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1. 发明申请

WO2014154894A1 DENSE, HARD COATINGS ON SUBSTRATES USING HIPIMS 审中-公开
标题翻译： DENSE，使用HIPIMS的基材上的硬涂层
公开(公告)号：WO2014154894A1
公开(公告)日：2014-10-02
申请号：PCT/EP2014/056363
申请日：2014-03-28
申请人： CEMECON AG
发明人： GREENE, Joseph , PETROV, Ivan , GRECZYNSKI, Grzegorz , HULTMAN, Lars , KOELKER, Werner , BOLZ, Stephan
IPC分类号： H01J37/34 , C23C14/06 , C23C14/08 , C23C14/34 , C23C14/35
CPC分类号： H01J37/3429 , C23C14/0641 , C23C14/0676 , C23C14/08 , C23C14/345 , C23C14/3485 , C23C14/352 , H01J37/3444 , H01J37/3464 , H01J37/3467
摘要： A process and a device for coating a substrate (22) are described. In a vacuum chamber (10), a first magnetron cathode (24) is provided with a sputtering target (28) of a first material composition as predominant metal element a processing metal element chosen from Hf, Ta, Zr, W, Nb, Mo. A second magnetron cathode (26) is provided with a sputtering target (30) of a second material composition comprising predominantly carbon or one or more metals with a lower atomic mass than the processing metal element. In order to obtain coatings with improved properties, electrical power is supplied to the cathodes (24, 26) such that the targets (28, 30) are sputtered, where electrical power is supplied to the first cathode (24) as pulsed electrical power according to high power impulse magnetron sputtering with a first peak current density, and to the second cathode (26) as DC electrical power with a constant second current density or as time-variable electrical power with a second peak current density lower than the first peak current density. The substrate (22) is arranged within the vacuum chamber such that particles from the plasma deposit onto the substrate forming a coating. During the deposition process, a bias voltage VB is applied to the substrate comprising bias pulses which are synchronized with pulses applied to the first cathode, and are applied for a shorter duration TB than the pulses at the first cathode. Thus, a coated body may be formed with a substrate (22) and a coating layer (52) which comprises oxides, nitrides, or oxynitrides of carbon or metals selected from the groups 4-6 of the periodic table and at least one processing metal element selected out of Hf, Ta, W, Zr, Nb and Mo, present in an atomic concentration of 1 - 18 at.-%. The coating layer (52) comprises a process gas concentration of 0.3 at.-% or less.
摘要翻译：描述了用于涂覆基底（22）的方法和装置。在真空室（10）中，第一磁控阴极（24）设置有作为主要金属元素的第一材料组合物的溅射靶（28），选自Hf，Ta，Zr，W，Nb，Mo的加工金属元素第二磁控阴极（26）设置有主要包含比加工金属元素低的原子质量的碳或一种或多种金属的第二材料组合物的溅射靶（30）。为了获得具有改进性能的涂层，向阴极（24,26）供电，使得靶（28,30）被溅射，其中以第一阴极（24）供应电力作为脉冲电功率具有第一峰值电流密度的高功率脉冲磁控溅射和作为具有恒定的第二电流密度的DC电力的第二阴极（26），或者具有低于第一峰值电流的第二峰值电流密度的时变电力密度。衬底（22）布置在真空室内，使得来自等离子体的颗粒沉积到形成涂层的基底上。在沉积工艺期间，将偏置电压VB施加到包括与施加到第一阴极的脉冲同步的偏置脉冲的衬底，并施加比第一阴极的脉冲更短的持续时间TB。因此，涂覆体可以形成有基材（22）和包含选自元素周期表第4-6族中的碳或金属的氧化物，氮化物或氮氧化物的涂层（52），以及至少一种加工金属选自Hf，Ta，W，Zr，Nb和Mo的元素，原子浓度为1〜18原子％。涂层（52）包括0.3原子％以下的处理气体浓度。

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