏度)。