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1. 发明专利

DE60222500T2 未知
公开(公告)号：DE60222500T2
公开(公告)日：2008-02-28
申请号：DE60222500
申请日：2002-06-25
申请人： CANON KK
发明人： MORIYA AKIRA , MIYACHI TAKESHI , HARA SHINICHI , TOKITA TOSHINOBU
IPC分类号： G03F7/20 , G05B19/418 , H01L21/027
摘要： For a mask structure which has a mask substrate on which a mask pattern is formed and a ring-shaped support frame (1) having a rectangular window (2), forces are applied to four pressurizing points (4 - 7) of the outer periphery of the support frame on the substantial extended lines of the two diagonal lines of the rectangular window (2). The forces are applied while adjusting the angle of the vector of each force with respect to each of the pressurizing points (4 - 7). For some of the pressurizing points, pressurizing points can be set for pressurizing in two directions perpendicular to each other. For some of the vectors of the forces, the force can be decomposed in X- and Y-axis directions parallel to sides of the rectangular window (2) and applied to the support frame (1).

2. 发明专利

DE68929187D1 未知
公开(公告)号：DE68929187D1
公开(公告)日：2000-04-27
申请号：DE68929187
申请日：1989-08-31
申请人： CANON KK
发明人： KUROSAWA HIROSHI , AMEMIYA MITSUAKI , TERASHIMA SHIGERU , UDA KOJI , SHIMODA ISAMU , UZAWA SHUNICHI , OZAWA KUNITAKA , HARA SHINICHI , KAWAKAMI EIGO , MIZUSAWA NOBUTOSHI , MORI MAKIKO , EBINUMA RYUICHI
IPC分类号： G03F7/20
摘要： An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.

3. 发明专利

DE68923576T2 未知
公开(公告)号：DE68923576T2
公开(公告)日：1996-01-25
申请号：DE68923576
申请日：1989-05-11
申请人： CANON KK
发明人： HARA SHINICHI , UZAWA SHUNICHI
IPC分类号： G12B5/00 , F16F15/02 , G03F7/20 , G05D19/02 , G12B9/08 , H01L21/00 , H01L21/027 , H01L21/30 , H01L21/687 , H01L41/04
摘要： A workpiece supporting mechanism suitably usable in an exposure apparatus, is disclosed. The mechanism includes a workpiece (1) supporting member (2) which is provided with a displacement sensor such as a speed sensor or an acceleration sensor (6). A vibrator (7) such as a piezoelectric device is added to the supporting member or a stage which supports the supporting member. Any vibration of the workpiece or the supporting member is detected by the displacement sensor (6) and, in accordance with the detection, the vibrator (7) is energized to cancel the vibration of the workpiece and the workpiece supporting member.

4. 发明专利

DE69837232D1 未知
公开(公告)号：DE69837232D1
公开(公告)日：2007-04-19
申请号：DE69837232
申请日：1998-05-06
申请人： CANON KK
发明人： HARA SHINICHI
IPC分类号： G03F7/20 , H01L21/027 , H01L21/68
摘要： An exposure method is disclosed which includes the steps of transferring, by exposure, a pattern formed on an original to different shot regions on a substrate sequentially, and performing, during exposure of a certain shot, at least one of (i) adjusting relative positional relation between the original and the substrate, with respect to a direction effective to correct translation of a transfer region of the substrate due to thermal distortion thereof, and (ii) adjusting a transfer magnification of the pattern of the original to the substrate so as to correct enlargement of the transfer region due to thermal distortion of the substrate, wherein, in one preferred form, the adjustment is made in accordance with a correction table related to thermal expansion of the substrate during exposure and being prepared on the basis of one of calculation and preparatory exposure experiment, wherein, in another preferred form, the transfer magnification is adjusted by deforming the original, and wherein, in a further preferred form, the transfer magnification is adjusted by adjusting a projection optical system for projecting the pattern of the original to the substrate.

5. 发明专利

DE69133413D1 未知
公开(公告)号：DE69133413D1
公开(公告)日：2004-10-21
申请号：DE69133413
申请日：1991-05-03
申请人： CANON KK
发明人： SAKAMOTO EIJI , EBINUMA RYUICHI , HARA SHINICHI , MARUMO MITSUJI
IPC分类号： C30B25/12 , C30B31/14 , H01L21/683 , H01L21/00 , C23C14/50

6. 发明专利

DE68929187T2 未知
公开(公告)号：DE68929187T2
公开(公告)日：2000-09-28
申请号：DE68929187
申请日：1989-08-31
申请人： CANON KK
发明人： KUROSAWA HIROSHI , AMEMIYA MITSUAKI , TERASHIMA SHIGERU , UDA KOJI , SHIMODA ISAMU , UZAWA SHUNICHI , OZAWA KUNITAKA , HARA SHINICHI , KAWAKAMI EIGO , MIZUSAWA NOBUTOSHI , MORI MAKIKO , EBINUMA RYUICHI
IPC分类号： G03F7/20
摘要： An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.

7. 发明专利

DE69031699D1 未知
公开(公告)号：DE69031699D1
公开(公告)日：1997-12-18
申请号：DE69031699
申请日：1990-07-11
申请人： CANON KK
发明人： AMEMIYA MITSUAKI , HARA SHINICHI , SAKAMOTO EIJI
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027 , H01L21/683 , H01L21/00 , H05K13/00
摘要： A substrate holding device includes a holding table having a reduced pressure passageway; a pressure gauge for measuring a value related to the pressure in the reduced pressure passageway; a pump for producing a pressure difference between a first surface of the substrate to be attracted to the holding table and a second surface of the substrate not to be attracted to the holding table; a valve which can be opened/closed for control of the pressure in the reduced pressure passageway; a pressure control system for controlling the opening/closing of the valve on the basis of an output corresponding to the value measured by the pressure gauge; and a temperature control system for controlling the temperature of the holding table.

8. 发明专利

DE68927430T2 未知
公开(公告)号：DE68927430T2
公开(公告)日：1997-03-13
申请号：DE68927430
申请日：1989-08-31
申请人： CANON KK
发明人： KUROSAWA HIROSHI , AMEMIYA MITSUAKI , TERASHIMA SHIGERU , UDA KOJI , SHIMODA ISAMU , UZAWA SHUNICHI , OZAWA KUNITAKA , MORI MAKIKO , EBINUMA RYUICHI , HARA SHINICHI , MIZUSAWA NOBUTOSHI , KAWAKAMI EIGO
IPC分类号： G03F7/20
摘要： An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.

9. 发明专利

DE68927364D1 未知
公开(公告)号：DE68927364D1
公开(公告)日：1996-11-28
申请号：DE68927364
申请日：1989-08-31
申请人： CANON KK
发明人： SAKAMOTO EIJI , HARA SHINICHI , SHIMODA ISAMU , UZAWA SHUNICHI
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30 , H01L21/683 , H01L21/00
摘要： A wafer chuck (2) usable with a semiconductor exposure apparatus (Fig.2A) wherein a mask and a semiconductor wafer (1) are placed in a vacuum ambience or a pressure-reduced gas ambience, and wherein the wafer (1) is exposed through the mask to radiation energy such as X-rays contained in a synchrotron radiation beam, by which the pattern of the mask is transferred onto the wafer (1). The wafer (1) is first attracted on the wafer supporting surface of the chuck (2) by vacuum attraction (21), and thereafter, the wafer (1) is attracted by electrostatic attraction force. Thereafter, the vacuum attraction is broken by supplying (24) a gas. Preferably Helium or other thermally conductive gas is admitted at this point. When the pattern of the mask is transferred onto the wafer (1), the wafer (1) is retained on the wafer supporting surface (20) by the electrostatic attraction force only. By this, the wafer supporting apparatus can correctly contact the wafer supporting surface (20) to the wafer (1) without being influenced by the undulation of the wafer (1). In addition, the heat produced in the wafer (1) during exposure can be removed efficiently by temperature controlled (23) water (11) supplied to the wafer supporting apparatus (2).

10. 发明专利

DE69118315T2 未知
公开(公告)号：DE69118315T2
公开(公告)日：1996-08-14
申请号：DE69118315
申请日：1991-11-01
申请人： CANON KK
发明人： HARA SHINICHI , SAKAMOTO EIJI , EBINUMA RYUICHI
IPC分类号： G03F7/20 , H01L21/00 , H01L21/687

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